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21. 发明授权

US06534775B1 Electrostatic trap for particles entrained in an ion beam 失效
标题翻译：用于夹带在离子束中的颗粒的静电捕集器
公开(公告)号：US06534775B1
公开(公告)日：2003-03-18
申请号：US09654380
申请日：2000-09-01
申请人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
发明人： Eric R. Harrington , Victor M. Benveniste , Michael A. Graf , Robert D. Rathmell
IPC分类号： H01J3730
CPC分类号： H01J37/3171 , H01J3/40 , H01J37/026 , H01J37/3002 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
摘要翻译：用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。

22. 发明授权

US6135128A Method for in-process cleaning of an ion source 失效
标题翻译：离子源过程中清洗方法
公开(公告)号：US6135128A
公开(公告)日：2000-10-24
申请号：US49642
申请日：1998-03-27
申请人： Michael A. Graf , Victor M. Benveniste
发明人： Michael A. Graf , Victor M. Benveniste
IPC分类号： H01J27/02 , C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01L21/265 , B08B3/12 , C23F1/02 , G01N21/01 , H01J27/00
CPC分类号： H01J37/3171 , H01J27/04 , H01J37/08 , H01J2237/022 , H01J2237/061
摘要： A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
摘要翻译：提供了一种用于在过程中清洁离子源（12）的方法和系统。离子源（12）包括（i）由结合电离区（120）的室壁（112,114,116）形成的等离子体室（22）; （ii）可电离掺杂剂气体源（66）和用于将所述可电离掺杂剂气体引入所述等离子体室的第一机构（68）（iii）用于将所述清洁气体引入所述等离子体室的清洁气体源（182）和第二机构（184）; 和（iv）至少部分地设置在所述腔室内的激励器（130），用于向所述可电离掺杂剂气体和所述清洁气体赋予能量以在所述等离子体腔室内产生等离子体。所述等离子体包括所述掺杂气体的分离和离子化成分以及所述清洁气体的解离和离子化成分。所述清洁气体的分离和离子化的组分与所述掺杂剂气体的所述分离和离子化的组分反应，以防止在所述室壁的表面上形成包含在所述可电离掺杂剂气体内的元素沉积物。清洁气体可以是例如三氟化氮（NF 3），并且可电离掺杂剂气体可以是例如磷化氢（PH 3）或胂（AsH 3）。质量流量控制器控制导入所述等离子体室的清洁气体与可离子化掺杂剂气体的比例大于0:1，优选至少3:1。

23. 发明授权

US5821677A Ion source block filament with laybrinth conductive path 失效
标题翻译：离子源块灯丝具有下桥导电路径
公开(公告)号：US5821677A
公开(公告)日：1998-10-13
申请号：US760714
申请日：1996-12-05
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： C23C14/48 , H01J1/16 , H01J9/02 , H01J9/04 , H01J27/08 , H01J37/08 , H01J37/317 , H01L21/265 , H01J17/26 , H01J61/28
CPC分类号： H01J9/04 , H01J1/16 , H01J27/08 , H01J37/08
摘要： A filament plate for an ion beam source assembly of an ion implantation apparatus is disclosed. The filament plate is comprised of tungsten and includes two spaced apart spiral slits through a width of the plate. A gap width of the slits in not substantially greater than ten times a plasma Debye length of ions generated by electrons emitted into an arc chamber. The plate filament is disposed in an arc chamber into which ionizable source materials are injected. The plate includes two conductive posts press fit into openings of the plate for heating the plate to the thermionic emission temperature. The conductive posts extend through insulated openings in a side wall of the arc chamber.
摘要翻译：公开了一种用于离子注入装置的离子束源组件的灯丝板。灯丝板由钨组成，并且包括穿过板的宽度的两个间隔开的螺旋狭缝。狭缝的间隙宽度基本上不大于发射到电弧室中的电子产生的离子的等离子体德拜长度的十倍。板状灯丝设置在电弧室中，可注射的可电离源材料。该板包括压配合到板的开口中的两个导电柱，用于将板加热到热离子发射温度。导电柱延伸通过电弧室的侧壁中的绝缘开口。

24. 发明授权

US5736743A Method and apparatus for ion beam formation in an ion implanter 失效
公开(公告)号：US5736743A
公开(公告)日：1998-04-07
申请号：US696122
申请日：1996-08-13
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： C23C14/48 , H01J37/05 , H01J37/317 , H01L21/265 , H01J49/30
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/14
摘要： A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.

25. 发明授权

US4914305A Uniform cross section ion beam system 失效
标题翻译：均匀横截面离子束系统
公开(公告)号：US4914305A
公开(公告)日：1990-04-03
申请号：US293334
申请日：1989-01-04
申请人： Victor M. Benveniste , Raymond P. Boisseau
发明人： Victor M. Benveniste , Raymond P. Boisseau
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3172
摘要： An ion beam implant system having a source for producing multiple beamlets. The beamlets are emitted from the source and their intensity is controlled by an electrode array under control of a control apparatus. Downstream from the electrode array a resolving magnet shapes the beamlets and directs them to a region where they undergo further acceleration before impinging upon a workpiece. In a preferred technique, the workpiece is typically a silicon wafer and the ions are utilized for controlled doping of that wafer without need for ion beam scanning to selected portions of the workpiece or wafer movement through the ion beam during implantation.

