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21. 发明申请

US20160320701A1 METHOD TO HARDEN PHOTORESIST FOR DIRECTED SELF-ASSEMBLY PROCESSES 有权
标题翻译：用于指导自组装过程的硬质合金的方法
公开(公告)号：US20160320701A1
公开(公告)日：2016-11-03
申请号：US14697669
申请日：2015-04-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Joy Cheng , Matthew E. Colburn , Chi-Chun Liu
IPC分类号： G03F7/039 , H01L21/308 , G03F7/40
CPC分类号： G03F7/039 , G03F7/0002 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/3086
摘要： A patterned photoresist is provided atop a substrate. A hardening agent is applied to the patterned photoresist to provide a polymeric coated patterned photoresist. The polymeric coated patterned photoresist is baked to provide a hardened photoresist, and subsequent the baking step, the polymeric coating is removed from the hardened photoresist by rinsing. The hardened photoresist can be removed anytime during the patterning of the substrate by an aqueous resist developer.
摘要翻译：图案化的光致抗蚀剂被提供在衬底顶部。将硬化剂施加到图案化的光致抗蚀剂以提供聚合物涂覆的图案化的光致抗蚀剂。将聚合物涂覆的图案化光刻胶烘烤以提供硬化的光致抗蚀剂，随后在烘烤步骤中，通过冲洗将聚合物涂层从硬化的光致抗蚀剂中除去。在通过含水抗蚀剂显影剂对基材图案化期间，可以随时去除硬化的光致抗蚀剂。

22. 发明授权

US09305845B2 Self-aligned quadruple patterning process 有权
标题翻译：自对准四重图案化工艺
公开(公告)号：US09305845B2
公开(公告)日：2016-04-05
申请号：US14477450
申请日：2014-09-04
申请人： International Business Machines Corporation
发明人： Matthew E. Colburn , Sivananda K. Kanakasabapathy , Fee Li Lie , Stuart A. Sieg
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/306 , H01L21/308 , H01L21/3105 , H01L21/311 , H01L29/66
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/30608 , H01L21/308 , H01L21/3086 , H01L21/31122 , H01L21/32137 , H01L21/823431 , H01L29/6653 , H01L29/66553 , H01L29/6656 , Y10S438/947
摘要： Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.
摘要翻译：提供了用于修改间隔物和/或间隔物之间的空间的方法，以使翅片切割掩模能够落在间隔件之间。具有第一宽度的第一组第二心轴结构形成在相邻的一对第一心轴结构的相对侧壁表面上，并且具有小于第一宽度的第二宽度的第二组第二心轴结构形成在非面对侧壁表面上的相邻的第一心轴结构对。移除每个第一心轴结构，并且在第一和第二组第二心轴结构的侧壁表面上形成间隔件。在相邻的一对第一心轴结构之间的区域中形成合并间隔物。去除第一和第二组第二心轴结构。可以利用每个间隔物和合并的间隔物作为蚀刻掩模来图案化一部分底层基底。

23. 发明授权

US09123658B2 Grapho-epitaxy DSA process with dimension control of template pattern 有权
标题翻译： Grapho外延DSA过程与模板图案的尺寸控制
公开(公告)号：US09123658B2
公开(公告)日：2015-09-01
申请号：US14327968
申请日：2014-07-10
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jassem A. Abdallah , Matthew E. Colburn , Steven J. Holmes , Chi-Chun Liu
IPC分类号： H01L21/311 , H01L21/308 , H01L21/3065
CPC分类号： H01L21/3086 , G03F7/0002 , H01L21/0337 , H01L21/3065 , H01L21/3081
摘要： A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.
摘要翻译：用于定义用于定向自组装（DSA）材料的模板的方法包括在包括ARC和在亲水层上形成的掩模的堆叠上构图抗蚀剂。通过蚀刻ARC和掩模形成图案，以形成修剪成小于最小特征尺寸（L）的模板线。在模板线上形成疏水间隔物，并包括L的分数宽度。将中性刷层接枝到亲水层。 DSA材料沉积在间隔物之间并退火以形成第一和第二材料的交替线形式的材料区域，其中与间隔物接触的第一材料包括小于线宽度的宽度。向形成耐蚀刻第二材料的区域中加入金属。去除第一材料和间隔物以形成DSA模板图案。

