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21. 发明授权

US06426536B1 Double layer perovskite oxide electrodes 失效
标题翻译：双层钙钛矿氧化物电极
公开(公告)号：US06426536B1
公开(公告)日：2002-07-30
申请号：US09835509
申请日：2001-04-16
申请人： James A. Misewich , Ramamoorthy Ramesh , Alejandro G. Schrott
发明人： James A. Misewich , Ramamoorthy Ramesh , Alejandro G. Schrott
IPC分类号： H01L2976
CPC分类号： H01L49/003
摘要： A method for constructing oxide electrodes for use in an OxFET device is disclosed. The electrodes are formed by first depositing a double layer of conducting perovskite oxides onto an insulating oxide substrate. A resist pattern with the electrode configuration is then defined over the double layer by means of conventional lithography. The top oxide layer is ion milled to a depth preferably beyond the conducting oxide interface, but without reaching the substrate. Chemical etching or RIE is used to remove the part of the lower conductive oxide layer exposed by ion milling without damaging the substrate. Source and drain electrodes are thereby defined, which can be then be used as buried contacts for other perovskites that tend to react with metals. Also disclosed is a field effect transistor structure which includes these source and drain electrodes in a buried channel configuration.
摘要翻译：公开了一种用于构造用于OxFET器件的氧化物电极的方法。电极通过首先将双层导电钙钛矿氧化物沉积到绝缘氧化物基底上而形成。然后通过常规光刻在双层上限定具有电极构型的抗蚀剂图案。将顶部氧化物层离子研磨至优选超过导电氧化物界面的深度，但不到达衬底。使用化学蚀刻或RIE来去除通过离子研磨暴露的下部导电氧化物层的一部分而不损坏衬底。源电极和漏极电极由此被定义，然后可以将其用作倾向于与金属反应的其他钙钛矿的掩埋触点。还公开了一种场效应晶体管结构，其包括处于掩埋沟道构型的这些源极和漏极。

22. 发明授权

US06274388B1 Annealing of a crystalline perovskite ferroelectric cell 失效
标题翻译：结晶钙钛矿铁电体的退火
公开(公告)号：US06274388B1
公开(公告)日：2001-08-14
申请号：US09197157
申请日：1998-11-20
申请人： Sanjeev Aggarwal , Anil M. Dhote , Ramamoorthy Ramesh
发明人： Sanjeev Aggarwal , Anil M. Dhote , Ramamoorthy Ramesh
IPC分类号： H01L2100
CPC分类号： H01L27/1085 , H01L21/02197 , H01L21/02266 , H01L21/02304 , H01L21/02362 , H01L28/56 , H01L28/60
摘要： A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate, preferably including an intermetallic barrier layer. The memory cell consists of a ferroelectric layer, for example of lead niobium zirconium titanate (PNZT) sandwiched between metal oxide electrodes, for example of lanthanum strontium cobaltite (LSCO), which forms with a crystalline orientation and provides a growth template for the crystalline formation of the ferroelectric. The intermetallic layer prevents diffusion of oxygen from the bottom LSCO electrode down to the underlying silicon. At least the bottom electrode is subjected to a rapid thernal anneal at an annealing temperature above its growth temperature. Thereby, the polarization and fatigue characteristics of the ferroelectric cell are improved. Also, a similar intermetallic layer may be placed above the ferroelectric cell. A preferred composition of the intermetallic layer is a refractory silicide, especially a refractory disilicide.
摘要翻译：一种在集成在硅衬底上的非易失性集成电路存储器中用作存储单元的铁电电容器的制造方法，优选地包括金属间阻挡层。记忆单元由铁电层，例如夹在金属氧化物电极之间的铅铌钛酸锆（PNZT），例如锶锶钴酸盐（LSCO），其形成具有结晶取向并提供晶体生长的生长模板的铁电。金属间层防止氧从底部LSCO电极扩散到下面的硅。至少底部电极在高于其生长温度的退火温度下进行快速热退火。由此，提高了铁电体的极化和疲劳特性。而且，类似的金属间化合物层可以放在铁电体上方。金属间化合物层的优选组成是耐火硅化物，特别是难熔二硅化物。

