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21. 发明授权

US07920246B2 LCD device including semiconductor of nano material and method for fabricating the same 有权
标题翻译：包括纳米材料的半导体的LCD装置及其制造方法
公开(公告)号：US07920246B2
公开(公告)日：2011-04-05
申请号：US11286951
申请日：2005-11-22
申请人： Gee Sung Chae
发明人： Gee Sung Chae
IPC分类号： G02F1/136 , B05D5/12 , H01L21/00 , G02F1/13
CPC分类号： H01L27/12 , G02F1/1368 , H01L27/1292 , H01L29/04 , H01L29/78696
摘要： An LCD device and a method for fabricating the same are disclosed. The LCD device includes a substrate having a pixel region. A gate electrode is formed in the pixel region. A gate insulating film is formed on the substrate including the gate electrode. A conducting layer is formed on the substrate including the gate insulating film. A semiconductor layer containing a nanosemiconductor material is formed on the conducting layer above the gate electrode. Source and drain electrodes overlap opposing sides of the semiconductor layer. A passivation layer is formed on the substrate including the source and drain electrodes. A first contact hole in the passivation layer exposes the drain electrode. A pixel electrode in the pixel region is connected to the drain electrode through the first contact hole.
摘要翻译：公开了一种LCD装置及其制造方法。 LCD装置包括具有像素区域的基板。在像素区域中形成栅电极。在包括栅电极的基板上形成栅极绝缘膜。在包括栅极绝缘膜的基板上形成导电层。在栅电极上的导电层上形成含有纳米半导体材料的半导体层。源电极和漏电极与半导体层的相对侧重叠。在包括源极和漏极的衬底上形成钝化层。钝化层中的第一接触孔露出漏电极。像素区域中的像素电极通过第一接触孔连接到漏电极。

22. 发明授权

US07858014B2 Apparatus for fabricating flat panel display device method of fabricating the same and method of fabricating flat panel display device using the same 有权
标题翻译：用于制造平板显示装置的方法及其制造方法的装置及使用其的平板显示装置的制造方法
公开(公告)号：US07858014B2
公开(公告)日：2010-12-28
申请号：US11477783
申请日：2006-06-30
申请人： Gee Sung Chae , Gyoo Chul Jo , Jin Wuk Kim , Chang Hee Lee
发明人： Gee Sung Chae , Gyoo Chul Jo , Jin Wuk Kim , Chang Hee Lee
IPC分类号： B29C59/00
CPC分类号： B29C59/026 , B29C43/021 , B29L2011/0016 , G02F1/13394
摘要： An apparatus for fabricating a flat panel display device includes a device that applies a flowable material on a substrate; a soft mold having a base surface, a groove part recessed in relation to the base surface, and a protruding part protruding from the base surface, the soft mold applying a pressure on the flowable material for forming a multi-stepped profile pattern in the flowable material.
摘要翻译：一种用于制造平板显示装置的装置包括：将可流动材料施加在基板上的装置; 具有基面的软模，相对于基面凹陷的槽部和从基面突出的突出部，软模对可流动材料施加压力，以形成可流动的多级轮廓图案材料。

23. 发明授权

US07817218B2 Method of manufacturing a liquid crystal device utilizing a liquid organic semiconductor for the active layer 有权
标题翻译：制造利用有机层的液体有机半导体的液晶装置的方法
公开(公告)号：US07817218B2
公开(公告)日：2010-10-19
申请号：US11293079
申请日：2005-12-05
申请人： Gee Sung Chae
发明人： Gee Sung Chae
IPC分类号： G02F1/136 , H01L51/40
CPC分类号： G02F1/1362 , G02F1/136286 , G02F2001/136231 , H01L27/1248 , H01L27/1288
摘要： An LCD device and a method for fabricating the same is disclosed that improves a yield by decreasing processing time. The LCD device includes gate and data lines formed substantially perpendicular to each other on a substrate and defining a unit pixel region; a thin film transistor formed at a crossing of the gate and data lines; an active layer formed over the gate line, the data line, and the thin film transistor; an organic resin formed on a portion of a gate insulating layer not including the gate line, the data line, and the thin film transistor; a passivation layer formed on an entire surface of the substrate including the thin film transistor; and a pixel electrode, formed in the unit pixel region, the pixel electrode being connected with a drain electrode of the thin film transistor.
摘要翻译：公开了一种LCD装置及其制造方法，其通过减少处理时间来提高产量。 LCD装置包括在基板上基本上彼此垂直地形成并限定单位像素区域的栅极和数据线; 形成在栅极和数据线的交叉处的薄膜晶体管; 形成在栅极线，数据线和薄膜晶体管上的有源层; 形成在不包括栅极线，数据线和薄膜晶体管的栅极绝缘层的一部分上的有机树脂; 形成在包括所述薄膜晶体管的所述基板的整个表面上的钝化层; 以及形成在所述单位像素区域中的像素电极，所述像素电极与所述薄膜晶体管的漏电极连接。

