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    • 22. 发明授权
    • Magnetic storage device which includes a three terminal magnetic sensor having a collector region electrically isolated from a slider body
    • 磁存储装置,其包括具有与滑块体电隔离的集电极区域的三端磁传感器
    • US08300366B2
    • 2012-10-30
    • US11900537
    • 2007-09-12
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/33
    • H01L43/08G11B5/3993H01L29/66984
    • In one illustrative example, a magnetic storage device includes a three terminal magnetic sensor having a collector region made of a semiconductor material, a base region, and an emitter region. An insulator layer is formed between the collector region and a slider body which carries the three terminal magnetic sensor. The insulator layer serves to reduce a capacitance otherwise present between the collector region and magnetic media at a magnetic field sensing plane of the three terminal magnetic sensor. Thus, the insulator layer electrically isolates the collector region from the slider body. The structure may be formed through use of a separation by implanting oxygen (SIMOX) technique or a wafer-bonding technique, as examples.
    • 在一个说明性示例中,磁存储装置包括具有由半导体材料制成的集电极区域,基极区域和发射极区域的三端子磁传感器。 在收集器区域和承载三端子磁传感器的滑块体之间形成绝缘体层。 绝缘体层用于在三端子磁传感器的磁场感测平面处减小在集电极区域和磁介质之间存在的电容。 因此,绝缘体层将集电极区域与滑块体电隔离。 作为示例,可以通过使用通过注入氧气的分离(SIMOX)技术或晶片结合技术来形成该结构。
    • 28. 发明授权
    • Inductive magnetic head with non-magnetic seed layer gap structure and method for the fabrication thereof
    • 具有非磁性种子层间隙结构的感应磁头及其制造方法
    • US07265942B2
    • 2007-09-04
    • US10813880
    • 2004-03-30
    • April Dawn Hixson-GoldsmithJeffrey S. Lille
    • April Dawn Hixson-GoldsmithJeffrey S. Lille
    • G11B5/23
    • G11B5/235G11B5/187G11B5/3116G11B5/313Y10T29/49046
    • A magnetic head including first and a second magnetic poles with a write gap layer disposed therebetween. In a first embodiment the write gap layer includes a non-magnetic, non-conductive first sublayer which is preferably comprised of Ta or Ti which is deposited upon the first magnetic pole to act as an adhesion layer. The write gap layer then includes a second sublayer which is formed of a non-magnetic, electrically conductive material which is preferably comprised of Rh or Ru. A P2 pole tip is electroplated upon the second sublayer, where the electrically conductive second sublayer is utilized to conduct electroplating current. In an alternative embodiment the write gap layer includes a third sublayer that is etchable in a reactive ion etch (RIE) process, and formed between the first and second sublayers. The third sublayer is preferably comprised of Ta or Ti.
    • 一种磁头,包括第一和第二磁极,其间设置有写间隙层。 在第一实施例中,写间隙层包括非磁性非导电的第一子层,其优选由Ta或Ti组成,其沉积在第一磁极上以用作粘附层。 写间隙层然后包括由非磁性导电材料形成的第二子层,该材料优选由Rh或Ru组成。 P2极端电镀在第二子层上,其中导电的第二子层用于导电电镀电流。 在替代实施例中,写间隙层包括可在反应离子蚀刻(RIE)工艺中蚀刻并形成在第一和第二子层之间的第三子层。 第三子层优选由Ta或Ti组成。
    • 30. 发明授权
    • Magnetic head having heat sink structure
    • 具有散热片结构的磁头
    • US07193817B2
    • 2007-03-20
    • US10791001
    • 2004-03-01
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/40G11B5/31
    • G11B5/3133
    • A magnetic head having a heat sink structure that is disposed proximate the induction coil to draw heat away from sensitive components of the head. The heat sink is fabricated above the second magnetic pole, and is therefore fabricated subsequent to the fabrication of the more delicate components of the magnetic head. In a preferred embodiment, the heat sink is fabricated photolithographically in the same process steps in which the electrical lead to the center tap of the induction coil is fabricated. The only difference in the magnetic head fabrication process is the modification of the photolithographic mask that is used to create the electroplating trench in which the electrical lead is electroplated, and the change to the mask involves the creation of a second opening within the mask for the creation of an electroplating trench at the location of the heat sink.
    • 具有散热结构的磁头,其设置在感应线圈附近以将热量从头部的敏感部件吸走。 散热器制造在第二磁极之上,因此在制造磁头的更精细的部件之后制造散热器。 在优选实施例中,在与制造感应线圈的中心抽头的电导线相同的工艺步骤中光刻地制造散热器。 磁头制造工艺中的唯一区别是用于产生其中电引线被电镀的电镀沟槽的光刻掩模的修改,并且对掩模的改变涉及在掩模内创建第二开口 在散热器的位置创建电镀沟槽。