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21. 发明授权

US06967344B2 Multi-terminal chalcogenide switching devices 有权
标题翻译：多端硫属化物开关器件
公开(公告)号：US06967344B2
公开(公告)日：2005-11-22
申请号：US10384994
申请日：2003-03-10
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C2213/51 , H01L45/04 , H01L45/1206 , H01L45/1213 , H01L45/1233 , H01L45/144
摘要： Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and/or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
摘要翻译：包括可在电阻状态和导电状态之间切换的硫族化物材料的多端子电子开关器件。这些设备包括第一终端，第二终端和控制终端。将控制信号施加到控制端子，调制第一和第二端子之间的硫族化物材料的导电性和/或将第一和第二端子之间的硫族化物材料从电阻状态切换到导通状态所需的阈值电压。这些设备可以用作电路和网络中的互连设备或信号提供设备。

22. 发明授权

US6087674A Memory element with memory material comprising phase-change material and dielectric material 失效
标题翻译：具有记忆材料的存储元件包括相变材料和电介质材料
公开(公告)号：US6087674A
公开(公告)日：2000-07-11
申请号：US63174
申请日：1998-04-20
申请人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Standford R. Ovshinsky , Wolodymyr Czubatyj , David A. Strand , Patrick J. Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/144 , G11C2213/35 , G11C2213/51 , G11C2213/52 , G11C2213/72
摘要： An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.
摘要翻译：一种电操作的单个单元存储器元件，包括：一定量单个存储单元的存储器材料的体积，所述存储器材料包括相变材料和电介质材料的不均匀混合物; 以及用于将电信号传送到所述存储器材料的体积的至少一部分的装置。一种电操作的单电池存储元件，包括：限定单个单元存储元件的存储器材料的量，所述存储器材料包括相变材料和介电材料，其中所述相变材料具有多个可检测的电阻率值并且可以直接设置为电阻率值之一，而不需要根据材料的电阻率值将电阻值设定为特定的起始或擦除电阻率值; 以及用于将电信号传送到存储材料体积的至少一部分的装置。

23. 发明申请

US20120040493A1 PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES 失效
标题翻译：在微波频率下等离子体沉积非晶半导体
公开(公告)号：US20120040493A1
公开(公告)日：2012-02-16
申请号：US12855645
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

24. 发明申请

US20090057645A1 Memory element with improved contacts 审中-公开
标题翻译：记忆元素改善了接触
公开(公告)号：US20090057645A1
公开(公告)日：2009-03-05
申请号：US12290353
申请日：2008-10-30
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyj , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
摘要翻译：一种相变存储元件，包括相变存储器材料，第一电触头和第二电触头。电触点中的至少一个具有电耦合到存储器材料的侧壁。

25. 发明申请

US20060110846A1 Electrically programmable memory element with improved contacts 审中-公开
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US20060110846A1
公开(公告)日：2006-05-25
申请号：US11287833
申请日：2005-11-28
申请人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
发明人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供导电侧壁间隔物; 以及形成与所述导电侧壁间隔物电连通的相变材料。

26. 发明申请

US20050283515A1 Methods of factoring and modular arithmetic 审中-公开
公开(公告)号：US20050283515A1
公开(公告)日：2005-12-22
申请号：US11213027
申请日：2005-08-26
申请人： Stanford Ovshinsky , Boil Pashmakov
发明人： Stanford Ovshinsky , Boil Pashmakov
IPC分类号： G06F7/49 , G11C11/56 , G11C16/02 , H01L27/105 , H01L29/04 , H01L45/00
CPC分类号： G11C13/0004 , G06F7/49 , G11C11/56 , G11C11/5678 , G11C13/004
摘要： A method of factoring numbers in a non-binary computation scheme and more particularly, a method of factoring numbers utilizing a digital multistate phase change material. The method includes providing energy in an amount characteristic of the number to be factored to a phase change material programmed according to a potential factor of the number. The programming strategy provides for the setting of the phase change material once for each time a multiple of a potential factor is present in the number to be factored. By counting the number of multiples and assessing the state of the phase change material upon execution of the method, a determination of whether a potential factor is indeed a factor may be made. A given volume of phase change material may be reprogrammed for different factors or separate volumes of phase change material may be employed for different factors. Parallel factorization over several potential factors may be achieved by combining separate volumes of phase change material programmed according to different potential factors. Methods of addition and computing congruences in a modular arithmetic system are also included.