23. 发明授权

US06265230B1 Methods to cure the effects of hydrogen annealing on ferroelectric capacitors 失效
标题翻译：固化氢退火对铁电电容器的影响的方法
公开(公告)号：US06265230B1
公开(公告)日：2001-07-24
申请号：US09488023
申请日：2000-01-20
申请人： Sanjeev Aggarwal , Scott Robert Perusse , Ramamoorthy Ramesh
发明人： Sanjeev Aggarwal , Scott Robert Perusse , Ramamoorthy Ramesh
IPC分类号： H01L2100
CPC分类号： H04Q11/0478 , H01L28/55 , H01L28/75 , H04L49/3081 , H04L2012/5636
摘要： A ferroelectric memory cell integrated with silicon circuitry which require a forming-gas anneal of the silicon circuitry after the ferroelectric stack has been formed. The ferroelectric layer may have a composition such that there is no space in the lattice of the ferroelectric phase to accommodate atomic hydrogen or have a composition with a Curie temperature below the temperature of the forming-gas anneal. Preferably, there is no upper platinum electrode, or it is deposited after the forming-gas anneal. A metal-oxide upper electrode serves as barrier to the forming-gas anneal, and an intermetallic layer positioned above the ferroelectric stack serves as an even better barrier. Forming-gas damage to the ferroelectric stack can be removed by a recovery anneal in a hydrogen-free environment, preferably performed at a temperature above the Curie temperature.
摘要翻译：与硅电路集成的铁电存储单元，其在形成铁电叠层之后需要硅电路的成形气体退火。铁电层可以具有使铁电相的晶格中没有空间以适应原子氢或具有低于成形气体退火温度的居里温度的组成的组成。优选地，不存在上铂电极，或者在成形气体退火之后沉积。金属氧化物上电极用作形成气体退火的阻挡层，并且位于铁电堆叠上方的金属间层用作更好的屏障。铁电堆的形成气体损伤可以通过在无氢环境中的回收退火来去除，优选在高于居里温度的温度下进行。

24. 发明授权

US5838035A Barrier layer for ferroelectric capacitor integrated on silicon 失效
标题翻译：集成在硅上的铁电电容器的阻挡层
公开(公告)号：US5838035A
公开(公告)日：1998-11-17
申请号：US896508
申请日：1997-06-10
申请人： Ramamoorthy Ramesh
发明人： Ramamoorthy Ramesh
IPC分类号： H01L21/8247 , H01B12/00 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/06 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01G4/06
CPC分类号： H01L28/75 , H01L27/0629 , H01L28/55
摘要： A ferroelectric cell in which a ferroelectric stack of a perovskite ferroelectric sandwiched by cubic perovskite metal-oxide conductive electrodes are formed over a silicon body, such as a polysilicon plug penetrating a field oxide over a silicon transistor. According to the invention, an oxidation barrier is placed between the lower metal-oxide electrode and the polysilicon. The oxidation barrier may be: (1) a refractory metal sandwiched between two platinum layer which forms a refractory oxide in a platinum matrix; (2) an intermetallic barrier beneath a platinum electrode, e.g., of NiAl; or (3) a combination of Ru and SrRuO.sub.3 or similar materials. Thereby, the polysilicon plug is protected from oxidation.
摘要翻译：在硅体上形成由立方体钙钛矿金属氧化物导电电极夹持的钙钛矿型铁电体的铁电体叠层，例如贯穿硅晶体管的场氧化物的多晶硅插塞。根据本发明，在下金属氧化物电极和多晶硅之间放置氧化屏障。氧化屏障可以是：（1）夹在铂基质中形成难熔氧化物的两个铂层之间的难熔金属; （2）铂电极下方的金属间屏障，例如NiAl; 或（3）Ru和SrRuO3或类似材料的组合。从而保护多晶硅塞不被氧化。

