会员体验
专利管家（专利管理）
工作空间（专利管理）
风险监控（情报监控）
数据分析（专利分析）
侵权分析（诉讼无效）
联系我们
交流群
官方交流：
QQ群： 891211   
微信请扫码    >>>
现在联系顾问~
下载
著录项
PDF全文
热词
    • 21. 发明申请
      US20060268405A1 In-line optical isolator 有权
    • In-line optical isolator
    • 在线光隔离器
    • US20060268405A1
    • 2006-11-30
    • US10558924
    • 2004-06-23
    • Yoshiaki Takeuchi , Masaru Watanabe , Ikuo Fukuzaki
    • Yoshiaki Takeuchi , Masaru Watanabe , Ikuo Fukuzaki
    • G02B5/30 , G02B27/28
    • G02B6/2746 , G02F1/093
    • In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis (3c) of rutile crystal (3) is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (10, 11). Furthermore, the focusing central optical axis (6c) of a focusing rod lens (6) is arranged parallel with optical axes of the optical fibers (10, 11) and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (10) and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (11). An air gap (7) of about 200 [μm] is provided, as a heat insulating means, between the focusing rod lens (6) and a magnetized garnet crystal (8).
    • 在传统的光隔离器中，通过极化分散光信号，或者通过石榴石晶体中的发热来改变特性。 根据本发明，金红石晶体（3）的晶体光轴（3c）被定向成使得普通光线（O）和非寻常光线（E）的分离方向垂直于包括光轴 光纤（10,11）。 此外，聚焦棒透镜（6）的聚焦中心光轴（6c）与光纤（10,11）的光轴平行并且与四条光线基本相等的距离（即普通光线 O）和沿着光纤（10）的光轴传播的异常射线（E）和沿光纤（11）的光轴传播的普通射线（O）和异常射线（E）。 在聚焦棒透镜（6）和被磁化的石榴石晶体（8）之间提供约200μm的气隙（7）作为隔热装置。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 23. 发明授权
      US07002871B2 Asynchronous pseudo SRAM and access method therefor 失效
    • Asynchronous pseudo SRAM and access method therefor
    • 异步伪SRAM及其访问方法
    • US07002871B2
    • 2006-02-21
    • US10762459
    • 2004-01-23
    • Yoshiaki Takeuchi , Kohei Oikawa
    • Yoshiaki Takeuchi , Kohei Oikawa
    • G11C8/00
    • G11C11/22
    • A semiconductor integrated circuit device includes an address buffer which receives an address signal that indicates an address of a memory cell array, a latch circuit which latches the data, and an address transition detection circuit which detects transition of the address. During the access operation of the memory cell array, an address at the operation start time is latched by the latch circuit. After the end of the operation of the memory cell array, an address that is currently input to the address buffer is latched by the latch circuit. If the received address signal is data different from the latch data, a control signal that controls the cycle operation of the memory cell array for a predetermined period is generated on the basis of the detection result from the address transition detection circuit.
    • 半导体集成电路装置包括地址缓冲器，其接收指示存储单元阵列的地址的地址信号，锁存数据的锁存电路以及检测地址的转换的地址转换检测电路。 在存储单元阵列的访问操作期间，操作开始时刻的地址被锁存电路锁存。 在存储单元阵列的操作结束之后，当前输入到地址缓冲器的地址被锁存电路锁存。 如果接收到的地址信号是与锁存数据不同的数据，则根据来自地址转换检测电路的检测结果生成控制存储单元阵列的周期操作达预定周期的控制信号。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 25. 发明授权
      US06906944B2 Ferroelectric memory 失效
    • Ferroelectric memory
    • 铁电存储器
    • US06906944B2
    • 2005-06-14
    • US10676004
    • 2003-10-02
    • Yoshiaki Takeuchi , Yukihito Oowaki
    • Yoshiaki Takeuchi , Yukihito Oowaki
    • G11C14/00 , G11C11/22
    • G11C11/22
