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21. 发明授权

US5329413A Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions 失效
标题翻译：磁阻传感器与两个端部区域的高矫顽力膜磁耦合
公开(公告)号：US5329413A
公开(公告)日：1994-07-12
申请号：US712
申请日：1993-01-05
申请人： Reiko Kondoh , Hitoshi Iwasaki , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohta
发明人： Reiko Kondoh , Hitoshi Iwasaki , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohta
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/398 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of the magnetoresistance layer, and an electrical conductive layer formed on the magnetoresistance layer or the magnetization stabilizing layer. The sensor is characterized in that the magnetoresistance layer and the magnetization stabilizing layer are stacked on each other such that the layers are magnetically coupled to each other at their two end regions with an exchange coupling force higher than that at the remaining region. With this arrangement, there is provided a magnetoresistance sensor having high sensitivity, which can apply a desired bias magnetic field to the MR layer while preventing the bias magnetic field from being disturbed by a magnetic field from a magnetic recording medium or the like.
摘要翻译：本发明的磁阻传感器被设计成基于磁阻层的电阻的变化来检测磁场，并且包括基板，磁阻层，用于稳定磁阻层的磁化的磁化稳定层和形成在磁阻层或磁化稳定层上的导电层。该传感器的特征在于，磁阻层和磁化稳定层彼此层叠，使得这些层在它们的两个端部区域彼此磁耦合，其交换耦合力高于剩余区域的交换耦合力。利用这种布置，提供了具有高灵敏度的磁阻传感器，其可以在防止偏磁磁场被来自磁记录介质等的磁场的干扰的同时向MR层施加期望的偏置磁场。

22. 发明授权

US5304975A Magnetoresistance effect element and magnetoresistance effect sensor 失效
标题翻译：磁阻效应元件和磁阻效应传感器
公开(公告)号：US5304975A
公开(公告)日：1994-04-19
申请号：US965073
申请日：1992-10-22
申请人： Yoshiaki Saito , Susumu Hashimoto , Koichiro Inomata , Hitoshi Iwasaki , Reiko Kondoh , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohto
发明人： Yoshiaki Saito , Susumu Hashimoto , Koichiro Inomata , Hitoshi Iwasaki , Reiko Kondoh , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohto
IPC分类号： G01R33/09 , G11B5/39 , H01L43/10 , H01L43/08 , G01R33/02
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.
摘要翻译：磁阻效应元件包括通过堆叠磁性和非磁性层以显示磁阻效应而获得的多层，以及形成在多层上的反向辅助层，以辅助磁性层的磁矩的反转。

23. 发明授权

US06256863B1 Yoke type magnetoresistance head and manufacturing method of the same 失效
标题翻译：轭型磁阻头及其制造方法
公开(公告)号：US06256863B1
公开(公告)日：2001-07-10
申请号：US08815179
申请日：1997-03-11
申请人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
发明人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
IPC分类号： G11B542
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3163 , G11B5/3903 , G11B5/3916 , G11B2005/3996 , Y10T29/49034
摘要： A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.
摘要翻译：在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。此外，至少在头部的操作期间，向磁轭和MR膜施加偏置磁场。该偏置磁场例如由电流引起的磁场提供。或者，在对磁轭进行加热处理的同时施加由电流引起的磁场。磁性各向异性在根据位置不同的方向上被引到磁轭上。这种磁各向异性限制了由磁轭引起的Barkhausen噪声。

