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    • 21. 发明申请
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US20070114540A1
    • 2007-05-24
    • US11600870
    • 2006-11-17
    • Seong LeeKyeong MinSoo KimMin Kim
    • Seong LeeKyeong MinSoo KimMin Kim
    • H01L33/00
    • H01L33/08H01L33/06H01L33/32
    • Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.
    • 本文公开了一种氮化物半导体发光器件,其包括发射不同波长的光的多个有源层。 该器件包括p型和n型氮化物层,以及顺序堆叠在p型和n型氮化物层之间以发射具有不同波长的光的多个有源层。 有源层至少包括发射第一波长光的第一有源层和发射波长比第一波长光长的第二波长光的第二有源层。 第一和第二有源层都由交替布置的至少一个量子阱层和量子势垒层构成,并且第一有源层设置成比第二有源层更靠近p型氮化物层。 第一有源层的量子阱层的数量小于第二有源层的量子阱层的数量。
    • 22. 发明申请
    • Laser induced thermal imaging apparatus and laser induced thermal imaging method
    • 激光诱导热成像设备和激光诱导热成像方法
    • US20070103920A1
    • 2007-05-10
    • US11512991
    • 2006-08-28
    • Sok NohMu KimSeong LeeSun KimJin SeongMyung SongSang Lee
    • Sok NohMu KimSeong LeeSun KimJin SeongMyung SongSang Lee
    • B60Q1/124
    • B41J2/325H01L51/0013
    • A laser induced thermal imaging apparatus for imaging an imaging layer of a donor film on an acceptor substrate. The laser induced thermal imaging apparatus includes: a substrate stage having an electromagnet, and adapted to receive an acceptor substrate having a pixel area of the organic light emitting device and a donor film including the organic light emitting layer to be imaged on the pixel area; a laser oscillator for irradiating a laser on the donor film; a contact frame adapted to be located between the substrate stage and the laser oscillator and including an opening portion of a pattern corresponding to a part to be imaged of the donor film and a permanent magnet for forming a magnetic force with the substrate stage; and a contact frame moving mechanism for moving the contact frame toward the substrate stage.
    • 激光诱导热成像装置,用于对受主衬底上的供体膜的成像层进行成像。 激光感应热成像装置包括:具有电磁体的衬底台,并且适于接收具有有机发光器件的像素面积的受主衬底和包括要在像素区域上成像的有机发光层的施主膜; 用于在供体膜上照射激光的激光振荡器; 接触框架,其适于位于所述衬底台和所述激光振荡器之间,并且包括与所述供体膜的要成像的部分相对应的图案的开口部分和用于与所述衬底台形成磁力的永磁体; 以及用于将接触框架朝向基板台移动的接触框架移动机构。
    • 23. 发明申请
    • Method of making an organic light emitting display device
    • 制造有机发光显示装置的方法
    • US20070048658A1
    • 2007-03-01
    • US11511021
    • 2006-08-28
    • Tae KangJin KimMu KimSun KimNoh KwakSang LeeSeong LeeSeung LeeSok NohJin SeongMyung SongYeun SungByeong Yoo
    • Tae KangJin KimMu KimSun KimNoh KwakSang LeeSeong LeeSeung LeeSok NohJin SeongMyung SongYeun SungByeong Yoo
    • G03C8/00
    • B41M5/265B41M5/38221H01L51/0013
    • A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
    • 公开了一种激光诱导热成像(LITI)装置和使用其的电子装置的制造方法。 LITI装置包括腔室,衬底支撑件,接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生,该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料:1)中间装置和薄膜供体装置; 2)中间装置和接触框架; 3)基底支撑体和薄膜供体装置; 或4)衬底支撑件和接触框架。
    • 26. 发明申请
    • Transistor using impact ionization and method of manufacturing the same
    • 使用冲击电离的晶体管及其制造方法
    • US20060125041A1
    • 2006-06-15
    • US11296152
    • 2005-12-06
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • Jong YangIn BaekKi ImChang AhnWon ChoSeong Lee
    • H01L27/095
    • H01L29/66659H01L21/26586H01L21/28052H01L21/28202H01L29/495H01L29/518H01L29/665H01L29/66643H01L29/7835H01L29/7839
    • A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
    • 提供了使用冲击电离的晶体管及其制造方法。 栅极电介质层,栅极以及第一和第二间隔物形成在半导体衬底上。 第一杂质层与第一间隔物隔开形成,并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入,形成第二杂质层与其间的第二间隔物膨胀和重叠。 源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准,由此在半导体衬底中的源极和漏极之间限定电离区域。 源包括与电离区形成肖特基结的第一硅化物层。 漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。