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21. 发明申请

US20070005217A1 Speed controller for car using telematics and control method thereof 有权
标题翻译：使用远程信息处理的汽车速度控制器及其控制方法
公开(公告)号：US20070005217A1
公开(公告)日：2007-01-04
申请号：US11170079
申请日：2005-06-30
申请人： Seong-Taeg Nou , Hyeon-Su Kim , Chang-Hwan Lim , Jung-Hyun Lim , Jung-Mi Han , Jun-Ho Lee
发明人： Seong-Taeg Nou , Hyeon-Su Kim , Chang-Hwan Lim , Jung-Hyun Lim , Jung-Mi Han , Jun-Ho Lee
IPC分类号： G06F7/00
CPC分类号： B60W10/06 , B60W10/11 , B60W10/184 , B60W30/16
摘要： Disclosed herein is a technology for controlling speed of a car. More specifically, the invention relates to a speed controller for a car using telematics, the controller comprising a sensor unit to detect the speed of the car, the distance from the car to an object in front, and the operating status of a brake pedal and an accelerator pedal, a telematics system to output a signal to control the travel speed of the car and a gear shifting signal, when the speed of the car and the distance from the car to the object in front exceeds a preset range of an approaching distance, a speed regulation system to maintain the travel speed of the car within a speed limit by controlling an accelerator pedal and a brake pedal control unit, and an automatic transmission system to set a gear shifting level by controlling a gear shifting lever control unit.
摘要翻译：这里公开了一种用于控制汽车的速度的技术。更具体地，本发明涉及一种使用远程信息处理的汽车的速度控制器，该控制器包括用于检测轿厢的速度，从轿厢到前方的物体的距离以及制动踏板的操作状态的传感器单元加速器踏板，远程信息处理系统，用于输出信号以控制轿厢的行驶速度和换档信号，当轿厢的速度和从轿厢到前方的物体的距离超过接近的距离的预设范围时，通过控制加速器踏板和制动踏板控制单元，通过控制变速杆控制单元来设定变速级别的自动变速系统，用于通过控制加速器踏板和制动踏板控制单元来将轿厢的行驶速度保持在速度限制内的调速系统。

22. 发明申请

US20060239464A1 Stereophonic sound reproduction system for compensating low frequency signal and method thereof 有权
标题翻译：用于补偿低频信号的立体声声音再现系统及其方法
公开(公告)号：US20060239464A1
公开(公告)日：2006-10-26
申请号：US11394467
申请日：2006-03-30
申请人： Jun-Ho Lee , Dae Hee Youn , Young Cheol Park , Tae Ik Kang , Jeong-Tae Kim
发明人： Jun-Ho Lee , Dae Hee Youn , Young Cheol Park , Tae Ik Kang , Jeong-Tae Kim
IPC分类号： H04R5/00
CPC分类号： H04R5/04
摘要： A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a stereophonic sound effect.
摘要翻译：一种用于补偿低频信号的立体声再现系统及其方法，其中用于补偿在输入的输入的左和右信号的串扰消除时被衰减的低频信号的单分量信号是使用左和右右信号，与第一左右信号之间的功率差值的绝对值成反比的左右补偿增益，根据左右补偿增益来控制计算出的单分量信号的幅度，之后当去除串扰时，具有受控幅度的单分量信号被加到左和右信号中，由此除去串扰的左和右信号并将单分量信号相加到左和右信号通过左和右扬声器输出到从而防止原始立体声的低频信号失真声音保持立体声效果。

23. 发明授权

US06657694B2 In-plane switching LCD device having slanted corner portions 有权
标题翻译：具有倾斜角部的平面内切换LCD装置
公开(公告)号：US06657694B2
公开(公告)日：2003-12-02
申请号：US09974842
申请日：2001-10-12
申请人： Doo-Hyun Ko , Jun-Ho Lee
发明人： Doo-Hyun Ko , Jun-Ho Lee
IPC分类号： G02F11343
CPC分类号： G02F1/134363 , G02F2201/128
摘要： A structure for an IPS LCD device, includes a plurality of common electrodes disposed over a pixel region of a substrate, a common line coupled with the plurality of common electrodes, a plurality of pixel electrodes on the pixel region, the plurality of pixel electrodes and common electrodes being arranged in an alternating manner with a predeterminned interval between adjacent common and pixel electrodes, and a first pixel connecting line coupled with the plurality of pixel electrodes and overlapping the common line, wherein a first corner portion where one of the pixel electrodes meets the first pixel connecting line is slanted with respect to that pixel electrode.
摘要翻译：一种用于IPS LCD器件的结构，包括设置在衬底的像素区域上的多个公共电极，与多个公共电极耦合的公共线，像素区域上的多个像素电极，多个像素电极和公共电极以相邻的公共和像素电极之间的预定间隔交替布置，以及与多个像素电极耦合并与公共线重叠的第一像素连接线，其中一个像素电极相遇的第一角部第一像素连接线相对于该像素电极倾斜。

