专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US09105619B2 Semiconductor package with conductive heat spreader 有权
标题翻译：半导体封装带导热散热器
公开(公告)号：US09105619B2
公开(公告)日：2015-08-11
申请号：US13769198
申请日：2013-02-15
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Chuan Cheah , Kunzhong Hu
IPC分类号： H01L23/495 , H01L23/31 , H01L23/433 , H01L23/367
CPC分类号： H01L23/495 , H01L23/3107 , H01L23/367 , H01L23/4334 , H01L23/49568 , H01L2224/16245 , H01L2224/32245 , H01L2224/73253
摘要： A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.
摘要翻译：一种半导体封装，其包括半导体管芯和散热器，所述散热器热耦合到所述半导体并且至少部分地设置在所述封装的模制外壳内。

22. 发明申请

US20150207495A1 Power Converter with Split Voltage Supply 有权
标题翻译：电源转换器，分压供电
公开(公告)号：US20150207495A1
公开(公告)日：2015-07-23
申请号：US14675485
申请日：2015-03-31
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Jason Zhang , Hamid Tony Bahramian
IPC分类号： H03K3/012
CPC分类号： H03K3/012 , H02M3/1588 , H02M7/538 , H03K17/6871 , H03K2217/0036 , Y02B70/1466
摘要： A power converter driver that is supplied with two different voltages.
摘要翻译：电源转换器驱动器，提供两种不同的电压。

23. 发明授权

US09070755B2 Transistor having elevated drain finger termination 有权
标题翻译：晶体管具有升高的漏极指状端接
公开(公告)号：US09070755B2
公开(公告)日：2015-06-30
申请号：US13941335
申请日：2013-07-12
申请人： International Rectifier Corporation
发明人： Michael A. Briere , Reenu Garg
IPC分类号： H01L29/66 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/40 , H01L29/78 , H01L29/20
CPC分类号： H01L29/41758 , H01L29/20 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/778 , H01L29/7787 , H01L29/78
摘要： According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.
摘要翻译：根据示例性实施方式，晶体管包括与源极指状电极相互指向的漏极指状电极。晶体管还包括在漏极指状电极和源极指状电极之间的半导体衬底中的电流传导路径。漏极指电极中的至少一个具有漏极指电极端和漏极指状电极主体，其中漏极指状电极主体与漏极指状电极末端的至少一部分非共面。晶体管还可以包括位于漏极指状电极端部和半导体衬底的至少一部分之间的电介质材料。介电材料可以是增加厚度的介电材料。因此，电介质材料可以使漏极指电极末端上升半导体衬底。此外，漏极指电极端可以具有增加的曲率半径。

24. 发明授权

US09041067B2 Integrated half-bridge circuit with low side and high side composite switches 有权
标题翻译：集成半桥电路，具有低边和高边复合开关
公开(公告)号：US09041067B2
公开(公告)日：2015-05-26
申请号：US14168926
申请日：2014-01-30
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/72 , H01L27/06 , H01L21/8252 , H01L27/085 , H02M3/337 , H01L27/088
CPC分类号： H01L27/0623 , H01L21/8252 , H01L21/8258 , H01L27/0605 , H01L27/0688 , H01L27/0694 , H01L27/085 , H01L27/0883 , H01L2224/48091 , H01L2224/48145 , H01L2924/13091 , H02M3/337 , H03K17/107 , H03K17/567 , H03K2017/6875 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： There are disclosed herein various implementations of an integrated half-bridge circuit with low side and high side composite switches. In one exemplary implementation, such an integrated half-bridge circuit includes a III-N body including first and second III-N field-effect transistors (FETs) monolithically integrated with and situated over a first group IV FET. The integrated half-bridge circuit also includes a second group IV FET stacked over the III-N body. The first group IV FET is cascoded with the first III-N FET to provide one of the low side and the high side composite switches, and the second group IV FET is cascoded with the second III-N FET to provide the other of the low side and the high side composite switches. The first and second III-N FETs are normally ON FETs, and the low side composite switch and the high side composite switch are normally OFF switches
摘要翻译：这里公开了具有低侧和高侧复合开关的集成半桥电路的各种实施方式。在一个示例性实施方案中，这种集成半桥电路包括III-N体，其包括与第一组IV FET单片集成并位于第一组IV FET之上的第一和第二III-N场效应晶体管（FET）。集成半桥电路还包括堆叠在III-N体上的第二组IV FET。第一组IV FET与第一III-N FET串联以提供低侧和高侧复合开关之一，并且第二组IV FET与第二III-N FET级联以提供另一个低侧和高侧复合开关。第一和第二III-N FET通常为ON FET，低压复合开关和高侧复合开关通常为OFF开关

25. 发明授权

US08987784B2 Active area shaping of III-nitride devices utilizing multiple dielectric materials 有权
标题翻译：使用多种介电材料的III族氮化物器件的有源面积成形
公开(公告)号：US08987784B2
公开(公告)日：2015-03-24
申请号：US14081798
申请日：2013-11-15
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/66 , H01L29/778 , H01L21/28 , H01L29/423 , H01L29/20 , H01L29/51 , H01L23/31
CPC分类号： H01L29/778 , H01L21/28264 , H01L23/3192 , H01L29/2003 , H01L29/42376 , H01L29/518 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a dielectric body situated over the III-nitride heterojunction and including a first dielectric layer of a first dielectric material and a second dielectric layer of a second dielectric material different than the first dielectric material. A gate well of a first width is defined by the first dielectric layer, and is of a second width defined by the second dielectric layer, where the second width is greater than the first width. The III-nitride semiconductor device further includes a gate arrangement situated in the gate well and including a gate electrode integrated with a field plate.
摘要翻译：在示例性实施方案中，III族氮化物半导体器件包括III族氮化物异质结，其包括位于第二III族氮化物体上方的第一III族氮化物体，以形成二维电子气。 III族氮化物半导体器件还包括位于III族氮化物异质结上方的电介质体，并且包括第一电介质材料的第一电介质层和与第一电介质材料不同的第二电介质材料的第二电介质层。第一宽度的栅极阱由第一介电层限定，并且具有由第二介电层限定的第二宽度，其中第二宽度大于第一宽度。 III族氮化物半导体器件还包括位于栅极阱中并包括与场板集成的栅电极的栅极布置。

