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21. 发明授权

US09643085B2 Computer-readable storage medium, information processing system, and information processing method for controlling a virtual object using attitude data 有权
公开(公告)号：US09643085B2
公开(公告)日：2017-05-09
申请号：US13277561
申请日：2011-10-20
申请人： Hiroshi Matsunaga , Yugo Hayashi , Kazuya Sumaki , Keiichi Minato
发明人： Hiroshi Matsunaga , Yugo Hayashi , Kazuya Sumaki , Keiichi Minato
IPC分类号： A63F13/42 , A63F13/214 , A63F13/5258 , A63F13/5255 , A63F13/26 , A63F13/211 , A63F13/218
CPC分类号： A63F13/42 , A63F13/211 , A63F13/214 , A63F13/218 , A63F13/26 , A63F13/5255 , A63F13/5258 , A63F2300/105 , A63F2300/1068 , A63F2300/301 , A63F2300/403 , A63F2300/6676 , A63F2300/6684
摘要： An object arranged in a virtual world is caused to move in accordance with data based on a load applied to a load detection device. Then, based on attitude data outputted from a portable display device and a position of the object in the virtual world, a first virtual camera for generating an image of the virtual world is controlled, and a first image representing the virtual world viewed from the first virtual camera is displayed on the portable display device.

22. 发明授权

US09561443B2 Computer-readable storage medium, information processing system, and information processing method 有权
标题翻译：计算机可读存储介质，信息处理系统和信息处理方法
公开(公告)号：US09561443B2
公开(公告)日：2017-02-07
申请号：US13283032
申请日：2011-10-27
申请人： Hiroshi Matsunaga , Kazuya Sumaki
发明人： Hiroshi Matsunaga , Kazuya Sumaki
IPC分类号： G09G5/00 , A63F13/20 , A63F13/428 , A63F13/92 , A63F13/211 , A63F13/214 , A63F13/525
CPC分类号： A63F13/428 , A63F13/211 , A63F13/214 , A63F13/525 , A63F13/92 , A63F2300/105 , A63F2300/1068 , A63F2300/301 , A63F2300/307 , A63F2300/403 , A63F2300/6684
摘要： A movement direction of an object arranged in a virtual world is set based on attitude data. Further, the object is moved in the movement direction in the virtual world in accordance with data based on a load applied to a load detection device. An image showing the virtual world including at least the object or an image showing the virtual world viewed from the object is displayed as a first image on a portable display device.
摘要翻译：基于姿态数据来设定布置在虚拟世界中的物体的移动方向。此外，根据基于施加到负载检测装置的负载的数据，物体在虚拟世界中沿运动方向移动。显示虚拟世界的图像至少包括从对象观看的虚拟世界的对象或图像被显示为便携式显示设备上的第一图像。

23. 发明授权

US09539511B2 Computer-readable storage medium, information processing system, and information processing method for operating objects in a virtual world based on orientation data related to an orientation of a device 有权
标题翻译：计算机可读存储介质，信息处理系统和用于基于与设备的取向有关的定向数据在虚拟世界中操作对象的信息处理方法
公开(公告)号：US09539511B2
公开(公告)日：2017-01-10
申请号：US13283072
申请日：2011-10-27
申请人： Hiroshi Matsunaga , Keiichi Minato
发明人： Hiroshi Matsunaga , Keiichi Minato
IPC分类号： G06T15/00 , A63F13/428
CPC分类号： A63F13/428 , A63F13/06 , A63F13/211 , A63F13/525 , A63F2300/105 , A63F2300/1056 , A63F2300/301 , A63F2300/403 , A63F2300/6045 , A63F2300/6684
摘要： It is determined, based on attitude data, whether or not a direction of a predetermined axis set in a portable display device is within a first range. When the result of the determination is that the direction of the predetermined axis is within the first range, an action of a first object arranged in a virtual world is controlled based on the direction of the predetermined axis. When it is determined that the direction of the predetermined axis is outside the first range, at least an action of a second object arranged in the virtual world is controlled based on the direction of the predetermined axis. Then, a first image showing the virtual world including at least the first object and the second object is displayed on the portable display device.
摘要翻译：基于姿态数据确定在便携式显示装置中设定的预定轴的方向是否在第一范围内。当确定的结果是预定轴的方向在第一范围内时，基于预定轴的方向来控制布置在虚拟世界中的第一对象的动作。当确定预定轴线的方向在第一范围之外时，至少基于预定轴线的方向来控制布置在虚拟世界中的第二物体的动作。然后，显示包括至少第一对象和第二对象的虚拟世界的第一图像被显示在便携式显示装置上。

