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21. 发明授权

US06746273B1 High-speed serial bus power supply device 失效
标题翻译：高速串行总线供电装置
公开(公告)号：US06746273B1
公开(公告)日：2004-06-08
申请号：US10243673
申请日：2002-09-16
申请人： Wen-Tsung Liu , Hsiang-An Hsieh , Wei-Yueh Chien
发明人： Wen-Tsung Liu , Hsiang-An Hsieh , Wei-Yueh Chien
IPC分类号： H01R1100
CPC分类号： H04L12/10
摘要： The present invention discloses a high-speed serial bus power supply device to connect a 4-PIN cable receptacle and a USB interface socket on a notebook. It includes a first connector, which is a common 6-PIN cable receptacle and can be connected to an appropriate interface; a second connector, which is a 4-PIN cable plug connected to the first connector and can be inserted into the said 4-PIN cable receptacle of the notebook; and a USB plug, which is also connected to the first connector and can deliver power to the serial port through said USB interface socket which is connected to the notebook.
摘要翻译：本发明公开了一种用于连接4-pin电缆插座和笔记本电脑上的USB接口插座的高速串行总线电源装置。它包括一个第一个连接器，它是一个通用的6芯电缆插座，可以连接到适当的接口; 第二连接器，其是连接到第一连接器并可插入笔记本的所述4-pin电缆插座中的4针电缆插头; 以及USB插头，其也连接到第一连接器，并且可以通过连接到笔记本的USB接口插座向串行端口供电。

22. 发明授权

US08429332B2 Multi-channel hybrid density memory storage device and control method thereof 有权
公开(公告)号：US08429332B2
公开(公告)日：2013-04-23
申请号：US12382442
申请日：2009-03-17
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Tso-Cheng Su , Shih-Fang Hung , Tzu-Wei Fang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Tso-Cheng Su , Shih-Fang Hung , Tzu-Wei Fang , Hsiang-An Hsieh
IPC分类号： G06F13/00 , G06F13/28 , G06F11/00 , H03M13/00
CPC分类号： G06F12/0246 , G06F11/1048 , G06F2212/7208
摘要： The present invention discloses a control method of a multi-channel hybrid density memory storage device for access a user data. The storage device includes a plurality of low density memories (LDM) and high density memories (HDM). The steps of the method comprises: first, determining where the user data transmitted; then, using one of two error correction circuits which have different error correction capability to encode or decode the user data.

23. 发明授权

US08291156B2 Memory system having hybrid density memory and methods for wear-leveling management and file distribution management thereof 有权
标题翻译：具有混合密度存储器的存储器系统及其磨损均衡管理及其文件分发管理的方法
公开(公告)号：US08291156B2
公开(公告)日：2012-10-16
申请号：US13159784
申请日：2011-06-14
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7208 , G06F2212/7211 , G11C11/56 , G11C2211/5641
摘要： The present invention discloses a memory system having a hybrid density memory. The memory system includes a plurality of storage spaces whereby the storage spaces have respective levels of endurance and each storage space has a plurality of blocks and pre-determined weighting factors corresponding to the levels of endurance of the storage spaces. After executing a command of erasing a specific block, the system records the erase in accordance with the weighting factor of the storage space to which the specific block belongs. Whereby, the erase counts of all the blocks of different storage spaces are able to reach respective levels of endurance as simultaneously as possible.
摘要翻译：本发明公开了一种具有混合密度存储器的存储器系统。存储器系统包括多个存储空间，由此存储空间具有相应的耐久级别，并且每个存储空间具有多个块和与存储空间的耐久水平相对应的预定加权因子。在执行擦除特定块的命令之后，系统根据特定块所属的存储空间的权重因子记录擦除。因此，不同存储空间的所有块的擦除计数能够尽可能同时达到相应的耐久水平。

24. 发明授权

US08015346B2 Memory system having hybrid density memory and methods for wear-leveling management and file distribution management thereof 有权
标题翻译：具有混合密度存储器的存储器系统及其磨损均衡管理及其文件分发管理的方法
公开(公告)号：US08015346B2
公开(公告)日：2011-09-06
申请号：US12050567
申请日：2008-03-18
申请人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Chuan-Sheng Lin , Hui-Neng Chang , Hsiang-An Hsieh
IPC分类号： G06F13/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7208 , G06F2212/7211 , G11C11/56 , G11C2211/5641
摘要： The present invention discloses a memory system having a hybrid density memory. The memory system includes a plurality of storage spaces whereby the storage spaces have respective levels of endurance and each storage space has a plurality of blocks and pre-determined weighting factors corresponding to the levels of endurance of the storage spaces. After executing a command of erasing a specific block, the system records the erase in accordance with the weighting factor of the storage space to which the specific block belongs. Whereby, the erase counts of all the blocks of different storage spaces are able to reach respective levels of endurance as simultaneously as possible.
摘要翻译：本发明公开了一种具有混合密度存储器的存储器系统。存储器系统包括多个存储空间，由此存储空间具有相应的耐久级别，并且每个存储空间具有多个块和与存储空间的耐久水平相对应的预定加权因子。在执行擦除特定块的命令之后，系统根据特定块所属的存储空间的权重因子记录擦除。因此，不同存储空间的所有块的擦除计数能够尽可能同时达到相应的耐久水平。