24. 发明申请

US20150170927A1 INTEGRATION OF DENSE AND VARIABLE PITCH FIN STRUCTURES 有权
标题翻译：渗透和变形钻石结构的整合
公开(公告)号：US20150170927A1
公开(公告)日：2015-06-18
申请号：US14632313
申请日：2015-02-26
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Kangguo Cheng , Matthew E. Colburn , Bruce B. Doris , Ali Khakifirooz
IPC分类号： H01L21/308
CPC分类号： H01L21/3086 , H01L21/3088 , H01L21/845 , H01L27/0886 , H01L27/10826 , H01L27/1104 , H01L29/0657
摘要： Methods for forming semiconductor devices. Methods for forming fin structures include forming first sidewalls around a first set of mandrels. The first set of mandrels is removed and second sidewalls are formed around the first sidewalls and a second set of mandrels. The first sidewalls and the second set of mandrels are removed and an underlying layer around the second sidewalls is etched.
摘要翻译：半导体器件形成方法。形成翅片结构的方法包括围绕第一组心轴形成第一侧壁。去除第一组心轴，并且在第一侧壁和第二组心轴周围形成第二侧壁。去除第一侧壁和第二组心轴，并且蚀刻围绕第二侧壁的下层。

25. 发明申请

US20140099583A1 SIMULTANEOUS PHOTORESIST DEVELOPMENT AND NEUTRAL POLYMER LAYER FORMATION 有权
标题翻译：同时光电子发展和中性聚合物层形成
公开(公告)号：US20140099583A1
公开(公告)日：2014-04-10
申请号：US13644683
申请日：2012-10-04
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Steven J. Holmes , Jassem Ahmed Abdallah , Joy Cheng , Matthew E. Colburn , Chi-chun Liu
IPC分类号： G03F7/20 , B82Y40/00
CPC分类号： G03F7/094 , B82Y40/00 , G03F7/0002 , G03F7/038 , G03F7/039 , G03F7/325
摘要： A photoresist layer is lithographically exposed to form lithographically exposed photoresist regions and lithographically unexposed photoresist regions. The photoresist layer is developed with a non-polar or weakly polar solvent including a dissolved neutral polymer material. A neutral polymer layer is selectively formed on physically exposed surfaces of a hard mask layer underlying the photoresist layer. The neutral polymer layer has a pattern corresponding to the complement of the area of remaining portions of the photoresist layer. The remaining portions of the photoresist layer are then removed with a polar solvent without removing the neutral polymer layer on the hard mask layer. A block copolymer material can be subsequently applied over the neutral polymer, and the neutral polymer layer can guide the alignment of a phase-separated block copolymer material in a directed self-assembly.
摘要翻译：光致抗蚀剂层被光刻曝光以形成光刻曝光的光致抗蚀剂区域和光刻未曝光的光致抗蚀剂区域。光致抗蚀剂层用非极性或弱极性溶剂显影，包括溶解的中性聚合物材料。中性聚合物层选择性地形成在光致抗蚀剂层下面的硬掩模层的物理暴露的表面上。中性聚合物层具有对应于光致抗蚀剂层的剩余部分的面积的互补的图案。然后用极性溶剂除去光致抗蚀剂层的剩余部分，而不去除硬掩模层上的中性聚合物层。随后可以在中性聚合物上施加嵌段共聚物材料，并且中性聚合物层可引导定向自组装中相分离的嵌段共聚物材料的取向。

26. 发明申请

US20130175658A1 TONE INVERSION WITH PARTIAL UNDERLAYER ETCH FOR SEMICONDUCTOR DEVICE FORMATION 审中-公开
标题翻译：用于半导体器件形成的部分底层蚀刻的色调反演
公开(公告)号：US20130175658A1
公开(公告)日：2013-07-11
申请号：US13784959
申请日：2013-03-05
申请人： International Business Machines Corporation
发明人： John C. Arnold , Sean D. Burns , Matthew E. Colburn , Steven J. Holmes , Yunpeng Yin
IPC分类号： H01L23/00
CPC分类号： H01L23/00 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.
摘要翻译：用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