24. 发明授权

US09308775B2 Bearing device for wheel and manufacturing method therefor 有权
标题翻译：用于车轮的轴承装置及其制造方法
公开(公告)号：US09308775B2
公开(公告)日：2016-04-12
申请号：US14434192
申请日：2013-09-13
申请人： Hiroshi Matsunaga , Masahiro Tosaji
发明人： Hiroshi Matsunaga , Masahiro Tosaji
IPC分类号： F16C33/64 , B60B27/00 , C21D9/40 , B21D53/10
CPC分类号： B60B27/0005 , B21D53/10 , B21K25/00 , B60B19/00 , B60B27/0031 , B60B27/0084 , B60B33/00 , B60B33/0063 , B60B2310/211 , B60B2900/112 , B60B2900/313 , C21D9/40 , F16C19/186 , F16C33/64 , F16C43/04 , F16C2326/02 , F16D1/076 , F16D3/223 , F16D2003/22326 , Y10T29/49689
摘要： A bearing device for a wheel includes an outer member having double-row outer raceway surfaces formed on an inner circumference thereof, an inner member including a hub wheel having a wheel mounting flange formed thereon and at least one inner race fitted to a small-diameter step portion formed on an outer circumference of the hub wheel, the inner member having double-row inner raceway surfaces formed thereon so as to be opposed to the double-row outer raceway surfaces, and a plurality of rolling elements in spaces between the double-row inner and outer raceway surfaces. The at least one inner race being fixed in an axial direction thereof by a staked portion, the staked portion having a face spline formed on an end surface thereof by plastic working.
摘要翻译：一种用于车轮的轴承装置包括：外部构件，其具有形成在其内周上的双列外滚道表面;内部构件，其包括轮毂轮，所述轮毂轮具有形成在其上的轮安装凸缘和至少一个内径小于在所述轮毂轮的外周形成的台阶部，所述内侧构件具有与所述双列外侧滚道面相对形成的双列内侧滚道面，行内和外滚道表面。所述至少一个内圈通过铆接部沿其轴向方向固定，所述铆接部具有通过塑性加工形成在其端面上的面花键。

25. 发明授权

US08859411B2 Method for producing transistor 有权
标题翻译：晶体管的制造方法
公开(公告)号：US08859411B2
公开(公告)日：2014-10-14
申请号：US13817699
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
发明人： Kenji Shimada , Hiroshi Matsunaga , Kojiro Abe , Kenji Yamada
IPC分类号： H01L29/76 , H01L21/28 , C09K13/08 , H01L21/8238 , H01L21/02 , H01L21/8234 , H01L29/66 , H01L21/311 , H01L29/40 , H01L21/3213 , C09K13/06
CPC分类号： H01L29/401 , C09K13/06 , C09K13/08 , H01L21/02068 , H01L21/28079 , H01L21/31111 , H01L21/32134 , H01L21/82345 , H01L21/823842 , H01L29/66545
摘要： According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.
摘要翻译：根据本发明，通过选择性地蚀刻天然氧化硅膜，并且进一步通过选择性地蚀刻由硅制成的虚拟栅极，提供了以高产率制造具有高精度和高质量的晶体管的方法。本发明涉及一种使用包括基板的结构体制造晶体管的方法，以及通过将至少具有高介电材料膜和由硅制成的具有天然氧化硅膜的虚拟栅极层叠在一起而形成的虚拟栅极叠层表面，设置成覆盖层压体的侧表面的侧壁和设置成覆盖设置在基板上的侧壁的层间绝缘膜，所述工艺包括使用特定蚀刻溶液的蚀刻步骤，从而替换伪栅极与铝金属门。

26. 发明授权

US08623587B2 Residue removing liquid composition and method for cleaning semiconductor element using same 有权
标题翻译：残渣除去液组合物及使用其的半导体元件的清洗方法
公开(公告)号：US08623587B2
公开(公告)日：2014-01-07
申请号：US13057338
申请日：2009-07-07
申请人： Kyoko Kamata , Keiichi Tanaka , Hiroshi Matsunaga
发明人： Kyoko Kamata , Keiichi Tanaka , Hiroshi Matsunaga
IPC分类号： G03F7/26
CPC分类号： H01L21/02071 , C11D7/10 , C11D7/244 , C11D7/261 , C11D7/34 , C11D7/5004 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/02063
摘要： Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it.The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).
摘要翻译：本发明提供一种残留物除去液体组合物，其能够在具有铝（Al）金属配线的半导体基板的制造工序中完全除去抗蚀剂残渣和残留在通孔形成中的干法蚀刻和灰化之后残留的钛（Ti）或Al合金，在短时间内的低温下，不会腐蚀层间绝缘材料的部分，布线材料等，以及使用它的半导体器件的清洁方法。除去残渣的液体组合物含有（A）氟化铵，（B）甲磺酸，（C）具有碳 - 碳三键的化合物，（D）水溶性有机溶剂和（E）水，残渣除去液组合物中的（A），（C），（D）和（E）为0.005〜2质量％，0.1〜10质量％，60〜75质量％ 38质量％，（B）的含量为（A）的量的0.9〜1.5倍（摩尔）。

