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    • 21. 发明申请
    • Light Emitting Device and Method of Manufacturing the Same
    • 发光装置及其制造方法
    • US20080251796A1
    • 2008-10-16
    • US11993965
    • 2006-06-22
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • Jong Lam LeeJae Ho LeeYeo Jin YoonEu Jin HwangDae Won Kim
    • H01L33/00
    • H01L27/15H01L27/153H01L27/3281H01L33/08H01L33/20H01L33/24H01L33/28H01L33/32H01L33/385H01L33/44H01L33/62H01L51/5253H01L2224/45144H01L2224/48095H01L2224/48137H01L2933/0066H01L2924/00
    • The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semi-conductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
    • 本发明涉及一种发光器件及其制造方法。 根据本发明,发光器件包括衬底,形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层,其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外,本发明提供了一种发光器件,其包括形成有多个发光单元的衬底,每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层,以及基座衬底翻转 芯片接合到基板上,其中一个发光单元的N型半导体层和另一个相邻发光单元的P型半导体层彼此连接,并且至少包括P- 发光单元的半导体层的类型与水平面的斜率为20〜80°。 此外,本发明提供一种制造发光器件的方法。 因此,具有发光效率,外部量子效率,提取效率等发光装置的特性得到提高,可靠性得到确保,能够发出高发光强度和亮度的光的优点。
    • 27. 发明申请
    • SYSTEM FOR ASSESSING AN ENVIRONMENTAL LOAD OF BUILDING DURING LIFE CYCLE
    • 生命周期环境负荷评估系统
    • US20130090972A1
    • 2013-04-11
    • US13110261
    • 2011-05-18
    • Sung Woo ShinHan Seung LeeSung Ho TaeDae Won KimYoung Jun ParkJung Soo ByunJang Ho AnJoo Ho LeeJun Seo Lee
    • Sung Woo ShinHan Seung LeeSung Ho TaeDae Won KimYoung Jun ParkJung Soo ByunJang Ho AnJoo Ho LeeJun Seo Lee
    • G06Q10/06
    • G06Q10/06313Y02P90/84
    • The present invention relates to an environmental load assessment system, which is capable of efficiently and simply assessing an environmental load of a building in all stages (e.g., a planning stage, a design stage, a construction stage, and a use stage after construction) in doing executing a business by subdividing an assessment process, such as simple assessment in the design stage, detailed assessment in the start stage, and site assessment in the construction stage according to the progress of a construction project. The system of the present invention includes a DB server for storing material information, environmental load information, and itemized material information about a construction work and storing environmental load information about an energy source; a management server for assessing environmental loads based on simple assessment, a detailed assessment, and site assessment according to the progress of a target assessment construction project; and a UI server for providing user terminals with an execution environment so that the management server can be operated.
    • 本发明涉及一种环境负荷评估系统,其能够在各个阶段(例如,规划阶段,设计阶段,施工阶段和施工阶段之后)有效地简单地评估建筑物的环境负荷, 根据建设项目的进展情况,在设计阶段进行简单评估,起步阶段详细评估,施工阶段现场评估等细分分析评估过程。 本发明的系统包括:DB服务器,用于存储材料信息,环境负载信息和关于建筑工作的分项材料信息,并存储关于能源的环境负载信息; 根据目标评估建设项目进展情况,简单评估,详细评估和现场评估,评估环境负荷的管理服务器; 以及用于向用户终端提供执行环境以便管理服务器可以被操作的UI服务器。
    • 28. 发明授权
    • Light emitting diode for AC operation
    • 用于交流操作的发光二极管
    • US08232565B2
    • 2012-07-31
    • US12607644
    • 2009-10-28
    • Chung Hoon LeeDae Won KimDae Sung KalWon Cheol SeoKyung Hee YeYeo Jin Yoon
    • Chung Hoon LeeDae Won KimDae Sung KalWon Cheol SeoKyung Hee YeYeo Jin Yoon
    • H01L33/00
    • H01L27/153H01L33/20H01L33/62H01L2224/48H05B33/0821
    • The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
    • 本发明公开了一种发光二极管(LED),其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元,每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元,每个包括至少一个发光单元,每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子,并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外,第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间,并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。
    • 29. 发明申请
    • SPECTRUM DETECTOR
    • 光谱检测器
    • US20120057156A1
    • 2012-03-08
    • US13321082
    • 2009-08-17
    • Shiro SakaiWon Chul SeoDae Won Kim
    • Shiro SakaiWon Chul SeoDae Won Kim
    • G01J3/18
    • G01J3/0235B82Y20/00G01J3/02G01J3/0205G01J3/0259G01J3/36G01J3/42G01J2003/1213
    • Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.
    • 提供了能够小型化并且不需要复杂的光轴对准的光谱检测器。 本发明的光谱检测器包括:基板; 形成在所述基板上并包括具有多个凸部的半导体的光电探测器; 以及波长检测电路,用于从入射到光电检测器上的光检测透过多个凸部的光的波长。 根据本发明,可以提供一种小型光谱检测器,其可以容易地检测包括在未知波长的光中的峰值波长分布,而不需要使用诸如光栅或棱镜的光学设备,从而不需要 复合光学系统的光轴对准。
    • 30. 发明授权
    • Light emitting diode having extensions of electrodes for current spreading
    • 具有用于电流扩散的电极延伸的发光二极管
    • US08076688B2
    • 2011-12-13
    • US12442267
    • 2006-09-25
    • Dae Won KimYeo Jin Yoon
    • Dae Won KimYeo Jin Yoon
    • H01L33/00
    • H01L33/38H01L33/20
    • Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.
    • 公开了一种具有用于改善电流扩展的电极延伸的发光二极管。 发光二极管包括形成在基板上的下半导体层,上半导体层和有源层。 上半导体层位于下半导体层之上,使得下半导体层的边缘区域被暴露,并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口 以暴露下半导体层。 凹痕的远端彼此间隔开。 同时,在与半导体层的第一角对应的下半导体层的露出区上形成下电极,在半导体层上的透明电极层上形成上电极。 在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。 在透明电极层上形成从上部电极延伸的上延伸部。 下延伸和上延伸改善电流扩散,特别是在具有大面积的发光二极管中。