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21. 发明授权

US06952361B2 Volumetric data storage apparatus 失效
标题翻译：体积数据存储装置
公开(公告)号：US06952361B2
公开(公告)日：2005-10-04
申请号：US10395245
申请日：2003-03-25
申请人： Hans Gude Gudesen , Geirr I. Leistad
发明人： Hans Gude Gudesen , Geirr I. Leistad
IPC分类号： H01L27/105 , G11C5/00 , G11C7/00 , G11C8/14 , H01L21/8246 , H01L21/84 , H01L25/065 , H01L27/12 , G11C11/22
CPC分类号： G11C8/14 , G11C11/22 , H01L21/84 , H01L27/12
摘要： In a volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices electrode means are provided so as to form alternating word and bit line means for the memory devices, whereby the number of the electrode means is only one more than the number of memory devices. Moreover adjoining electrode means are arranged in such a manner as to furnish a high proportion of memory cells which can be switched in two or more directions, thus yielding a much higher output when addressed and having an improved signal-to-noise ratio. Each memory device can, due to having a dense electrode arrangement, be provided with an attainable memory cell fill factor approaching unity and half the memory cells can in case be provided switchable in two or more directions, such that the fill factor of these in any case shall approach 0.5. A volumetric data storage apparatus with a very high storage density can hence be obtained, while several of the problems encountered with stacked memory devices are obviated.
摘要翻译：在包括多个堆叠的可矩阵寻址的存储器件的体积数据存储装置中，提供电极装置，以形成用于存储器件的交替字和位线装置，由此，电极装置的数量仅为存储设备。此外，邻接的电极装置被布置成提供可以在两个或更多个方向上切换的高比例的存储器单元，从而当寻址并且具有改善的信噪比时产生高得多的输出。每个存储器件可以由于具有致密的电极布置而具有接近于单位的可实现的存储单元填充因子，并且一半的存储器单元可以在两个或更多个方向上可切换的情况下使得这些存储单元的填充因子在任何情况应接近0.5。因此可以获得具有非常高的存储密度的体积数据存储装置，同时避免堆叠的存储装置遇到的几个问题。

22. 发明授权

US06833593B2 Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter 失效
标题翻译：电极是指其制造方法，包括电极装置的装置以及后者的使用
公开(公告)号：US06833593B2
公开(公告)日：2004-12-21
申请号：US10290524
申请日：2002-11-08
申请人： Hans Gude Gudesen , Geirr I. Leistad
发明人： Hans Gude Gudesen , Geirr I. Leistad
IPC分类号： H01L2976
CPC分类号： H01L27/101 , H01L27/11502 , H01L27/1203
摘要： In an electrode means comprising a first and a second thin-film electrode layers (L1, L2) with electrodes (&egr;) in the form of parallel strip-like electrical conductors in each layer, the electrodes (&egr;) are provided only separated by a thin film (6) of an electrically insulating material with a thickness at most a fraction of the width of the electrodes and at least extending along the side edges thereof and forming an insulating wall (6a) therebetween. The electrode layers (L1, L2) are planarized to obtain an extremely planar surface. In an apparatus comprising one or more electrode means (EM), the electrode layers (L1, L2) of each are mutually oriented with their respective electrodes (1;2) crossing at an angle, preferably orthogonally and with a functional medium (3) provided globally in sandwich therebetween, such that a preferably passive matrix-addressable apparatus is obtained and suited for use as e.g. a matrix-addressable data processing device or matrix-addressable data storage device comprising individually addressable functional elements (5) in the form of e.g. respectively logic cells or memory cells, the fill factor thereof in the global functional medium (3) approaching unity and a maximum number of the cells in the apparatus of approximately A/f2, wherein A is the area of the global functional medium (3) sandwiched between the electrode layers (L1, L2), and f is a process-constrained minimum feature.
摘要翻译：在包括在每层中具有平行条形电导体形式的电极（epsilon）的第一和第二薄膜电极层（L1，L2）的电极装置中，电极（ε）仅由电绝缘材料的薄膜（6），其厚度至多为电极宽度的一部分，并且至少沿其侧边缘延伸并在其间形成绝缘壁（6a）。电极层（L1，L2）被平坦化以获得极其平坦的表面。在包括一个或多个电极装置（EM）的装置中，每个的电极层（L1，L2）彼此相互取向，其各自的电极（1; 2）以一定角度，优选正交地与功能介质（3）交叉，提供全球夹层之间，从而获得优选的无源矩阵寻址装置，并且适合于例如使用矩阵可寻址数据处理设备或矩阵可寻址数据存储设备，其包括单独的可寻址功能元件（5），其形式为例如。分别是接近统一的全局功能介质（3）中的填充因子和大约A / f 2的装置中的最大数量的单元的逻辑单元或存储单元，其中A是全局功能介质的面积（3）夹在电极层（L1，L2）之间，f是工艺约束的最小特征。

