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21. 发明授权

US5572072A Semiconductor device having a multi-layer metallization structure 失效
公开(公告)号：US5572072A
公开(公告)日：1996-11-05
申请号：US341982
申请日：1994-11-16
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L21/285 , H01L21/441 , H01L21/48 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L29/43 , H01L29/41
CPC分类号： H01L21/76838 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

22. 发明授权

US5266521A Method for forming a planarized composite metal layer in a semiconductor device 失效
标题翻译：在半导体器件中形成平面化复合金属层的方法
公开(公告)号：US5266521A
公开(公告)日：1993-11-30
申请号：US828458
申请日：1992-01-31
申请人： Sang-in Lee , Chang-soo Park , Jeong-ha Son
发明人： Sang-in Lee , Chang-soo Park , Jeong-ha Son
IPC分类号： H01L21/20 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76882 , H01L21/32115 , H01L21/7684 , H01L23/53214 , H01L21/76804 , H01L2924/0002 , Y10S438/913
摘要： A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first metal layer on the semiconductor intermediate product, heat-treating the first metal layer to fill up the opening with the metal, forming a second metal layer on the first metal layer, and then heat-treating the second layer to planarize the metal layer. An alternative embodiment of the invention encompasses a method for manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer with an opening formed thereon, forming a metal layer on the semiconductor wafer, and then heat-treating the metal layer to fill up the opening with the metal, wherein pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘中间层以提供半导体中间产物，为绝缘中间层提供开口，在半导体中间产物上形成第一金属层，热处理第一金属层用金属填充开口，在第一金属层上形成第二金属层，然后热处理第二层以使金属层平坦化。本发明的替代实施例包括一种用于制造半导体器件的方法，包括以下步骤：提供半导体晶片，其上形成有开口，在半导体晶片上形成金属层，然后热处理金属层以填充与金属一起开口，其中在形成金属层时使用纯Al或不含Si成分的铝合金作为金属。

23. 发明授权

US07430751B2 Data recording/reproducing apparatus with an improved structure for securely supporting a front panel 有权
标题翻译：具有改进结构的数据记录/再现装置，用于牢固地支撑前面板
公开(公告)号：US07430751B2
公开(公告)日：2008-09-30
申请号：US11185876
申请日：2005-07-21
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： G11B33/12
CPC分类号： G06F1/184 , G06F1/187 , G11B25/10 , G11B33/022 , G11B33/027
摘要： A data recording/reproducing apparatus that includes an open front housing having a base frame and a cover frame, a recording/reproducing unit installed in the housing to record and/or reproduce data from a predetermined recording medium, a circuit board installed parallel to the recording/reproducing unit in the housing, a front unit connected to the open front of the housing to support operation buttons, a first locking unit which locks the front unit and the recording/reproducing unit, and a second locking unit which locks the front unit and the housing at a position corresponding to the circuit board.
摘要翻译：一种数据记录/再现装置，包括具有基架和盖框架的开放前壳体，安装在壳体中以从预定记录介质记录和/或再现数据的记录/再现单元，与记录/再现单元，连接到壳体的开口前部以支撑操作按钮的前单元，锁定前单元和记录/再现单元的第一锁定单元，以及锁定前单元的第二锁定单元并且在与电路板相对应的位置处的壳体。

24. 发明申请

US20060016671A1 Switching device of an image recording and replaying apparatus 失效
标题翻译：图像记录和重放装置的切换装置
公开(公告)号：US20060016671A1
公开(公告)日：2006-01-26
申请号：US10983590
申请日：2004-11-09
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01H13/70
CPC分类号： H01H25/041
摘要： A switching device of an image recording and replaying apparatus, having: a frame with a button sheet having a guide boss opening positioned in a center of the button sheet and operation boss openings positioned around the guide boss opening, pairs of the operation boss openings being oppositely disposed with respect to the guide boss opening; a switchboard placed on a first side of the frame and having tact switches facing respective operation boss openings; an integrated button disposed to be elastically biased toward a second side of the frame opposite the first side, and having a guide boss inserted into the guide boss opening and operation bosses inserted into respective operation boss openings; and a fixation holder disposed on the guide boss to fix the integrated button to the frame, such that the operation bosses continuously contact with corresponding tact switches.
摘要翻译：一种图像记录和重放装置的切换装置，具有：具有按钮片的框架，其具有位于按钮片的中心的引导凸起开口和位于引导凸起开口周围的操作凸起开口，成对的操作凸起开口为相对于导向凸起开口相对设置; 布置在所述框架的第一侧上并且具有面向相应的操作凸起开口的触觉开关的开关板; 集成按钮，被设置为朝向与第一侧相对的框架的第二侧弹性偏置，并且具有插入到引导凸台开口中的引导凸起和插入到相应的操作凸起开口中的操作凸起; 以及设置在所述引导凸台上以将所述集成按钮固定到所述框架的固定架，使得所述操作凸台与相应的轻触开关持续接触。

