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    • 21. 发明授权
    • Method of making a thin film merged MR head with aligned pole tips
    • 制造薄膜的方法将具有对准极尖的MR头并入
    • US5438747A
    • 1995-08-08
    • US208398
    • 1994-03-09
    • Mohamad T. KrounbiJyh-Shuey J. LoChing H. TsangRobert M. Valletta
    • Mohamad T. KrounbiJyh-Shuey J. LoChing H. TsangRobert M. Valletta
    • G11B5/31G11B5/39
    • G11B5/3967G11B5/3116G11B5/3163Y10T29/49048
    • A merged MR head is provided which has vertically aligned sidewalls so as to minimize side-fringing and improve off-track performance. The bottom pole piece P1, which comprises the second shield layer S2 of the read head, has a pedestal pole tip with a short length dimension. A pedestal pole tip with a length as short as two times the length of the gap layer G optimally minimizes the sidewriting and improves off-track performance. The bottom pole tip structure of the write head is constructed by ion beam milling using the top pole tip structure as a mask. The ion beam milling is directed at an angle to the sidewalls of the top pole tip structure which causes the bottom pole tip structure to be milled with sidewalls which align with the top pole tip structure. The ion beam milling can comprise two angled beams, either sequentially or simultaneously, the first beam performing primarily a cutting operation and some clean up work while the second beam primarily conducts clean up work of the redeposition of the debris caused by the cutting. In another embodiment, a single angled ion beam can be employed, provided its angle is within a particular range.
    • 提供了具有垂直对齐的侧壁的合并的MR头,以便使边缘最小化并且提高离轨性能。 包括读取头的第二屏蔽层S2的底极片P1具有短长度尺寸的基座极头。 长度短到间隙层G的长度的两倍的基座极尖最优化了笔迹的最小化并改善了离轨性能。 写头的底极尖端结构是通过使用顶极尖端结构作为掩模的离子束铣削构成的。 离子束铣削与顶极尖端结构的侧壁成一角度地引导,这导致底极尖端结构被与顶极尖端结构对准的侧壁铣削。 离子束铣削可以包括两个成角度的梁,顺序地或同时地,第一梁主要执行切割操作和一些清理工作,而第二梁主要进行由切割引起的碎片的再沉积的清理工作。 在另一个实施例中,只要其角度在特定范围内即可使用单角度离子束。
    • 24. 发明授权
    • Magnetoresistive read transducer having patterned orientation of
longitudinal bias
    • 具有纵向偏置的图案取向的磁阻读取传感器
    • US4785366A
    • 1988-11-15
    • US71491
    • 1987-07-09
    • Mohamad T. KrounbiOtto Voegeli
    • Mohamad T. KrounbiOtto Voegeli
    • G11B5/39
    • G11B5/398G11B5/399
    • A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the passive regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with and continuously covering a thin film of soft magnetic material which extends across the transducer assembly. The longitudinal bias is developed by exchange coupling between the thin film of antiferromagnetic material and both the MR layer and the thin film of soft magnetic material in the passive regions. However, the thin film of soft magnetic material is separated from the MR layer in the active region only of the MR layer by a decoupling layer which interrupts the exchange coupling so that transverse bias is produced only in the active region upon connection of a bias source to conductor leads which are connected to the MR layer within the passive region. The transverse bias is produced in that part of the active region of the MR layer in which the bias/sense current and the decoupling layer are both present. Upon connection of a signal sensing means to the conductor leads, an output signal is sensed which detects resistance changes in the MR layer as a function of the fields which are intercepted by the MR layer.
    • 25. 发明授权
    • Magnetoresistive read transducer
    • 磁阻读取传感器
    • US4713708A
    • 1987-12-15
    • US926076
    • 1986-10-31
    • Mohamad T. KrounbiOtto Voegeli
    • Mohamad T. KrounbiOtto Voegeli
    • G11B5/39G11B5/30
    • G11B5/3903
    • A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact only in the end regions of the MR layer and a thin film of soft magnetic material which extends across the transducer assembly. The longitudinal bias is developed by exchange coupling between the thin film of antiferromagnetic material and both the MR layer and the thin film of soft magnetic material in the end regions. However, the thin film of soft magnetic material is separated from the MR layer in the central region only of the MR layer by a decoupling layer which interrupts the exchange coupling so that transverse bias is produced only in the central region upon connection of a bias source to conductor leads which are connected to the MR layer within the end region. The transverse bias is produced in that part of the central region of the MR layer in which the bias current and the decoupling layer are both present. Upon connection of a signal sensing means to the conductor leads, an output signal is sensed which detects resistance changes in the MR layer as a function of the fields which are intercepted by the MR layer.
