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21. 发明授权

US06403485B1 Method to form a low parasitic capacitance pseudo-SOI CMOS device 有权
标题翻译：形成低寄生电容伪SOI CMOS器件的方法
公开(公告)号：US06403485B1
公开(公告)日：2002-06-11
申请号：US09846177
申请日：2001-05-02
申请人： Elgin Quek , Ravi Sundaresan , Yang Pan , James Lee Yong Meng , Ying Keung , Yelehanka Ramachandramurthy Pradeep , Jia Zhen Zheng , Lap Chan
发明人： Elgin Quek , Ravi Sundaresan , Yang Pan , James Lee Yong Meng , Ying Keung , Yelehanka Ramachandramurthy Pradeep , Jia Zhen Zheng , Lap Chan
IPC分类号： H01L21302
CPC分类号： H01L21/76895
摘要： A method of forming a pseudo-SOI device having elevated source/drain (S/D) regions that can be extended for use as local interconnect is described. Shallow trench isolation (STI) regions separating adjacent active regions are provided within a semiconductor substrate. Polysilicon gate electrodes and associated SID extensions are fabricated in and on the substrate in the active regions wherein a hard mask layer overlies each of the gate electrodes. Dielectric spacers are formed on sidewalls of each of the gate electrodes. A polysilicon layer is deposited overlying the gate electrodes and the substrate. The polysilicon layer is polished back with a polish stop at the hard mask layer. The polysilicon layer is etched back whereby the polysilicon layer is recessed with respect to the gate electrodes. Thereafter, the polysilicon layer is etched away overlying the STI regions where a separation between adjacent active areas is desired. If a local interconnect is desired between adjacent active areas, the polysilicon layer is not etched away overlying the STI region separating those active areas. The hard mask layer is removed. Ions are implanted and driven in to form elevated S/D regions within the polysilicon layer adjacent to the gate electrodes to complete formation of transistors having elevated S/D regions.
摘要翻译：描述了一种形成具有可扩展的用于局部互连的源/漏（S / D）区域较高的伪SOI器件的方法。分离相邻有源区的浅沟槽隔离（STI）区域设置在半导体衬底内。多晶硅栅极电极和相关的SID延伸部分在其中硬掩模层覆盖每个栅极电极的有源区域内和衬底上制造。在每个栅电极的侧壁上形成电介质间隔物。沉积覆盖栅电极和衬底的多晶硅层。在硬掩模层上用抛光光阑抛光多晶硅层。多晶硅层被回蚀，由此多晶硅层相对于栅电极凹陷。此后，将多晶硅层蚀刻掉，覆盖STI区域，其中期望相邻的有源区域之间的间隔。如果在相邻的有源区域之间需要局部互连，则多晶硅层不会被覆盖在分离这些有源区域的STI区域之上。去除硬掩模层。离子被植入和驱动以在与栅电极相邻的多晶硅层内形成升高的S / D区，以完成具有升高的S / D区的晶体管的形成。

22. 发明授权

US06566208B2 Method to form elevated source/drain using poly spacer 失效
公开(公告)号：US06566208B2
公开(公告)日：2003-05-20
申请号：US09912607
申请日：2001-07-25
申请人： Yang Pan , Lee Yong Meng , Leung Ying Keung , Yelehanka Ramachandramurthy Pradeep , Jia Zhen Zheng , Lap Chan , Elgin Quek , Ravi Sundarensan
发明人： Yang Pan , Lee Yong Meng , Leung Ying Keung , Yelehanka Ramachandramurthy Pradeep , Jia Zhen Zheng , Lap Chan , Elgin Quek , Ravi Sundarensan
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L21/2257 , H01L29/41775 , H01L29/41783 , H01L29/665 , H01L29/6656
摘要： A method for forming a sub-quarter micron MOSFET having an elevated source/drain structure is described. A gate electrode is formed over a gate dielectric on a semiconductor substrate. Ions are implanted into the semiconductor substrate to form lightly doped regions using the gate electrode as a mask. Thereafter, dielectric spacers are formed on sidewalls of the gate electrode. A polysilicon layer is deposited overlying the semiconductor substrate, gate electrode, and dielectric spacers wherein the polysilicon layer is heavily doped. The polysilicon layer is etched back to leave polysilicon spacers on the dielectric spacers. Dopant is diffused from the polysilicon spacers into the semiconductor substrate to form source and drain regions underlying the polysilicon spacers. The polysilicon spacer on an end of the gate electrode is removed to separate the polysilicon spacers into a source polysilicon spacer and a drain polysilicon spacer thereby completing formation of a MOSFET having an elevated source/drain structure in the fabrication of an integrated circuit device.