25. 发明授权

US5248564A C-axis perovskite thin films grown on silicon dioxide 失效
标题翻译：在二氧化硅上生长的C轴钙钛矿薄膜
公开(公告)号：US5248564A
公开(公告)日：1993-09-28
申请号：US988073
申请日：1992-12-09
申请人： Ramamoorthy Ramesh
发明人： Ramamoorthy Ramesh
IPC分类号： B32B9/00 , B32B17/06 , C23C14/08 , C30B29/32 , H01F10/28 , H01G4/33 , H01G7/06 , H01L21/02 , H01L21/314 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L39/02 , H01L41/22
CPC分类号： H01L27/11502 , C23C14/08 , H01L28/55 , H01L41/316 , H01L41/319 , Y10T428/24926
摘要： A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric.
摘要翻译：一种用于通过c轴取向的层状钙钛矿（例如钛酸铋）的中间模板层（14）在二氧化硅层（12）上生长结晶钙钛矿膜（16）的方法和结果。钙钛矿膜可以是用于铁电体的铁电铅 - 镧锆钛酸盐或用作电极的导电立方金属氧化物。

26. 发明授权

US5169485A Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element 失效
标题翻译：外延铁磁锰铝磁记忆元件的制备方法
公开(公告)号：US5169485A
公开(公告)日：1992-12-08
申请号：US665665
申请日：1991-03-07
申请人： Silas J. Allen, Jr. , James P. Harbison , Mark L. Leadbeater , Ramamoorthy Ramesh , Timothy D. Sands
发明人： Silas J. Allen, Jr. , James P. Harbison , Mark L. Leadbeater , Ramamoorthy Ramesh , Timothy D. Sands
IPC分类号： C30B1/02 , G11C11/14 , G11C11/18 , H01F10/26 , H01F10/32 , H01F41/32
CPC分类号： B82Y25/00 , C30B1/023 , C30B29/52 , G11C11/14 , G11C11/18 , H01F10/26 , H01F10/32 , H01F41/32
摘要： A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.
摘要翻译：描述了基于III-V半导体上的锰铝的薄外延膜的非易失性存储元件。该膜在III-V半导体器件处理所需的高温下是稳定的，因此允许非易失性存储元件与III-V半导体电子和光子器件的单片集成。

27. 发明授权

US5168420A Ferroelectrics epitaxially grown on superconducting substrates 失效
标题翻译：在超导衬底上外延生长的铁电体
公开(公告)号：US5168420A
公开(公告)日：1992-12-01
申请号：US616166
申请日：1990-11-20
申请人： Ramamoorthy Ramesh , Jean-Marie Tarascon
发明人： Ramamoorthy Ramesh , Jean-Marie Tarascon
IPC分类号： G11C11/22 , H01G7/06 , H01L21/02
CPC分类号： H01L28/55 , G11C11/22 , H01G7/06 , Y10T29/435
摘要： A ferroelectric storage element and its method of growth. A thin ferroelectric film, for example, of bismuth titanate, is epitaxially grown on a perovskite crystalline substrate of thin film that is superconductive at some temperature. For example, the thin film may be YBa.sub.2 Cu.sub.3 O.sub.7-x, Bi.sub.2 Sr.sub.2 CuO.sub.6+x, or Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x.
摘要翻译：铁电存储元件及其生长方法。例如钛酸铋的薄铁酸体膜在一定温度下超导的薄膜的钙钛矿结晶性基板上外延生长。例如，薄膜可以是YBa2Cu3O7-x，Bi2Sr2CuO6 + x或Bi2Sr2CaCu2O8 + x。

