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21. 发明授权

US06805728B2 Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream 失效
标题翻译：用于从半导体制造工艺流出物流中减少有毒气体组分的方法和装置
公开(公告)号：US06805728B2
公开(公告)日：2004-10-19
申请号：US10314727
申请日：2002-12-09
申请人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander , Luping Wang
发明人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander , Luping Wang
IPC分类号： B01D5304
CPC分类号： B01D53/0407 , B01D2253/10 , B01D2253/112 , B01D2253/304 , B01D2257/2022 , B01D2257/2025 , B01D2257/2027 , B01D2257/204 , B01D2257/2042 , B01D2257/2045 , B01D2257/2047 , B01D2257/206 , B01D2257/406 , B01D2257/70 , B01D2258/0216 , B01D2259/4146
摘要： An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, Co3O4, ZnO, MnO2 and mixtures thereof.
摘要翻译：一种用于从源自半导体制造工艺的流出物流中减轻至少一种酸或氢气体组分或其副产物的装置和方法，包括：具有对酸或氢化物气体具有高容量吸附剂亲和性的第一吸附剂床材料组分，具有对相同气体组分的高捕获率吸附剂亲和力的第二和离散的吸附剂床材料，以及将流程连接到与吸附剂床材料气流连通的流路，使得流出物流过吸附剂床，以减少酸或氢气组分。第一吸附剂床材料优选包含碱式碳酸铜，第二吸附剂床优选包含CuO，AgO，CoO，Co 3 O 4，ZnO，MnO 2及其混合物中的至少一种。

22. 发明授权

US08389068B2 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
标题翻译：使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成
公开(公告)号：US08389068B2
公开(公告)日：2013-03-05
申请号：US12913757
申请日：2010-10-27
申请人： W. Karl Olander , Jose I. Arno , Robert Kaim
发明人： W. Karl Olander , Jose I. Arno , Robert Kaim
IPC分类号： C23C14/48 , C23C14/06 , H01L21/04 , H01L21/425 , C23C14/16
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/082 , H01L21/26513 , H01L21/2658
摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
摘要翻译：使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

23. 发明申请

US20110259366A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：US20110259366A1
公开(公告)日：2011-10-27
申请号：US12867245
申请日：2009-02-11
申请人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号： B08B7/00 , H01L21/265 , B08B5/00
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
摘要翻译：使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分，通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻。还描述了使用诸如XeFx，WFx，AsFx，PFx和TaFx的反应性气体，其中x具有化学计量学上适当的值或值范围，用于清除离子注入器或植入物的组分的原位或非原生境清洁布置，在环境温度，升高的温度或等离子体条件下。在特定的反应性清洁剂中，BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法，包括使所述前沿与清洁气体接触，其中所述清洁气体与所述沉积物化学反应。还描述了改进离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

24. 发明授权

US07943204B2 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation 有权
标题翻译：使用替代氟化硼前体的硼离子注入，以及用于植入的大的硼氢化物的形成
公开(公告)号：US07943204B2
公开(公告)日：2011-05-17
申请号：US12065503
申请日：2006-08-30
申请人： W. Karl Olander , Jose I. Arno , Robert Kaim
发明人： W. Karl Olander , Jose I. Arno , Robert Kaim
IPC分类号： C23C14/48 , H01L21/425 , C23C16/48
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/082 , H01L21/26513 , H01L21/2658
摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
摘要翻译：使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