25. 发明申请

US20100082883A1 Hybrid density memory system and control method thereof 审中-公开
标题翻译：混合密度记忆系统及其控制方法
公开(公告)号：US20100082883A1
公开(公告)日：2010-04-01
申请号：US12379698
申请日：2009-02-26
申请人： Ming-Dar Chen , Tso-Cheng Su , Shih-Fang Hung , Tzu-Wei Fang , Hsiang-An Hsieh
发明人： Ming-Dar Chen , Tso-Cheng Su , Shih-Fang Hung , Tzu-Wei Fang , Hsiang-An Hsieh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202 , G11C2211/5641
摘要： A control method of a memory system for accessing an updated data between a host and the memory system is provided. The host has storage space which is divided into a plurality of logical segments to access the data. The system includes a high density memory and a low density memory, and the high density memory includes a plurality of physical segments to access the data. The control method includes the following steps: first, providing a LDM table in the memory system to indicate the allocation information of the low density memory; finally, deciding where the data is written to is according to its properties and the LDM table.
摘要翻译：提供了一种用于访问主机和存储器系统之间的更新数据的存储器系统的控制方法。主机具有被分成多个逻辑段以存取数据的存储空间。该系统包括高密度存储器和低密度存储器，并且高密度存储器包括用于访问数据的多个物理段。该控制方法包括以下步骤：首先，在存储器系统中提供LDM表以指示低密度存储器的分配信息; 最后，根据其属性和LDM表来决定数据写入的位置。

26. 发明申请

US20080160791A1 Memory card with a slim USB connector 审中-公开
标题翻译：带有超薄USB连接器的存储卡
公开(公告)号：US20080160791A1
公开(公告)日：2008-07-03
申请号：US11723559
申请日：2007-03-21
申请人： Hsiang-An Hsieh
发明人： Hsiang-An Hsieh
IPC分类号： H01R12/00
CPC分类号： H01R13/5213 , G06K19/07732
摘要： A memory card with a slim USB connector includes a memory card and a cover. The memory card has a memory card body and a slim USB connector located on one end of the memory card body. The memory card has at least one concave portion. The cover covers the slim USB connector. There is a convex portion located on the cover that corresponds to the concave portion. The concave portion and the convex portion are embedded into each other when the memory card is connected with the cover. Thereby, the cover is firmly fastened on the memory card body and the slim USB connector. The problem of the cover easily coming off from the slim USB connector is avoided.
摘要翻译：具有细长USB连接器的存储卡包括存储卡和盖。存储卡具有存储卡主体和位于存储卡主体一端的细长USB连接器。存储卡具有至少一个凹部。盖子覆盖了超薄的USB连接器。位于盖上的与凹部对应的凸部。当存储卡与盖连接时，凹部和凸部彼此嵌入。因此，盖牢固地固定在存储卡主体和细长的USB连接器上。避免了从超薄USB连接器轻松脱落的盖子的问题。

27. 发明授权

US07317632B2 Non-volatile memory storage device and controller therefor 有权
标题翻译：非易失性存储器及其控制器
公开(公告)号：US07317632B2
公开(公告)日：2008-01-08
申请号：US11341682
申请日：2006-01-30
申请人： Li-Pai Chen , Ming-Dar Chen , Hsiang-An Hsieh , Yen-Hsin Liu
发明人： Li-Pai Chen , Ming-Dar Chen , Hsiang-An Hsieh , Yen-Hsin Liu
IPC分类号： G11C11/34 , G11C5/34
CPC分类号： G11C16/30
摘要： A non-volatile memory storage device with functions of boosting supply voltage and signal level can adopt a non-volatile memory having an operating voltage higher than the supply voltage provided by the host device as a storage medium. The non-volatile memory storage device includes a supply voltage booster, a non-volatile memory storage unit and a controller. The supply voltage booster boosts the lower supply voltage provided by the host device up to the higher operating voltage of the non-volatile memory. The controller adjusts the interface signal to a proper interface signal level by cooperating with the supply voltage and the operating voltage so as to avoid the interface from damage owing to an over high signal level or avoid the non-volatile memory unit from not correctly receiving signal due to an over low signal level.
摘要翻译：具有升高电源电压和信号电平功能的非易失性存储器装置可以采用具有比由主机设备提供的电源电压高的工作电压作为存储介质的非易失性存储器。非易失性存储器存储装置包括电源电压升压器，非易失性存储器存储单元和控制器。电源电压升压器将主机设备提供的较低电源电压升高到非易失性存储器的较高工作电压。控制器通过与电源电压和工作电压协调来将接口信号调整到适当的接口信号电平，以避免接口因过高信号电平而造成损坏，或避免非易失性存储单元不能正确接收信号由于信号电平过低。

