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21. 发明申请

US20060121729A1 Methods for the optimization of ion energy control in a plasma processing system 有权
公开(公告)号：US20060121729A1
公开(公告)日：2006-06-08
申请号：US10745846
申请日：2003-12-23
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/461
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31144 , H01L21/76807
摘要： A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.

22. 发明授权

US06461974B1 High temperature tungsten etching process 有权
标题翻译：高温钨蚀刻工艺
公开(公告)号：US06461974B1
公开(公告)日：2002-10-08
申请号：US09680320
申请日：2000-10-06
申请人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
发明人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , C23F4/00 , H01L21/31116 , H01L21/32136
摘要： A method of etching a tungsten film, comprising the steps of supporting a semiconductor substrate having a tungsten film thereon on a substrate support in an interior of a plasma etcher, supplying process gas to the interior of the plasma etcher, energizing the process gas into a plasma state, etching the tungsten film by exposing the substrate to the plasma, and heating the substrate to a temperature of at least 100° C. during the etching step. The etching step can include a low temperature main etch below 100° C. followed by a high temperature overetch above 100° C., the process gas including a fluorine containing gas during the main etch and a chlorine containing gas during the overetch. The tungsten film can be located over a dielectric film which serves as a stop layer during the etching step. The tungsten film can be pure tungsten and the dielectric layer can be a silicon oxide film having a thickness of 200 Å or less.
摘要翻译：一种蚀刻钨膜的方法，包括以下步骤：在等离子体蚀刻器内部的衬底支撑件上支撑其上具有钨膜的半导体衬底，将工艺气体供给到等离子体蚀刻器的内部，将工艺气体激励成等离子体状态，通过将衬底暴露于等离子体来蚀刻钨膜，并且在蚀刻步骤期间将衬底加热至至少100℃的温度。蚀刻步骤可以包括低于100℃的低温主蚀刻，然后高于100℃的高温过蚀刻，在主蚀刻期间工艺气体包括含氟气体，在过蚀刻期间包括含氯气体。钨膜可以位于在蚀刻步骤期间用作停止层的电介质膜上。钨膜可以是纯钨，并且电介质层可以是厚度为或以下的氧化硅膜。

23. 发明授权

US06400488B1 Light beam scanner 失效
标题翻译：光束扫描仪
公开(公告)号：US06400488B1
公开(公告)日：2002-06-04
申请号：US09669894
申请日：2000-09-27
申请人： Yasushi Nagasaka , Jun Kohsaka , Kenji Takeshita
发明人： Yasushi Nagasaka , Jun Kohsaka , Kenji Takeshita
IPC分类号： G02B2608
CPC分类号： G02B26/12 , G02B26/121
摘要： A polygon mirror is enclosed in an airtight cap that is provided with a polygon window. By having the normal line to the surface of the polygon window tilt a predetermined angle in the main scanning direction with respect to the principal ray of the light beam that is to be applied to the polygon window, the reflected light, which is a part of the light beam reflected by the surface of the polygon window, is not applied to the image forming area of a photoconductive drum.
摘要翻译：多面镜被封闭在设有多边形窗口的气密帽中。通过使多边形窗口的表面的法线相对于要施加到多边形窗口的光束的主光线在主扫描方向上倾斜预定角度，反射光作为由多边形窗口的表面反射的光束不被施加到感光鼓的图像形成区域。

24. 发明授权

US06341030B1 Light beam optical scanner and image forming apparatus 有权
标题翻译：光束光学扫描仪和图像形成装置
公开(公告)号：US06341030B1
公开(公告)日：2002-01-22
申请号：US09613829
申请日：2000-07-11
申请人： Kenji Takeshita , Jun Kohsaka , Yasushi Nagasaka
发明人： Kenji Takeshita , Jun Kohsaka , Yasushi Nagasaka
IPC分类号： G02B2608
CPC分类号： G02B26/125
摘要： In an optical system, the scanning center axis of a scanning lens, the principal ray of a laser beam applied to the scanning lens, and the rotational axis of a polygon mirror are in one plane. By forming a thin film layer on the deflecting facets, the exposure quantity of a photo conductor, which decreases as the incident angle to the deflecting facet increases, is corrected. The thin film layer has the increasing ratio of the reflectance that increases as the incident angle, which principal ray of the laser beam forms with the normal line to the deflecting facet of the polygon mirror, increases.
摘要翻译：在光学系统中，扫描透镜的扫描中心轴，施加到扫描透镜的激光束的主射线和多面镜的旋转轴在一个平面中。通过在偏转小平面上形成薄膜层，校正随着偏转面的入射角度而减小的光导体的曝光量的增加。薄膜层的反射率的比率随着入射角增加而增加，激光束的主光线与多边形反射镜的偏转小面的法线形成。