27. 发明申请

US20130203263A1 SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME 审中-公开
标题翻译：硅蚀刻剂及其制造方法
公开(公告)号：US20130203263A1
公开(公告)日：2013-08-08
申请号：US13819107
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Shimada , Hiroshi Matsunaga
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02068 , H01L21/32134 , H01L29/51 , H01L29/66545 , H01L29/78
摘要： According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution.
摘要翻译：根据本发明，提供了一种用于在制造包括由至少高介电材料膜和铝金属栅极形成的层压体的晶体管的工艺中选择性地蚀刻由硅制成的虚拟栅极的蚀刻溶液，其方法为去除由硅制成的虚拟栅极以用铝金属栅极替代伪栅极，以及使用该蚀刻溶液制造晶体管的工艺。本发明涉及用于蚀刻由硅制成的虚拟栅极的硅蚀刻溶液，其包括0.1至40重量％的至少一种选自氨，二胺和由通式表示的多胺的碱金属化合物（1），5〜50重量％的由通式（2）表示的至少一种多元醇和40〜94.9重量％的水，以及使用硅蚀刻溶液制造晶体管的方法。

28. 发明申请

US20130178069A1 SILICON ETCHING FLUID AND METHOD FOR PRODUCING TRANSISTOR USING SAME 有权
标题翻译：硅蚀刻液及其制造方法
公开(公告)号：US20130178069A1
公开(公告)日：2013-07-11
申请号：US13823769
申请日：2011-07-26
申请人： Kenji Shimada , Hiroshi Matsunaga
发明人： Kenji Shimada , Hiroshi Matsunaga
IPC分类号： C09K13/00 , H01L21/306
CPC分类号： C09K13/00 , H01L21/02068 , H01L21/28079 , H01L21/30604 , H01L21/32134 , H01L21/823842 , H01L29/66545
摘要： The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution.
摘要翻译：本发明涉及一种硅蚀刻溶液，其用于在制造包括至少由高介电材料膜和含有铪，锆，钛的金属栅极形成的层叠体的晶体管的工艺中选择性地蚀刻由硅制成的虚拟栅极通过除去由硅制成的虚拟栅极以用金属栅极取代虚拟栅极的方法，其包括0.1至40重量％的至少一种选自氨，二胺和由通式（1）表示的多胺，0.01〜40重量％的选自特定多元醇和非还原糖的至少一种多元醇和40〜99.89重量％的水，以及使用硅蚀刻溶液制造晶体管的工艺。

29. 发明授权

US08469810B2 Storage medium having game program stored thereon and game apparatus 有权
标题翻译：存储有游戏程序的存储介质和游戏装置
公开(公告)号：US08469810B2
公开(公告)日：2013-06-25
申请号：US11252739
申请日：2005-10-19
申请人： Keigo Nakanishi , Hiroshi Matsunaga , Shinichi Ikematsu
发明人： Keigo Nakanishi , Hiroshi Matsunaga , Shinichi Ikematsu
IPC分类号： A63F13/06 , G06F3/048
CPC分类号： A63F13/426 , A63F13/10 , A63F13/2145 , A63F13/26 , A63F13/92 , A63F13/95 , A63F2300/1075 , A63F2300/204 , A63F2300/301 , A63F2300/6045
摘要： Reference coordinates in a coordinate system and designated coordinates based on coordinate information outputted by a pointing device are provided, and a distance between the reference coordinates and the designated coordinates is calculated. When a first mode is selected, a calculated distance is converted into a predetermined parameter using a first conversion function. On the other hand, when a second mode is selected, a calculated distance is converted into a parameter using a second conversion function. According to whether the first mode is selected or the second mode is selected, a game is processed based on the aforementioned parameter.
摘要翻译：提供坐标系中的参考坐标和基于由指示设备输出的坐标信息的指定坐标，并且计算参考坐标与指定坐标之间的距离。当选择第一模式时，使用第一转换功能将计算出的距离转换成预定参数。另一方面，当选择第二模式时，使用第二转换函数将计算出的距离转换为参数。根据是选择了第一模式还是选择第二模式，基于上述参数来处理游戏。

30. 发明授权

US08096064B2 Method for drying lumber, method of impregnating lumber with chemicals, and drying apparatus 有权
标题翻译：干燥木材的方法，用化学品浸渍木材的方法和干燥装置
公开(公告)号：US08096064B2
公开(公告)日：2012-01-17
申请号：US12000741
申请日：2007-12-17
申请人： Masahiro Matsunaga , Koichi Setoyama , Yutaka Kataoka , Hiroaki Matsui , Hiroshi Matsunaga , Takeshi Fujiwara
发明人： Masahiro Matsunaga , Koichi Setoyama , Yutaka Kataoka , Hiroaki Matsui , Hiroshi Matsunaga , Takeshi Fujiwara
IPC分类号： F26B7/00
CPC分类号： F26B7/00 , F26B21/14 , F26B2210/16
摘要： A method for drying lumber in a short time with less use of energy. The method of drying lumber includes: enclosing lumber in a batch container having a pressure release valve; filling fluid into the batch container under pressure; maintaining a temperature and a pressure at or above a critical point of the fluid for a certain period of time; and then opening the pressure release valve of the batch container to reduce the internal pressure to atmospheric pressure.
摘要翻译：一种在短时间内干燥木材的方法，较少使用能量。干燥木材的方法包括：将木材包封在具有压力释放阀的批量容器中; 在压力下将液体填充到批量容器中; 保持温度和压力等于或高于流体的临界点一段时间; 然后打开批量容器的压力释放阀，以将内部压力降低至大气压力。

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