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21. 发明授权

US08264865B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element 有权
标题翻译：非易失性存储元件，其制造方法和非易失性存储元件的非易失性半导体器件
公开(公告)号：US08264865B2
公开(公告)日：2012-09-11
申请号：US12677404
申请日：2009-07-01
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（108）介于第一电极（103）和第二电极（107）之间的电阻变化层（107），其被配置为响应于施加在电极（103）和（108）之间的电信号可逆地切换电阻值，，并且电阻变化层（107）具有至少多层结构，其中具有表示为HfO x（0.9＆nlE; x＆nlE; 1.6）的组成的第一含铪层和具有组成的第二含铪层表示为HfOy（1.8

22. 发明申请

US20110233510A1 NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件
公开(公告)号：US20110233510A1
公开(公告)日：2011-09-29
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103); a second electrode (109); and a resistance variable layer (106) disposed between the first electrode and the second electrode, resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the first electrode and the second electrode; at least one of the first electrode and the second electrode including a platinum-containing layer (107) comprising platinum; the resistance variable layer including at least a first oxygen-deficient transition metal oxide layer (104) which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer (105) which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer; x
摘要翻译：本发明的非易失性存储元件包括第一电极（103）第二电极（109）; 以及设置在所述第一电极和所述第二电极之间的电阻变化层（106），所述电阻变化层的电阻值响应于施加在所述第一电极和所述第二电极之间的电信号而可逆地变化; 所述第一电极和所述第二电极中的至少一个包括含铂的含铂层（107）所述电阻变化层至少包括不与所述含铂层物理接触的第一缺氧过渡金属氧化物层（104）和第二缺氧过渡金属氧化物层（105），所述第二缺氧过渡金属氧化物层（105）设置在所述第一氧缺陷型过渡金属氧化物层和含铂层，并且与含铂层物理接触; 当第一缺氧过渡金属氧化物层中包含的缺氧过渡金属氧化物被表示为MOx时，x

23. 发明授权

US5436780A Thin film magnetic head device 失效
标题翻译：薄膜磁头装置
公开(公告)号：US5436780A
公开(公告)日：1995-07-25
申请号：US897448
申请日：1992-06-10
申请人： Yuji Nagata , Toshio Fukazawa , Kumiko Wada , Yoshihiro Tozaki , Satoru Mitani , Terumi Yanagi
发明人： Yuji Nagata , Toshio Fukazawa , Kumiko Wada , Yoshihiro Tozaki , Satoru Mitani , Terumi Yanagi
IPC分类号： G11B5/31 , G11B5/48 , G11B15/12 , G11B5/265
CPC分类号： G11B15/125 , G11B5/3103 , G11B5/4893
摘要： A thin film magnetic head device to be equipped on a magnetic recording and reproducing system can meet a plurality of recording formats and carry out stabilized recording/reproducing without depending on the running direction of the magnetic tape. There are combined either of at least two thin film magnetic heads for recording each having on a substrate a recording transducer for recording information on a magnetic tape or two thin film magnetic heads for reproducing each having a reproducing transducer for reading out information recorded on a magnetic tape or two thin magnetic heads for recording and reproducing .in which the recording transducer and the reproducing transducer exist together. According to the running direction of the magnetic tape, only the thin film magnetic head Which is situated at the downstream side in the running direction of the magnetic tape is activated to be always in an operating condition.
摘要翻译：配备在磁记录再现系统上的薄膜磁头装置可以满足多种记录格式，并且不依赖于磁带的运行方向进行稳定的记录/再现。至少两个薄膜磁头中的至少两个用于记录的薄膜磁头中的每一个都具有用于在磁带上记录信息的记录换能器或用于再现每个具有用于读出记录在磁性上的信息的再现换能器的两个薄膜磁头的记录换能器磁带或两个用于记录和再现的薄磁头，其中记录换能器和再现换能器存在一起。根据磁带的运行方向，只有位于磁带运行方向下游侧的薄膜磁头被激活才能始终处于工作状态。

24. 发明授权

US5412524A Magneto-resistive head 失效
标题翻译：磁阻头
公开(公告)号：US5412524A
公开(公告)日：1995-05-02
申请号：US985219
申请日：1992-12-03
申请人： Yuji Nagata , Satoru Mitani , Kazuo Nakamura
发明人： Yuji Nagata , Satoru Mitani , Kazuo Nakamura
IPC分类号： G11B5/39 , G11B5/127 , G01R33/02
CPC分类号： G11B5/3903
摘要： A hard magnetic thin film magnetized in one direction is disposed on or in the vicinity of a magneto-resistive element upon which inclined electrodes are formed. A magnetic field from the hard magnetic film magnetizes the magneto-resistive element stably so that the element has a single magnetic domain. Thus, the magneto-resistive head is remarkably stable with respect to the disturbance magnetic field and inhibits Barkhausen noise from being produced. As a result, the magneto-resistive head reproduces stably and with an improved S/N ratio.
摘要翻译：在一个方向上磁化的硬磁性薄膜设置在其上形成倾斜电极的磁阻元件上或附近。来自硬磁性膜的磁场稳定地磁化磁阻元件，使得元件具有单个磁畴。因此，磁阻头相对于扰动磁场非常稳定，并且抑制了巴克豪森噪声的产生。结果，磁阻头稳定地再现并具有改善的S / N比。

