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21. 发明授权

US07872582B1 RFID tag chips and tags with alternative memory lock bits and methods 有权
标题翻译： RFID标签芯片和标签具有替代的存储器锁定位和方法
公开(公告)号：US07872582B1
公开(公告)日：2011-01-18
申请号：US11872774
申请日：2007-10-16
申请人： Christopher J. Diorio
发明人： Christopher J. Diorio
IPC分类号： G08B13/14 , G08B13/26 , G06F13/00 , G06F13/28 , G11C5/14
CPC分类号： G06K7/0008 , G06K7/10138
摘要： RFID tag circuits, tags, and methods are provided for using alternative memory lock bits. A pointer in tag memory is configured to point to one or the other of the alternative lock bits associated with a section of the memory for performing a function in response to a reader command. Upon receiving the reader command, the tag first checks the pointer and performs the function based on which lock bit(s) is selected.
摘要翻译：提供RFID标签电路，标签和方法用于使用备用存储器锁定位。标签存储器中的指针被配置为指向与存储器的一部分相关联的替代锁定位中的一个或另一个，以响应于读取器命令执行功能。在接收到读取器命令时，标签首先检查指针并基于哪个锁定位被选择来执行该功能。

22. 发明授权

US07696882B1 Reading codes of RFID tags incoming at premises and removing them later as they exit 有权
标题翻译：读取RFID标签的代码，并在出厂时稍后移除
公开(公告)号：US07696882B1
公开(公告)日：2010-04-13
申请号：US12018937
申请日：2008-01-24
申请人： Kambiz Rahimi , Christopher J. Diorio , Ronald A. Oliver , Gregory T. Kavounas
发明人： Kambiz Rahimi , Christopher J. Diorio , Ronald A. Oliver , Gregory T. Kavounas
IPC分类号： G08B13/14
CPC分类号： G08B13/2482 , G06K2017/0045 , G06K2017/0051 , G06Q10/087 , G06Q10/0875 , G08B13/246 , G08B13/2462 , G08B13/2488
摘要： RFID reader systems, components, software and methods are provided for use premises that have RFID-tagged items. When a person comes onto an enclosure of the premises already carrying a personal tag, the incoming code of that personal tag is read. When later the person exits the enclosure, they could be transporting some of the items that have actionable codes. The actionable codes can be read, but the incoming code can be removed from them, before the actionable codes are acted upon, in Point-of-Sale or Electronic Article Surveillance systems.
摘要翻译：提供RFID读取器系统，组件，软件和方法用于具有RFID标签的物品的场所。当一个人进入已经携带个人标签的场所的外壳时，读取该个人标签的传入代码。当后来的人退出外壳时，他们可以运送一些具有可操作代码的物品。可以读取可操作的代码，但是可以在销售点或电子文件监控系统中执行可操作的代码之前，将其中的代码移除。

23. 发明授权

US07667589B2 RFID tag uncoupling one of its antenna ports and methods 有权
标题翻译： RFID标签解耦其天线端口之一和方法
公开(公告)号：US07667589B2
公开(公告)日：2010-02-23
申请号：US10891894
申请日：2004-07-14
申请人： Dimitri C. Desmons , Ronald A. Oliver , Christopher J. Diorio , Todd E. Humes
发明人： Dimitri C. Desmons , Ronald A. Oliver , Christopher J. Diorio , Todd E. Humes
IPC分类号： G08B19/00
CPC分类号： G06K19/07767 , G06K19/07749
摘要： RFID tags have an on-chip antenna and an off-chip antenna. One of the antennas can become uncoupled if the proper signal is received, while the other antenna may still operate. The uncoupled antenna can be the larger one, for example the off-chip antenna. Then the tag can then be read only by the smaller antenna, which effectively reduces the range of the RFID tag, but without disabling it entirely.
摘要翻译： RFID标签具有片上天线和片外天线。如果接收到适当的信号，其中一个天线可能会脱耦，而另一个天线仍然可以工作。非耦合天线可以是较大的天线，例如片外天线。那么标签然后可以被较小的天线读取，这有效地减少了RFID标签的范围，但是没有完全禁用它。

