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21. 发明申请

US20090146165A1 LED Structure 有权
标题翻译： LED结构
公开(公告)号：US20090146165A1
公开(公告)日：2009-06-11
申请号：US11952048
申请日：2007-12-06
申请人： Ghulam Hasnain , Steven D. Lester
发明人： Ghulam Hasnain , Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44
摘要： A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
摘要翻译：公开了一种发光器件，用于制造它的晶片及其制造方法。器件和晶片包括第一导电类型的第一层，有源层和第二导电类型的层。有源层覆盖第一层，有源层产生光。第二层覆盖有源层，第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。透明导电材料层与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。反射率大于90％的镜面层沉积在第一层电介质材料上。

22. 发明授权

US07495314B2 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US07495314B2
公开(公告)日：2009-02-24
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

23. 发明申请

US20080303053A1 GaN Based LED Having Reduced Thickness and Method for Making the Same 有权
标题翻译：具有降低厚度的GaN基LED及其制造方法
公开(公告)号：US20080303053A1
公开(公告)日：2008-12-11
申请号：US11761223
申请日：2007-06-11
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

24. 发明授权

US07095052B2 Method and structure for improved LED light output 有权
公开(公告)号：US07095052B2
公开(公告)日：2006-08-22
申请号：US10971380
申请日：2004-10-22
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L27/15
CPC分类号： H01L33/08
摘要： The efficiency of LEDs is increased by incorporating multiple active in series separated by tunnel junction diodes. This also allows the LEDs to operate at longer wavelengths.

25. 发明授权

US5376229A Method of fabrication of adjacent coplanar semiconductor devices 失效
标题翻译：相邻共面半导体器件的制造方法
公开(公告)号：US5376229A
公开(公告)日：1994-12-27
申请号：US131835
申请日：1993-10-05
申请人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
发明人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
IPC分类号： H01L21/033 , H01L21/20 , H01L21/306 , B44C1/22
CPC分类号： H01L21/0331 , H01L21/02395 , H01L21/02546
摘要： A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要翻译：一种用于处理提供的不同类型的共面半导体器件的方法。该方法包括以下步骤：形成用于在衬底上形成第一器件区域的第一层，在第一器件区域上形成外延半导体剥离层，去除第一器件区域的一部分以打开形成区域的第二器件区域，外延地沉积第二器件区域，以及去除剥离层以使剩余在衬底上的第一和第二器件区域。

26. 发明申请

US20140124806A1 Light Emitter with Coating Layers 审中-公开
标题翻译：带涂层的发光体
公开(公告)号：US20140124806A1
公开(公告)日：2014-05-08
申请号：US12607053
申请日：2009-10-27
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/32 , H01L33/44
摘要： An AlInGaN light emitting device having a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2, preferably having an index of refraction close to or greater than the index of refraction of GaN. The coating can be made from Ta2O5, Nb2O5, TiO2, or SiC and has can have a thickness between 0.01 and 10 microns. A surface of the coating material may be textured or shaped to increase its surface area and improve light extraction. A coating can be applied directly to one or multiple surfaces of the light emitting device or can be applied onto a contact material and can serve as a passivation or as a protection layer for a device.
摘要翻译：具有涂层的AlInGaN发光器件用于改进从器件提取光。涂层具有非常低的光学损耗和大于2的折射率，优选具有接近或大于GaN的折射率的折射率。涂层可以由Ta2O5，Nb2O5，TiO2或SiC制成，并且可以具有0.01至10微米的厚度。涂层材料的表面可以被纹理化或成形以增加其表面积并改善光提取。涂层可以直接施加到发光器件的一个或多个表面上，或者可以施加到接触材料上，并且可以用作器件的钝化或保护层。

27. 发明申请

US20130228808A1 Light emitter with metal-oxide coating 有权
标题翻译：具有金属氧化物涂层的发光体
公开(公告)号：US20130228808A1
公开(公告)日：2013-09-05
申请号：US11296006
申请日：2005-12-06
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/44
CPC分类号： H01L33/46 , H01L33/32 , H01L33/44
摘要： A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.
摘要翻译：一种基于AlInGaN材料系统的发光器件，其中使用涂层来改善从器件提取光。涂层具有非常低的光学损耗和大于2的折射率。在优选实施例中，涂层由Ta 2 O 5，Nb 2 O 5，TiO 2或SiC制成，并且具有约0.01至10微米的厚度。涂层材料的表面可以被纹理化或成形以增加其表面积并改善光提取。涂层材料的表面也可以被成形为设计逃逸层的光的方向性。涂层可以直接施加到发光器件的表面或多个表面，或者可以施加到接触材料上。涂层还可以用作器件的钝化或保护层。

28. 发明授权

US08384099B2 GaN based LED having reduced thickness and method for making the same 失效
标题翻译：具有减小厚度的GaN基LED及其制造方法
公开(公告)号：US08384099B2
公开(公告)日：2013-02-26
申请号：US12860162
申请日：2010-08-20
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L29/206
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

29. 发明申请

US20100141175A1 Light Sources Utilizing Segmented LEDs to Compensate for Manufacturing Variations in the Light Output of Individual Segmented LEDs 有权
标题翻译：光源利用分段LED来补偿单个分段LED的光输出中的制造变化
公开(公告)号：US20100141175A1
公开(公告)日：2010-06-10
申请号：US12393910
申请日：2009-02-26
申请人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
发明人： Ghulam Hasnain , Syn-Yem Hu , Steven D. Lester
IPC分类号： H05B37/02 , F23Q23/08 , H01L33/00
CPC分类号： H05B33/0827 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H05B33/083 , H05B33/0845 , H05B33/089 , H05B33/10 , H05B37/0263 , H01L2924/00
摘要： A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a controller. The power bus accepts a variable number of Segmented LEDs. The controller receives AC power and provides a power signal on the power bus. Each Segmented LED is characterized by a driving voltage that is greater than 3 times the driving voltage of a conventional LED fabricated in the same material system as the Segmented LED. The number of Segmented LEDs in the light source is chosen to compensate for variations in the light output of individual Segmented LEDs introduced by the manufacturing process. In another aspect of the invention, the number of Segmented LEDs connected to the power bus can be altered after the light source is assembled.
摘要翻译：公开了一种光源及其制造方法。光源包括并联连接到电源总线和控制器的多个分段LED。电源总线接受可变数量的分段LED。控制器接收交流电源，并在电源总线上提供电源信号。每个分段LED的特征在于驱动电压大于在与分段LED相同的材料系统中制造的常规LED的驱动电压的3倍。选择光源中的分段LED的数量来补偿由制造过程引入的各个分段LED的光输出的变化。在本发明的另一方面，在组装光源之后，可以改变连接到电力总线的分段LED的数量。

30. 发明申请

US20100127276A1 GaN Based LED with Improved Light Extraction Efficiency and Method for Making the Same 有权
标题翻译：基于GaN的LED具有改进的光提取效率及其制作方法
公开(公告)号：US20100127276A1
公开(公告)日：2010-05-27
申请号：US12688918
申请日：2010-01-18
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/42
摘要： A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括基板，发光结构和光散射层。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当从n型GaN层和p型GaN层的电子和空穴发射预定波长的光时，有源层 GaN层分别结合在一起。光散射层包括以N面表面为特征的GaN结晶层。 N面表面包括散射预定波长的光的特征。发光结构在N面和衬底之间。

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