25. 发明授权

US08309946B2 Resistance variable element 有权
标题翻译：电阻变元
公开(公告)号：US08309946B2
公开(公告)日：2012-11-13
申请号：US12935455
申请日：2009-07-22
申请人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
发明人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： A resistance variable element of the present invention comprises a first electrode (103), a second electrode (107), and a resistance variable layer which is interposed between the first electrode (103) and the second electrode (107) to contact the first electrode (103) and the second electrode (107), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode (103) and the second electrode (107), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode (107) comprising platinum having minute hillocks (108).
摘要翻译：本发明的电阻可变元件包括第一电极（103），第二电极（107）和介于第一电极（103）和第二电极（107）之间的电阻变化层，以接触第一电极（103）和第二电极（107），电阻变化层被配置为响应于施加在第一电极（103）和第二电极（107）之间的具有不同极性的电信号而改变，电阻变化层包括氧缺乏的过渡金属氧化物层，以及包含具有分开的小丘（108）的铂的第二电极（107）。

26. 发明授权

US08233311B2 Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias 有权
标题翻译：可变电阻非易失性存储装置具有通过通孔彼此连接的平行布线形成的源极线
公开(公告)号：US08233311B2
公开(公告)日：2012-07-31
申请号：US13310894
申请日：2011-12-05
申请人： Kazuhiko Shimakawa , Yoshihiko Kanzawa , Satoru Mitani , Shunsaku Muraoka
发明人： Kazuhiko Shimakawa , Yoshihiko Kanzawa , Satoru Mitani , Shunsaku Muraoka
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1625
摘要： The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) which reversibly changes based on electrical signals each having a different polarity and a transistor (317) including a semiconductor substrate (301) and two N-type diffusion layer regions (302a, 302b), wherein the variable resistance layer (309b) includes an oxygen-deficient oxide of a transition metal, lower and upper electrodes (309a, 309c) are made of materials of different elements, a standard electrode potential V1 of the lower electrode (309a), a standard electrode potential V2 of the upper electrode (309c), and a standard electrode potential Vt of the transition metal satisfy Vt
摘要翻译：可变电阻非易失性存储装置包括通过串联连接可变电阻元件（309）形成的存储单元（300），该可变电阻元件（309）包括基于各自具有不同极性的电信号可逆地改变的可变电阻层（309b）和晶体管（307），包括半导体衬底（301）和两个N型扩散层区域（302a，302b），其中可变电阻层（309b）包括过渡金属的氧缺乏氧化物，下电极和上电极（309a， 309c）的材料由下部电极（309a）的标准电极电位V1，上部电极（309c）的标准电极电位V2，过渡金属的标准电极电位Vt满足Vt

27. 发明授权

US08179713B2 Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device 有权
标题翻译：非易失性存储元件，非易失性存储器件和非易失性半导体器件
公开(公告)号：US08179713B2
公开(公告)日：2012-05-15
申请号：US12671162
申请日：2009-05-18
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) which is provided between the first electrode and the second electrode, and is configured to reversibly switch an interelectrode resistance value which is a resistance value between the first electrode and the second electrode, in response to an interelectrode voltage which is an electric potential of the second electrode on the basis of the first electrode, the resistance variable layer includes an oxygen-deficient transition metal oxide, the first electrode side and the second electrode side have an asymmetric structure, a portion of the resistance variable layer which is located at the first electrode side and a portion of the resistance variable layer which is located at the second electrode side are each configured to be selectively placed into one of a low-resistance state and a high-resistance state, so as to attain a stable state in three or more different interelectrode resistance values, the stable state being a state in which the interelectrode resistance value is invariable regardless of a change in the interelectrode voltage within a specified range.
摘要翻译：非易失性存储元件包括设置在第一电极和第二电极之间的第一电极（103），第二电极（105）和电阻变化层（104），并且被配置为可逆地切换电极间电阻值，是第一电极和第二电极之间的电阻值，响应于基于第一电极的第二电极的电位的电极间电压，电阻变化层包括缺氧过渡金属氧化物，第一电极侧和第二电极侧具有不对称结构，位于第一电极侧的电阻变化层的一部分和位于第二电极侧的电阻变化层的一部分分别构成为选择性地放置成低电阻状态和高电阻状态之一，以达到三个或更多个差异的稳定状态出现电极间电阻值，稳定状态是不管电极间电压在规定范围内的变化如何，电极间电阻值不变的状态。