26. 发明授权

US4672210A Ion implanter target chamber 失效
标题翻译：离子注入机靶室
公开(公告)号：US4672210A
公开(公告)日：1987-06-09
申请号：US772237
申请日：1985-09-03
申请人： Allen E. Armstrong , Victor M. Benveniste , Geoffrey Ryding
发明人： Allen E. Armstrong , Victor M. Benveniste , Geoffrey Ryding
IPC分类号： H01L21/265 , H01J37/317 , H01L21/00 , H01J37/00
CPC分类号： H01L21/67011 , H01J37/3171
摘要： A target chamber for a mechanically scanned ion implanter in which semiconductor wafers are maintained in contact with a rotating target disk entirely by body forces, thus eliminating the need for clamping members contacting the wafer surface. The axis of the disk is inclined, and the disk is in the form of a shallow dish having an inclined rim with cooled wafer-receiving stations formed on the inner surface of the rim. Centrifugal force is relied on to force the wafers against the cooled disk. Each wafer-receiving station includes fence structures which are engaged by the wafer during loading and when the disk is spinning. The fence structures are resilient so that wafer damage and thus particulate contamination is minimized. In accordance with another aspect of the invention the ion beam is projected against the wafers obliquely to the radius of the disk as to minimize striping effects and overscan.
摘要翻译：用于机械扫描离子注入机的目标室，其中半导体晶片通过体力保持与旋转目标盘保持接触，从而消除了与晶片表面接触的夹紧构件的需要。盘的轴线倾斜，并且盘是具有倾斜边缘的浅盘的形式，其中冷却的晶片接收站形成在边缘的内表面上。依靠离心力将晶片压在冷却盘上。每个晶片接收站包括在加载期间和当盘旋转时由晶片接合的栅栏结构。栅栏结构具有弹性，使得晶片损坏和因此的颗粒污染被最小化。根据本发明的另一方面，离子束相对于盘的半径倾斜地抵靠晶片，以最小化条纹效应和过扫描。

27. 发明授权

US4303860A High resolution radiation detector 失效
标题翻译：高分辨率辐射探测器
公开(公告)号：US4303860A
公开(公告)日：1981-12-01
申请号：US61739
申请日：1979-07-30
申请人： Paul J. Bjorkholm , Victor M. Benveniste
发明人： Paul J. Bjorkholm , Victor M. Benveniste
IPC分类号： G01N23/04 , A61B6/00 , A61B6/03 , G01N23/08 , G01T1/164 , G01T1/20 , G21K4/00 , H01J37/244 , G01T1/24
CPC分类号： G01T1/2018 , G01T1/1644
摘要： A high resolution detector having a scintillation crystal for receiving incident X-rays at a front face and interacting with the radiation to generate corresponding visible light radiation. Silicon photodiode arrays are positioned on top and bottom lateral faces of the scintillation crystal to receive the visible light that is radiated laterally with respect to the direction of propagation of the incident X-rays. Photodiode elements in each photodiode array extend from the forward face of the scintillation crystal in the direction of propagation of the incident X-rays. The length of the photodiode elements determines the radiation stopping power of the high resolution detector and the height of the front face of the scintillation crystal determines the resolution of the detector. The height of the forward face of the crystal may be made small with respect to the length of the photodiode elements to provide a detector having high resolution and high radiation stopping power.
摘要翻译：一种具有闪烁晶体的高分辨率检测器，用于在正面接收入射的X射线并与辐射相互作用以产生相应的可见光辐射。硅光电二极管阵列位于闪烁晶体的顶部和底部侧面上以接收相对于入射X射线的传播方向横向辐射的可见光。每个光电二极管阵列中的光电二极管元件在闪烁晶体的前面沿着入射X射线的传播方向延伸。光电二极管元件的长度决定了高分辨率检测器的辐射阻止能力，并且闪烁晶体的正面的高度决定了检测器的分辨率。相对于光电二极管元件的长度，可以使晶体的正面的高度较小，以提供具有高分辨率和高辐射阻止能力的检测器。

28. 发明授权

US07723707B2 Techniques for plasma injection 有权
标题翻译：等离子体注入技术
公开(公告)号：US07723707B2
公开(公告)日：2010-05-25
申请号：US11781700
申请日：2007-07-23
申请人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
发明人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译：公开了用于离子束空间电荷中和的等离子体注入技术。在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上离子束路径的一侧，第一侧与第二侧相对。第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

29. 发明申请

US20090314932A1 TECHNIQUES FOR MEASURING ION BEAM EMITTANCE 有权
标题翻译：测量离子束发射的技术
公开(公告)号：US20090314932A1
公开(公告)日：2009-12-24
申请号：US12141570
申请日：2008-06-18
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： G12B13/00
CPC分类号： H01J37/3171
摘要： Techniques for measuring ion beam emittance are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring ion beam emittance. The apparatus may comprise a measurement assembly comprising a first mask, a second mask, and a pivot axis, such that the measurement assembly rotates about the pivot axis in order to scan an ion beam using either the first mask or the second mask to measure ion beam emittance for providing a measure of ion beam uniformity.
摘要翻译：公开了用于测量离子束发射率的技术。在一个特定的示例性实施例中，可以将技术实现为用于测量离子束发射率的装置。该装置可以包括包括第一掩模，第二掩模和枢转轴线的测量组件，使得测量组件围绕枢转轴线旋转，以便使用第一掩模或第二掩模来扫描离子束以测量离子光束发射率，用于提供离子束均匀性的测量。

30. 发明授权

US07598495B2 Methods and systems for trapping ion beam particles and focusing an ion beam 有权
标题翻译：用于捕获离子束粒子并聚焦离子束的方法和系统
公开(公告)号：US07598495B2
公开(公告)日：2009-10-06
申请号：US11739934
申请日：2007-04-25
申请人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
发明人： Peter L. Kellerman , Victor M. Benveniste , Alexander S. Perel , Brian S. Freer , Michael A. Graf
IPC分类号： H01J3/18
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/022 , H01J2237/049
摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
摘要翻译：一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压，其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

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