26. 发明申请

US20150014703A1 III-NITRIDE Device with Solderable Front Metal 有权
标题翻译：具有可焊接前金属的III-NITRIDE器件
公开(公告)号：US20150014703A1
公开(公告)日：2015-01-15
申请号：US14505417
申请日：2014-10-02
申请人： International Rectifier Corporation
发明人： Chuan Cheah , Michael A. Briere
IPC分类号： H01L29/778 , H01L29/417 , H01L29/205 , H01L29/45 , H01L29/20 , H01L29/201
CPC分类号： H01L29/41758 , H01L23/293 , H01L23/4824 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L27/088 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/4175 , H01L29/452 , H01L29/7787 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05022 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05555 , H01L2224/05556 , H01L2224/05563 , H01L2224/05567 , H01L2224/056 , H01L2224/05639 , H01L2224/0603 , H01L2224/0615 , H01L2224/0616 , H01L2224/06177 , H01L2224/131 , H01L2224/29005 , H01L2224/29014 , H01L2224/29023 , H01L2224/291 , H01L2224/29101 , H01L2224/2919 , H01L2224/3003 , H01L2224/3015 , H01L2224/30177 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/10253 , H01L2924/1306 , H01L2924/13064 , H01L2924/14 , H01L2924/19041 , H02M3/158 , H01L2924/01028 , H01L2924/00
摘要： Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.
摘要翻译：已经公开了包括具有多个互连金属层的HEMT和使用用于外部电路连接的焊料条的可焊接前金属结构的III族氮化物功率器件的一些示例性实施例。可焊接的前金属结构可以包括诸如TiNiAg的三金属，并且可以被配置为暴露HEMT的源极和漏极触点作为交替的细长数字或条。另外，单个封装可以集成多个这样的HEMT，其中前金属结构暴露出交替的指示的源极和漏极触点，这对于使用III族氮化物器件的DC-DC功率转换电路设计是有利的。通过使用焊条进行外部电路连接，可以进行横向导通，从而有利于减少器件Rdson。

27. 发明申请

US20140339686A1 Group III-V Device with a Selectively Modified Impurity Concentration 有权
标题翻译：具有选择性改进的杂质浓度的III-V族装置
公开(公告)号：US20140339686A1
公开(公告)日：2014-11-20
申请号：US14449057
申请日：2014-07-31
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/10 , H01L29/20 , H01L21/02 , H01L29/36
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02389 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/0262 , H01L21/02634 , H01L29/1095 , H01L29/157 , H01L29/205 , H01L29/207 , H01L29/36 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
摘要翻译：这里公开了半导体结构和方法的各种实施方式。半导体结构包括衬底，在衬底上的过渡体，以及在过渡体上具有底表面的III-V族中间体。半导体结构还包括III-V族中间体顶表面上的III-V族元件层。 III-V族中间体具有连续降低的杂质浓度，其中底表面处的较高杂质浓度在顶表面上连续地降低到较低的杂质浓度。

28. 发明申请

US20140339605A1 Group III-V Device with a Selectively Reduced Impurity Concentration 有权
标题翻译：具有选择性降低杂质浓度的III-V族装置
公开(公告)号：US20140339605A1
公开(公告)日：2014-11-20
申请号：US14449491
申请日：2014-08-01
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L29/20 , H01L29/205 , H01L21/02 , H01L29/66 , H01L29/778
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02389 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/0262 , H01L21/02634 , H01L29/1095 , H01L29/157 , H01L29/205 , H01L29/207 , H01L29/36 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
摘要翻译：这里公开了半导体结构和方法的各种实施方式。半导体结构包括衬底，在衬底上的过渡体，以及在过渡体上具有底表面的III-V族中间体。半导体结构还包括III-V族中间体顶表面上的III-V族元件层。 III-V族中间体具有连续降低的杂质浓度，其中底表面处的较高杂质浓度在顶表面上连续地降低到较低的杂质浓度。

29. 发明授权

US08729644B2 Programmable III-nitride semiconductor device 有权
标题翻译：可编程III族氮化物半导体器件
公开(公告)号：US08729644B2
公开(公告)日：2014-05-20
申请号：US13906098
申请日：2013-05-30
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L21/02
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4232 , H01L29/42328 , H01L29/42336 , H01L29/51 , H01L29/513 , H01L29/518 , H01L29/66431 , H01L29/772 , H01L29/7787 , H01L29/803
摘要： A III-nitride semiconductor device which includes a charged gate insulation body.
摘要翻译：一种III族氮化物半导体器件，包括带电栅极绝缘体。

30. 发明申请

US20140106548A1 Fabrication of III-Nitride Semiconductor Device and Related Structures 有权
标题翻译：三氮化硅半导体器件及相关结构的制作
公开(公告)号：US20140106548A1
公开(公告)日：2014-04-17
申请号：US14135425
申请日：2013-12-19
申请人： International Rectifier Corporation
发明人： Robert Beach , Michael A. Briere , Paul Bridger
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0262 , H01L21/02631 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括使用至少两种截然不同的生长方法在衬底上生长过渡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式