28. 发明授权

US5663644A Magnetoresistive sensor having a bias field applied at approximately 56.degree. 失效
标题翻译：磁阻传感器具有施加在大约56°的偏置场
公开(公告)号：US5663644A
公开(公告)日：1997-09-02
申请号：US632403
申请日：1996-08-05
申请人： Hiroshi Shimamura , Satoru Mitani
发明人： Hiroshi Shimamura , Satoru Mitani
IPC分类号： G01D5/14 , G01D5/16 , G01D5/245 , G01P3/487 , G01R33/09 , G11B5/00 , G11B5/39 , G01R33/02 , G01B5/30
CPC分类号： G01D5/145 , G01P3/487 , G01R33/09 , G11B5/00 , G11B5/3903
摘要： The present invention relates to a magnetic signal detection apparatus utilizing a ferromagnetic thin film magneto-resistive element which produces a maximum output of high linearity with an optimum direction of magnetization of the thin film magneto-resistive element by a small biasing magnetic field. A biasing magnetic field Hb is applied at an angle of approximately 56.degree. to a direction of a current I along a longitudinal direction of a thin film magneto-resistive element (2) on a substrate (1) to make a direction of magnetization M to approximately 45.degree. to attain a highly linear output between power supply terminals (4, 5).
摘要翻译： PCT No.PCT / JP95 / 01674 Sec。 371日期：1996年8月5日 102（e）日期1996年8月5日PCT提交1995年8月23日PCT公布。出版物WO96 / 06329 日期：1996年2月29日本发明涉及一种利用铁磁性薄膜磁阻元件的磁信号检测装置，该磁性信号检测装置通过小的偏压产生具有最佳薄膜磁阻元件的磁化方向的高线性度的最大输出磁场。偏置磁场Hb沿基板（1）上的薄膜磁阻元件（2）的纵向方向与电流I的方向成大约56°的角度施加，以使磁化方向M成为约45°，以在电源端子（4,5）之间达到高线性输出。

29. 发明授权

US5585985A Magneto-resistive head including a film of hard magnetic material 失效
标题翻译：磁阻头包括硬磁材料薄膜
公开(公告)号：US5585985A
公开(公告)日：1996-12-17
申请号：US378593
申请日：1995-01-26
申请人： Yuji Nagata , Satoru Mitani , Kazuo Nakamura
发明人： Yuji Nagata , Satoru Mitani , Kazuo Nakamura
IPC分类号： G11B5/39 , G11B5/127 , G01R33/02
CPC分类号： G11B5/3903
摘要： A hard magnetic thin film magnetized in one direction is disposed on or in the vicinity of a magneto-resistive element upon which inclined electrodes are formed. A magnetic field from the hard magnetic film magnetizes the magneto-resistive element stably so that the element has a single magnetic domain. Thus, the magneto-resistive head is remarkably stable with respect to the disturbance magnetic field and inhibits Barkhausen noise from being produced. As a result, the magneto-resistive head reproduces stably and with an improved S/N ratio.
摘要翻译：在一个方向上磁化的硬磁性薄膜设置在其上形成倾斜电极的磁阻元件上或附近。来自硬磁性膜的磁场稳定地磁化磁阻元件，使得元件具有单个磁畴。因此，磁阻头相对于扰动磁场非常稳定，并且抑制了巴克豪森噪声的产生。结果，磁阻头稳定地再现并具有改善的S / N比。

30. 发明授权

US5335127A Lamination type magneto-resistive head 失效
标题翻译：层压型磁阻头
公开(公告)号：US5335127A
公开(公告)日：1994-08-02
申请号：US902580
申请日：1992-06-22
申请人： Yuji Nagata , Toshio Fukazawa , Satoru Mitani
发明人： Yuji Nagata , Toshio Fukazawa , Satoru Mitani
IPC分类号： G11B5/127 , G11B5/39 , G11B5/48
CPC分类号： G11B5/3925 , G11B5/3951 , G11B5/3977 , G11B5/4893
摘要： A lamination type magneto-resistive head used for a magnetic reproducing apparatus is formed by laminating two magneto-resistive heads, at least with the position of two magneto-resistive elements substantially shifted from each other for lamination and also enabling a plurality of track formats to be conformed, thus making it possible to assure stable outputs at a low frequency range.
摘要翻译：用于磁再现装置的层叠型磁阻头通过层叠两个磁阻头而形成，至少两个磁阻元件的位置彼此基本上相互偏移以进行层压，并且还使得多个磁道格式能够因此可以在低频范围内确保稳定的输出。

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