24. 发明授权

US07515215B2 Array substrate for liquid crystal display substrate having high aperture ratio and method for fabricating the same 有权
公开(公告)号：US07515215B2
公开(公告)日：2009-04-07
申请号：US10730133
申请日：2003-12-09
申请人： Gee Sung Chae , Jae Kyun Lee , Ik Soo Kim
发明人： Gee Sung Chae , Jae Kyun Lee , Ik Soo Kim
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F1/133512
摘要： An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common line and the protrusion of the common line, a passivation layer formed on the gate insulation layer to cover the data line, the source and drain electrodes, and the first capacitor electrode, the passivation layer having a first contact hole exposing a portion of the capacitor electrode, and a pixel electrode formed on the passivation layer and contacting the first capacitor electrode through the first contact hole.

25. 发明授权

US07420213B2 Thin film transistor array substrate having main gate insulating film formed of organic material and sub gate insulating film formed of ferroelectric material and fabricating method thereof 有权
标题翻译：具有由有机材料形成的主栅极绝缘膜和由铁电材料形成的子栅极绝缘膜的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07420213B2
公开(公告)日：2008-09-02
申请号：US11410212
申请日：2006-04-25
申请人： Gee Sung Chae , Jae Seok Heo
发明人： Gee Sung Chae , Jae Seok Heo
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/4908 , H01L27/124
摘要： A thin film transistor array substrate is provided. The thin film transistor array substrate includes a substrate; a gate pattern of a gate electrode and a gate line connected to the gate electrode on the substrate; a main gate insulating film formed of an organic material to cover the gate pattern; a semiconductor pattern overlapping the gate line such that the main gate insulating film is disposed between semiconductor patter and the gate line; a source/drain pattern on the semiconductor pattern. The source/drain pattern has a data line crossing the gate line with the main gate insulating film therebetween, a source electrode and a drain electrode, Here, the source electrode, the drain electrode and the semiconductor pattern define a thin film transistor disposed at the intersection between the gate line and the data line. The thin film transistor array substrate further includes a protective film defining a contact hole at a portion of the drain electrode; a pixel electrode contacting the drain electrode through the contact hole; and a sub gate insulating pattern disposed between the gate pattern and the main gate insulating film overlapping the gate pattern. The sub gate insulating pattern includes a ferroelectric material.
摘要翻译：提供薄膜晶体管阵列基板。薄膜晶体管阵列基板包括基板; 栅电极的栅极图案和与基板上的栅电极连接的栅极线; 由有机材料形成以覆盖栅极图案的主栅极绝缘膜; 半导体图案与栅极线重叠，使得主栅极绝缘膜设置在半导体图案和栅极线之间; 半导体图案上的源极/漏极图案。源极/漏极图案具有与栅极线与主栅极绝缘膜交叉的数据线，源电极和漏电极。这里，源电极，漏电极和半导体图案限定了设置在栅极线与数据线之间的交点。薄膜晶体管阵列基板还包括限定漏电极的一部分处的接触孔的保护膜; 通过所述接触孔与所述漏电极接触的像素电极; 以及设置在与栅极图案重叠的栅极图案和主栅极绝缘膜之间的子栅极绝缘图案。子栅绝缘图案包括铁电材料。

26. 发明申请

US20080191617A1 Organic light emitting diode device and method of manufacturing the same 有权
标题翻译：有机发光二极管装置及其制造方法
公开(公告)号：US20080191617A1
公开(公告)日：2008-08-14
申请号：US12005620
申请日：2007-12-28
申请人： Gee Sung Chae , Sung Hee Kim , Tae Han Park
发明人： Gee Sung Chae , Sung Hee Kim , Tae Han Park
IPC分类号： B05D5/12 , H01J1/63
CPC分类号： H01L51/0059 , H01L51/005 , H01L51/0072 , H01L51/5048 , H01L51/5088 , H01L2251/308 , Y10S428/917
摘要： An organic light emitting diode device includes an organic layer formed of a hole transport material or a hole injection material having a photocurable group. Therefore, the organic light emitting diode device can be formed using a wet process that is simple and can be used for a large substrate. Furthermore, the organic layer and an organic light emitting layer are less affected by a solvent,. Thus, the lifespan of the organic light emitting diode device is increased and there is more freedom in selecting materials for the organic layer and the organic light emitting layer. A method of manufacturing the organic light emitting diode device is also disclosed.
摘要翻译：有机发光二极管装置包括由空穴传输材料形成的有机层或具有光固化性基团的空穴注入材料。因此，可以使用简单的湿法可以形成有机发光二极管器件，并且可以用于大的衬底。此外，有机层和有机发光层较少受溶剂的影响。因此，有机发光二极管器件的寿命增加，并且在选择有机层和有机发光层的材料方面有更大的自由度。还公开了一种制造有机发光二极管器件的方法。