25. 发明授权

US09383064B2 Ventilation gas management systems and processes 有权
标题翻译：通风天然气管理系统和流程
公开(公告)号：US09383064B2
公开(公告)日：2016-07-05
申请号：US13522000
申请日：2011-01-11
申请人： W. Karl Olander , Paul J. Marganski
发明人： W. Karl Olander , Paul J. Marganski
IPC分类号： B01D53/02 , F17C13/08 , F17C11/00 , B01D53/04
CPC分类号： F24F11/04 , B01D53/04 , B01D2253/102 , B01D2258/0216 , F17C11/00 , F17C11/005 , F17C11/007 , F17C13/084 , F17C2201/0109 , F17C2201/032 , F17C2201/056 , F17C2205/0111 , F17C2205/0126 , F17C2205/0142 , F17C2205/0176 , F17C2205/018 , F17C2205/0338 , F17C2205/0394 , F17C2250/032 , F17C2250/043 , F17C2250/0439 , F17C2250/0469 , F17C2250/0491 , F17C2250/0636 , F17C2260/044 , F17C2270/0518 , F24F11/0012 , F24F11/30 , F24F11/74 , F24F2011/0042 , F24F2110/10 , F24F2110/40 , Y02P80/156
摘要： A ventilation gas management system and process for an enclosure adapted to contain fluid supply vessel(s) and through which ventilation gas is flowed to provide safe operation in the event of leakage of fluid from a vessel. Ventilation gas flow is modulated to accommodate various hazard levels associated with the deployment and operation of such enclosure containing fluid supply vessel(s), e.g., a gas box or gas cabinet in a semiconductor manufacturing facility, thereby achieving reduction in ventilation gas requirements otherwise required for such deployment and operation.
摘要翻译：一种通风气体管理系统和适用于容纳流体供应容器的外壳的过程，并且在流体从容器泄漏的情况下通过该通气气体流动以提供安全的操作。调节通风气流以适应与包含流体供应容器（例如半导体制造设备中的气体箱或气体柜）的这种外壳的展开和操作相关的各种危险水平，从而实现另外需要的通气气体需求的减少用于此类部署和操作。

26. 发明授权

US07364603B2 Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream 失效
标题翻译：用于从半导体制造工艺流出物流中减少有毒气体组分的方法和装置
公开(公告)号：US07364603B2
公开(公告)日：2008-04-29
申请号：US10928977
申请日：2004-08-27
申请人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander
发明人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander
IPC分类号： B01D53/04 , B01D53/68 , B01D59/26
CPC分类号： B01D53/0415 , B01D53/0407 , B01D2253/10 , B01D2253/102 , B01D2253/104 , B01D2253/108 , B01D2253/112 , B01D2253/25 , B01D2253/304 , B01D2253/3425 , B01D2257/202 , B01D2257/2022 , B01D2257/2025 , B01D2257/2027 , B01D2257/204 , B01D2257/2042 , B01D2257/2045 , B01D2257/2047 , B01D2257/206 , B01D2257/302 , B01D2257/406 , B01D2257/553 , B01D2257/70 , B01D2257/706 , B01D2258/0216 , B01D2259/40086 , B01D2259/4143 , B01D2259/4146
摘要： An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, CO3O4, ZnO, MnO2 and mixtures thereof.
摘要翻译：一种用于从源自半导体制造工艺的流出物流中减轻至少一种酸或氢气体组分或其副产物的装置和方法，包括：具有对酸或氢化物气体具有高容量吸附剂亲和性的第一吸附剂床材料组分，具有对相同气体组分的高捕获率吸附剂亲和力的第二和离散的吸附剂床材料，以及将流程连接到与吸附剂床材料气流连通的流路，使得流出物流过吸附剂床，以减少酸或氢气组分。第一吸附剂床材料优选包含碱式碳酸铜，第二吸附剂床优选包含CuO，AgO，CoO，CO 3 O 4，ZnO，MnO 2＆lt; 2＆gt;及其混合物。