27. 发明授权

US06969866B1 Electrically programmable memory element with improved contacts 有权
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US06969866B1
公开(公告)日：2005-11-29
申请号：US09276273
申请日：1999-03-25
申请人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
发明人： Tyler Lowrey , Stanford R. Ovshinsky , Guy C. Wicker , Patrick J. Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey A. Kostylev
IPC分类号： G11C11/56 , H01L27/24 , H01L45/00 , H01L47/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
摘要翻译：一种存储器元件，包括一定量的相变存储器材料; 以及用于向存储器材料提供电信号的第一和第二触点，其中第一触点包括导电侧壁间隔物。或者，第一接触可以包括具有与存储材料相邻的边缘的接触层。

28. 发明授权

US06963893B2 Methods of factoring and modular arithmetic 失效
标题翻译：分解和模数运算方法
公开(公告)号：US06963893B2
公开(公告)日：2005-11-08
申请号：US10726985
申请日：2003-12-03
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G06F7/49 , G11C11/56 , G11C16/02 , H01L27/105 , H01L29/04 , H01L45/00 , G06F7/50
CPC分类号： G11C13/0004 , G06F7/49 , G11C11/56 , G11C11/5678 , G11C13/004
摘要： A method of factoring numbers in a non-binary computation scheme and more particularly, a method of factoring numbers utilizing a digital multistate phase change material. The method includes providing energy in an amount characteristic of the number to be factored to a phase change material programmed according to a potential factor of the number. The programming strategy provides for the setting of the phase change material once for each time a multiple of a potential factor is present in the number to be factored. By counting the number of multiples and assessing the state of the phase change material upon execution of the method, a determination of whether a potential factor is indeed a factor may be made. A given volume of phase change material may be reprogrammed for different factors or separate volumes of phase change material may be employed for different factors. Parallel factorization over several potential factors may be achieved by combining separate volumes of phase change material programmed according to different potential factors. Methods of addition and computing congruences in a modular arithmetic system are also included.
摘要翻译：一种在非二进制计算方案中分解数字的方法，更具体地说，涉及使用数字多态相变材料分解数字的方法。该方法包括将根据该数量的潜在因素编程的相变材料的要素数量特征量的能量提供给该相变材料。编程策略提供了相变材料的设置，每次在要考虑的数量中存在潜在因子的倍数。通过计算倍数并在执行该方法时评估相变材料的状态，可以确定潜在因素是否确实是一个因素。可以对于不同的因素对给定体积的相变材料进行重新编程，或者可以针对不同的因素采用单独体积的相变材料。可以通过组合根据不同潜在因素编程的不同体积的相变材料来实现几个潜在因素的并行分解。还包括在模块化算法系统中添加和计算一致性的方法。

29. 发明授权

US06859390B2 Phase-change memory element and method of storing data therein 有权
标题翻译：相变存储元件及其中存储数据的方法
公开(公告)号：US06859390B2
公开(公告)日：2005-02-22
申请号：US10755169
申请日：2004-01-09
申请人： Boil Pashmakov
发明人： Boil Pashmakov
IPC分类号： G11C11/34 , G11C16/02 , G11C16/10 , G11C11/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0045 , G11C2013/009
摘要： A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.
摘要翻译：一种包括相变材料的相变存储元件。相变存储元件具有多个存储状态，其中每个存储器状态具有对应的阈值电压。阈值电压可以用于确定存储器元件的当前存储器状态。相变材料可以包括硫属元素。

30. 发明授权

US08222125B2 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08222125B2
公开(公告)日：2012-07-17
申请号：US12855637
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/20 , H01L21/205 , C23C16/00 , C23C16/24 , C23C16/50 , C23C16/511
CPC分类号： H01L31/03767 , C23C16/24 , C23C16/452 , H01J37/32211 , H01J37/3244 , H01J37/32477 , H01J37/3277 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/028 , H01L31/065 , H01L31/076 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

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