25. 发明授权

US06013576A Methods for forming an amorphous tantalum nitride film 失效
标题翻译：形成无定形氮化钽膜的方法
公开(公告)号：US06013576A
公开(公告)日：2000-01-11
申请号：US902880
申请日：1997-07-30
申请人： Jae-eung Oh , Sang-in Lee , Chang-soo Park
发明人： Jae-eung Oh , Sang-in Lee , Chang-soo Park
IPC分类号： C23C16/02 , C23C16/34 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L21/205
CPC分类号： H01L21/76864 , C23C16/0227 , C23C16/34 , H01L21/76841
摘要： A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.
摘要翻译：通过将衬底暴露于包含含氮有机金属气体和氢等离子体的混合物在衬底上形成金属氮化物层，以在衬底上形成金属氮化物层。含氮有机金属气体可以包含五聚二甲基氨基钽（Ta（N（CH 3）2）5，并且金属氮化物层可以通过曝光形成包括将基底暴露于包括五聚二甲基氨基钽气体 Ta（N（CH 3）2）5和氢等离子体，温度高于300℃，更优选在300℃至750℃的温度下，压力为0.5托至1.5托。五元二甲基氨基钽气体（Ta（N（CH 3）2）5优选设置在其中以50sccm至150sccm的质量流速放置基板的室中，并且氢气等离子体可以在质量流量为30sccm至100sccm，氢气等离子体可以在包含氢气和惰性气体如氩气的气氛中在室外产生，氮化钽（具有小于1×10 4μM欧姆/ cm的电阻率的Ta 3 N 5层可以从而形成。

26. 发明授权

US5892254A Integrated circuit capacitors including barrier layers having grain boundary filling material 失效
标题翻译：集成电路电容器，包括具有晶界填充材料的阻挡层
公开(公告)号：US5892254A
公开(公告)日：1999-04-06
申请号：US940258
申请日：1997-09-30
申请人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
发明人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
IPC分类号： H01L27/04 , H01L21/02 , H01L21/285 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/92 , H01L29/76 , H01L23/48 , H01L23/52 , H01L29/94
CPC分类号： H01L21/7687 , H01L21/76841 , H01L21/76849 , H01L21/76855 , H01L28/60 , H01L28/75 , H01L21/28568 , H01L28/55
摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
摘要翻译：在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。阻挡层包括难熔金属和晶界填充材料。晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。

27. 发明授权

US5846859A Method for manufacturing a semiconductor memory device having capacitive storage 失效
标题翻译：一种具有电容存储器的半导体存储器件的制造方法
公开(公告)号：US5846859A
公开(公告)日：1998-12-08
申请号：US606193
申请日：1996-02-23
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L21/285 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L28/55 , H01L28/60 , H01L21/28568 , Y10S148/148
摘要： A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.
摘要翻译：提供了具有由高介电材料形成的电介质膜的半导体器件中的电容器及其制造方法。电容器由包括电介质膜和非晶SiC层的电极组成。因此，可以防止氧原子通过晶界扩散到底层中，并且可以防止在SiC层的表面上形成氧化物层，从而提供高可靠性的电容器电极和等于不比厚度大的氧化物厚度需要。

28. 发明授权

US5589713A Semiconductor device having an improved wiring layer 失效
标题翻译：具有改进的布线层的半导体器件
公开(公告)号：US5589713A
公开(公告)日：1996-12-31
申请号：US456732
申请日：1995-06-01
申请人： Sang-in Lee , Chang-soo Park
发明人： Sang-in Lee , Chang-soo Park
IPC分类号： H01L21/28 , H01L21/283 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/522 , H01L23/532 , H01L29/54
CPC分类号： H01L21/76865 , H01L21/3105 , H01L21/76843 , H01L21/76844 , H01L21/76858 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L2924/0002
摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.
摘要翻译：公开了具有新型接触结构的半导体器件的布线层。半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一形成在绝缘层上的完全填充开口的导电层。由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。因此，可以确保用溅射的Al完全填充开口。尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

29. 发明授权

US5569961A Semiconductor device having a multi-layer metallization structure 失效
标题翻译：具有多层金属化结构的半导体器件
公开(公告)号：US5569961A
公开(公告)日：1996-10-29
申请号：US473050
申请日：1995-06-07
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L21/285 , H01L21/441 , H01L21/48 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L29/41 , H01L29/43
CPC分类号： H01L21/76838 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.
摘要翻译：本发明涉及一种用于半导体器件的布线结构及其制造方法，其填充低于一半微米的接触孔。在半导体衬底上形成绝缘层，并在绝缘层中形成接触孔。在绝缘层上，通过CVD法沉积第一金属，以形成填充接触孔的CVD金属层或CVD金属塞。然后，将如此获得的CVD金属层或CVD金属加热件在低于第一金属熔点的高温下在真空中进行热处理，由此使CVD金属层的表面平坦化。通过溅射法在CVD金属层或CVD金属插塞上沉积第二种金属，从而形成溅射金属层。通过CVD法将接触孔填充第一金属，然后通过溅射法沉积可靠的溅射金属层。布线层可用于下一代的半导体器件。

30. 发明授权

US5534463A Method for forming a wiring layer 失效
标题翻译：形成布线层的方法
公开(公告)号：US5534463A
公开(公告)日：1996-07-09
申请号：US8775
申请日：1993-01-25
申请人： Sang-in Lee , Chang-soo Park
发明人： Sang-in Lee , Chang-soo Park
IPC分类号： H01L21/28 , H01L21/283 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76865 , H01L21/3105 , H01L21/76843 , H01L21/76844 , H01L21/76858 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L2924/0002
摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.
摘要翻译：公开了具有新型接触结构的半导体器件的布线层。半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一形成在绝缘层上的完全填充开口的导电层。由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。因此，可以确保用溅射的Al完全填充开口。尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

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