23. 发明授权

US06544824B1 Method to form a vertical transistor by first forming a gate/spacer stack, then using selective epitaxy to form source, drain and channel 失效
标题翻译：通过首先形成栅/间隔堆叠形成垂直晶体管的方法，然后使用选择性外延形成源极，漏极和沟道
公开(公告)号：US06544824B1
公开(公告)日：2003-04-08
申请号：US10038390
申请日：2002-01-03
申请人： Yelehanka Pradeep , Jia Zhen Zheng , Lap Chan , Elgin Quek , Ravi Sundaresan , Yang Pan , James Lee Yong Meng , Ying Keung
发明人： Yelehanka Pradeep , Jia Zhen Zheng , Lap Chan , Elgin Quek , Ravi Sundaresan , Yang Pan , James Lee Yong Meng , Ying Keung
IPC分类号： H01L2100
CPC分类号： H01L29/66666
摘要： A method of manufacturing a vertical transistor. A doped region is formed in a substrate. We form sequentially on the substrate: a first spacer dielectric layer, a first gate electrode, a second spacer dielectric layer, a second gate electrode and a third spacer dielectric layer. A trench is formed through the first spacer dielectric layer, the first gate electrode, the second spacer dielectric layer, the second gate electrode and the third spacer dielectric layer. The trench has sidewalls. A gate dielectric layer is formed over the sidewalls of the trench. We form sequentially, in the trench: a first doped layer, a first channel layer, a second doped layer, a third doped layer, a second channel layer, and a fourth doped layer. A cap layer is formed over the structure. Contacts are preferably formed to the doped region, doped layers and gate electrodes.
摘要翻译：一种垂直晶体管的制造方法。在衬底中形成掺杂区域。我们在衬底上依次形成：第一间隔电介质层，第一栅电极，第二间隔电介质层，第二栅电极和第三间隔电介质层。通过第一间隔电介质层，第一栅电极，第二间隔电介质层，第二栅电极和第三间隔电介质层形成沟槽。沟槽有侧壁。栅极电介质层形成在沟槽的侧壁上。我们在沟槽中依次形成：第一掺杂层，第一沟道层，第二掺杂层，第三掺杂层，第二沟道层和第四掺杂层。在该结构上形成盖层。触点优选地形成于掺杂区域，掺杂层和栅电极。

