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21. 发明授权

US07491705B2 Alpha-ketoamide derivative, and production method and use thereof 有权
标题翻译： α-酮酰胺衍生物及其制备方法和用途
公开(公告)号：US07491705B2
公开(公告)日：2009-02-17
申请号：US10582015
申请日：2004-12-08
申请人： Yoshihisa Shirasaki , Hiroyuki Miyashita , Masayuki Nakamura , Jun Inoue
发明人： Yoshihisa Shirasaki , Hiroyuki Miyashita , Masayuki Nakamura , Jun Inoue
IPC分类号： A61K38/05
CPC分类号： C07D213/30 , C07C271/22 , C07C2601/02 , C07C2601/04 , C07C2602/08 , C07D295/215 , C07D307/20 , C07D309/12
摘要： The present invention provides a compound represented by the formula (I): (wherein R1 is a lower alkyl substituted by a lower alkoxy or a heterocyclic group, or a heterocyclic group; R2 is a lower alkyl optionally substituted by a phenyl; and R3 is a lower alkyl optionally substituted by a halogen, a lower alkoxy or a phenyl, or a fused polycyclic hydrocarbon group), which is well absorbed orally, exhibits durability of good blood level and has potent calpain inhibitory activity.
摘要翻译：本发明提供由式（I）表示的化合物：其中R1是被低级烷氧基或杂环基取代的低级烷基或杂环基; R2是任意被苯基取代的低级烷基，R3是被卤素，低级烷氧基或苯基或稠合多环烃基任选取代的低级烷基），其口服良好吸收，具有良好的血液水平的耐久性，并具有有效的钙蛋白酶抑制活性。

22. 发明申请

US20080280048A1 Single wafer processing unit 审中-公开
标题翻译：单晶片处理单元
公开(公告)号：US20080280048A1
公开(公告)日：2008-11-13
申请号：US12078332
申请日：2008-03-28
申请人： Shigeru Kasai , Hiroyuki Miyashita
发明人： Shigeru Kasai , Hiroyuki Miyashita
IPC分类号： B05C11/00 , B05D3/02
CPC分类号： H01L21/67248 , H01L21/67115
摘要： This invention relates to a thermal processing method including: a placing step of placing an object to be processed onto a stage arranged in a processing container that can be vacuumed; and a heating step of heating the object to be processed to a predetermined temperature. The object to be processed is heated under a state in which a temperature distribution is maintained in such a manner that a temperature at a central portion of the object to be processed is high while a temperature at a peripheral portion of the object to be processed is low, during at least a part of the heating step.
摘要翻译：本发明涉及一种热处理方法，包括：放置步骤，将待处理物体放置在布置在可被抽真空的处理容器中的台上; 以及将被处理物体加热到规定温度的加热工序。待加工对象在保持温度分布的状态下被加热，使得待处理物体的中心部分的温度高，而被加工物的周边部分的温度为在加热步骤的至少一部分期间为低。

23. 发明授权

US5738959A Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same comprising fluorine in phase shift layer 失效
标题翻译：半色调相移光掩模，半色调相移光掩模坯，以及在相移层中制造含氟的方法
公开(公告)号：US5738959A
公开(公告)日：1998-04-14
申请号：US722439
申请日：1996-10-17
申请人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
发明人： Hiroyuki Miyashita , Hiroshi Mohri , Masahiro Takahashi , Naoya Hayashi
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out at a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译：对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。除铬原子以外，铬化合物至少含有氟原子。即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。因此，可以实现高分辨率光刻。由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。

24. 发明授权

US5614335A Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them 失效
标题翻译：半色调相移光掩模的空白，半色调相移光掩模及其制造方法
公开(公告)号：US5614335A
公开(公告)日：1997-03-25
申请号：US282465
申请日：1994-08-01
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.
摘要翻译：本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模的转移模式。

25. 发明授权

US08440939B2 Annealing device 失效
标题翻译：退火装置
公开(公告)号：US08440939B2
公开(公告)日：2013-05-14
申请号：US12680221
申请日：2008-09-25
申请人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
发明人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
IPC分类号： H05B3/00
CPC分类号： H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
摘要翻译：公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光对应于来自发光元件的光被传输到其中的加热源设置的构件。加热源具有附着在朝向晶片的支撑件上的发光元件。每个发光元件分别被透明树脂制成的透镜层覆盖。

26. 发明授权

US08124168B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08124168B2
公开(公告)日：2012-02-28
申请号：US11667945
申请日：2006-04-04
申请人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
发明人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
IPC分类号： C23C16/46
CPC分类号： C23C16/46 , C23C16/52 , H01L21/67248 , H01L22/10
摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.
摘要翻译：公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

27. 发明申请

US20100314377A1 ANNEALING DEVICE 失效
标题翻译：退火装置
公开(公告)号：US20100314377A1
公开(公告)日：2010-12-16
申请号：US12680221
申请日：2008-09-25
申请人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
发明人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
IPC分类号： H05B1/00 , H01L21/26 , H01L33/00
CPC分类号： H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
摘要翻译：公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光对应于来自发光元件的光被传输到其中的加热源设置的构件。加热源具有附着在朝向晶片的支撑件上的发光元件。每个发光元件分别被透明树脂制成的透镜层覆盖。

