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21. 发明授权

US08753804B2 Line width roughness improvement with noble gas plasma 有权
标题翻译：惰性气体等离子体的线宽粗糙度改善
公开(公告)号：US08753804B2
公开(公告)日：2014-06-17
申请号：US12921753
申请日：2009-02-18
申请人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
发明人： Shih-Yuan Cheng , Shenjian Liu , Youn Gi Hong , Qian Fu
IPC分类号： G03F7/20
CPC分类号： H01L21/3065 , H01L21/0271 , H01L21/308 , H01L21/3081 , H01L21/31144 , H01L21/67069
摘要： A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.
摘要翻译：用于形成光致抗蚀剂掩模的方法可以包括向具有基底的真空室提供紫外线（UV）产生气体，使产生紫外线的气体离子化以产生UV射线以照射基底，并通过光刻胶将特征蚀刻到基底中面具。

22. 发明授权

US08440573B2 Method and apparatus for pattern collapse free wet processing of semiconductor devices 有权
标题翻译：用于半导体器件的图形无塌陷湿法处理的方法和装置
公开(公告)号：US08440573B2
公开(公告)日：2013-05-14
申请号：US12694134
申请日：2010-01-26
申请人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
发明人： Katrina Mikhaylichenko , Denis Syomin , Qian Fu , Glenn W. Gale , Shenjian Liu , Mark H. Wilcoxson
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/0206 , H01L21/02068 , H01L21/3081 , H01L21/31111
摘要： A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.
摘要翻译：提供了一种用于处理在制造半导体器件中使用的晶片的方法。该方法可以包括在晶片上形成高纵横比特征，其后是湿加工和干燥。在干燥期间，可能发生图案塌陷。可以修复该图案崩溃以允许对晶片进行额外的处理。在某些情况下，可以通过蚀刻来修复图案塌陷，其中蚀刻破坏在图案崩溃期间可能形成的键。

23. 发明授权

US08124538B2 Selective etch of high-k dielectric material 有权
标题翻译：高k介电材料的选择性蚀刻
公开(公告)号：US08124538B2
公开(公告)日：2012-02-28
申请号：US12422108
申请日：2009-04-10
申请人： In Deog Bae , Qian Fu , Wonchul Lee , Shenjian Liu
发明人： In Deog Bae , Qian Fu , Wonchul Lee , Shenjian Liu
IPC分类号： H01L21/302
CPC分类号： H01L21/31122
摘要： A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl3. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.
摘要翻译：提供了一种相对于多晶硅材料选择性地蚀刻高k电介质层的方法。通过Ar溅射部分去除高k电介质层，然后使用包含BCl 3的蚀刻气体蚀刻高k电介质层。高k电介质层和多晶硅材料可以形成在衬底上。为了部分去除高k电介质层，将含有Ar的溅射气体设置在其中放置基板的蚀刻室中，从溅射气体产生等离子体，然后停止溅射气体。为了蚀刻高k电介质层，蚀刻气体被提供到蚀刻室中，从蚀刻气体产生等离子体，然后停止蚀刻气体。

24. 发明申请

US20090130855A1 Phase change alloy etch 有权
标题翻译：相变合金蚀刻
公开(公告)号：US20090130855A1
公开(公告)日：2009-05-21
申请号：US11479303
申请日：2006-06-29
申请人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
发明人： Qian Fu , Shenjian Liu , Linda Fung-Ming Lee
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J2237/3341 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.
摘要翻译：提供了一种形成装置的方法。提供了相变层。通过提供包含含溴化合物的蚀刻气体并从蚀刻气体形成等离子体来蚀刻相变层。相变层是可以被电流加热然后冷却的材料，根据材料的冷却速度而形成非晶材料或结晶材料。此外，无定形材料具有比结晶材料至少几倍的电阻。

25. 发明申请

US20060273072A1 Tungsten silicide etch process with reduced etch rate micro-loading 有权
标题翻译：硅化钨蚀刻工艺，降低蚀刻速率微加载
公开(公告)号：US20060273072A1
公开(公告)日：2006-12-07
申请号：US11440163
申请日：2006-05-23
申请人： Sok Tan , Shenjian Liu , Harmeet Singh , Sam Lee , Linda Lee
发明人： Sok Tan , Shenjian Liu , Harmeet Singh , Sam Lee , Linda Lee
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/28061 , H01L21/32137
摘要： The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.
摘要翻译：实施例提供了一种改进的硅化钨蚀刻工艺，具有降低的蚀刻速率微负载效应。在一个实施例中，提供了蚀刻形成在基板上的层的方法。该方法包括将衬底提供到等离子体处理室中，所述衬底具有形成在其上的金属硅化物层和限定在金属硅化物层上的图案化掩模。该方法还包括向等离子体处理室供应含氟气体，含氯气体，含氮气体和含氧气体的蚀刻气体混合物，其中含氮气体与含氟气体在约5至约15之间。此外，该方法包括使用所提供的蚀刻气体混合物在等离子体处理室中产生等离子体，以在未被图案化掩模覆盖的区域中蚀刻金属硅化物层，掩模，其限定致密区域和隔离区域，其中所产生的等离子体被配置为以降低的蚀刻速率微负载去除密集区域和隔离区域中的金属硅化物层。

26. 发明授权

US06774045B1 Residual halogen reduction with microwave stripper 有权
标题翻译：用微波剥离器进行残余卤素还原
公开(公告)号：US06774045B1
公开(公告)日：2004-08-10
申请号：US10189756
申请日：2002-07-02
申请人： Shenjian Liu , Gregory James Goldspring
发明人： Shenjian Liu , Gregory James Goldspring
IPC分类号： H01L21302
CPC分类号： H01L21/02071
摘要： This invention relates to a method for reducing halogen gasses and byproducts in post-etch applications. The method consists of exposing the substrate to O2/N2 plasma and water vapor in a process chamber.
摘要翻译：本发明涉及在蚀刻后应用中减少卤素气体和副产物的方法。该方法包括将基底暴露于处理室中的O 2 / N 2等离子体和水蒸汽。

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