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    • 28. 发明授权
    • Light emitting device and light emitting device package having the same
    • 发光器件和具有该发光器件的发光器件封装
    • US08354664B2
    • 2013-01-15
    • US13024883
    • 2011-02-10
    • Ji Hyung MoonHwan Hee JeongSang Youl LeeJune O Song
    • Ji Hyung MoonHwan Hee JeongSang Youl LeeJune O Song
    • H01L29/06
    • H01L33/58F21K9/23F21Y2105/10F21Y2113/13F21Y2115/10H01L33/0079H01L33/20H01L33/405H01L33/44H01L2224/48091H01L2924/00014
    • Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer.
    • 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层,第二导电类型半导体层和有源层的发光结构,其中第一导电类型半导体层 包括阶梯式结构,其具有比第一顶表面低的第二顶表面; 绝缘层,设置在所述发光结构的侧表面和所述第一导电类型半导体层的所述第二顶表面上; 与第一导电型半导体层电连接的电极; 第二导电型半导体层下的电极层; 以及设置在所述第二导电型半导体层的下表面的周边部分上的保护层。