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21. 发明授权

US07057212B2 Flip chip nitride semiconductor light emitting diode 有权
标题翻译：倒装氮化硅半导体发光二极管
公开(公告)号：US07057212B2
公开(公告)日：2006-06-06
申请号：US10867755
申请日：2004-06-16
申请人： Hyun Kyung Kim , Young June Jeong , Yong Chun Kim
发明人： Hyun Kyung Kim , Young June Jeong , Yong Chun Kim
IPC分类号： H01L29/22 , H01L21/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/14 , Y10S257/918
摘要： In a nitride semiconductor LED, an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride semiconductor layer is formed on the active layer. A high reflectivity Ohmic contact layer of a mesh structure is formed on the p-doped nitride semiconductor layer and has a number of open areas for exposing the p-doped nitride semiconductor layer. A metal barrier layer is formed on at least a top region of the high reflectivity Ohmic contact layer. A p-bonding electrode is formed on the metal barrier layer. An n-electrode is formed on the n-doped nitride semiconductor layer.
摘要翻译：在氮化物半导体LED中，在透明基板上形成n掺杂氮化物半导体层。在n掺杂氮化物半导体层上形成有源层。在有源层上形成p掺杂的氮化物半导体层。高反射率网状结构的欧姆接触层形成在p掺杂氮化物半导体层上，并且具有用于暴露p掺杂氮化物半导体层的多个开放区域。金属阻挡层形成在高反射率欧姆接触层的至少顶部区域上。在金属阻挡层上形成p型接合电极。在n掺杂氮化物半导体层上形成n电极。

22. 发明授权

US08728841B2 Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency 有权
标题翻译：制造具有增强的光提取效率的耐ESD氮化物半导体发光器件的方法
公开(公告)号：US08728841B2
公开(公告)日：2014-05-20
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

23. 发明授权

US08426880B2 Semiconductor light emitting device and method of manufacturing the same 失效
公开(公告)号：US08426880B2
公开(公告)日：2013-04-23
申请号：US12155877
申请日：2008-06-11
申请人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
发明人： Ho Young Song , Dong Yu Kim , Jeong Woo Park , Yong Chun Kim , Hyung Ky Back
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/16 , H01L33/22
摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

24. 发明授权

US08269242B2 Semiconductor light emitting device having surface plasmon layer 有权
标题翻译：具有表面等离子体层的半导体发光器件
公开(公告)号：US08269242B2
公开(公告)日：2012-09-18
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

25. 发明申请

US20120129289A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120129289A1
公开(公告)日：2012-05-24
申请号：US13365056
申请日：2012-02-02
申请人： Jeong Tak OH , Yong Chun Kim
发明人： Jeong Tak OH , Yong Chun Kim
IPC分类号： H01L33/02
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

26. 发明授权

US08134170B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08134170B2
公开(公告)日：2012-03-13
申请号：US12620260
申请日：2009-11-17
申请人： Jeong Tak Oh , Yong Chun Kim
发明人： Jeong Tak Oh , Yong Chun Kim
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02587 , H01L33/007 , H01L33/06 , H01L33/20 , H01L33/24
摘要： A nitride semiconductor light emitting device, and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer disposed on the substrate and including a plurality of V-shaped pits in a top surface thereof, an active layer disposed on the n-type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-shaped pits, and a p-type nitride semiconductor layer disposed on the active layer and including a plurality of protrusions on a top surface thereof. Since the plurality of V-shaped pits are formed in the top surface of the n-type nitride semiconductor layer, the protrusions can be formed on the p-type nitride semiconductor layer as an in-situ process. Accordingly, the resistance to ESD, and light extraction efficiency are enhanced.
摘要翻译：公开了一种氮化物半导体发光器件及其制造方法。氮化物半导体发光器件包括衬底，设置在衬底上的n型氮化物半导体层，在其顶表面中包括多个V形凹坑，设置在n型氮化物半导体层上的有源层，并且包括符合多个V形凹坑的形状的凹陷以及设置在活性层上的p型氮化物半导体层，并且在其顶表面上包括多个突起。由于在n型氮化物半导体层的顶表面上形成多个V形凹坑，所以可以作为原位工艺在p型氮化物半导体层上形成突起。因此，提高了对ESD的耐受性和光提取效率。

27. 发明授权

US08030640B2 Nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08030640B2
公开(公告)日：2011-10-04
申请号：US12618164
申请日：2009-11-13
申请人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
发明人： Jeong Tak Oh , Yong Chun Kim , Dong Joon Kim , Dong Ju Lee
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/18 , H01L33/20 , H01L33/32
摘要： A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.
摘要翻译：氮化物半导体发光器件包括衬底，设置在衬底上的第一导电型氮化物半导体层，并且包括放置在其顶表面中的多个V凹坑，形成在每个V形衬底的顶点区域中的硅化合物，凹坑，设置在第一导电型氮化物半导体层上并包括符合多个V凹坑形状的凹陷的有源层和设置在有源层上的第二导电型氮化物半导体层。氮化物半导体发光器件在接收到静电时实现了高静电放电（ESD）的抗性，因为电流集中在V型凹坑中，并且硅化合物置于由晶格缺陷引起的位错上。

28. 发明申请

US20100019223A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20100019223A1
公开(公告)日：2010-01-28
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

29. 发明申请

US20090173965A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD 有权
标题翻译：使用该方法制造的氮化物半导体发光器件和氮化物半导体发光器件的制造方法
公开(公告)号：US20090173965A1
公开(公告)日：2009-07-09
申请号：US12249049
申请日：2008-10-10
申请人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
发明人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L33/20
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和使用其制造的氮化物半导体发光器件。根据本发明的一个方面的制造氮化物半导体发光器件的方法包括：在衬底上形成掩模层; 去除掩模层的一部分以形成设置为形成发光结构的区域的开口; 通过在掩模层的每个开口上顺序地生长第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，从而形成发光结构; 以及分别形成与第一和第二导电型氮化物半导体层电连接的第一和第二电极。

30. 发明申请

US20090032800A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE 失效
标题翻译：光电晶体发光器件
公开(公告)号：US20090032800A1
公开(公告)日：2009-02-05
申请号：US12182509
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/44 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙，由此纳米棒发光结构限定了光子晶体结构。在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

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