23. 发明授权

US07352612B2 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US07352612B2
公开(公告)日：2008-04-01
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

24. 发明授权

US06762950B2 Folded memory layers 失效
标题翻译：折叠内存层
公开(公告)号：US06762950B2
公开(公告)日：2004-07-13
申请号：US10306229
申请日：2002-11-29
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C1122
CPC分类号： G11C11/22 , H01L27/10
摘要： A ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers with stripe-like electrodes forming word lines and bit lines of a matrix-addressable memory array, memory cells are defined in volumes of memeory material in between two crossing word lines and bit lines and a plurality of memory arrays are provided in a stacked arrangement. A stack of memory arrays is formed by tow or more ribbon-like structures, which are folded and/or braided into each other. Each ribbon-like structure includes a flexible substrate of non-conducting material and the electrode layers respectively provided on each surface of the substrate and including the parallel strip-like electrodes extending along the ribbon-like structure. A layer of memory material covers one of the electrode layers whereby each memory array of the stack is formed by overlapping portions of a pair of adjacent ribbon-like structures and crossing in substantially orthogonal relationship.
摘要翻译：具有记忆材料的铁电体或驻极体体积存储装置，其具有在形成矩阵可寻址存储器阵列的字线和位线的带条形电极的第一和第二电极层之间夹层提供的存储器单元，以堆叠的方式设置两个交叉字线和位线以及多个存储器阵列。一叠存储器阵列由丝束状或更多的带状结构形成，这些结构被折叠和/或编织成彼此。每个带状结构包括非导电材料的柔性基板和分别设置在基板的每个表面上并包括沿着带状结构延伸的平行条状电极的电极层。存储器材料层覆盖电极层之一，由此堆叠的每个存储器阵列由一对相邻的带状结构的重叠部分形成，并以基本正交的关系交叉。

25. 发明授权

US06498744B2 Ferroelectric data processing device 失效
标题翻译：铁电数据处理装置
公开(公告)号：US06498744B2
公开(公告)日：2002-12-24
申请号：US09978034
申请日：2001-10-17
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr Ivarsson Leistad
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/0688
摘要： In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent toelectrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.
摘要翻译：在用于处理和/或存储具有无源或电寻址的数据的铁电数据处理装置中，数据承载介质以铁电材料薄膜（1）的形式使用，其通过施加的电场被极化以确定极化状态或在这些之间切换并且以矩阵的形式提供为电极结构中或邻近的连续层。逻辑元件（4）形成在电极矩阵的x电极（2）和y电极（3）之间的相交处。逻辑元件（4）通过向电极（2,3）施加大于铁电材料的矫顽力场的电压来寻址。取决于极化状态和铁电材料的磁滞回线的形式，获得逻辑元件（4）中极化状态的不同检测，并且还可以在逻辑元件的极化状态之间切换，其中因此可以用于实现双稳态开关或存储单元。如果分离的层被电绝缘层分开，则根据本发明的数据处理设备可以层叠堆叠，并且因此用于实现体积数据处理设备。