    • A ferroelectric memory has a memory cell array of memory cells having ferroelectric capacitors, which is divided into a plurality of blocks, a boost power circuit provided in each block of the memory cell array to generate a boost voltage required for operation of the memory, a boost power switch provided between a power line connected to an external power terminal and a power supply terminal of each boost power circuit, and remaining ON during normal operation of the memory, a voltage detector circuit for detecting a drop of voltage level of the power line, and a switch control circuit for turning off the boost power switches in the blocks of the memory cell array excluding the boost power switch in a currently selected block in response to the voltage detector circuit.
    • 铁电存储器具有具有铁电电容器的存储单元阵列，其被分成多个块，设置在存储单元阵列的每个块中的升压功率电路，以产生存储器的操作所需的升压电压， 升压电源开关，其设置在连接到外部电源端子的电力线与每个升压电力电路的电源端子之间，并且在正常操作期间保持ON;电压检测器电路，用于检测电力线的电压水平的下降 以及开关控制电路，用于响应于电压检测器电路，关闭当前选择的块中除了升压功率开关之外的存储单元阵列的块中的升压功率开关。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 27. 发明授权
      US06627579B1 Titanium oxide, photocatalyst comprising same and photocatalytic coating agent 失效
    • Titanium oxide, photocatalyst comprising same and photocatalytic coating agent
    • 氧化钛，包含它的光催化剂和光催化涂层剂
    • US06627579B1
    • 2003-09-30
    • US09593001
    • 2000-06-13
    • Yoshiaki Sakatani , Hironobu Koike , Yoshiaki Takeuchi
    • Yoshiaki Sakatani , Hironobu Koike , Yoshiaki Takeuchi
    • B01J3734
    • B82Y30/00 , B01J21/063 , B01J35/002 , B01J35/004 , C01G23/047 , C01G23/0532 , C01G23/0536 , C01P2002/70 , C01P2002/84 , C01P2004/64 , C01P2006/60
    • Titanium oxide exhibiting a superior photocatalytic activity through irradiation of a visible light as well as an ultraviolet light, and a photocatalyst and a photocatalytic coating agent including said titanium oxide, wherein said titanium oxide has a value of an index X1 calculated by the following equation (I) of not more than about 0.90, and a value of an index Y1 calculated by the following equation (II) of not less than 0.075, X1=B1/A1  (I) Y1=D1/C1,  (II) wherein A1 and B1 stand for respective half-widths of peaks, which are obtained by the process consisting of the steps: (i) analyzing titanium oxide eight times according to an X-ray phtoelectron spectroscopy, (ii) obtaining an integrated spectrum of an electron state of titanium with respect to the above first analysis and the second analysis, (iii) obtaining a half-width, A1, of a peak within a binding energy range of from 458 eV to 460 eV with respect to the integrated spectrum obtained in the above step (ii), and (iv) carrying out steps (ii) and (iii) with respect to the above seventh and eighth analyses to obtain a half-width, B1, of a peak, and wherein C1 stands for an integrated value of absorbance within a wavelength range of from 250 nm to 550 nm in measurement of an ultraviolet-visible diffuse reflection spectrum of titanium oxide, and D1 stands for an integrated value of absorbance of titanium oxide within a wavelength range of from 400 nm to 550 nm.
    • 通过照射可见光和紫外光而显示优异的光催化活性的氧化钛，以及包含所述氧化钛的光催化剂和光催化剂，其中所述氧化钛具有通过下式计算的指数X1的值（ I）为不大于约0.90，并且通过以下等式（II）计算的指数Y1的值不小于0.075，其中A1和B1代表峰的相应半峰宽，其通过以下方法获得： 步骤：（i）根据X射线电子能谱分析氧化钛八次，（ii）相对于上述第一次分析和第二次分析获得钛的电子态的积分光谱，（iii）获得 相对于上述步骤（ii）中获得的积分光谱，在458eV至460eV的结合能范围内的峰的半峰宽A1，和（iv）进行步骤（ii）和（iii） ）wi 对于上述第七和第八次分析来获得峰的半峰B1，并且其中C1表示在紫外可见的测量中在250nm至550nm的波长范围内的吸光度的积分值 氧化钛的漫反射光谱，D1表示氧化钛在400nm〜550nm的波长范围内的吸光度的积分值。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 28. 发明授权
      US06366490B1 Semiconductor memory device using ferroelectric film 有权
