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    • 24. 发明授权
    • Process for producing photovoltaic element
    • 光电元件生产工艺
    • US06261862B1
    • 2001-07-17
    • US09358930
    • 1999-07-23
    • Tadashi HoriMasahiro KanaiHirokazu OhtoshiNaoto OkadaKoichiro MoriyamaHiroshi ShimodaHiroyuki Ozaki
    • Tadashi HoriMasahiro KanaiHirokazu OhtoshiNaoto OkadaKoichiro MoriyamaHiroshi ShimodaHiroyuki Ozaki
    • H01L2100
    • H01L31/076H01L31/075H01L31/1804Y02E10/547Y02E10/548Y02P70/521
    • A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.
    • 提供了一种制造具有至少一个pin结的光电元件的工艺,以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层,通过将源材料气体引入反应室中的放电空间的生产步骤,以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中,在用于形成至少一个子层的放电产生中,与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同,或者将一个电极的电位设置为零伏。 由此,有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能,开路电压和填充因子得到改善,并且这些特性劣化较少。