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21. 发明授权

US06764958B1 Method of depositing dielectric films 失效
标题翻译：沉积介质膜的方法
公开(公告)号：US06764958B1
公开(公告)日：2004-07-20
申请号：US09627667
申请日：2000-07-28
申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
发明人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/325 , H01L21/0332 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/3148 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76826 , H01L21/76829 , Y10S438/931
摘要： A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
摘要翻译：提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

22. 发明授权

US06750141B2 Silicon carbide cap layers for low dielectric constant silicon oxide layers 失效
标题翻译：用于低介电常数氧化硅层的碳化硅盖层
公开(公告)号：US06750141B2
公开(公告)日：2004-06-15
申请号：US10236800
申请日：2002-09-06
申请人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Paul Fisher , Margaret Lynn Gotuaco , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02271 , H01L21/02362 , H01L21/31633 , H01L21/76813 , H01L21/76828 , H01L21/76829
摘要： A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.
摘要翻译：公开了一种形成用于集成电路制造工艺的低介电常数硅酸盐材料的方法。低介电常数硅酸盐材料是通过使包含有机硅烷化合物，氧源和惰性气体的气体混合物反应而形成的。此后，通过使包含硅源和碳源的气体混合物反应，在硅酸盐材料上形成碳化硅盖层。当在随后的退火步骤中硬化时，碳化硅盖层保护下面的有机硅酸盐层不被开裂和剥离。

23. 发明授权

US06632478B2 Process for forming a low dielectric constant carbon-containing film 失效
标题翻译：用于形成低介电常数含碳膜的方法
公开(公告)号：US06632478B2
公开(公告)日：2003-10-14
申请号：US09791989
申请日：2001-02-22
申请人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
发明人： Frederic Gaillard , Li-Qun Xia , Jen Shu , Ellie Yieh , Tian-Hoe Lim
IPC分类号： C23C1640
CPC分类号： B05D1/60 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3146 , H01L21/31633
摘要： An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.
摘要翻译：本发明的一个实施方案提供了形成具有低介电常数和良好间隙填充能力的含碳层的方法。一种方法包括在基底上沉积含碳层并转化含碳层以除去至少一些碳。转化步骤可以包括例如在含有氢气氛的炉子中退火含碳层。含碳层可以是碳掺杂的氧化硅材料，其中转化步骤改变碳掺杂的氧化硅。另外，该方法可以包括对退火层进行氢和/或低氧等离子体处理以进一步从层去除碳。此外，提供了向退火的等离子体处理材料添加覆盖层的步骤。还包括通过上述方法制备的产品，例如包含低k含碳层的产品，其中低k含碳层已被转化以从层中去除一些碳。另外的产物包括进一步进行氢等离子体处理以从层中除去更多的碳的转化含碳层。此外，提供了沉积在转化和氢等离子体处理层上的覆盖层

24. 发明授权

US06599574B1 Method and apparatus for forming a dielectric film using helium as a carrier gas 失效
标题翻译：使用氦气作为载气形成电介质膜的方法和装置
公开(公告)号：US06599574B1
公开(公告)日：2003-07-29
申请号：US08627631
申请日：1996-04-04
申请人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
发明人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
IPC分类号： C23C1600
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/02274 , H01L21/31625 , Y10S438/905 , Y10S438/906
摘要： The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas. A further aspect of the invention includes annealing the dielectric films formed on the substrates at a lower temperature than required by the process using nitrogen as carrier gas.
摘要翻译：本发明涉及电介质层的沉积，更具体地涉及一种用于形成介电层的方法和装置，例如具有改进的膜均匀性，较高沉积速率，优异的间隙填充/回流能力和更平滑的表面形态的硼磷硅酸盐玻璃（BPSG）。该方法形成具有使用氦载气的方法的电介质层，其产生比常规方法和设备基本上更少的下游残留物，从而减少对室清洁的需要并增加处理的晶片的生产量。本发明在形成诸如BPSG的介电层的工艺中使用氦代替氮作为载气，以提供各种意想不到的好处。根据一个方面，本发明在衬底上形成介电膜，并且通过使用产生比使用氮的方法显着更少的下游和上游残留物的氦来延长系统中的室清洁之间的时间。该方法包括将含有硅，氧和第一掺杂剂原子的工艺气体引入室中; 使用氦气作为系统中的载气; 并且在清洗之前处理比使用氮气作为载气的工艺更多的衬底。本发明的另一方面包括在比使用氮作为载气的方法所要求的温度更低的温度下退火形成在基板上的电介质膜。

