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    • 23. 发明申请
    • Method of making rolling electrical contact to wafer front surface
    • 制造与晶片正面滚动电接触的方法
    • US20050269212A1
    • 2005-12-08
    • US11123268
    • 2005-05-05
    • Homayoun TaliehCyprian UzohBulent Basol
    • Homayoun TaliehCyprian UzohBulent Basol
    • C25D5/06B23H3/00B23H3/04B23H5/08C25D7/12C25D17/00C25D21/00C25F7/00H01L21/288
    • B23H3/04B23H5/08C25D5/08C25D17/00C25D17/001C25D17/005C25F7/00H01L21/2885
    • Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
    • 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。
    • 25. 发明申请
    • Method and apparatus for processing a substrate with minimal edge exclusion
    • 用于处理具有最小边缘排除的基板的方法和装置
    • US20060006060A1
    • 2006-01-12
    • US11225913
    • 2005-09-13
    • Bulent BasolCyprian UzohHomayoun Talieh
    • Bulent BasolCyprian UzohHomayoun Talieh
    • C25D17/00
    • C25D5/02C25D7/123C25D17/001H01L21/2885H01L21/3212H01L21/76877
    • An apparatus for processing a material on a surface of a wafer having a diameter includes a cavity defined by a peripheral wall terminating at a peripheral edge and having at least one lateral dimension smaller than the wafer diameter and at least one lateral dimension larger than the wafer diameter and configured to hold a process solution proximate to the peripheral edge such that the process solution will always contact a first wafer surface region, a head configured to hold the wafer above the cavity peripheral edge so that the surface of the wafer faces the cavity, and an electrical contact member positioned outside the cavity peripheral wall and configured to contact a second wafer surface region where the lateral dimension of the cavity is smaller than the wafer diameter and to maintain electrical contact with the wafer when the wafer is moved relative to the contact member. Advantages of the invention include substantially full surface treatment of the wafer.
    • 一种用于处理具有直径的晶片表面上的材料的设备包括由外围壁限定的空腔,该外围壁终止于外围边缘并具有至少一个小于晶片直径的横向尺寸和至少一个大于晶片的横向尺寸 并且被配置为将处理溶液保持靠近外围边缘,使得处理溶液将始终接触第一晶片表面区域,头部被配置为将晶片保持在空腔周边边缘上方,使得晶片的表面面向空腔, 以及电接触构件,其定位在所述腔周壁外部并且被配置为接触所述腔的横向尺寸小于所述晶片直径的第二晶片表面区域,并且当所述晶片相对于所述触点移动时与所述晶片保持电接触 会员。 本发明的优点包括晶片的基本全表面处理。
    • 28. 发明授权
    • Method and apparatus employing pad designs and structures with improved fluid distribution
    • 使用具有改进的流体分布的垫设计和结构的方法和装置
    • US06413403B1
    • 2002-07-02
    • US09621969
    • 2000-07-21
    • Paul LindquistBulent BasolCyprian UzohHomayoun Talieh
    • Paul LindquistBulent BasolCyprian UzohHomayoun Talieh
    • C25D500
    • B24B37/26B23H5/08C25D17/001C25D17/14
    • An apparatus capable of assisting in controlling an electrolyte flow and distribution of an electric field, a magnetic field, or an electromagnetic field in order to process a substrate is provided with improved fluid distribution. A support member having a top surface and a bottom surface contains at least one support member electrolyte channel. Each support member electrolyte channel forms a passage between the top surface and the bottom surface and allows the electrolyte to flow therethrough. A pad is attachable to the support member and contains at least one set of pad electrolyte channels also allowing for electrolyte flow therethrough to the substrate. Each support member electrolyte channel is connected to one set of pad electrolyte channels by fluid distribution structure. A method of assisting in control of the electrolyte flow and distribution of the electric field, the magnetic field, or the electromagnetic field, utilizing the apparatus, is also provided.
    • 能够有助于控制电解质流动和电场分布,磁场或电磁场以便处理衬底的装置提供改进的流体分布。 具有顶表面和底表面的支撑构件包含至少一个支撑构件电解质通道。 每个支撑构件电解质通道在顶表面和底表面之间形成通道,并允许电解质流过其中。 衬垫可附接到支撑构件并且包含至少一组衬垫电解质通道,还允许电解质流过衬底。 每个支撑构件电解质通道通过流体分配结构连接到一组垫片电解质通道。 还提供了一种利用该装置协助控制电解质流动和分布电场,磁场或电磁场的方法。
    • 29. 发明授权
    • Providing electrical contact to the surface of a semiconductor workpiece during processing
    • 在加工期间向半导体工件的表面提供电接触
    • US07309413B2
    • 2007-12-18
    • US10459321
    • 2003-06-10
    • Homayoun TaliehCyprian UzohBulent M. Basol
    • Homayoun TaliehCyprian UzohBulent M. Basol
    • C25D5/04C25D7/12C25F3/12
    • B23H3/04B23H5/08C25D5/08C25D17/00C25D17/001C25D17/005C25F7/00H01L21/2885
    • Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
    • 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。
    • 30. 发明申请
    • Method and apparatus for plating and polishing semiconductor substrate
    • 电镀和抛光半导体衬底的方法和装置
    • US20050034976A1
    • 2005-02-17
    • US10946703
    • 2004-09-21
    • Homayoun TaliehCyprian Uzoh
    • Homayoun TaliehCyprian Uzoh
    • B24B37/16C25D5/06C25D5/22C25D7/12C25D17/00C25D17/12C25D17/14C25F7/00H01L21/288H01L21/304H01L21/3205H01L21/321C25D5/48
    • B24B37/16C25D5/06C25D5/22C25D7/123C25D17/001C25D17/14C25F7/00H01L21/3212
    • The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
    • 本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。 这通过在单个设备中提供多个室来实现,其中一个室可以用于电镀/沉积导电材料,并且另一个室可以用于抛光半导体衬底。 电镀/沉积工艺可以使用刷镀或电化学机械沉积进行,并且可以使用电抛光或化学机械抛光进行抛光工艺。 本发明还提供一种用于将导电材料间歇地施加到半导体衬底的方法和装置,并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。 此外,本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。