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    • 27. 发明授权
    • Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same
    • 具有氮结合有源区的半导体器件及其制造方法
    • US07547951B2
    • 2009-06-16
    • US11396702
    • 2006-04-04
    • Ha-Jin LimJong-Ho LeeHyung-Suk JungYun Seok KimMin Joo Kim
    • Ha-Jin LimJong-Ho LeeHyung-Suk JungYun Seok KimMin Joo Kim
    • H01L29/78
    • H01L21/823807H01L21/823857
    • A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.
    • 半导体器件可以包括具有第一区域和第二区域的半导体衬底。 可以在第一区域内形成含氮的有源区。 可以在引入氮的有源区上形成第一栅电极。 第一栅极电介质层可插入在引入氮的有源区和第一栅电极之间。 第一栅介质层可以包括第一介电层和第二介电层。 第二电介质层可以是含氮介电层。 第二栅极电极可以形成在第二区域上。 可以在第二区域和第二栅电极之间插入第二栅极电介质层。 第一栅极介电层可以具有与第二栅极介电层相同或基本相同的厚度,并且含氮介电层可以与引入氮的有源区接触。