28. 发明授权

US07151708B2 Semiconductor integrated circuit and operational amplifier 有权
标题翻译：半导体集成电路和运算放大器
公开(公告)号：US07151708B2
公开(公告)日：2006-12-19
申请号：US11145189
申请日：2005-06-06
申请人： Yasuhiro Hinokuma , Hiroyuki Miyashita
发明人： Yasuhiro Hinokuma , Hiroyuki Miyashita
IPC分类号： G11C5/14
CPC分类号： H03F3/45179 , H03F3/45479
摘要： Deterioration in characteristics of a MOS transistor due to bias instability caused in a stand-by mode is suppressed to prevent deterioration in circuit characteristics. An operational amplifier circuit according to this invention includes MOS transistors for connection that are connected between back gates of differential MOS transistors and their sources and a MOS transistor for biasing that is connected between a power supply potential and the back gates. One of the MOS transistors for connection is a P-channel type MOS transistor having a gate to which a stand-by signal STB is applied. Another of the MOS transistors for connection is an N-channel type MOS transistor having a gate to which the reverse stand-by signal STBB is applied. And the MOS transistor for biasing is a P-channel type MOS transistor having a gate to which the reverse stand-by signal STBB is applied.
摘要翻译：抑制由于在待机模式引起的偏置不稳定性导致的MOS晶体管的特性劣化，以防止电路特性的劣化。根据本发明的运算放大器电路包括连接在差动MOS晶体管的后栅极和它们的源极之间的用于连接的MOS晶体管，以及连接在电源电位和后门之间的用于偏置的MOS晶体管。用于连接的MOS晶体管之一是具有被施加待机信号STB的栅极的P沟道型MOS晶体管。用于连接的MOS晶体管中的另一个是具有施加反向待机信号STBB的栅极的N沟道型MOS晶体管。并且用于偏置的MOS晶体管是具有施加反向待机信号STBB的栅极的P沟道型MOS晶体管。

29. 发明申请

US20050281103A1 Semiconductor integrated circuit and operational amplifier 有权
标题翻译：半导体集成电路和运算放大器
公开(公告)号：US20050281103A1
公开(公告)日：2005-12-22
申请号：US11145189
申请日：2005-06-06
申请人： Yasuhiro Hinokuma , Hiroyuki Miyashita
发明人： Yasuhiro Hinokuma , Hiroyuki Miyashita
IPC分类号： H03K17/30 , G11C29/00 , H03F1/52 , H03F3/45
CPC分类号： H03F3/45179 , H03F3/45479
摘要： Deterioration in characteristics of a MOS transistor due to bias instability caused in a stand-by mode is suppressed to prevent deterioration in circuit characteristics. An operational amplifier circuit according to this invention includes MOS transistors for connection that are connected between back gates of differential MOS transistors and their sources and a MOS transistor for biasing that is connected between a power supply potential and the back gates. One of the MOS transistors for connection is a P-channel type MOS transistor having a gate to which a stand-by signal STB is applied. Another of the MOS transistors for connection is an N-channel type MOS transistor having a gate to which the reverse stand-by signal STBB is applied. And the MOS transistor for biasing is a P-channel type MOS transistor having a gate to which the reverse stand-by signal STBB is applied.
摘要翻译：抑制由于在待机模式引起的偏置不稳定性导致的MOS晶体管的特性劣化，以防止电路特性的劣化。根据本发明的运算放大器电路包括连接在差动MOS晶体管的后栅极和它们的源极之间的用于连接的MOS晶体管，以及连接在电源电位和后门之间的用于偏置的MOS晶体管。用于连接的MOS晶体管之一是具有被施加待机信号STB的栅极的P沟道型MOS晶体管。用于连接的MOS晶体管中的另一个是具有施加反向待机信号STBB的栅极的N沟道型MOS晶体管。并且用于偏置的MOS晶体管是具有施加反向待机信号STBB的栅极的P沟道型MOS晶体管。

30. 发明授权

US5576123A Overlying shifter type phase shift photomask blank, overlying shifter type phase shift photomask and methods of producing them 失效
标题翻译：上覆移位器型相移光掩模空白，上覆移位器型相移光掩模及其制造方法
公开(公告)号：US5576123A
公开(公告)日：1996-11-19
申请号：US405807
申请日：1995-03-16
申请人： Hiroshi Mohri , Hiroyuki Miyashita
发明人： Hiroshi Mohri , Hiroyuki Miyashita
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： An overlying shifter type phase shift photomask used to produce semiconductor integrated circuits of high integration density, e.g. VLSI, ULSI, etc., which is capable of transferring fine-line patterns to a wafer by projection exposure. The photomask is produced by forming at least a light-blocking layer pattern or a combination of a light-blocking layer pattern and an etching stopper layer for a shifter layer on a transparent substrate, forming a shifter layer over the whole surface of the substrate, and then patterning the shifter layer to form a shifter layer pattern. The production method includes the step of polishing away unevenness on the surface of the shifter layer caused by a step which is produced by the light-blocking layer pattern, thereby leveling the surface of the shifter layer.
摘要翻译：用于产生高集成度密度的半导体集成电路的覆盖移位器型相移光掩模，例如， VLSI，ULSI等，其能够通过投影曝光将细线图案转印到晶片。通过在透明基板上形成至少遮光层图案或遮光层图案和用于移动层的蚀刻停止层的组合而形成光掩模，在基板的整个表面上形成移位层，然后构图移位层以形成移位层图案。该制造方法包括：通过由遮光层图案产生的台阶抛光移位层的表面上的凹凸，从而平整移位层的表面的步骤。

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