24. 发明授权

US5576915A Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof 失效
标题翻译：具有反铁磁性子层的磁阻头插入在第一和第二自旋阀单元之间以交换其内部磁性膜
公开(公告)号：US5576915A
公开(公告)日：1996-11-19
申请号：US472487
申请日：1995-06-07
申请人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
发明人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistive head includes an antiferromagnetic portion interposed between first and second spin-valve units. Sense current supply directions through the first and second spin-valve units are perpendicular to a head facing surface of a magnetic recording medium. The first spin-valve unit is formed of a first inner magnetic film, a first outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the first inner magnetic film and the first outer magnetic film. The second spin-valve unit is formed of a second inner magnetic film, a second outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the second inner magnetic film and the second outer magnetic film. The antiferromagnetic portion is formed of a first antiferromagnetic sublayer and a second antiferromagnetic sublayer laminated on the first antiferromagnetic sublayer. The first antiferromagnetic sublayer is in contact with the first inner magnetic film to apply a first exchange bias magnetic field to the first inner magnetic film in a direction perpendicular to the head facing surface of the magnetic recording medium. The second antiferromagnetic sublayer is in contact with the second inner magnetic film to apply a second exchange bias magnetic field to the second inner magnetic film in a direction perpendicular to the surface of the magnetic recording medium. The second exchange bias magnetic field has a polarity opposite to that of the first exchange bias magnetic field.
摘要翻译：磁阻头包括介于第一和第二自旋阀单元之间的反铁磁部分。通过第一和第二自旋阀单元的感测电流供给方向垂直于磁记录介质的朝向头部的表面。第一自旋阀单元由第一内部磁性膜，第一外部磁性膜和介于第一内部磁性膜和第一外部磁性膜直接物理接触之间的非磁性膜形成。第二自旋阀单元由第二内部磁性膜，第二外部磁性膜和介于第二内部磁性膜和第二外部磁性膜直接物理接触之间的非磁性膜形成。反铁磁部分由层叠在第一反铁磁性子层上的第一反铁磁性子层和第二反铁磁性层构成。第一反铁磁性子层与第一内部磁性膜接触，以在垂直于磁记录介质的朝向磁头的表面的方向上向第一内部磁性膜施加第一交换偏置磁场。第二反铁磁子层与第二内磁性膜接触，以在垂直于磁记录介质的表面的方向上向第二内磁膜施加第二交换偏置磁场。第二交换偏置磁场的极性与第一交换偏置磁场的极性相反。

25. 发明授权

US6111722A Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same 失效
标题翻译：具有改进的偏置膜的磁阻效应元件以及使用其的磁头和磁记录装置
公开(公告)号：US6111722A
公开(公告)日：2000-08-29
申请号：US71040
申请日：1998-05-04
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Yuichi Ohsawa
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Yuichi Ohsawa
IPC分类号： G11B5/39 , G11B5/48 , G11C11/15 , H01F10/00 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , H01L43/08 , G11B2005/3996 , G11B5/488
摘要： A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.
摘要翻译：自旋阀GMR元件包括以预定间隙设置的一对磁偏置膜和以至少两个边缘部分堆叠在一对磁偏置膜上的方式设置的自旋阀GMR膜。自旋阀GMR膜具有包含其饱和磁化强度大的含有Co的磁性层的磁性层的自由层。磁偏置膜具有由高饱和磁化磁化层和磁性硬质层构成的层叠膜。高饱和磁化层，对于磁性硬层的自由层的饱和磁化强度Msfree和Mshard的饱和磁化强度，具有满足Mshigh> / = Msfree和Mshigh> / = Mshard中的至少一个的饱和磁化强度Mshigh。根据这种偏压结构，当过度铺设结构的自旋阀GMR元件在其轨道上变窄时，可以有效地抑制巴克豪森噪声的发生。

26. 发明授权

US5585199A Magnetoresistance effect head 失效
标题翻译：磁阻效应头
公开(公告)号：US5585199A
公开(公告)日：1996-12-17
申请号：US303014
申请日：1994-09-08
申请人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
发明人： Yuzo Kamiguchi , Susumu Hashimoto , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01F10/32 , H01F1/00 , G11B21/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3281 , G11B2005/3996 , G11B5/012 , H01F10/3295 , Y10S428/928 , Y10T428/12465 , Y10T428/12535
摘要： A magnetoresistance effect head is disclosed which is provided with a spin valve film of the three-layer laminate construction comprising a pair of magnetic layers made of a Co-based alloy and a nonmagnetic intermediate layer interposed between the pair of magnetic layers. This magnetoresistance effect head satisfies the expressions, 3.ltoreq.d.sub.1 .ltoreq.7, 3.ltoreq.d.sub.2 .ltoreq.7, and 0.ltoreq. (d.sub.1 -d.sub.2)/d.sub.1 .ltoreq.0.40, wherein d.sub.1 and d.sub.2 stand for the thicknesses (nm) of the pair of magnetic layers (providing d.sub.1 .gtoreq.d.sub.2). A soft magnetic layer of high resistance is disposed contiguously to that of the pair of magnetic layers which has the direction of magnetization thereof varied by an external magnetic layer. The total thickness of this soft magnetic layer and the magnetic layer contiguous thereto is in the range of from 5 to 40 nm. In the case of a magnetoresistance effect head which is provided with a spin valve film of the five-layer laminate construction, the thicknesses (nm), d.sub.1 and d.sub.2, of the two outer magnetic layers similarly satisfy the conditions mentioned above. Further, the thickness (nm), d.sub.3, of the center magnetic layer satisfies the expression, 1.ltoreq.d.sub.3 .ltoreq.2/3d.sub.1. As a result, the magnetoresistance effect head acquires the ability to produce a large rate of change of magnetic resistance with high repeatability.
摘要翻译：公开了一种磁阻效应头，其具有三层层压结构的自旋阀膜，该三层层压结构包括一对由Co基合金制成的磁性层和介于该一对磁性层之间的非磁性中间层。该磁电阻效应头满足表达式，其中d1和d2表示为3 / = d2）。高电阻的软磁性层与具有由外部磁性层变化的磁化方向的一对磁性层的磁性层相邻设置。该软磁性层和与其相邻的磁性层的总厚度为5〜40nm的范围。在具有五层层叠结构的自旋阀膜的磁阻效应头的情况下，两个外磁层的厚度（nm），d1和d2类似地满足上述条件。此外，中心磁性层的厚度（nm），d3满足表达式1，d3，其中E 2，结果，磁阻效应头获得以高重复性产生大的磁阻变化率的能力。

