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21. 发明申请

US20070148855A1 Phase change memory device and fabricating method therefor 失效
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20070148855A1
公开(公告)日：2007-06-28
申请号：US11479497
申请日：2006-06-30
申请人： Wei-Su Chen , Yi-Chan Chen , Wen-Han Wang , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Min-Hung Lee
发明人： Wei-Su Chen , Yi-Chan Chen , Wen-Han Wang , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Min-Hung Lee
IPC分类号： H01L21/8244 , H01L21/8238 , H01L21/00 , H01L21/20
CPC分类号： H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.
摘要翻译：提供了一种相变存储器件及其制造方法。盘状相变层被埋在绝缘材料内。通过光刻形成中心通孔和环形通孔。中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

22. 发明申请

US20070120105A1 Lateral phase change memory with spacer electrodes and method of manufacturing the same 失效
标题翻译：具有间隔电极的侧向相变存储器及其制造方法
公开(公告)号：US20070120105A1
公开(公告)日：2007-05-31
申请号：US11435276
申请日：2006-05-17
申请人： Te-Sheng Chao , Wen-Han Wang , Min-Hung Lee , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
发明人： Te-Sheng Chao , Wen-Han Wang , Min-Hung Lee , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.
摘要翻译：提供了具有间隔电极的横向相变存储器及其制造方法。存储器通过以较低的电阻率连接导电电极和具有较高电阻率的间隔电极而形成，并且填充间隔电极之间的相变材料。因此，可以减少相变材料与间隔电极接触的面积和相变材料的体积; 从而降低了相变存储器的编程电流和功耗。

23. 发明授权

US09014063B2 TDD wireless communication system and method for reporting HARQ-ACK 有权
标题翻译： TDD无线通信系统和用于报告HARQ-ACK的方法
公开(公告)号：US09014063B2
公开(公告)日：2015-04-21
申请号：US13565766
申请日：2012-08-02
申请人： Chien-Min Lee
发明人： Chien-Min Lee
IPC分类号： H04W72/04 , H04L1/18 , H04L1/00
CPC分类号： H04L1/1861 , H04L2001/0096
摘要： A method for reporting Hybrid Automatic Repeat Request Acknowledgement (HARQ-ACK) is provided. The method is applicable to a time-division duplex (TDD) wireless communication system and includes the following steps: receiving downlink information from a base station with multiple serving cells, calculating a report number of each serving cell, which is a number of subframes of the corresponding serving cell whose acknowledgements have to be reported, and providing report information to the base station in an uplink subframe of a serving cell specified by the base station. The multiple serving cells use multiple uplink-downlink configurations. The report number of at least one of the serving cells is determined according to a downlink association set of the uplink subframe of the serving cell specified by the base station. The report information includes the acknowledgements that have to be reported by each of the serving cells.
摘要翻译：提供了一种用于报告混合自动重传请求确认（HARQ-ACK）的方法。该方法适用于时分双工（TDD）无线通信系统，包括以下步骤：从具有多个服务小区的基站接收下行链路信息，计算每个服务小区的报告号码，其为多个子帧必须报告其确认的相应服务小区，并且在由基站指定的服务小区的上行链路子帧中向基站提供报告信息。多个服务小区使用多个上行链路 - 下行链路配置。根据由基站指定的服务小区的上行链路子帧的下行链路关联集来确定至少一个服务小区的报告号码。报告信息包括必须由每个服务小区报告的确认。

24. 发明申请

US20130051289A1 METHOD AND APPARATUS FOR SOFT BUFFER PARTITIONING IN TIME-DIVISION DUPLEXING SYSTEM 有权
标题翻译：用于软件缓冲区在时分双工系统中的方法和装置
公开(公告)号：US20130051289A1
公开(公告)日：2013-02-28
申请号：US13551614
申请日：2012-07-18
申请人： Chia-Wen Hsieh , Chien-Min Lee
发明人： Chia-Wen Hsieh , Chien-Min Lee
IPC分类号： H04J3/00 , H04W72/04
CPC分类号： H04L1/1845 , H04L1/1822
摘要： A method for partitioning a soft buffer in a time-division duplex system and an apparatus using the same are disclosed. The method includes the following steps. A total number of soft channel bits, a maximum number of transport blocks transmittable to a user equipment (UE) in a transmission time interval (TTI), a maximum number of downlink (DL) hybrid automatic retransmit request (HARQ) processes, and a configured maximum number of HARQ processes are determined. A partition size of the soft buffer is selected according at least to the total number of soft channel bits, the maximum number of transport blocks transmittable to the UE in the TTI, the maximum number of DL HARQ processes, and the preconfigured maximum number of HARQ processes.
摘要翻译：公开了一种用于对时分双工系统中的软缓冲器进行分区的方法及其使用方法。该方法包括以下步骤。软通道位的总数，在传输时间间隔（TTI）中传输到用户设备（UE）的最大数量的传输块，最大数量的下行链路（DL）混合自动重传请求（HARQ）处理和确定配置的最大数量的HARQ进程。软缓冲器的分区大小至少根据软信道比特的总数，在TTI中可传送给UE的最大传输块数，DL HARQ进程的最大数目和预先配置的HARQ最大数量进行选择过程。