24. 发明授权

US5742088A Process having high tolerance to buried contact mask misalignment by using a PSG spacer 失效
标题翻译：通过使用PSG间隔物对掩埋接触掩模未对准具有高耐受性的工艺
公开(公告)号：US5742088A
公开(公告)日：1998-04-21
申请号：US837486
申请日：1997-04-18
申请人： Yang Pan , Lap Chan , Ravi Sundaresan
发明人： Yang Pan , Lap Chan , Ravi Sundaresan
IPC分类号： H01L21/74 , H01L29/08 , H01L27/11 , H01L29/40
CPC分类号： H01L21/743
摘要： A new method of forming improved buried contact junctions is described. A layer of polysilicon overlying gate silicon oxide is provided over the surface of a semiconductor substrate and etched away to provide an opening to the substrate where a planned buried contact junction will be formed. A second doped polysilicon layer and a tungsten silicide layer are deposited and patterned to provide gate electrodes and a contact overlying the planned buried contact junction and providing an opening to the substrate where a planned source/drain region will be formed adjoining the planned buried contact junction and wherein a portion of the polysilicon layer not at the polysilicon contact remains as residue. The residue is etched away whereby a trench is etched into the substrate at the junction of the planned source/drain region and the planned buried contact junction. A doped glasseous layer is deposited overlying the patterned tungsten silicide/polysilicon layer and within the trench, then isotropically etched away until it remains only partially filling the trench. The substrate is oxidized to drive-in dopant from the doped glasseous layer within the trench into the surrounding substrate. Ions are implanted to form the planned source/drain region. Dopant is outdiffused from the second polysilicon layer to form the planned buried contact junction wherein the dopant surrounding the trench provides a conduction channel between the source/drain region and the adjoining buried contact junction.
摘要翻译：描述了形成改进的埋入接点的新方法。在半导体衬底的表面上提供覆盖栅极氧化硅的多晶硅层，并被蚀刻掉以提供到衬底的开口，其中将形成预定的埋入接触结。第二掺杂多晶硅层和硅化钨层被沉积并图案化以提供栅极电极和覆盖在计划的埋入接触结上的触点，并提供到衬底的开口，其中将形成预定的源极/漏极区域邻接计划的埋入接触结并且其中不在多晶硅接触处的多晶硅层的一部分保留为残留物。残留物被蚀刻掉，由此在规划的源极/漏极区域和计划的埋入接触结的接合处将沟槽蚀刻到衬底中。在图案化的硅化钨/多晶硅层上并在沟槽内沉积掺杂的硅酸盐层，然后各向同性地蚀刻掉，直到其仅部分地填充沟槽。衬底被氧化成驱动掺杂剂从沟槽内的掺杂的玻璃质层进入周围的衬底。植入离子以形成规划的源/漏区。掺杂剂从第二多晶硅层向外扩散以形成计划的埋入接触结，其中围绕沟槽的掺杂剂在源极/漏极区域和相邻的掩埋接触结点之间提供导电沟道。

25. 发明授权

US5652152A Process having high tolerance to buried contact mask misalignment by using a PSG spacer 失效
标题翻译：通过使用PSG间隔物对掩埋接触掩模未对准具有高耐受性的工艺
公开(公告)号：US5652152A
公开(公告)日：1997-07-29
申请号：US636086
申请日：1996-04-22
申请人： Yang Pan , Lap Chan , Ravi Sundaresan
发明人： Yang Pan , Lap Chan , Ravi Sundaresan
IPC分类号： H01L21/74 , H01L21/441
CPC分类号： H01L21/743
摘要： A new method of forming improved buried contact junctions is described. A layer of polysilicon overlying gate silicon oxide is provided over the surface of a semiconductor substrate and etched away to provide an opening to the substrate where a planned buried contact junction will be formed. A second doped polysilicon layer and a tungsten silicide layer are deposited and patterned to provide gate electrodes and a contact overlying the planned buried contact junction and providing an opening to the substrate where a planned source/drain region will be formed adjoining the planned buried contact junction and wherein a portion of the polysilicon layer not at the polysilicon contact remains as residue. The residue is etched away whereby a trench is etched into the substrate at the junction of the planned source/drain region and the planned buried contact junction. A doped glasseous layer is deposited overlying the patterned tungsten silicide/polysilicon layer and within the trench, then isotropically etched away until it remains only partially filling the trench. The substrate is oxidized to drive-in dopant from the doped glasseous layer within the trench into the surrounding substrate. Ions are implanted to form the planned source/drain region. Dopant is outdiffused from the second polysilicon layer to form the planned buried contact junction wherein the dopant surrounding the trench provides a conduction channel between the source/drain region and the adjoining buried contact junction.
摘要翻译：描述了形成改进的埋入接点的新方法。在半导体衬底的表面上提供覆盖栅极氧化硅的多晶硅层，并被蚀刻掉以提供到衬底的开口，其中将形成预定的埋入接触结。第二掺杂多晶硅层和硅化钨层被沉积并图案化以提供栅极电极和覆盖在计划的埋入接触结上的触点，并提供到衬底的开口，其中将形成预定的源极/漏极区域邻接计划的埋入接触结并且其中不在多晶硅接触处的多晶硅层的一部分保留为残留物。残留物被蚀刻掉，由此在规划的源极/漏极区域和计划的埋入接触结的接合处将沟槽蚀刻到衬底中。在图案化的硅化钨/多晶硅层上并在沟槽内沉积掺杂的硅酸盐层，然后各向同性地蚀刻掉，直到其仅部分地填充沟槽。衬底被氧化成驱动掺杂剂从沟槽内的掺杂的玻璃质层进入周围的衬底。植入离子以形成规划的源/漏区。掺杂剂从第二多晶硅层向外扩散以形成计划的埋入接触结，其中围绕沟槽的掺杂剂在源极/漏极区域和相邻的掩埋接触结点之间提供导电沟道。

