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21. 发明授权

US07364967B2 Methods of forming storage capacitors for semiconductor devices 有权
标题翻译：形成半导体器件的储存电容器的方法
公开(公告)号：US07364967B2
公开(公告)日：2008-04-29
申请号：US11266520
申请日：2005-11-03
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

22. 发明授权

US07068559B2 Word line enable timing determination circuit of a memory device and methods of determining word line enable timing in the memory device 失效
标题翻译：存储器件的字线使能定时确定电路以及在存储器件中确定字线使能定时的方法
公开(公告)号：US07068559B2
公开(公告)日：2006-06-27
申请号：US10950478
申请日：2004-09-28
申请人： Hyun-Suk Lee , Kyung-Woo Nam
发明人： Hyun-Suk Lee , Kyung-Woo Nam
IPC分类号： G11C7/00
CPC分类号： G11C11/40603 , G11C11/406 , G11C11/40615 , G11C2211/4061
摘要： A word line enable timing determination circuit of a memory device and method of determining word line enable timing in a memory device may be configured to adjust enable timing at which to activate a word line for at least one read/write command input to the memory device. This may be based on whether the memory device is performing a hidden refresh operation. In an example, and when a read/write command is input to the memory device, a word line for the read/write command may be activated after a first delay if the memory device is not executing a hidden refresh operation. Otherwise, a word line for the read/write command is activated after a second delay.
摘要翻译：存储器件的字线使能定时确定电路和确定存储器件中的字线使能定时的方法可以被配置为调整对存储器件的输入至少一个读/写命令的激活字线的使能定时。这可能是基于存储设备是否执行隐藏的刷新操作。在一个示例中，并且当读/写命令被输入到存储器件时，如果存储器件未执行隐藏的刷新操作，则可以在第一延迟之后激活读/写命令的字线。否则，读/写命令的字线在第二个延迟之后被激活。

23. 发明申请

US20050208257A1 Optical data storage medium with super resolution layer 失效
标题翻译：具有超分辨率层的光学数据存储介质
公开(公告)号：US20050208257A1
公开(公告)日：2005-09-22
申请号：US10977604
申请日：2004-10-28
申请人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
发明人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
IPC分类号： B32B3/02 , G11B7/24 , G11B7/243
CPC分类号： G11B7/243 , G11B7/24 , G11B2007/24312 , Y10T428/21
摘要： An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.
摘要翻译：光学数据存储介质包括由热电材料组成的超分辨率（SR）层，所述SR层在入射光的波长处具有光吸收，透射率和反射率，并保持结晶单相，而不会在材料的熔化温度。通过在激光照射下在SR层的局部区域内的热电感应光学变化来执行从数据和/或SR写数据到介质上的SR读出。

24. 发明申请

US20050083752A1 Word line enable timing determination circuit of a memory device and methods of determining word line enable timing in the memory device 失效
标题翻译：存储器件的字线使能定时确定电路以及在存储器件中确定字线使能定时的方法
公开(公告)号：US20050083752A1
公开(公告)日：2005-04-21
申请号：US10950478
申请日：2004-09-28
申请人： Hyun-Suk Lee , Kyung-Woo Nam
发明人： Hyun-Suk Lee , Kyung-Woo Nam
IPC分类号： G11C11/406 , G11C8/00
CPC分类号： G11C11/40603 , G11C11/406 , G11C11/40615 , G11C2211/4061
摘要： A word line enable timing determination circuit of a memory device and method of determining word line enable timing in a memory device may be configured to adjust enable timing at which to activate a word line for at least one read/write command input to the memory device. This may be based on whether the memory device is performing a hidden refresh operation. In an example, and when a read/write command is input to the memory device, a word line for the read/write command may be activated after a first delay if the memory device is not executing a hidden refresh operation. Otherwise, a word line for the read/write command is activated after a second delay.
摘要翻译：存储器件的字线使能定时确定电路和确定存储器件中的字线使能定时的方法可以被配置为调整对存储器件的输入至少一个读/写命令的激活字线的使能定时。这可能是基于存储设备是否执行隐藏的刷新操作。在一个示例中，并且当读/写命令被输入到存储器件时，如果存储器件未执行隐藏的刷新操作，则可以在第一延迟之后激活读/写命令的字线。否则，读/写命令的字线在第二个延迟之后被激活。

25. 发明授权

US06847572B2 Refresh control circuit and methods of operation and control of the refresh control circuit 失效
标题翻译：刷新控制电路和刷新控制电路的操作和控制方法
公开(公告)号：US06847572B2
公开(公告)日：2005-01-25
申请号：US10421739
申请日：2003-04-24
申请人： Hyun-Suk Lee , Kyung-Woo Nam
发明人： Hyun-Suk Lee , Kyung-Woo Nam
IPC分类号： G11C11/401 , G11C11/406 , G11C7/00
CPC分类号： G11C11/40603 , G11C11/406 , G11C11/40615 , G11C2211/4061
摘要： A refresh operation in a PSRAM device to hidden-refresh an internal memory cell by using a refresh pulse signal may be controlled by forming a dummy duration for the refresh operation in a read/write cycle, reducing the dummy duration when the refresh pulse signal is not generated, and delaying the read/write cycle until the refresh operation is completed, when the refresh pulse signal is generated. The dummy duration may be reduced by a given amount during a period in which the refresh operation is not being performed, while the dummy duration may be increased in period of time subject to the refresh operation.
摘要翻译：可以通过在读/写周期中形成用于刷新操作的虚拟持续时间来控制通过使用刷新脉冲信号对内部存储单元进行隐藏刷新的PSRAM器件中的刷新操作，从而在刷新脉冲信号为并且在产生刷新脉冲信号时延迟读/写周期直到刷新操作完成。虚拟持续时间可以在不执行刷新操作的时段期间减少给定的量，而虚拟持续时间可以在经历刷新操作的时间段内增加。