25. 发明授权

US06593247B1 Method of depositing low k films using an oxidizing plasma 有权
标题翻译：使用氧化等离子体沉积低k膜的方法
公开(公告)号：US06593247B1
公开(公告)日：2003-07-15
申请号：US09553461
申请日：2000-04-19
申请人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
发明人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
IPC分类号： H01L2131
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
摘要翻译：氧化硅层通过有机硅化合物的等离子体增强氧化制备，以沉积碳原子量至少为1％的膜。通过以小于或等于有机硅化合物的流速的流量将氧引入处理室，并且以0.9W / cm 2的功率密度产生等离子体来沉积具有低水分含量和耐开裂性的膜和约3.2W / cm 2。可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。有机硅化合物优选与每个硅原子键合2或3个碳原子，例如三甲基硅烷，（CH 3）3 SiH。可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

26. 发明授权

US06583497B2 Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing 失效
标题翻译：表面处理c掺杂的SiO 2膜，以提高O2在灰化期间的稳定性
公开(公告)号：US06583497B2
公开(公告)日：2003-06-24
申请号：US10192274
申请日：2002-07-09
申请人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
发明人： Li-Qun Xia , Tian-Hoe Lim , Frederic Gaillard , Ellie Yieh
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , C23C16/0218 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/3105 , H01L21/31612 , H01L21/31633
摘要： A method for forming an insulation layer over a substrate. The method forms a carbon-doped silicon oxide layer by thermal chemical vapor deposition using an organosilane. The carbon-doped silicon oxide layer is subsequently cured and densified. In one embodiment, the cured film is densified in a nitrogen-containing plasma. The method is particularly suitable for deposition of low dielectric constant films, i.e., where k is less than or equal to 3.0. Low-k, carbon-doped silicon oxide methylsilane or di-, tri-, tetra-, or phenylmethylsilane. and ozone. The above method can be carried out in a substrate processing system having a process chamber; a substrate holder, a heater, a gas delivery system, and a power supply, all of which are coupled to a controller. The controller contains a memory having a computer-readable medium with a program embodied for directing operation of the system in accordance with above method.
摘要翻译：一种在衬底上形成绝缘层的方法。该方法通过使用有机硅烷的热化学气相沉积形成碳掺杂氧化硅层。碳掺杂氧化硅层随后被固化和致密化。在一个实施方案中，固化膜在含氮等离子体中致密化。该方法特别适用于沉积低介电常数膜，即其中k小于或等于3.0。低k，碳掺杂的氧化硅甲基硅烷或二，三，四或苯基甲基硅烷。和臭氧。上述方法可以在具有处理室的基板处理系统中进行; 衬底保持器，加热器，气体输送系统和电源，所有这些都耦合到控制器。控制器包含具有计算机可读介质的存储器，该计算机可读介质具有根据上述方法指导系统操作的程序。

27. 发明授权

US06465366B1 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers 失效
标题翻译：双频等离子体增强化学气相沉积碳化硅层
公开(公告)号：US06465366B1
公开(公告)日：2002-10-15
申请号：US09660268
申请日：2000-09-12
申请人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
发明人： Srinivas Nemani , Li-Qun Xia , Ellie Yieh
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , C23C16/325 , C23C16/505 , H01L21/0276 , H01L21/3081 , H01L21/31144 , H01L21/314 , H01L21/7681
摘要： A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RF) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
摘要翻译：公开了一种用于形成用于集成电路制造的碳化硅层的方法。通过在电场的存在下使包含硅源，碳源和惰性气体的气体混合物反应来形成碳化硅层。使用混频射频（RF）功率产生电场。碳化硅层与集成电路制造工艺兼容。在一个集成电路制造工艺中，碳化硅层用作用于制造集成电路结构的硬掩模，例如镶嵌结构。在另一个集成电路制造工艺中，碳化硅层用作用于DUV光刻的抗反射涂层（ARC）。

