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    • 21. 发明授权
    • High resolution continuously distributed silicon photodiode substrate
    • 高分辨率连续分布硅光电二极管基板
    • US4198647A
    • 1980-04-15
    • US4107
    • 1979-01-17
    • Jan GrinbergAlexander D. JacobsonWilliam P. Bleha, Jr.Paul O. Braatz
    • Jan GrinbergAlexander D. JacobsonWilliam P. Bleha, Jr.Paul O. Braatz
    • G02F1/135H01L27/14
    • G02F1/1354
    • This invention is directed to a semiconductor structure that includes at least one wafer that is fully depleted of all mobile carriers and is used as a medium for the movement of spatially modulated signal represented by charge carriers through the wafer with a spatial resolution that is smaller than the thickness of the wafer. This may be used in the form of a continuous high resolution silicon photodiode substrate to serve as an image input means for an electro-optical display medium, such as a liquid crystal. Next to the photoactivated substrate is a liquid crystal and next to the crystal is a transparent electrode. The photodiode is reverse biased and both of its sides are depleted of all mobile charges throughout its entire thickness. Thus, charges generated in the substrate move to the display not by diffusion as in prior art devices (e.g. the solid state silicon vidicon) but by the influence of the electric field which tends to minimize their lateral spread and thereby achieves a high spatial resolution in spite of the continuous character of this silicon diode device.
    • 本发明涉及一种半导体结构,该半导体结构包括至少一个完全耗尽所有移动载波的晶片,并且用作用于通过晶片以空间分辨率移动由电荷载体表示的空间调制信号的介质,其空间分辨率小于 晶片的厚度。 这可以以连续的高分辨率硅光电二极管基板的形式使用,以用作诸如液晶的电光显示介质的图像输入装置。 在光活化基板的旁边是液晶,并且在晶体旁边是透明电极。 光电二极管是反向偏置的,并且其两侧在整个厚度上都耗尽所有移动电荷。 因此,在现有技术的装置(例如,固态硅摄像机)中,在衬底中产生的电荷不会像扩散一样移动到显示器上,而是通过电场的影响,使得它们的横向扩展趋于最小化,从而实现高空间分辨率 尽管这种硅二极管器件具有连续的特性。
    • 23. 发明授权
    • High brightness full color image light valve projection system
    • US4127322A
    • 1978-11-28
    • US637906
    • 1975-12-05
    • Alexander D. JacobsonJan GrinbergDonald E. SprotberyDonald D. Boswell
    • Alexander D. JacobsonJan GrinbergDonald E. SprotberyDonald D. Boswell
    • H04N9/31H01J29/89G02F1/01G03B21/00
    • H04N9/3105
    • There is disclosed an electro-optical system for real time projection of very high brightness, full color pictorial images from television or other program sources onto a large display screen from a set of three reflection type AC driven field effect mode birefringent liquid crystal light valves each of which modulates a primary color component video image onto a collimated beam of polarized light of a given primary color by modulating the polarization state thereof. In order to achieve very high brightness without overheating the system it is necessary that none of the optical elements forming the projection beam optical system absorb light in carrying out their function. Hence all projection beam optical processes are non-absorptive to first order. The light valves are devices that receive and reflect projection light from an independent high power light source while modulating onto the reflected light video images derived from a low level light source such as a cathode ray tube. The modulation onto the projection beam is achieved by modulating the state of polarization thereof. One such device is used for the red portion of the video image, a second for the green portion and a third for the blue portion. The optical system derives light from a white projection light source, polarizes it, splits it into the three primary colors, directs the three colored beams to the three light valves respectively for image modulation, collects the light that has been modulated by the light valves, recombines the three beams, and projects them onto the screen with sufficient registration to create full color range for the full color image. The optical system uses only a single projection lens and a single polarizing/analyzing beam splitter/recombiner and suitable dichroic mirrors. There is thus provided a simple, compact low weight, high brightness and high efficiency full color light valve image projection system for the projection of high brightness, full color, real time dynamic or static imagery which may include provision for overlay legends or other information as well as possible steroscopic or three dimensional perception by the viewer.
    • 24. 发明授权
    • Circularly polarized light source
    • 圆偏振光源
    • US4073571A
    • 1978-02-14
    • US683557
    • 1976-05-05
    • Jan GrinbergLeroy J. Miller
    • Jan GrinbergLeroy J. Miller
    • G02B5/30G02F1/13
    • G02B5/3016
    • There is disclosed a circularly polarized light source including a circular light polarizer using cholesteric liquid crystal material in an arrangement such that substantially 100% of the unpolarized light input may be utilized in a circularly polarized output in either a narrow band or wide band configuration. The circular polarizer itself comprises one or a plurality of liquid crystal cells having liquid crystal material of a predetermined ratio by weight of cholesteric to nematic liquid crystal type in each cell. The ratio of the types of materials determines a central wavelength to which each cell is tuned in its polarizing action. If a single cell is used, light of a predetermined bandwidth around its central wavelength is polarized. If a plurality of cells are stacked in a sandwich arrangement wherein each cell is tuned to a different wavelength selected in such a sequentially stepped fashion that the bandwidths for the cells form a continuous spectrum, then there is formed a wideband polarizer which can readily encompass the entire visible wavelength region of the spectrum.