25. 发明授权

US08936855B2 Wood fiber board and manufacturing method thereof 有权
标题翻译：木纤维板及其制造方法
公开(公告)号：US08936855B2
公开(公告)日：2015-01-20
申请号：US13272335
申请日：2011-10-13
申请人： Makoto Kimuro , Hiromasa Sinkai , Kenji Takeshita
发明人： Makoto Kimuro , Hiromasa Sinkai , Kenji Takeshita
IPC分类号： B32B23/04
CPC分类号： D21J1/18 , Y10T428/249925 , Y10T428/31986
摘要： Provided is a wood fiber board, and a production method thereof, such that the wood fiber board contains no phenolic resin, is simple to produce, and exhibits flexural strength and water resistance comparable to those of wood fiber boards produced by incorporating a phenolic resin. The wood fiber board of the present invention has only wood fibers; a polyacrylamide resin being an amphoteric-ionic resin, which has monomers having cationic groups and monomers having anionic groups at a ratio of 7:3 to 3:7 on a mole ratio basis, and which has a molecular weight ranging from 800,000 to 3,000,000; and cationic paraffin. A method of producing a wood fiber board of the present invention involves preparing a slurry to a solids concentration ranging from 2 to 3 wt % and pH of 3 to 5, and adding only the polyacrylamide resin and paraffin to the slurry.
摘要翻译：本发明提供一种木纤维板及其制造方法，使得木质纤维板不含酚醛树脂，制造简单，并且具有与通过掺入酚醛树脂制造的木纤维板相当的抗弯强度和耐水性。本发明的木纤维板仅具有木纤维; 具有阳离子基团的单体的聚丙烯酰胺树脂和摩尔比为7:3〜3:7的阴离子性基团的单体，分子量为80万〜300万; 和阳离子石蜡。本发明的木纤维板的制造方法包括将浆料制备成固体浓度为2〜3重量％，pH为3〜5，仅将聚丙烯酰胺树脂和石蜡加入到浆料中。

26. 发明授权

US08801892B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US08801892B2
公开(公告)日：2014-08-12
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

27. 发明授权

US08114780B2 Method for dielectric material removal between conductive lines 有权
标题翻译：介电材料去除导线之间的方法
公开(公告)号：US08114780B2
公开(公告)日：2012-02-14
申请号：US12413159
申请日：2009-03-27
申请人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
发明人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76825 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/7682 , H01L21/76826
摘要： A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
摘要翻译：提供了一种在金属触点之间去除碳掺杂的氧化硅的方法。通过去除碳掺杂剂将碳掺杂的氧化硅层转化为氧化硅层。相对于碳掺杂的氧化硅和在金属触点之间形成凹陷的金属触点，氧化硅的转换层被选择性地湿蚀刻。

28. 发明申请

US20100248485A1 METHOD FOR DIELECTRIC MATERIAL REMOVAL BETWEEN CONDUCTIVE LINES 有权
标题翻译：导电线之间的电介质材料去除方法
公开(公告)号：US20100248485A1
公开(公告)日：2010-09-30
申请号：US12413159
申请日：2009-03-27
申请人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
发明人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
IPC分类号： H01L21/306
CPC分类号： H01L21/76825 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/7682 , H01L21/76826
摘要： A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
摘要翻译：提供了一种在金属触点之间去除碳掺杂的氧化硅的方法。通过去除碳掺杂剂将碳掺杂的氧化硅层转化为氧化硅层。相对于碳掺杂的氧化硅和在金属触点之间形成凹陷的金属触点，氧化硅的转换层被选择性地湿蚀刻。

29. 发明申请

US20090068767A1 TUNING VIA FACET WITH MINIMAL RIE LAG 审中-公开
标题翻译：通过最小的RIE LAG调整
公开(公告)号：US20090068767A1
公开(公告)日：2009-03-12
申请号：US11854038
申请日：2007-09-12
申请人： Stephen Sirard , Mikio Nagai , Kenji Takeshita , Sridharan Srivatsan , Jungmin Ko
发明人： Stephen Sirard , Mikio Nagai , Kenji Takeshita , Sridharan Srivatsan , Jungmin Ko
IPC分类号： H01L21/00
CPC分类号： H01L21/76804 , H01L21/76807 , H01L22/12 , H01L22/20
摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.
摘要翻译：提供了一种设计蚀刻配方的方法。执行蚀刻，包括提供具有设定的卤素与碳的比例的蚀刻气体，从蚀刻气体形成等离子体，以及蚀刻通过过孔的沟槽。测量通过面。卤素与碳的比例根据测量的通孔面重置，其中如果测量太多的小面积，则卤素与碳的比例将增加，并且如果测量的面积太小，则卤素与碳的比率降低。重复前面的步骤，直到获得所需的刻面数量。

30. 发明申请

US20070199658A1 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US20070199658A1
公开(公告)日：2007-08-30
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： B08B6/00 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

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