24. 发明申请

US20090237220A1 RFID TAGS WITH POWER RECTIFIERS THAT HAVE BIAS 有权
标题翻译： RFID标签与具有偏置的功率整流器
公开(公告)号：US20090237220A1
公开(公告)日：2009-09-24
申请号：US12475899
申请日：2009-06-01
申请人： Ronald A. Oliver , Christopher J. Diorio
发明人： Ronald A. Oliver , Christopher J. Diorio
IPC分类号： H04B7/00 , H04B1/16
CPC分类号： G06K19/0723 , G06K19/0701
摘要： A system and method for generating a rectified signal in a RFID tag. An alternating signal is received by the RFID tag, and a first phase of the alternating signal is coupled to a gate and to a first non-controlling terminal of a first switching transistor. The non-controlling terminal of the first switching transistor is one of a source and a drain of the first switching transistor. A first bias voltage is applied between the first non-controlling terminal and the gate of the first switching transistor and a rectified voltage is received between the first non-controlling terminal and a second non-controlling terminal of the first switching transistor.
摘要翻译：一种用于在RFID标签中产生整流信号的系统和方法。交替信号由RFID标签接收，交流信号的第一相耦合到第一开关晶体管的栅极和第一非控制端子。第一开关晶体管的非控制端子是第一开关晶体管的源极和漏极之一。在第一非控制端子和第一开关晶体管的栅极之间施加第一偏置电压，并且在第一非控制端子和第一开关晶体管的第二非控制端子之间接收整流电压。

25. 发明授权

US07245213B1 RFID readers and RFID tags exchanging encrypted password 有权
标题翻译： RFID阅读器和RFID标签交换加密密码
公开(公告)号：US07245213B1
公开(公告)日：2007-07-17
申请号：US11033028
申请日：2005-01-10
申请人： Aanand Esterberg , Christopher J. Diorio , Todd E. Humes
发明人： Aanand Esterberg , Christopher J. Diorio , Todd E. Humes
IPC分类号： G08B1/08 , G08B13/14 , H04Q5/22
CPC分类号： H04L63/0428 , H04L63/0492 , H04L63/083
摘要： RFID system components, such as readers and tags, communicate where at least a portion of data or a password is transmitted in encrypted form. The reader transmits a command, along with data or a password encrypted using an encryption kernel. In some instances, the tag itself has sent the kernel.
摘要翻译：诸如读取器和标签的RFID系统组件在以加密形式传送数据或密码的至少一部分的情况下通信。读取器发送命令，以及使用加密内核加密的数据或密码。在某些情况下，标签本身已发送内核。

26. 发明授权

US07061324B2 Use of analog-valued floating-gate transistors for parallel and serial signal processing 有权
公开(公告)号：US07061324B2
公开(公告)日：2006-06-13
申请号：US11055959
申请日：2005-02-10
申请人： Christopher J. Diorio , Todd E. Humes , Ronald A. Oliver , William T. Colleran , Scott A. Cooper
发明人： Christopher J. Diorio , Todd E. Humes , Ronald A. Oliver , William T. Colleran , Scott A. Cooper
IPC分类号： H03F3/16
CPC分类号： H03F3/211 , H01L27/115 , H01L27/11521 , H01L27/11558 , H03F1/30 , H03F1/301 , H03F3/16 , H03F3/45744 , H03F2200/174 , H03F2203/45121 , H03F2203/45341 , H03F2203/45474 , H03F2203/45661 , H03G1/007
摘要： Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.

27. 发明授权

US07038544B2 Use of analog-valued floating-gate transistors for parallel and serial signal processing 有权
标题翻译：使用模拟值浮栅晶体管进行并行和串行信号处理
公开(公告)号：US07038544B2
公开(公告)日：2006-05-02
申请号：US11055948
申请日：2005-02-10
申请人： Christopher J. Diorio , Todd E. Humes , Ronald A. Oliver , William T. Colleran , Scott A. Cooper
发明人： Christopher J. Diorio , Todd E. Humes , Ronald A. Oliver , William T. Colleran , Scott A. Cooper
IPC分类号： H03G3/30
CPC分类号： H03F3/211 , H01L27/115 , H01L27/11521 , H01L27/11558 , H03F1/30 , H03F1/301 , H03F3/16 , H03F3/45744 , H03F2200/174 , H03F2203/45121 , H03F2203/45341 , H03F2203/45474 , H03F2203/45661 , H03G1/007
摘要： Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.
摘要翻译：模拟值浮栅晶体管用作可调节电路组件，用于修改和/或控制无线电中的并行和/或串行处理电路中的信号通路的增益，相位，偏移，频率响应，电流消耗和/或传递函数频率，模拟或混合信号集成电路。