26. 发明授权

US6052354A Optical data storage medium and method for writing and reading of data 失效
标题翻译：光学数据存储介质和数据写入和读取方法
公开(公告)号：US6052354A
公开(公告)日：2000-04-18
申请号：US981425
申请日：1997-12-23
申请人： Hans Gude Gudesen , Per-Erik Nordal , Rolv M.o slashed.ll Nilsen , Thormod N.ae butted.ringsrud
发明人： Hans Gude Gudesen , Per-Erik Nordal , Rolv M.o slashed.ll Nilsen , Thormod N.ae butted.ringsrud
IPC分类号： G02B5/18 , G11B7/0033 , G11B7/0065 , G11B7/24 , G11C13/04 , G11B7/00
CPC分类号： G11B7/0033 , G11B7/0065 , G11B7/24 , G11C13/04
摘要： In an optical data storage medium with a storage area formed from a transparent, homogenous base material and with a number of optically active structures at one side of the storage area, the optically active structures are diffractive optical elements which can focus a beam of light incident on the storage area on to one or more points in the storage area and/or a redirected beam of light or emitted light radiation from this or these points on to a point outside the optical storage medium. During writing/reading of data in the storage medium, the diffractive optical elements are used for focusing the write/read beam in order to generate a data carrying structure or read data stored in such a data carrying structure, respectively. By exploiting the special optical properties of diffractive optical elements, it is possible to achieve parallel writing/reading of data, possibly in several parallel storage layers in the optical storage medium or randomly distributed therein, the optical storage medium thus providing a genuine volumetric storage and a corresponding genuine volumetric accessing of the stored data.
摘要翻译： PCT No.PCT / NO96 / 00155 Sec。 371 1997年12月23日第 102（e）1997年12月23日PCT PCT 1996年6月24日PCT公布。出版物WO97 / 01171 日期1997年1月9日在具有由透明均质基材形成的存储区域和在存储区域的一侧具有多个光学活性结构的光学数据存储介质中，光学活性结构是可聚焦的衍射光学元件入射到存储区域中的光束到存储区域中的一个或多个点和/或重定向的光束或发射的光辐射从该或这些点到光存储介质外的点。在存储介质中写入/读取数据期间，衍射光学元件用于聚焦写入/读取光束，以便分别产生存储在这种数据承载结构中的数据承载结构或读取数据。通过利用衍射光学元件的特殊光学特性，可以实现数据的并行写入/读取，可能在光存储介质中的几个并行存储层中或随机分布在其中，光学存储介质因此提供真正的容积存储，存储数据的对应的真实容量访问。

27. 发明申请

US20080151609A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20080151609A1
公开(公告)日：2008-06-26
申请号：US12010067
申请日：2008-01-18
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gude Gudesen
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for obviating the effect of disturb voltages in a data storage apparatus employing passive matrix addressing, an application of electric potentials for an addressing operation is according to a voltage pulse protocol. The data storage cells of the apparatus are provided in two or more electrically separated segments each constituting non-overlapping physical address subspaces of the data storage apparatus physical address space. A number of data storage cells in each segment are preset to the same polarization by an active voltage pulse with a specific polarization. In a first addressing operation one or more data storage cells are read by applying an active pulse with the same polarization to each data storage cell and recording the output charge response. On basis thereof the output data in subsequent second addressing operation are copied onto preset data storage cells in another segment of the data storage apparatus, this segment being selected on the basis of its previous addressing history.
摘要翻译：在采用无源矩阵寻址的数据存储装置中避免干扰电压的影响的方法中，用于寻址操作的电位的应用是根据电压脉冲协议。设备的数据存储单元被提供在两个或更多个电隔离的段中，每个段构成数据存储设备物理地址空间的非重叠物理地址子空间。每个段中的多个数据存储单元通过具有特定极化的有源电压脉冲预设为相同的极化。在第一寻址操作中，通过向每个数据存储单元施加具有相同极化的有源脉冲并记录输出电荷响应来读取一个或多个数据存储单元。基于此，随后的第二寻址操作中的输出数据被复制到数据存储装置的另一段中的预定数据存储单元上，该段根据其先前的寻址历史进行选择。

