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21. 发明申请

US20090272964A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090272964A1
公开(公告)日：2009-11-05
申请号：US12453183
申请日：2009-05-01
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

22. 发明授权

US09196605B2 Light-emitting structure 有权
标题翻译：发光结构
公开(公告)号：US09196605B2
公开(公告)日：2015-11-24
申请号：US13230988
申请日：2011-09-13
申请人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
发明人： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
IPC分类号： H01L33/08 , H01L25/075 , H01L27/15 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.
摘要翻译：本申请的一个实施例公开了一种发光结构，其包括基板，第一单元和在基板上分开形成的第二单元; 形成在所述第一单元和所述第二单元之间的沟槽，并且具有暴露所述基板的底部部分，比所述较不陡峭的侧壁更陡峭的侧壁和更陡峭的侧壁; 以及连接第一单元和第二单元并覆盖第一单元，第二单元和较不陡峭侧壁的电连接; 其中所述侧壁直接连接到所述底部部分，并且所述较陡侧壁没有电连接覆盖物。

23. 外观设计

USD646234S1 Light-emitting diode array 有权
标题翻译：发光二极管阵列
公开(公告)号：USD646234S1
公开(公告)日：2011-10-04
申请号：US29380704
申请日：2010-12-09
申请人： Chiu-Lin Yao , Chia-Liang Hsu , Ching-Bei Lin , Sheng-Fang Hung
设计人： Chiu-Lin Yao , Chia-Liang Hsu , Ching-Bei Lin , Sheng-Fang Hung

24. 发明授权

US07968867B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07968867B2
公开(公告)日：2011-06-28
申请号：US12453183
申请日：2009-05-01
申请人： Chiu-Lin Yao , Ta-Cheng Hsu
发明人： Chiu-Lin Yao , Ta-Cheng Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L2933/0083
摘要： A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
摘要翻译：公开了一种发光器件及其制造方法。发光装置是包括生长衬底，n型半导体层，量子阱有源层和p型半导体层的半导体器件。它结合了全息和量子阱相互扩散（QWI）以形成具有二维周期性变化的介电常数或量子阱活性层中的二维周期性变化的材料组成的光子晶体发光器件。光子晶体发光器件可以提高内部效率和光提取效率。

25. 发明申请

US20110121291A1 LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20110121291A1
公开(公告)日：2011-05-26
申请号：US13022098
申请日：2011-02-07
申请人： Shih-I Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
IPC分类号： H01L33/10
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/38
摘要： A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.
摘要翻译：发光元件包括用于发光的发光叠层和基板结构，包括：第一基板，设置在所述发光堆叠下方，并具有面向所述发光叠层的第一表面; 以及第二基板，其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

26. 发明申请

US20100096657A1 LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE 有权
标题翻译：具有图案表面的发光装置
公开(公告)号：US20100096657A1
公开(公告)日：2010-04-22
申请号：US12646553
申请日：2009-12-23
申请人： Chen OU , Chiu-Lin Yao
发明人： Chen OU , Chiu-Lin Yao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/30 , H01L33/32 , H01L2933/0091
摘要： The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.
摘要翻译：本发明提供一种发光器件，其包括衬底，形成在衬底上的中间层，在中间层上形成的具有第一导电型的第一掺杂半导体层，在第一衬底上形成的具有第二导电类型的第二掺杂半导体层形成在所述第一掺杂半导体层和所述第二掺杂半导体层之间的有源层，以及具有多个有序图案单元的图案化表面; 其中所述图案化表面基本上不平行于所述有源层的表面的相应区域。

27. 发明授权

US09337407B2 Photoelectronic element and the manufacturing method thereof 有权
标题翻译：光电元件及其制造方法
公开(公告)号：US09337407B2
公开(公告)日：2016-05-10
申请号：US12751642
申请日：2010-03-31
申请人： Chiu-Lin Yao
发明人： Chiu-Lin Yao
IPC分类号： H01L33/00 , H01L33/64 , H01L33/14 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/46
CPC分类号： H01L33/641 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A photoelectronic element includes an electrically insulative substrate, an electrically conductive substrate, an intermediate layer and a semiconductor stacked layer. The electrically insulative substrate has a top surface. The electrically conductive substrate has a lower portion, and an upper portion surrounded by the electrically insulative substrate and coplanar with the top surface. The intermediate layer has a first portion formed directly under the electrically insulative substrate and above the electrically conductive substrate, a second portion and a bent portion formed between the first portion and the second portion. The semiconductor stacked layer has an light-emitting active layer with a high band gap, disposed on the electrically insulative substrate and the upper portion.
摘要翻译：光电子元件包括电绝缘基板，导电基板，中间层和半导体堆叠层。电绝缘基板具有顶表面。导电基板具有下部，并且由电绝缘基板包围并与顶表面共面的上部。中间层具有直接形成在电绝缘基板下方的导电基板上方的第一部分和形成在第一部分和第二部分之间的第二部分和弯曲部分。半导体堆叠层具有设置在电绝缘基板和上部上的具有高带隙的发光有源层。

28. 发明授权

US09012948B2 Light-emitting element having a plurality of contact parts 有权
标题翻译：具有多个接触部的发光元件
公开(公告)号：US09012948B2
公开(公告)日：2015-04-21
申请号：US13175698
申请日：2011-07-01
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
IPC分类号： H01L33/46 , H01L33/08 , H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译：发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

29. 外观设计

USD725818S1 Lens for lighting module 有权
标题翻译：镜头用于照明模块
公开(公告)号：USD725818S1
公开(公告)日：2015-03-31
申请号：US29423033
申请日：2012-05-25
申请人： Chiu-Lin Yao , Ming-Chi Hsu , Been-Yu Liaw
设计人： Chiu-Lin Yao , Ming-Chi Hsu , Been-Yu Liaw

30. 发明授权

US08994052B2 High-efficiency light-emitting device and manufacturing method thereof 有权
标题翻译：高效发光元件及其制造方法
公开(公告)号：US08994052B2
公开(公告)日：2015-03-31
申请号：US13161835
申请日：2011-06-16
申请人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
IPC分类号： H01L33/00 , H01L33/58 , H01L33/10 , H01L33/22
CPC分类号： H01L33/10 , H01L33/22
摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
摘要翻译：发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为从与第一半导体层相对的第二半导体层的顶表面提取。

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