26. 发明授权

US09087278B2 Fingerprint identification data card and electronic device 有权
标题翻译：指纹识别数据卡和电子设备
公开(公告)号：US09087278B2
公开(公告)日：2015-07-21
申请号：US13410090
申请日：2012-03-01
申请人： Bin Zhang , Guangsheng Liu , Yang Pan , Jie Li
发明人： Bin Zhang , Guangsheng Liu , Yang Pan , Jie Li
IPC分类号： G06K9/00 , G06K19/07 , G06K19/077
CPC分类号： G06K19/07 , G06K19/0718 , G06K19/07732
摘要： A fingerprint identification data card and an electronic device are provided. The data card includes a case, a circuit board located in the case, an interface, and a fingerprint identifier. The case has a hole, the interface passes through the hole and the interface is connected with the circuit board, and the fingerprint identifier is disposed in the case and is connected with a processor on the circuit board in the case. It can be seen that, before using the data card, a user is required to input a fingerprint through the fingerprint identifier, and the user can use the data card only after passing authentication.
摘要翻译：提供指纹识别数据卡和电子设备。数据卡包括壳体，位于壳体中的电路板，接口和指纹识别器。外壳有孔，接口通过孔，接口与电路板连接，指纹识别器设置在外壳中，与电路板上的处理器连接。可以看出，在使用数据卡之前，需要用户通过指纹识别符输入指纹，用户只能在通过认证后才能使用数据卡。

27. 发明授权

US08996651B2 System and method for delivering media assets in a cloud environment 有权
标题翻译：在云环境中传送媒体资产的系统和方法
公开(公告)号：US08996651B2
公开(公告)日：2015-03-31
申请号：US13295043
申请日：2011-11-12
申请人： Yang Pan
发明人： Yang Pan
IPC分类号： G06F15/16 , H04N21/214 , H04N21/258 , H04N21/2747 , H04N21/414 , H04N21/475 , H04N21/478 , H04N21/482 , H04N21/84
CPC分类号： H04N21/214 , H04N21/25875 , H04N21/2747 , H04N21/41407 , H04N21/4753 , H04N21/47805 , H04N21/482 , H04N21/84
摘要： A media delivery system comprises a handheld computing and communication device, a media delivery unit and a user specific media library in a cloud. A data file including metadata of the media assets in the media library is stored in the handheld device. The handheld device and the media delivery unit are connected through a wireless communication link. A user of the handheld device is identified. A user selected media asset may be delivered by the media delivery unit by receiving the media asset through the cloud.
摘要翻译：媒体传送系统包括手持式计算和通信设备，媒体传送单元和云中的用户特定媒体库。包括媒体库中的媒体资产的元数据的数据文件被存储在手持设备中。手持设备和媒体传送单元通过无线通信链路连接。识别手持设备的用户。用户选择的媒体资产可以由媒体传送单元通过通过云接收媒体资产来传送。