    • 公开了一种圆偏振光源,其包括使用胆甾醇型液晶材料的圆形光偏振器,其布置使得基本上100%的非偏振光输入可以以窄带或宽带配置中的圆偏振输出来使用。 圆偏振器本身包括在每个单元中具有预定的胆甾型向向列型液晶型重量比的液晶材料的一个或多个液晶单元。 材料类型的比例决定了每个单元在其偏振动作中调谐到的中心波长。 如果使用单个单元,则围绕其中心波长的预定带宽的光被极化。 如果将多个单元堆叠成三明治布置,其中每个单元被调谐到以这样的顺序阶梯式选择的不同波长,使得单元的带宽形成连续的频谱,则形成宽带偏振器,其可以容易地包含 光谱的整个可见光波长区域。
    • 26. 发明授权
    • Method of forming an integrated circuit structure with multiple common
planes
    • 形成具有多个公共平面的集成电路结构的方法
    • US5045501A
    • 1991-09-03
    • US338480
    • 1988-08-15
    • Jan Grinberg
    • Jan Grinberg
    • H01L21/762H01L23/528H01L27/02H01L27/06
    • H01L21/76248H01L23/5286H01L27/0214H01L27/0688H01L2924/0002Y10S148/091Y10S148/092Y10S148/093
    • An integrated circuit structure and method of forming the same is described in which a plurality of common signal planes are provided for an integrated circuit formed on a layer of semiconductive material (30). The common planes consist of a single crystal semiconductive substrate (2) and at least one conductive layer (26, 66) between the substrate (2) and the semiconductive circuit layer (30), with insulative layers (24, 28, 68) separating the conductive layers (26, 66) from each other and from the substrate (2) and semiconductive layer (30). When one conductive layer (26) is used, a power supply signal (V+) is preferably applied to the substrate (2) and a ground reference to the conductive layer (26). Contacts are made between the integrated circuit and the desired common planes by metallized contacts (56, 60) formed in openings (54, 58) through the underlying material. Various circuit signals can also be introduced through additional conductive layers. In either case, only the top layer of semiconductive material (30) needs to be recrystallized from the substrate (2) into single crystal form, even if the conductive layers (26, 66) are provided as heavily doped semiconductive materials. The novel structure greatly reduces the surface area devoted to metallization, and practically eliminates cross-talk between components. It also enables a reduction of metallization levels from two to one, significantly increasing circuit yield.
    • 描述了一种集成电路结构及其形成方法,其中为形成在半导体材料层(30)上的集成电路提供了多个公共信号面。 公共平面由衬底(2)和半导体电路层(30)之间的单晶半导体衬底(2)和至少一个导电层(26,66)组成,绝缘层(24,28,68)分离 所述导电层(26,66)彼此之间以及从所述基板(2)和所述半导体层(30)开始。 当使用一个导电层(26)时,优选地将电源信号(V +)施加到基板(2),并将导电参考电压施加到导电层(26)。 通过穿过下面的材料形成在开口(54,58)中的金属化接触(56,60),在集成电路和期望的公共平面之间形成触点。 各种电路信号也可以通过附加的导电层引入。 在任一种情况下,即使将导电层(26,66)设置为重掺杂的半导体材料,只有半导体材料(30)的顶层需要从衬底(2)再结晶成单晶形式。 新颖的结构大大降低了金属化的表面积,实际上消除了组件之间的串扰。 它还可以将金属化水平从2降低到1,显着提高电路产量。
    • 27. 发明授权
    • Radiation detector array using radiation sensitive bridges
    • 辐射检测器阵列使用辐射敏感桥
    • US5010251A
    • 1991-04-23
    • US463563
    • 1990-01-11
    • Jan GrinbergMurray S. WelkowskyChiung-Sheng WuPaul O. Braatz
    • Jan GrinbergMurray S. WelkowskyChiung-Sheng WuPaul O. Braatz
    • G01J5/10G01J5/20G01J5/22G01J5/52
    • G01J5/10G01J5/20G01J5/22G01J5/522
    • An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
    • 公开了一种红外(IR)模拟器,其中像素阵列通过电阻器桥限定在绝缘衬底上,电阻器桥在间隔开的位置处接触衬底,并且在接触位置之间与衬底分离,从而与衬底隔离。 衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥,从而从每个像素建立适当的红外辐射。 驱动电路以及至少一些电引线优选位于电阻桥下。 每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。 驱动电路采用产生基本上无闪烁操作的采样和保持电路,其中电阻器桥与它们各自的驱动电路阻抗匹配。 可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥,并用热发射材料覆盖电阻层。 阵列优选形成在蓝宝石(SOS)硅晶片上。 也可以形成电磁辐射桥接检测器阵列,其中桥具有电阻器,热电偶或肖特基结结构。
    • 28. 发明授权
    • Integrated circuit structure with multiple common planes and method of
forming the same
    • 具有多个共面的集成电路结构及其形成方法
    • US4974041A
    • 1990-11-27
    • US232621
    • 1988-08-15
    • Jan Grinberg
    • Jan Grinberg
    • H01L21/762H01L23/528H01L27/02H01L27/06