27. 发明授权

US5768066A Magnetoresistive head having an antiferromagnetic layer interposed between first and second magnetoresistive elements 失效
标题翻译：具有介于第一和第二磁阻元件之间的反铁磁层的磁阻头
公开(公告)号：US5768066A
公开(公告)日：1998-06-16
申请号：US568437
申请日：1995-12-06
申请人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
发明人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistive head including a first magnetoresistive element, a second magnetoresistive element, and an antiferromagnetic layer interposed between the first and second magnetoresistive elements. The antiferromagnetic layer may be replaced by two antiferromagnetic sub layers which are formed on the outer sides of the first and second magnetoresistive elements, respectively.
摘要翻译：包括第一磁阻元件，第二磁阻元件和介于第一和第二磁阻元件之间的反铁磁层的磁阻头。反铁磁层可以由分别形成在第一和第二磁阻元件的外侧上的两个反铁磁性子层代替。

28. 发明授权

US06369992B1 Yoke-type head with magneto-resistance effect film recessed from medium facing surface and extending across magnetic gap 失效
标题翻译：具有磁阻效应膜的轭型磁头，从介质面向表面凹陷并延伸穿过磁隙
公开(公告)号：US06369992B1
公开(公告)日：2002-04-09
申请号：US08909687
申请日：1997-08-12
申请人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi , Tadahiko Kobayashi
发明人： Hiroaki Yoda , Atsuhito Sawabe , Hitoshi Iwasaki , Yuichi Ohsawa , Masashi Sahashi , Tadahiko Kobayashi
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3977 , G11B2005/3996
摘要： A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.
摘要翻译：磁阻效应头记录和再现记录的磁性材料。磁阻效应头具有连接到一对引线的磁阻效应膜。此外，具有第一和第二磁轭构件的磁轭将来自记录介质的信号磁场引导到磁阻效应膜。磁阻效应头被构造成使得第一和第二磁轭构件具有面向记录介质的表面。第一和第二磁轭构件的表面之间具有磁隙。此外，磁阻效应膜从面向介质的表面凹陷预定距离。此外，第一和第二磁轭构件几乎与从记录介质到第一磁轭构件，磁阻效应膜和第二磁轭构件的磁通流平行排列。

29. 发明授权

US08917485B2 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus 有权
标题翻译：磁阻效应元件，磁头和磁盘装置
公开(公告)号：US08917485B2
公开(公告)日：2014-12-23
申请号：US11546975
申请日：2006-10-13
申请人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
IPC分类号： G11B5/33 , G01R33/09 , G11B5/39 , G11C11/16 , H01L43/08 , H01F10/32 , B82Y25/00 , G11B5/455
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/398 , G11B5/455 , G11C11/16 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.
摘要翻译：磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。

30. 发明授权

US08331062B2 Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置和磁存储器
公开(公告)号：US08331062B2
公开(公告)日：2012-12-11
申请号：US13291743
申请日：2011-11-08
申请人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
发明人： Hiromi Fuke , Susumu Hashimoto , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/39 , H01L29/82 , H01L23/12
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F41/305 , H01L43/08
摘要： A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.
摘要翻译：磁阻效应元件包括：第一磁化层，其一个方向基本上固定磁化; 第二磁化层，其磁化根据外部磁场旋转; 中间层，其包含绝缘部分和磁性金属部分，并且设置在第一磁性层和第二磁性层之间; 以及一对电极，其在垂直于由第一磁性层，中间层和第二磁性层制成的多层膜的膜表面的方向上流动电流; 其中中间层的磁性金属部分含有非铁磁性金属。

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