28. 发明授权

US06426015B1 Method of reducing undesired etching of insulation due to elevated boron concentrations 有权
标题翻译：由于硼浓度升高而减少不必要的绝缘蚀刻的方法
公开(公告)号：US06426015B1
公开(公告)日：2002-07-30
申请号：US09461504
申请日：1999-12-14
申请人： Li-Qun Xia , Francimar Campana , Ellie Yieh
发明人： Li-Qun Xia , Francimar Campana , Ellie Yieh
IPC分类号： B44C122
CPC分类号： H01L21/02129 , H01L21/02271 , H01L21/31051 , H01L21/31116 , H01L21/31625
摘要： A method is provided for reducing elevated boron concentrations (denoted as “boron spikes”) in an insulating layer containing silicon, boron and other elements where the layer interfaces with surfaces of a semiconductor device. The method includes the steps of: seasoning a reaction chamber by flowing into it a mixture of gasses containing silicon, boron, ozone and other elements in predetermined proportions under set conditions of time, pressure, temperature and flow rates to deposit on inner walls and surfaces of the chamber a thin seasoning coating, and placing a semiconductor device in the chamber and covering it with an insulating layer having a composition similar to the seasoning coating. Subsequent etching of selected portions of the insulating layer has been found not to expose conductive surfaces of the device.
摘要翻译：提供了一种用于降低含有硅，硼和其它元素的绝缘层中升高的硼浓度（表示为“硼尖峰”）的方法，其中层与半导体器件的表面接合。该方法包括以下步骤：在时间，压力，温度和流速的设定条件下，以预定比例将含有硅，硼，臭氧和其它元素的气体混合物流入反应室中以沉积在内壁和表面上的腔室是薄的调味涂层，并且将半导体器件放置在腔室中并用具有类似于调味涂层的组成的绝缘层覆盖。发现绝缘层的选定部分的后续蚀刻不暴露器件的导电表面。

29. 发明授权

US06218268B1 Two-step borophosphosilicate glass deposition process and related devices and apparatus 失效
标题翻译：两步硼磷硅玻璃沉积工艺及相关设备及装置
公开(公告)号：US06218268B1
公开(公告)日：2001-04-17
申请号：US09076170
申请日：1998-05-05
申请人： Li-Qun Xia , Ellie Yieh , Maria Galiano , Francimar Campana , Shankar Chandran
发明人： Li-Qun Xia , Ellie Yieh , Maria Galiano , Francimar Campana , Shankar Chandran
IPC分类号： H01L2176
CPC分类号： H01L21/02129 , C23C16/045 , C23C16/401 , C23C16/56 , H01L21/022 , H01L21/02271 , H01L21/31625
摘要： A method for forming a BPSG film from a two-step deposition process and related apparatus and devices. A conformal layer of BPSG is deposited on a substrate. A more stable layer of BPSG is deposited at a higher deposition rate over the conformal layer. The method is suitable for filling trenches at least as narrow as 0.06 microns with aspect ratios of at least 5.5:1.
摘要翻译：一种从两步沉积工艺形成BPSG膜的方法及相关设备和装置。 BPSG的保形层沉积在基底上。在保形层上以更高的沉积速率沉积更稳定的BPSG层。该方法适用于填充至少为0.06微米至少为5.5：1的纵横比的沟槽。

30. 发明授权

US6114216A Methods for shallow trench isolation 失效
标题翻译：浅沟槽隔离方法
公开(公告)号：US6114216A
公开(公告)日：2000-09-05
申请号：US746631
申请日：1996-11-13
申请人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
发明人： Ellie Yieh , Li-Qun Xia , Srinivas Nemani
IPC分类号： H01L21/76 , C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/762
CPC分类号： C23C16/45565 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/4411 , C23C16/4412 , C23C16/45561 , C23C16/4586 , C23C16/46 , C23C16/52 , C23C16/54 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02362 , H01L21/2255 , H01L21/31612 , H01L21/31625
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

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