28. 发明申请

US20070266219A1 Storage control apparatus capable of analyzing volume information and a control method thereof 失效
标题翻译：能够分析体积信息的存储控制装置及其控制方法
公开(公告)号：US20070266219A1
公开(公告)日：2007-11-15
申请号：US11878326
申请日：2007-07-24
申请人： Hsiang-An Hsieh , Chia-Li Chen
发明人： Hsiang-An Hsieh , Chia-Li Chen
IPC分类号： G06F12/00 , G06F13/00
CPC分类号： G11B20/00086 , G06F3/0605 , G06F3/0632 , G06F3/0676 , G11B20/10
摘要： A storage control apparatus capable of analyzing volume information and a control method thereof is provided. The present storage device controller comprises a volume information analysis module, volume information memory, a display device interface and a power regulation circuit to display the volume information on the display device through the display device interface so that a user can independently read the storage medium and analyze the volume information, regardless of whether it is connected or disconnected.
摘要翻译：提供了能够分析卷信息的存储控制装置及其控制方法。本存储装置控制器包括：音量信息分析模块，音量信息存储器，显示装置接口和功率调节电路，用于通过显示装置接口在显示装置上显示音量信息，使得用户可以独立地读取存储介质和分析卷信息，无论是连接还是断开连接。

29. 发明申请

US20070259567A1 Multiple mode micro memory card connector 审中-公开
标题翻译：多模微型存储卡连接器
公开(公告)号：US20070259567A1
公开(公告)日：2007-11-08
申请号：US11382268
申请日：2006-05-08
申请人： Li-Pai Chen , Ming-Dar Chen , Hsiang-An Hsieh , Jui-Bin Hwan
发明人： Li-Pai Chen , Ming-Dar Chen , Hsiang-An Hsieh , Jui-Bin Hwan
IPC分类号： H01R33/00
CPC分类号： G06K19/077 , G06K19/07739
摘要： A multiple mode micro memory card connector includes a housing and a cavity formed in the housing for receiving a micro memory card. The cavity includes a first end having a shape conforming to a first device connection standard for receiving a micro memory card compatible with the first device connection standard, and a second end formed at an opposite end of the cavity from the first end, the second end having a shape conforming to a second device connection standard for receiving a micro memory card compatible with the second device connection standard.
摘要翻译：多模微存储卡连接器包括壳体和形成在壳体中的用于接收微存储卡的空腔。空腔包括具有符合第一设备连接标准的形状的第一端，用于接收与第一设备连接标准兼容的微存储卡，以及形成在空腔的与第一端相反的一端的第二端，第二端具有符合用于接收与第二设备连接标准兼容的微存储卡的第二设备连接标准的形状。

30. 发明申请

US20070257116A1 Interface detection method of a multiple mode micro memory card 审中-公开
标题翻译：多模微型存储卡的接口检测方法
公开(公告)号：US20070257116A1
公开(公告)日：2007-11-08
申请号：US11381740
申请日：2006-05-04
申请人： Hsiang-An Hsieh
发明人： Hsiang-An Hsieh
IPC分类号： G06K19/06
CPC分类号： G06K19/07 , G06K19/07732
摘要： A multiple mode micro memory card includes a housing having a first end and a second end; a memory for storing data; first and second sets of contact pads formed on the first end for sending and receiving data and control signals; and a controller electrically connected to the first and second sets of contact pads for receiving external signals through the first and second sets of contact pads, wherein the controller controls the multiple mode micro memory card to operate in a first mode when receiving external signals through only the first set of contact pads, controls the multiple mode micro memory card to operate in a second mode when receiving external signals through only the second set of contact pads, and controls the multiple mode micro memory card to operate in a third mode when receiving external signals through both the first and second sets of contact pads.
摘要翻译：多模微型存储卡包括具有第一端和第二端的外壳; 用于存储数据的存储器; 在第一端形成的用于发送和接收数据和控制信号的第一和第二组接触焊盘; 以及控制器，电连接到第一和第二组接触焊盘，用于通过第一和第二组接触焊盘接收外部信号，其中当通过仅接收外部信号时，控制器控制多模微型存储卡以第一模式操作第一组接触焊盘，当通过仅第二组接触焊盘接收外部信号时，控制多模微型存储卡在第二模式下操作，并且当接收外部时控制多模微型存储卡在第三模式中操作信号通过第一组和第二组接触垫。

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