24. 发明授权

US06387340B1 Manufacturing method for lithium hexafluoro phosphate 有权
标题翻译：六氟磷酸锂的制备方法
公开(公告)号：US06387340B1
公开(公告)日：2002-05-14
申请号：US09475074
申请日：1999-12-29
申请人： Doo-Chan Na , Byung-Won Woo , Soon-Hong Park , Jun-Ho Lee
发明人： Doo-Chan Na , Byung-Won Woo , Soon-Hong Park , Jun-Ho Lee
IPC分类号： C01B2510
CPC分类号： H01M10/0525 , C01D15/005 , H01M10/0568
摘要： A method of preparing lithium hexafluoro phosphate (LiPF6) using phosphorous pentachloride (PCl5), lithium chloride (LiCl), and hydrogen fluoride (HF) as raw materials. The method includes the steps of: (a) reacting the phosphorous pentafluoride with the hydrogen fluoride to prepare phosphorous pentafluoride (PF5), and (b) reacting the phosphorous pentafluoride with the lithium chloride in a hydrogen fluoride to prepare the lithium hexafluoro phosphate. Also, in this method, anhydrous hydrogen fluoride, from which moisture was removed by treating with F2 gas, is used in the steps (a) and (b), and the step (b) further comprises contacting the reaction system of the step (b) with F2 gas. Accordingly, as the method adopts relatively cheap raw materials, such as PCl5, LiCl and the like, while a highly pure F2 obtained by an electrolysis is used in the reaction system, it has an advantage in that it enables lithium hexafluoro phosphate (LiPF6) to be prepared at a high yield and purity.
摘要翻译：以五氯化磷（PCl5），氯化锂（LiCl）和氟化氢（HF）为原料制备六氟磷酸锂（LiPF 6）的方法。该方法包括以下步骤：（a）使五氟化磷与氟化氢反应制备五氟化磷（PF5），和（b）使氟化氢中的五氟化磷与氯化锂反应以制备六氟磷酸锂。此外，在该方法中，在步骤（a）和（b）中使用通过用F2气体处理除去水分的无水氟化氢，并且步骤（b）还包括使步骤 b）用F2气。因此，由于该方法采用比较便宜的原料，例如PCl5，LiCl等，而在反应体系中使用通过电解获得的高纯度的F2，其优点在于能够使六氟磷酸锂（LiPF 6）以高产率和纯度制备。

25. 发明授权

US08815489B2 Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film 有权
标题翻译：正型感光性树脂组合物，使用其制备的感光性树脂膜和包含感光性树脂膜的半导体装置
公开(公告)号：US08815489B2
公开(公告)日：2014-08-26
申请号：US13590330
申请日：2012-08-21
申请人： Ji-Young Jeong , Jin-Young Lee , Jong-Hwa Lee , Hyun-Yong Cho , Sang-Soo Kim , Eun-Kyung Yoon , Jun-Ho Lee , Myoung-Hwan Cha , Eun-Ha Hwang
发明人： Ji-Young Jeong , Jin-Young Lee , Jong-Hwa Lee , Hyun-Yong Cho , Sang-Soo Kim , Eun-Kyung Yoon , Jun-Ho Lee , Myoung-Hwan Cha , Eun-Ha Hwang
IPC分类号： G03F7/023
CPC分类号： G03F7/0236 , G03F7/0233 , G03F7/0751 , H01L23/293 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a positive photosensitive resin composition that includes (A) a polybenzoxazole precursor including a first polybenzoxazole precursor including a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2, and having a thermally polymerizable functional group at at least one of the terminal end; (B) a dissolution controlling agent including a novolac resin including a repeating unit represented by the following Chemical Formula 4; (C) a photosensitive diazoquinone compound; (D) a silane compound; (E) an acid generator; and (F) a solvent, a photosensitive resin film prepared using the same, and a semiconductor device including the photosensitive resin film.
摘要翻译：公开了一种正型感光性树脂组合物，其包含（A）包含第一聚苯并恶唑前体的聚苯并恶唑前体，其包含由以下化学式1表示的重复单元和由以下化学式2表示的重复单元，并且具有热聚合性官能团在终端中的至少一个; （B）包含由以下化学式4表示的重复单元的酚醛清漆树脂的溶解控制剂; （C）光敏重氮醌化合物; （D）硅烷化合物; （E）酸产生剂; 和（F）溶剂，使用其制备的感光性树脂膜和包含感光性树脂膜的半导体装置。

26. 发明授权

US08310062B2 Stacked semiconductor package 有权
标题翻译：堆叠半导体封装
公开(公告)号：US08310062B2
公开(公告)日：2012-11-13
申请号：US12346429
申请日：2008-12-30
申请人： Jun-Ho Lee , Hyung-Dong Lee , Hyun-Seok Kim
发明人： Jun-Ho Lee , Hyung-Dong Lee , Hyun-Seok Kim
IPC分类号： H01L23/552 , H01L23/02
CPC分类号： H01L23/552 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/32145 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/00012 , H01L2224/32225 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor package includes a wire board, a plurality of semiconductor chips configured to be stacked over the wire board and to be electrically coupled with the wire board, and at least one shielding unit configured to be formed between the plurality of semiconductor chips and to be maintained at a predetermined voltage.
摘要翻译：一种半导体封装，包括线路板，多个半导体芯片，被配置为堆叠在线路板上并与线路板电连接;以及至少一个屏蔽单元，被配置为形成在所述多个半导体芯片之间，保持在预定电压。