28. 发明申请

US20150082347A1 Delivering Video Program by Digital Television System and Mobile Communication Device 审中-公开
标题翻译：通过数字电视系统和移动通信设备实现视频节目
公开(公告)号：US20150082347A1
公开(公告)日：2015-03-19
申请号：US14032185
申请日：2013-09-19
申请人： Yang Pan
发明人： Yang Pan
IPC分类号： H04N21/41 , H04N21/433 , H04N21/81 , H04N21/482
CPC分类号： H04N21/4126 , H04N21/4122 , H04N21/41407 , H04N21/4307 , H04N21/4332 , H04N21/4333 , H04N21/482 , H04N21/812 , H04N21/8455
摘要： A video program broadcasted by a digital television system includes a plurality frames delivered in a sequential manner. One of the frames representing a starting point of an unfinished program can be transmitted to a mobile communication device. An icon representing the frame is created by the mobile device. The icon maybe placed in a folder for photographs. In one embodiment, the unfinished video program is restarted in the mobile device after a user selects the icon. In another embodiment, the unfinished video program is restated in the television system.
摘要翻译：由数字电视系统广播的视频节目包括以顺序方式传送的多个帧。表示未完成节目的起点的帧中的一个可以被发送到移动通信装置。表示帧的图标由移动设备创建。该图标可能放置在照片的文件夹中。在一个实施例中，在用户选择图标之后，在移动设备中重新启动未完成的视频节目。在另一个实施例中，未完成的视频节目在电视系统中被重述。

29. 发明申请

US20150073904A1 Graphical User Interface for a Search Engine Including User Selectable Advertisement Categories 审中-公开
标题翻译：包含用户可选广告类别的搜索引擎的图形用户界面
公开(公告)号：US20150073904A1
公开(公告)日：2015-03-12
申请号：US14019538
申请日：2013-09-06
申请人： Yang Pan
发明人： Yang Pan
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0256
摘要： A graphical user interface of a personal computing device includes a search box and a search button. An advertising selection menu including a plurality of user selectable advertising categories is displayed after a user actuates the search button while the search box is blanket. A content provider receives the user's selection of the advertising categories. Targeted advertisements are rendered to the user by the content provider when contents based upon a subsequent search query are delivered to the user through the personal device.
摘要翻译：个人计算设备的图形用户界面包括搜索框和搜索按钮。包括多个用户可选择的广告类别的广告选择菜单在用户在搜索框是毯子时致动搜索按钮之后被显示。内容提供者接收用户对广告类别的选择。当基于随后的搜索查询的内容通过个人设备传递给用户时，内容提供商将目标广告呈现给用户。

30. 发明授权

US08887213B2 Handheld media and communication device with a detachable projector for sharing media assets in a group 有权
标题翻译：手持式媒体和通信设备，具有可拆卸投影机，用于共享媒体资产
公开(公告)号：US08887213B2
公开(公告)日：2014-11-11
申请号：US13292089
申请日：2011-11-09
申请人： Yang Pan
发明人： Yang Pan
IPC分类号： H04N21/40 , G06F3/14 , G06F3/147 , H04N9/31 , H04H20/61 , H04L29/08
CPC分类号： G06F3/1454 , G06F3/147 , G09G2370/16 , H04H20/61 , H04L29/08729 , H04L67/12 , H04N9/3141 , H04N9/3173
摘要： A wireless network for delivering a media asset includes a plurality of media and communication devices. The media asset further includes a video file and an audio file. One of the devices is a controlling device. The video file is delivered by a projector unit and the audio file is delivered by the devices. The projector unit receives the video file from the controlling device when the unit and the device are connected. The controlling device can remotely control operations of the projector unit.
摘要翻译：用于传送媒体资产的无线网络包括多个媒体和通信设备。媒体资产还包括视频文件和音频文件。其中一个设备是控制设备。视频文件由投影机单元传送，音频文件由设备传送。连接本机和设备时，投影机单元从控制设备接收视频文件。控制装置可以远程控制投影机单元的操作。

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