28. 发明授权

US06958646B1 Autozeroing floating-gate amplifier 有权
标题翻译：自动调零浮栅放大器
公开(公告)号：US06958646B1
公开(公告)日：2005-10-25
申请号：US10447684
申请日：2003-05-28
申请人： William T. Colleran , Todd E. Humes , Christopher J. Diorio
发明人： William T. Colleran , Todd E. Humes , Christopher J. Diorio
IPC分类号： H03F1/02 , H03F1/30
CPC分类号： H03F1/30
摘要： An autozeroing floating-gate amplifier (AFGA) is implemented utilizing a programmable gain element, the characteristics of which may be changed by changing the amount of charge stored on a floating gate device.
摘要翻译：利用可编程增益元件实现自动调零浮栅放大器（AFGA），其可以通过改变存储在浮动栅极器件上的电荷量来改变其特性。

29. 发明授权

US5990512A Hole impact ionization mechanism of hot electron injection and four-terminal .rho.FET semiconductor structure for long-term learning 失效
标题翻译：热电子注入和四端rho FET半导体结构的孔冲击电离机理进行长期学习
公开(公告)号：US5990512A
公开(公告)日：1999-11-23
申请号：US845018
申请日：1997-04-22
申请人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
发明人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
IPC分类号： H01L29/76
CPC分类号： H01L29/76
摘要： Hot-electron injection driven by a hole impact ionization mechanism at the channel-drain junction provides a new method of hot electron injection. Using this mechanism, a four-terminal pFET floating-gate silicon MOS transistor for analog learning applications provides nonvolatile memory storage. Electron tunneling permits bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapses can implement a learning function. The synapse learning follows a simple power law. Unlike conventional EEPROMs, the synapses allow simultaneous memory reading and writing. Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel. Synaptic arrays employing these devices enjoy write and erase isolation between array synapses is better than 0.01% because the tunneling and injection processes are exponential in the transistor terminal voltages. The synapses are small, and typically are operated at subthreshold current levels.
摘要翻译：在通道 - 漏极连接处由孔冲击电离机制驱动的热电子注入提供了一种新的热电子注入方法。使用这种机制，用于模拟学习应用的四端子pFET浮栅硅MOS晶体管提供非易失性存储器存储。电子隧道允许双向内存更新。因为这些更新取决于存储的存储器值和晶体管端子电压两者，所以突触可以实现学习功能。突触学习遵循简单的幂律。与常规EEPROM不同，突触允许同时进行存储器读写。因此，Synapse晶体管阵列可以同时计算阵列输出和本地存储器更新。使用这些器件的突触阵列享受阵列突触之间的写入和擦除隔离优于0.01％，因为隧道和注入过程在晶体管端子电压中是指数的。突触很小，通常以亚阈值电流水平操作。

30. 发明授权

US5914894A Method for implementing a learning function 失效
标题翻译：实现学习功能的方法
公开(公告)号：US5914894A
公开(公告)日：1999-06-22
申请号：US88655
申请日：1998-06-01
申请人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
发明人： Christopher J. Diorio , Paul E. Hasler , Bradley A. Minch , Carver A. Mead
IPC分类号： G11C27/00 , H01L29/788 , G11C16/04
CPC分类号： G11C27/005 , H01L29/7885
摘要： A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.
摘要翻译：提供具有时变传递函数的三端硅MOS晶体管，其可以同时作为单晶体管模拟学习装置和单晶体管非易失性模拟存储器工作。通过从N型MOS浮栅晶体管的完全绝缘的浮栅中添加或去除电子来实现时变传递函数。晶体管具有电容耦合到浮动栅极的控制栅极; 从该控制栅极的角度看，晶体管的传递函数被修改。电子通过Fowler-Nordheim隧道从浮动门去除。电子通过热电子注入添加到浮动栅极。

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