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    • 21. 发明申请
    • PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS AND METHODS THEREOF
    • 等离子体处理系统中的等离子体配合结构及其方法
    • US20140007413A1
    • 2014-01-09
    • US14022111
    • 2013-09-09
    • Eric HudsonAndreas Fischer
    • Eric HudsonAndreas Fischer
    • C23C16/00C23F1/00
    • C23C16/00C23F1/00H01J37/32082H01J37/32623
    • A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasmas flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground.
    • 提供了一种制造等离子体处理系统的方法。 该方法包括提供构造成围绕在衬底的处理期间产生的等离子体的可移动等离子体面向结构。 该方法还包括将可移动导电结构设置在可移动等离子体面向结构的外部,其中两个结构构造成作为单个单元展开和缩回以便于处理基板。 可移动导电结构是在等离子体处理期间接地的射频(RF)。 在处理期间,来自等离子体的RF电流在等离子体处理期间通过可移动等离子体面向结构流动到可移动导电结构。 该方法还包括将一组导电带耦合到可移动导电结构。 一组导电带在展开和缩回时容纳可移动的导电结构,同时为RF电流提供一个低阻抗地线路径。
    • 26. 发明授权
    • Plasma-enhanced substrate processing method and apparatus
    • 等离子体增强的基板处理方法和装置
    • US08262847B2
    • 2012-09-11
    • US11618583
    • 2006-12-29
    • Rajinder DhindsaHudson EricAlexei MarakhtanovAndreas Fischer
    • Rajinder DhindsaHudson EricAlexei MarakhtanovAndreas Fischer
    • C23F1/00H01L21/306C23C16/00
    • H01J37/32165H01J37/32091
    • A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
    • 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。 在等离子体处理期间,衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合,从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率。 第二RF信号的相位偏离第一RF信号的相位小于10%的值。 该方法还包括在将第二RF信号提供给上电极的同时处理衬底。