28. 发明申请

US20110308580A1 Ferroic materials having domain walls and related devices 审中-公开
标题翻译：具有畴壁和相关装置的铁素体
公开(公告)号：US20110308580A1
公开(公告)日：2011-12-22
申请号：US12930507
申请日：2011-01-07
申请人： Jan Seidel , Ramamoorthy Ramesh , Lane Martin , Seung-Yeul Yang
发明人： Jan Seidel , Ramamoorthy Ramesh , Lane Martin , Seung-Yeul Yang
IPC分类号： H01L31/02 , G11B5/65
CPC分类号： G11B9/02 , B82Y10/00 , B82Y25/00 , C30B23/02 , C30B29/24 , G11C11/14 , G11C11/161 , G11C11/1675 , G11C19/005 , G11C19/0841 , H01F1/10 , H01F1/405 , H01L28/55 , H02S99/00
摘要： Ferroic materials and methods for diverse applications including nanoscale memory, logic and photovoltaic devices are described. In one aspect, ferroic thin films including insulating domains separated by conducting domain walls are provided, with both the insulating domains and conducting domain walls intrinsic to the ferroic thin films. The walls are on the order of about 2 nm wide, providing virtually two dimensional conducting sheets through the insulating material. Also provided are methods of writing, reading, erasing and manipulating conducting domain walls. According to various embodiments, logic and memory devices having conducting domain walls as nanoscale features are provided. In another aspect, ferroic thin films having photovoltaic activity are provided. According to various embodiments, photovoltaic and optoelectronic devices are provided.
摘要翻译：描述了用于多种应用的铁材料和方法，包括纳米级存储器，逻辑和光伏器件。在一个方面，提供了包括通过导电畴壁分离的绝缘域的铁薄膜，其中绝缘畴和铁磁薄膜固有的导电畴壁。这些壁的宽度大约为2nm，通过绝缘材料提供几乎二维的导电片。还提供写入，读取，擦除和操纵导电壁的方法。根据各种实施例，提供了具有作为纳米尺度特征的导电畴壁的逻辑和存储器件。另一方面，提供了具有光伏活性的铁薄膜。根据各种实施例，提供了光电和光电器件。

29. 发明授权

US07696549B2 Bismuth ferrite films and devices grown on silicon 失效
标题翻译：铋铁氧体薄膜和在硅上生长的器件
公开(公告)号：US07696549B2
公开(公告)日：2010-04-13
申请号：US11297015
申请日：2005-12-08
申请人： Ramamoorthy Ramesh
发明人： Ramamoorthy Ramesh
IPC分类号： H01L29/72
CPC分类号： B81B3/0018 , H01L21/02194 , H01L21/02203 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An optional intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other barrier layers of platinum or an intermetallic alloy produce a polycrystalline BFO layer. The cell may be configured as a non-volatile memory cell or a MEMS structure respectively depending upon the ferroelectric and piezoelectric character of BFO. Lanthanum substitution in the BFO increases ferroelectric performance. The films may be grown by MOCVD using a heated vaporizer.
摘要翻译：一种功能性钙钛矿电池，其形成在硅衬底层上，并且包括夹在两个电极层之间的铋铁氧体（BiFeO 3或BFO）的功能层。可选的中间模板层例如钛酸锶允许铋铁氧体层与硅衬底层晶体学对准。铂或金属间化合物的其它阻挡层产生多晶BFO层。可以根据BFO的铁电和压电特性分别将单元配置为非易失性存储单元或MEMS结构。 BFO中的镧取代增加了铁电性能。可以使用加热蒸发器通过MOCVD生长膜。

30. 发明申请

US20100051079A1 Complex Oxides Useful for Thermoelectric Energy Conversion 有权
标题翻译：用于热电能转换的复合氧化物
公开(公告)号：US20100051079A1
公开(公告)日：2010-03-04
申请号：US12539135
申请日：2009-08-11
申请人： Arunava Majumdar , Ramamoorthy Ramesh , Choongho Yu , Matthew L. Scullin , Mark Huijben
发明人： Arunava Majumdar , Ramamoorthy Ramesh , Choongho Yu , Matthew L. Scullin , Mark Huijben
IPC分类号： H01L35/34 , H01L35/14 , H01L35/30 , H01B1/08
CPC分类号： H01L35/22
摘要： The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.
摘要翻译：本发明提供一种包括含有第一复合氧化物的衬底的热电系统，其中衬底任选地嵌入第二复合氧化物。该热电系统可用于热电发电或热电冷却。

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