25. 发明申请

US20130034029A1 TDD WIRELESS COMMUNICATION SYSTEM AND METHOD FOR REPORTING HARQ-ACK 有权
标题翻译： TDD无线通信系统和用于报告HARQ-ACK的方法
公开(公告)号：US20130034029A1
公开(公告)日：2013-02-07
申请号：US13565766
申请日：2012-08-02
申请人： Chien-Min Lee
发明人： Chien-Min Lee
IPC分类号： H04J3/00
CPC分类号： H04L1/1861 , H04L2001/0096
摘要： A method for reporting Hybrid Automatic Repeat Request Acknowledgement (HARQ-ACK) is provided. The method is applicable to a time-division duplex (TDD) wireless communication system and includes the following steps: receiving downlink information from a base station with multiple serving cells, calculating a report number of each serving cell, which is a number of subframes of the corresponding serving cell whose acknowledgements have to be reported, and providing report information to the base station in an uplink subframe of a serving cell specified by the base station. The multiple serving cells use multiple uplink-downlink configurations. The report number of at least one of the serving cells is determined according to a downlink association set of the uplink subframe of the serving cell specified by the base station. The report information includes the acknowledgements that have to be reported by each of the serving cells.
摘要翻译：提供了一种用于报告混合自动重传请求确认（HARQ-ACK）的方法。该方法适用于时分双工（TDD）无线通信系统，包括以下步骤：从具有多个服务小区的基站接收下行链路信息，计算每个服务小区的报告号码，其为多个子帧必须报告其确认的相应服务小区，并且在由基站指定的服务小区的上行链路子帧中向基站提供报告信息。多个服务小区使用多个上行链路 - 下行链路配置。根据由基站指定的服务小区的上行链路子帧的下行链路关联集来确定至少一个服务小区的报告号码。报告信息包括必须由每个服务小区报告的确认。

26. 发明申请

US20110312150A1 PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20110312150A1
公开(公告)日：2011-12-22
申请号：US13219568
申请日：2011-08-26
申请人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
发明人： Chien-Min Lee , Ming-Jeng Huang , Jen-Chi Chuang , Jia-Yo Lin , Min-Chih Wang
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
摘要翻译：提供一种相变存储器件，包括：衬底，设置在衬底上的第一电介质层，设置在第一电介质层中的第一电极，形成在第一电介质层上的第二电介质层，覆盖第一电极;加热电极设置在所述第二电介质层中，与所述第一电极接触，设置在所述第二电介质层上方的与所述加热电极接触的相变材料层和设置在所述相变材料层上的第二电极。在一个实施例中，加热电极包括接触第一电极的第一部分和与相变材料层接触的第二部分，加热电极的第二部分包括金属硅化物，加热电极的第一部分不包括金属硅化物。

27. 发明授权

US07626191B2 Lateral phase change memory with spacer electrodes 失效
标题翻译：具有间隔电极的侧向相变记忆
公开(公告)号：US07626191B2
公开(公告)日：2009-12-01
申请号：US11435276
申请日：2006-05-17
申请人： Te-Sheng Chao , Wen-Han Wang , Min-Hung Lee , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
发明人： Te-Sheng Chao , Wen-Han Wang , Min-Hung Lee , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Yi-Chan Chen , Wei-Su Chen
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.
摘要翻译：提供了具有间隔电极的横向相变存储器及其制造方法。存储器通过以较低的电阻率连接导电电极和具有较高电阻率的间隔电极而形成，并且填充间隔电极之间的相变材料。因此，可以减少相变材料与间隔电极接触的面积和相变材料的体积; 从而降低了相变存储器的编程电流和功耗。

28. 发明申请

US20090194759A1 PHASE CHANGE MEMORY DEVICE 有权
标题翻译：相变存储器件
公开(公告)号：US20090194759A1
公开(公告)日：2009-08-06
申请号：US12189087
申请日：2008-08-08
申请人： Tsung-Shune Chin , Chin-Fu Kao , Ming-Jinn Tsai , Chien-Min Lee
发明人： Tsung-Shune Chin , Chin-Fu Kao , Ming-Jinn Tsai , Chien-Min Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of GaxTeySbz, 5
摘要翻译：公开了一种相变存储器件，包括衬底，衬底上的相变层，电连接相变层的第一侧的第一电极，电连接相变层的第二侧的第二电极，其中，相变层主要由镓（Ga），锑（Sb）和碲（Te）和不可避免的杂质构成，其组成范围为GaxTeySbz，5

29. 发明授权

US07538043B2 Phase change memory device and fabrication method thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07538043B2
公开(公告)日：2009-05-26
申请号：US11615909
申请日：2006-12-22
申请人： Chien-Min Lee
发明人： Chien-Min Lee
IPC分类号： H01L21/31
CPC分类号： H01L45/1675 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
摘要翻译：一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是披露

30. 发明申请

US20090078926A1 PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090078926A1
公开(公告)日：2009-03-26
申请号：US12328745
申请日：2008-12-04
申请人： Chien-Min Lee
发明人： Chien-Min Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
摘要翻译：一种相变存储器件，包括电极，在其交叉区域交叉并接触电极的相变层和包括源极和漏极的晶体管，其中晶体管的漏极电连接电极或相变层是披露

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