28. 发明授权

US07211885B2 Vertical electrical interconnections in a stack 失效
标题翻译：堆叠中的垂直电气互连
公开(公告)号：US07211885B2
公开(公告)日：2007-05-01
申请号：US10390178
申请日：2003-03-14
申请人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leidstad , Göran Gustafsson , Johan Carlsson
发明人： Per-Erik Nordal , Hans Gude Gudesen , Geirr Ivarsson Leidstad , Göran Gustafsson , Johan Carlsson
IPC分类号： H01L23/02
CPC分类号： H01L24/25 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L2224/24051 , H01L2224/24145 , H01L2224/24146 , H01L2224/24225 , H01L2224/24226 , H01L2224/25175 , H01L2224/76155 , H01L2224/82102 , H01L2225/06524 , H01L2225/06527 , H01L2225/06551 , H01L2225/06555 , H01L2225/06562 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01033 , H01L2924/01055 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/10253 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： In a memory and/or data processing device having at least two stacked layers which are supported by a substrate or forming a sandwiched self-supporting structure, wherein the layers include memory and/or processing circuitry with mutual connections between the layers and/or to circuitry in the substrate, the layers the are mutually arranged such that contiguous layers form a staggered structure on at least one edge of the device and at least one electrical edge conductor is provided passing over the edge on one layer and down one step at a time, enabling the connection to an electrical conductor in any of the following layers in the stack. A method for manufacturing a device of this kind includes the steps for adding the layers successively, one layer at a time, such that the layers form a staggered structure, and for providing one or more layers with at least one electrical contact pad for linking to one or more interlayer edge connectors.
摘要翻译：在具有由衬底支撑或形成夹层自支撑结构的至少两个层叠层的存储器和/或数据处理设备中，其中所述层包括存储器和/或处理电路，所述存储器和/或处理电路具有层之间的相互连接和/或电路在衬底中，这些层被相互布置，使得连续的层在器件的至少一个边缘上形成交错的结构，并且至少一个电气边缘导体被提供在一个层上沿着边缘通过并且一次一个下降，使得能够连接到堆叠中的以下任何层中的电导体。用于制造这种装置的方法包括以下步骤：一次一层地层叠这些层，使得这些层形成交错结构，并且用于提供一层或多层具有至少一个电接触垫，用于连接到一个或多个夹层边缘连接器。

29. 发明授权

US06950330B2 Addressing of memory matrix 有权
公开(公告)号：US06950330B2
公开(公告)日：2005-09-27
申请号：US10934573
申请日：2004-09-07
申请人： Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
发明人： Michael O. Thompson , Per-Erik Nordal , Hans Gude Gudesen , Johan Carlsson , Göran Gustafsson
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.

30. 发明授权

US06841818B2 Non-volatile memory device utilizing dueterated materials 失效
标题翻译：使用二元材料的非易失性存储器件
公开(公告)号：US06841818B2
公开(公告)日：2005-01-11
申请号：US10229178
申请日：2002-08-28
申请人： Hans Gude Gudesen , Per-Erik Nordal
发明人： Hans Gude Gudesen , Per-Erik Nordal
IPC分类号： G11C11/22 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , G11C11/22
摘要： In a non-volatile memory device that includes an electrically polarizable dielectric memory material with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material includes one or more polymers, at least one of these polymers is a deuterated polymer.
摘要翻译：在包括具有铁电或驻极体性质并且能够显示滞后和剩磁的电极化电介质存储材料的非易失性存储器件中，其中所述记忆材料包括一种或多种聚合物，这些聚合物中的至少一种是氘代聚合物。

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