27. 发明授权

US07387971B2 Fabricating method for flat panel display device 有权
标题翻译：平板显示装置的制造方法
公开(公告)号：US07387971B2
公开(公告)日：2008-06-17
申请号：US11260393
申请日：2005-10-28
申请人： Gee Sung Chae , Mi Kyung Park
发明人： Gee Sung Chae , Mi Kyung Park
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/124 , H01L27/1292
摘要： A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns over areas outside where thin film patterns are to be formed over the substrate. The fabricating method also includes depositing a hydrophobic nano powder thin film material over the substrate and between the hydrophilic resin patterns and removing the hydrophilic resin patterns to form hydrophobic nano powder thin film patterns over the substrate. Moreover, the fabricating method includes treating the hydrophobic nano powder thin film patterns to form the thin film pattern.
摘要翻译：公开了一种在衬底上具有薄膜图形的平板显示装置的制造方法。该制造方法包括在衬底上沉积亲水性树脂并且图案化亲水树脂以在要在衬底上形成薄膜图案的区域外的区域上形成亲水性树脂图案。该制造方法还包括在衬底上和亲水性树脂图案之间沉积疏水性纳米粉末薄膜材料并除去亲水性树脂图案以在衬底上形成疏水性纳米粉末薄膜图案。此外，制造方法包括处理疏水性纳米粉末薄膜图案以形成薄膜图案。

28. 发明授权

US07365820B2 In-plane switching mode liquid crystal display device and method of fabricating the same 有权
标题翻译：面内切换模式液晶显示装置及其制造方法
公开(公告)号：US07365820B2
公开(公告)日：2008-04-29
申请号：US10878535
申请日：2004-06-29
申请人： Gee Sung Chae , Yun Bok Lee
发明人： Gee Sung Chae , Yun Bok Lee
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2201/122
摘要： A liquid crystal display device includes first and second common electrode lines on a substrate extending along a first direction, a pair of adjacent data lines extending along a second direction perpendicular to the first direction to cross the first and second common electrode lines to define a unit pixel region, a gate line extending between the first and second common electrode lines along the first direction and crossing the pair of adjacent data lines, the first and second common electrode lines spaced apart from the gate line by a first distance along the second direction defining a first pixel region and a second pixel region of the unit pixel region, and a thin film transistor formed at the crossing of the gate line and one of the pair of adjacent data lines, the thin film transistor including a pair of drain electrodes, a source electrode, and a portion of the gate line, wherein each of the first and second pixel regions includes a circular pixel electrode and first and second circular common electrodes.
摘要翻译：液晶显示装置包括沿着第一方向延伸的基板上的第一和第二公共电极线，沿着垂直于第一方向的第二方向延伸的一对相邻数据线，以横穿第一和第二公共电极线以限定单元像素区域，沿着第一方向在第一和第二公共电极线之间延伸并与该对相邻数据线交叉的第一和第二公共电极线，沿着第二方向与栅极线隔开第一距离的栅极线限定所述单位像素区域的第一像素区域和第二像素区域以及形成在所述栅极线与所述一对相邻数据线中的一个之间的交叉处的薄膜晶体管，所述薄膜晶体管包括一对漏极电极，源电极和栅极线的一部分，其中第一和第二像素区域中的每一个包括圆形像素电极和第一和第二 d圆形公共电极。

29. 发明授权

US07170571B2 Liquid crystal display device with double metal layer source and drain electrodes and fabricating method thereof 有权
标题翻译：具有双金属层源漏电极的液晶显示装置及其制造方法
公开(公告)号：US07170571B2
公开(公告)日：2007-01-30
申请号：US10028768
申请日：2001-12-28
申请人： Gee Sung Chae
发明人： Gee Sung Chae
IPC分类号： G02F1/136
CPC分类号： G02F1/1368
摘要： A liquid crystal display device including a substrate; a gate electrode over the substrate; a first semiconductor layer over the substrate, and a source electrode and a drain electrode over the first semiconductor layer. The source and drain electrodes having a first metal layer and a second metal layer formed in a same pattern and a defining a separation between the source electrode and drain electrode.
摘要翻译：一种液晶显示装置，包括：基板; 在该衬底上的栅电极; 在所述衬底上的第一半导体层，以及在所述第一半导体层上的源电极和漏电极。源电极和漏电极具有形成为相同图案的第一金属层和第二金属层，并且限定了源电极和漏电极之间的间隔。

30. 发明授权

US06337292B1 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby 有权
公开(公告)号：US06337292B1
公开(公告)日：2002-01-08
申请号：US09430037
申请日：1999-10-29
申请人： Kwang Nam Kim , Gee Sung Chae
发明人： Kwang Nam Kim , Gee Sung Chae
IPC分类号： C23C1650
CPC分类号： H01J37/32082 , C23C16/402 , C23C16/5096 , H01J37/32165 , H01J37/32183 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L29/66757 , Y10S438/931
摘要： The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

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