27. 发明申请

US20180197738A1 SELF ALIGNED PATTERN FORMATION POST SPACER ETCHBACK IN TIGHT PITCH CONFIGURATIONS 审中-公开
公开(公告)号：US20180197738A1
公开(公告)日：2018-07-12
申请号：US15786090
申请日：2017-10-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
IPC分类号： H01L21/033 , H01L21/768 , H01L23/528 , H01L21/311 , H01L45/00 , H01L21/027 , H01L21/31 , H01L21/28 , H01L51/00
CPC分类号： H01L21/0337 , H01L21/0274 , H01L21/28123 , H01L21/31 , H01L21/31144 , H01L21/32139 , H01L21/76816 , H01L21/76897 , H01L23/528 , H01L45/1675 , H01L51/0018 , H01L2224/0362 , H01L2224/11622
摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

28. 发明授权

US09991156B2 Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs 有权
公开(公告)号：US09991156B2
公开(公告)日：2018-06-05
申请号：US15172265
申请日：2016-06-03
申请人： International Business Machines Corporation
发明人： Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Sivananda K. Kanakasabapathy , Yann A. M. Mignot , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
IPC分类号： H01L21/768 , H01L21/02 , H01L21/027 , H01L21/033 , H01L21/311 , H01L23/528 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76816 , H01L21/02164 , H01L21/0217 , H01L21/02697 , H01L21/027 , H01L21/0338 , H01L21/31116 , H01L21/76885 , H01L21/76886 , H01L21/76892 , H01L23/5226 , H01L23/528 , H01L23/53266
摘要： An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a βγβ jog; a βαβ jog; an αβγ jog; a γβα jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.

29. 发明授权

US09601345B2 Fin trimming in a double sit process 有权
公开(公告)号：US09601345B2
公开(公告)日：2017-03-21
申请号：US14670494
申请日：2015-03-27
申请人： International Business Machines Corporation
发明人： Kangguo Cheng , Matthew E. Colburn , Bruce B. Doris , Ali Khakifirooz
IPC分类号： H01L29/06 , H01L21/308 , H01L21/3065 , H01L27/088
CPC分类号： H01L21/3086 , H01L21/3065 , H01L21/823431 , H01L27/0886
摘要： A semiconductor structure and the method of forming that semiconductor structure. The method includes formation of a plurality of fins from a layer of semiconductor material. At least one fin of the plurality of fins is at least fifty percent wider than each of a group of fins included in the plurality of fins. The method also includes selectively removing the one fin such that only the group of fins remain.

30. 发明申请

US20160322259A1 GRAPHOEPITAXY DIRECTED SELF-ASSEMBLY PROCESS FOR SEMICONDUCTOR FIN FORMATION 有权
标题翻译：用于SEMICONDUCTOR FIN形成的GRAPHOEPITAXY指导自组装过程
公开(公告)号：US20160322259A1
公开(公告)日：2016-11-03
申请号：US14697693
申请日：2015-04-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Joy Cheng , Matthew E. Colburn , Michael A. Guillorn , Chi-Chun Liu , Melia Tjio , HsinYu Tsai
IPC分类号： H01L21/8234 , H01L21/308 , H01L21/027 , H01L21/84
CPC分类号： H01L21/823431 , G03F7/0002 , G03F7/0752 , G03F7/0755 , G03F7/094 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/3081 , H01L21/3086 , H01L21/845
摘要： Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.
摘要翻译：引导图案部分形成在设置在半导体基板的表面上的平版印刷材料堆叠的表面上。然后在每个相邻的一对引导图案部分之间形成共聚物层，然后执行引导共聚物层的各种聚合物域的相分离的定向自组装工艺。选择性地去除每个引导图案部分，随后除去每个第一相分离的聚合物结构域。每个第二相分离的聚合物畴保留，并且在半导体衬底的上半导体材料部分中形成半导体鳍片时用作蚀刻掩模。

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