26. 发明授权

US08233025B2 Mobile terminal and method for controlling video call thereof 有权
标题翻译：移动终端及其视频通话控制方法
公开(公告)号：US08233025B2
公开(公告)日：2012-07-31
申请号：US12341285
申请日：2008-12-22
申请人： Hyun-Suk Lee , An-Na Choi , Jin-Ho Son , Sun-Ju Lee , Jae-Do Kwak , Jong-Keun Youn
发明人： Hyun-Suk Lee , An-Na Choi , Jin-Ho Son , Sun-Ju Lee , Jae-Do Kwak , Jong-Keun Youn
IPC分类号： H04N7/14
CPC分类号： H04N7/147 , G10L15/26
摘要： A mobile terminal including an input unit configured to receive an instruction from a first user to perform a video call communication with at least a second user, a display unit, a voice recognition module configured to recognize input voice statements conducted during the video call communication between the first and second users, and a controller configured to perform the video call communication between the first and second users based on the instruction from the first user, to control the display unit to display images of the first and second users, to detect a voice statement from the first user designating the second user by examining the voice statements recognized by the voice recognition module, and to emphatically display the image of the second user compared with the image of the first user based on the detected voice statement from the first user.
摘要翻译：一种移动终端，包括被配置为从第一用户接收指令以执行与至少第二用户的视频呼叫通信的输入单元，显示单元，语音识别模块，被配置为识别在视频通话通信期间进行的输入语音语句第一用户和第二用户，以及控制器，被配置为基于来自第一用户的指令执行第一和第二用户之间的视频呼叫通信，以控制显示单元显示第一和第二用户的图像，以检测语音通过检查由语音识别模块识别的语音语句，从第一用户指定第二用户的语句，并且基于来自第一用户的检测到的语音语句，强调显示与第一用户的图像相比的第二用户的图像。

27. 发明申请

US20100243982A1 VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME 有权
标题翻译：可变电阻非挥发性记忆细胞及其制备方法
公开(公告)号：US20100243982A1
公开(公告)日：2010-09-30
申请号：US12796084
申请日：2010-06-08
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

28. 发明授权

US07758941B2 Optical data storage medium with super resolution layer 失效
标题翻译：具有超分辨率层的光学数据存储介质
公开(公告)号：US07758941B2
公开(公告)日：2010-07-20
申请号：US10977604
申请日：2004-10-28
申请人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
发明人： Byung-Ki Cheong , Hyun-Suk Lee , Taek-Sung Lee , Won-Mok Kim , Kyeong-Seok Lee , Jae-Won Lee , Sung-Ho Cho
IPC分类号： B32B3/02
CPC分类号： G11B7/243 , G11B7/24 , G11B2007/24312 , Y10T428/21
摘要： An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.
摘要翻译：光学数据存储介质包括由热电材料组成的超分辨率（SR）层，所述SR层在入射光的波长处具有光吸收，透射率和反射率，并保持晶体单相，而不会在低于材料的熔化温度。通过在激光照射下在SR层的局部区域内的热电感应光学变化来执行从数据和/或SR写数据到介质上的SR读出。

29. 发明申请

US20100129947A1 Resistance-variable memory device, method for fabricating the same and memory system including the same 审中-公开
标题翻译：电阻可变存储器件，其制造方法和包括该器件的存储器系统
公开(公告)号：US20100129947A1
公开(公告)日：2010-05-27
申请号：US12591393
申请日：2009-11-18
申请人： Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
发明人： Hyun-Suk Lee , Tai-Soo Lim , HyunSeok Lim , Insun Park , Jaehyoung Choi
IPC分类号： H01L45/00 , H01L21/00
CPC分类号： H01L45/141 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/16
摘要： In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode.
摘要翻译：在制造可变电阻存储器件的方法中，提供了包括导电区域的衬底，并且在导电区域上形成预备下电极。通过氧化预备下电极的上部形成下电极。在下电极上形成相变材料层。

30. 发明授权

US07524724B2 Method of forming titanium nitride layer and method of fabricating capacitor using the same 有权
标题翻译：形成氮化钛层的方法和使用其制造电容器的方法
公开(公告)号：US07524724B2
公开(公告)日：2009-04-28
申请号：US11173771
申请日：2005-06-30
申请人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
发明人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
IPC分类号： H01L21/20
CPC分类号： C23C16/45529 , C23C16/34 , H01L27/10817 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.
摘要翻译：一种制造存储电容器的方法包括使用化学气相沉积技术或在第一温度下用氯化钛（TiCl 4）气体和氨（NH 3））的反应气体进行的原子层沉积技术在电介质层上沉积第一氮化钛层，气体以预定的流量比并且在第二氮化钛层上沉积第二氮化钛层，所述化学气相沉积工艺是在第二温度下用氯化钛（TiCl 4）气体和氨的反应气体 NH3）气体。

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