    • Semiconductor memory device using ferroelectric film
    • 使用铁电薄膜的半导体存储器件
    • US06366490B1
    • 2002-04-02
    • US09879054
    • 2001-06-13
    • Yoshiaki Takeuchi , Yukihito Oowaki
    • Yoshiaki Takeuchi , Yukihito Oowaki
    • G11C1122
    • G11C11/22
    • This invention is such that, in a series-connected TC parallel-unit type ferroelectric RAM composed of a series connection of a plurality of unit cells, each unit cell being such that a ferroelectric capacitor is connected between the source and drain of a cell transistor, for instance, plate electrode wires are provided in the longitudinal direction of bit line pairs. The plate electrode wires are shared in memory block groups, each group being a set of a plurality of memory cell blocks connected to the same bit line pair. This causes only the memory cells read from or written into to be accessed by the selected word line and selected plate electrode wire in one select operation.
    • 本发明使得在由多个单元电池的串联连接构成的串联连接的TC并联单元型铁电RAM中，每个单电池使得在单电池晶体管的源极和漏极之间连接有铁电电容器 例如，在位线对的长度方向上设置平板电极线。 板电极线在存储块组中共享，每组是连接到同一位线对的多个存储单元块的集合。 这将导致在一个选择操作中，所选择的字线和选定的板电极线只能读取或写入存储单元。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 29. 发明授权
      US5640355A Semiconductor memory device 失效
    • Semiconductor memory device
    • 半导体存储器件
    • US5640355A
    • 1997-06-17
    • US471507
    • 1995-06-06
    • Kazuyoshi Muraoka , Masaru Koyanagi , Yoshiaki Takeuchi
    • Kazuyoshi Muraoka , Masaru Koyanagi , Yoshiaki Takeuchi
    • G11C11/419 , G11C7/06 , G11C7/12 , G11C11/401 , G11C11/409 , G11C7/00
    • G11C7/065 , G11C7/12
    • A semiconductor memory device including a memory cell array, bit lines, and sense amplifier groups. The memory cell array is composed of a plurality of memory cells arranged roughly in a matrix pattern. A plurality of the memory cells arranged in a row are activated in response to a row address decode signal. A pair of the bit lines are provided for each column. The data of the corresponding activated memory cells are transmitted to the bit line pair. Each of the sense amplifier groups has n-units of sense amplifiers each connected to the bit line pair, to sense and amplify data read to the bit line pair connected thereto. The respective reference potential terminals of the sense amplifiers of each of the sense amplifier groups are connected to a single common node which can be connected to a reference potential via a sense amplifier activating transistor turned on in response to a row address signal. The sense amplifiers can be operated at high speed, while preventing erroneous operation, because the wiring resistances and the parasitic capacitances of the common source node of the sense amplifiers can be reduced.
    • 一种包括存储单元阵列，位线和读出放大器组的半导体存储器件。 存储单元阵列由大致矩阵排列的多个存储单元构成。 响应于行地址解码信号，激活了排成行的多个存储单元。 为每列提供一对位线。 相应的激活的存储器单元的数据被发送到位线对。 读出放大器组中的每一个具有各自连接到位线对的读出放大器的n个单元，以检测和放大读取到与其连接的位线对的数据。 每个读出放大器组的读出放大器的相应参考电位端子连接到单个公共节点，该公共节点可以响应于行地址信号经由读出放大器激活晶体管导通而连接到参考电位。 由于读出放大器的公共源节点的布线电阻和寄生电容可以减小，所以读出放大器可以高速操作，同时防止错误的操作。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
每页展示10个专利
每页展示10个专利
每页展示20个专利
每页展示50个专利
每页展示100个专利

IPRDB

最新中国发明专利 最新美国发明专利 技术领域 专利库 专利分类库 国际专利分类库

热门服务

会员版试用 API 数据接口 找代理 知嘟嘟专利交易 排行榜 大学排行榜 专利百科

关于我们

平台介绍 战略合作 网站地图

友情链接

知嘟嘟专利交易 国家知识产权局 中国商标网

联系方式


©2019-2023 上海吉码数字技术有限公司 版权所有，并保留所有权利 沪ICP备20016256号-6 沪公网安备31011702005475号