27. 发明申请

US20120064641A1 METHOD OF FABRICATING ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF REPAIRING THE SAME 有权
标题翻译：制造有机电致发光器件的阵列基板的方法及其修复方法
公开(公告)号：US20120064641A1
公开(公告)日：2012-03-15
申请号：US13153789
申请日：2011-06-06
申请人： Mi-Youn Yang , Jun-Ho Lee , Seung-Hyun Cho
发明人： Mi-Youn Yang , Jun-Ho Lee , Seung-Hyun Cho
IPC分类号： H01L33/00
CPC分类号： H01L27/1259 , H01L27/3244 , H01L2251/568
摘要： A method of fabricating an organic electroluminescent device (OELD) according to the present invention has steps of repairing a pixel region by irradiating a laser on a drain contact hole of a passivation layer in a pixel region in need of the repair; and disabling the connection between an organic electroluminescent diode and a drain electrode of a driving thin film transistor (TFT), where the pixel region of the OELD has i) the driving TFT comprising the drain electrode, ii) the passivation layer covering the driving TFT, while comprising the drain contact hole exposing the drain electrode of the driving TFT, and iii) the organic electroluminescent diode connected to the drain electrode of the driving TFT via the drain contact hole.
摘要翻译：根据本发明的制造有机电致发光器件（OELD）的方法具有通过在需要修复的像素区域中的钝化层的漏极接触孔上照射激光来修复像素区域的步骤; 以及禁止驱动薄膜晶体管（TFT）的有机电致发光二极管和漏电极之间的连接，其中OELD的像素区域具有i）包括漏电极的驱动TFT，ii）覆盖驱动TFT的钝化层同时包括暴露驱动TFT的漏电极的漏极接触孔，以及iii）经由漏极接触孔连接到驱动TFT的漏电极的有机电致发光二极管。

28. 发明授权

US08120416B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08120416B2
公开(公告)日：2012-02-21
申请号：US12166085
申请日：2008-07-01
申请人： Kwan-Weon Kim , Jun-Ho Lee , Kun-Woo Park , Chang-Kyu Choi , Yong-Ju Kim , Sung-Woo Han , Jun-Woo Lee
发明人： Kwan-Weon Kim , Jun-Ho Lee , Kun-Woo Park , Chang-Kyu Choi , Yong-Ju Kim , Sung-Woo Han , Jun-Woo Lee
IPC分类号： H04B1/10
CPC分类号： H03K19/00369
摘要： A semiconductor integrated circuit can include a first voltage pad, a second voltage pad, and a voltage stabilizing unit that is connected between the first voltage pad and the second voltage pad. The first voltage pad can be connected to a first internal circuit, and the second voltage pad can be connected to a second internal circuit.
摘要翻译：半导体集成电路可以包括连接在第一电压焊盘和第二电压焊盘之间的第一电压焊盘，第二电压焊盘和稳压单元。第一电压焊盘可以连接到第一内部电路，并且第二电压焊盘可以连接到第二内部电路。

29. 发明申请

US20100197089A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
标题翻译：用金属半导体复合源/漏极接触区制造半导体器件的方法
公开(公告)号：US20100197089A1
公开(公告)日：2010-08-05
申请号：US12699491
申请日：2010-02-03
申请人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
发明人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/28525 , H01L21/2855 , H01L21/32053 , H01L21/76814 , H01L21/76838 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L21/823871 , H01L23/53238 , H01L23/53266 , H01L29/665 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.
摘要翻译：制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。在晶体管上形成绝缘层并图案化以暴露源/漏区域。在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。在半导体源层上形成金属源层。进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。金属源层可以包括金属层和金属氮化物阻挡层。

30. 发明申请

US20100164076A1 STACKED SEMICONDUCTOR PACKAGE 有权
标题翻译：堆叠式半导体封装
公开(公告)号：US20100164076A1
公开(公告)日：2010-07-01
申请号：US12346429
申请日：2008-12-30
申请人： Jun-Ho Lee , Hyung-Dong Lee , Hyun-Seok Kim
发明人： Jun-Ho Lee , Hyung-Dong Lee , Hyun-Seok Kim
IPC分类号： H01L23/552 , H01L23/02
CPC分类号： H01L23/552 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/32145 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2924/00012 , H01L2224/32225 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor package includes a wire board, a plurality of semiconductor chips configured to be stacked over the wire board and to be electrically coupled with the wire board, and at least one shielding unit configured to be formed between the plurality of semiconductor chips and to be maintained at a predetermined voltage.
摘要翻译：一种半导体封装，包括线路板，多个半导体芯片，被配置为堆叠在线路板上并与线路板电连接;以及至少一个屏蔽单元，被配置为形成在所述多个半导体芯片之间，保持在预定电压。

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