27. 发明授权

US06845619B2 Integrated system and process for effluent abatement and energy generation 有权
标题翻译：污水排放和能源生成的综合系统和流程
公开(公告)号：US06845619B2
公开(公告)日：2005-01-25
申请号：US10316577
申请日：2002-12-11
申请人： W. Karl Olander
发明人： W. Karl Olander
IPC分类号： B01D53/00 , B01D53/86 , F02C6/10 , H01M8/06 , H01M8/22 , F01K25/06
CPC分类号： F02C6/10 , B01D53/002 , B01D53/8634 , B01D2257/108 , B01D2257/708 , H01M8/0606 , H01M8/0662 , H01M8/0687 , H01M8/222
摘要： The present invention relates to an effluent abatement/energy generation system, as well as a method, for abating a process effluent gas stream that contains one or more target compounds such as hydrogen gas, ammonia gas, isopropanol, and other volatile organic compounds that are readily oxidizable, and for concurrently generating energy using such process effluent gas stream. Such effluent abatement/energy generation system comprises a purification unit for removing components other than such target compounds from the process effluent gas stream, and an energy generation unit for generating thermal and/or electrical energy. Such energy generation unit may comprise a combustion assembly, such as a microturbine, for direct combustion or catalytic combustion of the target compounds to generate thermal and/or electrical energy. Such energy generation unit may also comprise a fuel cell for using the target compounds to generate electrical energy.
摘要翻译：本发明涉及一种污水消除/能量产生系统，以及一种用于减轻含有一种或多种目标化合物如氢气，氨气，异丙醇和其它挥发性有机化合物的工艺废气流的方法，易于氧化，并且使用这种工艺废气流同时产生能量。这种污水消除/能量产生系统包括用于从工艺废气流中除去除了这些目标化合物之外的组分的净化单元和用于产生热能和/或电能的能量产生单元。这种能量产生单元可以包括燃烧组件，例如微型涡轮机，用于目标化合物的直接燃烧或催化燃烧以产生热能和/或电能。这种能量产生单元还可以包括用于使用目标化合物产生电能的燃料电池。

28. 发明授权

US06517594B2 Air management system and method for chemical containment and contamination reduction in a semiconductor manufacturing facility 失效
公开(公告)号：US06517594B2
公开(公告)日：2003-02-11
申请号：US09806798
申请日：2001-04-04
申请人： W. Karl Olander , Bruce G. Walker
发明人： W. Karl Olander , Bruce G. Walker
IPC分类号： B01D4600
CPC分类号： H01L21/6715 , B01D53/74 , F24F3/161 , F24F2007/001 , H01L21/67017 , Y10S55/18 , Y10S55/29
摘要： An air manager and/or chemical containment apparatus, for environmental control of fumes from wet bench units of semiconductor manufacturing facilities. The air manager system is suitable for installation in an open architecture wet bench or an enclosed mini-environment wet bench, and includes an air source and an air exhaust arranged for flowing air across an open chemical tank, to entrain fumes from chemical in the tank that otherwise may migrate from the immediate vicinity of the tank, and transport such fumes to the exhaust with the air flowed from the air source to the exhaust. The chemical containment apparatus includes: (1) a thin film member including at least one solid portion and at least one cut-out portion; (2) a first scroll member positioned at one side of the thin film member for rotatorily moving the thin film member; (3) a motive driver operatively connected to the first scroll member for rotating the first scroll member; and (4) optionally, a second scroll member positioned at the other side of said thin film member for rotatorily receiving said thin film in synchrony with movement of the first scroll member.

29. 发明申请

US20110065268A1 BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 有权
标题翻译：使用替代性氟化硼前体的硼离子植入和形成用于植入的大量硼氢化合物
公开(公告)号：US20110065268A1
公开(公告)日：2011-03-17
申请号：US12913757
申请日：2010-10-27
申请人： W. Karl Olander , Jose I. Arno , Robert Kaim
发明人： W. Karl Olander , Jose I. Arno , Robert Kaim
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/082 , H01L21/26513 , H01L21/2658
摘要： Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
摘要翻译：使用比三氟化硼更容易裂解的含氟含硼掺杂剂物质注入含硼离子的方法。一种制造半导体器件的方法，包括使用比三氟化硼更容易切割的氟化含硼掺杂物物种注入含硼离子。还公开了用于提供硼氢化物前体的体系，以及形成硼氢化物前体的方法和用于供应硼氢化物前体的方法。在本发明的一个实施方案中，为了制造半导体产品例如集成电路，产生用于簇硼注入的硼氢化物前体。

30. 发明申请

US20080220596A1 Delivery of Low Pressure Dopant Gas to a High Voltage Ion Source 审中-公开
标题翻译：将低压掺杂气体输送到高电压离子源
公开(公告)号：US20080220596A1
公开(公告)日：2008-09-11
申请号：US12065471
申请日：2006-08-29
申请人： W. Karl Olander , Jose I. Arno , Robert Kaim
发明人： W. Karl Olander , Jose I. Arno , Robert Kaim
IPC分类号： H01L21/265 , H01J37/317 , H01J37/08
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3172 , H01J2237/0203
摘要： A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.
摘要翻译：一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度相对于气体的电离电位的低压气体，抑制气体流路中的电离。

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