    • 一种磁阻(MR)读取换能器组件,其中薄膜MR层仅通过由反铁磁性材料薄膜所形成的交换偏压仅在端部区域纵向偏置,该薄膜仅在MR层的端部区域直接接触而沉积, 软磁材料的薄膜延伸穿过换能器组件。 纵向偏置是通过反铁磁性材料薄膜与末端区域的MR层和软磁性材料薄膜之间的交换耦合而形成的。 然而,软磁性材料的薄膜仅通过解耦层与MR层的中心区域中的MR层分离,所述解耦层中断了交换耦合,使得仅在连接偏压源时在中心区域产生横向偏压 连接到端部区域内的MR层的导体引线。 在偏置电流和去耦层都存在的MR层的中心区域的那部分产生横向偏压。 当信号感测装置连接到导体引线时,检测输出信号,其检测MR层中的电阻变化作为由MR层截取的场的函数。
    • 29. 发明授权
    • Self-servo writing a disk drive by propagating interleaved sets of timing clocks and servo bursts during alternate time intervals
    • 通过在交替时间间隔期间传播交错的定时时钟和伺服脉冲串来自动伺服写入磁盘驱动器
    • US06600620B1
    • 2003-07-29
    • US09541136
    • 2000-03-31
    • Mohamad T. KrounbiJohn CudaJack M. ChueRobert Leslie ClokeDavid Price TurnerGary L. Dunbar
    • Mohamad T. KrounbiJohn CudaJack M. ChueRobert Leslie ClokeDavid Price TurnerGary L. Dunbar
    • G11B2102
    • G11B5/59644
    • The present invention may be regarded as a self-servo writing disk drive comprising a head having a read element radially offset from a write element. During a first time interval, the read element is positioned over a first radial location to read first A clock data to generate first circumferential timing information and first A servo bursts to generate first position control information. The first position control information is used for positioning the write element over a second radial location, and the first circumferential timing information is used for writing second B clock data and second B servo bursts to the second radial location. During a second time interval, the read element is positioned over the first radial location to read first B clock data to generate second circumferential timing information and first B servo bursts to generate second position control information. The second position control information is used for positioning the write element over the second radial location, and the second circumferential timing information is used for writing second A clock data and second A servo bursts to the second radial location.
    • 本发明可以被认为是包括具有从写入元件径向偏移的读取元件的头的自伺服写入盘驱动器。 在第一时间间隔期间,读取元件位于第一径向位置上以读取第一A时钟数据以产生第一周期定时信息和第一A伺服脉冲串以产生第一位置控制信息。 第一位置控制信息用于在第二径向位置定位写元件,并且第一周期定时信息用于将第二B时钟数据和第二B伺服脉冲串写入第二径向位置。 在第二时间间隔期间,读取元件位于第一径向位置上以读取第一B时钟数据以产生第二周期定时信息和第一B伺服突发,以产生第二位置控制信息。 第二位置控制信息用于将写元件定位在第二径向位置上,并且第二周期定时信息用于将第二A时钟数据和第二A伺服脉冲串写入第二径向位置。
    • 30. 发明授权
    • Magnetoresistive read head with back filled gap insulation layers
    • 磁阻读头与后填充间隙绝缘层
    • US5617277A
    • 1997-04-01
    • US589813
    • 1996-01-22
    • Mao-Min ChenMohamad T. Krounbi
    • Mao-Min ChenMohamad T. Krounbi
    • G01R33/09G01R33/06G11B5/31G11B5/39H01L43/08H01L43/12
    • G11B5/3929G11B5/3103
    • A magnetic disk storage system with high linear resolution magnetoresistive (MR) head or heads comprising a dielectric substrate, a first magnetic shield, a first gap insulation layer, an MR stripe element, conductive leads, a second gap insulation layer, and a second magnetic shield. Back-fill layers of insulation material are deposited on the first gap insulation layer adjacent the MR element and/or on the second gap insulation layer in thicknesses substantially sufficient to at least in part replace insulation material removed during the various processing steps to ensure against short circuiting of the MR element. The MR element preferably is a trilayer comprising a soft MR sensing layer biased at an acute angle to the lengthwise dimension of the element but free to rotate therefrom according to the magnitude and direction of applied magnetic field; a soft magnetic or hard magnetic layer with magnetization fixed in a direction perpendicular to the lengthwise direction of the MR element; and a spacer layer separating these two layers.
    • 一种具有高线性分辨率磁阻(MR)磁头或磁头的磁盘存储系统,包括电介质基板,第一磁屏蔽,第一间隙绝缘层,MR条形元件,导电引线,第二间隙绝缘层和第二磁 屏蔽。 绝缘材料的填充层沉积在与MR元件相邻的第一间隙绝缘层和/或第二间隙绝缘层上,其厚度基本上足以至少部分地替代在各种加工步骤期间去除的绝缘材料,以确保短时间 MR元件的回路。 MR元件优选是三层,其包括根据所施加的磁场的大小和方向以与该元件的纵向尺寸成锐角倾斜的柔性MR感测层,但可自由旋转; 软磁性或硬磁性层,其磁化方向固定在与MR元件的长度方向垂直的方向上; 以及分隔这两层的间隔层。