    • H01L27/0214H01L21/76248H01L23/5286H01L27/0688H01L2924/0002
    • An integrated circuit structure and method of forming the same is described in which a plurality of common signal planes are provided for an integrated circuit formed on a layer of semiconductive material (30). The common planes consist of a single crystal semiconductive substrate (2) and at least one conductive layer (26, 66) between the substrate (2) and the semiconductive circuit layer (30), with insulative layers (24, 28, 68) separating the conductive layers (26, 66) from each other and from the substrate (2) and semiconductive layer (30). When one conductive layer (26) is used, a power supply signal (V+) is preferably applied to the substrate (2) and a ground reference to the conductive layer (26). Contacts are made between the integrated circuit and the desired common planes by metallized contacts (56, 60) formed in openings (54, 58) through the underlying material. Various circuit signals can also be introduced through additional conductive layers. In either case, only the top layer of semiconductive material (30) needs to be recrystallized from the substrate (2) into single crystal form, even if the conductive layers (26, 66) are provided as heavily doped semiconductive materials. The novel structure greatly reduces the surface area devoted to metallization, and practically eliminates cross-talk between components. It also enables a reduction of metallization levels from two to one, significantly increasing circuit yield.
    • 描述了一种集成电路结构及其形成方法,其中为形成在半导体材料层(30)上的集成电路提供了多个公共信号面。 公共平面由衬底(2)和半导体电路层(30)之间的单晶半导体衬底(2)和至少一个导电层(26,66)组成,绝缘层(24,28,68)分离 所述导电层(26,66)彼此之间以及从所述基板(2)和所述半导体层(30)开始。 当使用一个导电层(26)时,优选地将电源信号(V +)施加到基板(2),并将导电参考电压施加到导电层(26)。 通过穿过下面的材料形成在开口(54,58)中的金属化接触(56,60),在集成电路和期望的公共平面之间形成触点。 各种电路信号也可以通过附加的导电层引入。 在任一种情况下,即使将导电层(26,66)设置为重掺杂的半导体材料,只有半导体材料(30)的顶层需要从衬底(2)再结晶成单晶形式。 新颖的结构大大降低了金属化的表面积,实际上消除了组件之间的串扰。 它还可以将金属化水平从2降低到1,显着提高电路产量。
    • 29. 发明授权
    • Modular input-programmable logic circuits for use in a modular array
processor
    • 用于模块化阵列处理器的模块化输入可编程逻辑电路
    • US4524428A
    • 1985-06-18
    • US342639
    • 1982-01-26
    • Jan GrinbergSiegfried Hansen
    • Jan GrinbergSiegfried Hansen
    • G06F7/575G06F15/80G06F7/48
    • G06F7/575G06F15/8023
    • A general circuit design for the various functional types of modules used in the Elemental Processors of a Modular Array Processor. These modules nominally include an input-programmable logic circuit and closely associated memory register. They also include a common means of transferring data to and from a data bus for communicating data to the other modules present within their respective Elemental Processors. The various functional types of modules are realized through the use of logic circuits of different specific designs. Each particular type of logic circuit is designed to implement all of the related logical and data manipulative operations necessary to provide a general data processing function, such as those of accumulator, memory, counter, and comparator. This allows the logic circuit to receive data from the data bus, perform a selected data manipulation operation consistent with the module's functional type on the data received in combination with data stored in the memory register and to store the resultant data in the memory register, and to transmit the stored resultant data back to the data bus.
    • 用于模块化阵列处理器的元件处理器中使用的各种功能类型的模块的通用电路设计。 这些模块名义上包括输入可编程逻辑电路和密切相关的存储器寄存器。 它们还包括将数据传输到数据总线和从数据总线传送数据到其各自元件处理器中存在的其他模块的常用方法。 模块的各种功能类型通过使用不同特定设计的逻辑电路来实现。 每个特定类型的逻辑电路被设计成实现提供诸如累加器,存储器,计数器和比较器的一般数据处理功能所必需的所有相关逻辑和数据操作操作。 这允许逻辑电路从数据总线接收数据,对存储在存储器寄存器中的数据结合数据接收的数据执行与模块的功能类型一致的选择的数据操作操作,并将结果数据存储在存储器寄存器中,以及 将所存储的结果数据发送回数据总线。