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21. 发明申请

US20080019168A1 MEMORY STRUCTURE AND DATA WRITING METHOD THEREOF 审中-公开
标题翻译：存储器结构和数据写入方法
公开(公告)号：US20080019168A1
公开(公告)日：2008-01-24
申请号：US11459594
申请日：2006-07-24
申请人： Cha-Hsin Lin , Ching-Chiun Wang , Lurng-Shehng Lee
发明人： Cha-Hsin Lin , Ching-Chiun Wang , Lurng-Shehng Lee
IPC分类号： G11C11/00 , G11C5/14
CPC分类号： G11C11/15
摘要： A memory structure and data writing method thereof includes a power supply circuit and a bridge circuit. The bridge circuit is driven by the power supply circuit, and operate in a plurality of conduction modes. The memory structure only requires one set of power supply circuit and does not need to know the resistance of the bit line in advance, also the signal error is hardly occurred when the memory structure is switching between positive and negative.
摘要翻译：其存储结构和数据写入方法包括电源电路和桥接电路。桥式电路由电源电路驱动，并以多种导通模式工作。存储器结构仅需要一组电源电路，并且不需要事先知道位线的电阻，当存储器结构正负切换时，几乎不发生信号误差。

22. 发明授权

US08362454B2 Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same 有权
标题翻译：具有氧空位的金属氧化物层的电阻式随机存取存储器及其制造方法
公开(公告)号：US08362454B2
公开(公告)日：2013-01-29
申请号：US12334203
申请日：2008-12-12
申请人： Hengyuan Lee , Pang-Hsu Chen , Tai-Yuan Wu , Ching-Chiun Wang
发明人： Hengyuan Lee , Pang-Hsu Chen , Tai-Yuan Wu , Ching-Chiun Wang
IPC分类号： H01L27/24
CPC分类号： H01L45/1641 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1658
摘要： A resistive random access memory and a method for fabricating the same are provided. The method includes providing a bottom electrode formed on a substrate. A metal oxide layer is formed on the bottom electrode. An oxygen atom gettering layer is formed on the metal oxide layer. A top electrode is formed on the oxygen atom gettering layer. The previous mentioned structure is subjected to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, thus leaving a plurality of oxygen vacancies of the metal oxide layer.
摘要翻译：提供了一种电阻随机存取存储器及其制造方法。该方法包括提供形成在基板上的底部电极。在底部电极上形成金属氧化物层。在金属氧化物层上形成氧原子吸气层。在氧原子吸气层上形成顶部电极。对前述结构进行热处理，驱动金属氧化物层的氧原子迁移到氧原子吸气层中并与氧原子吸气层反应，从而留下金属氧化物层的多个氧空位。

23. 发明申请

US20100164062A1 METHOD OF MANUFACTURING THROUGH-SILICON-VIA AND THROUGH-SILICON-VIA STRUCTURE 审中-公开
标题翻译：通过硅晶体和通过硅结构制造方法
公开(公告)号：US20100164062A1
公开(公告)日：2010-07-01
申请号：US12480694
申请日：2009-06-09
申请人： Ching-Chiun Wang , Tai-Yuan Wu , Yu-Sheng Chen , Cha-Hsin Lin
发明人： Ching-Chiun Wang , Tai-Yuan Wu , Yu-Sheng Chen , Cha-Hsin Lin
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/90 , H01L21/76898 , H01L21/823475 , H01L23/481 , H01L27/0629 , H01L2224/05001 , H01L2224/05009 , H01L2224/05147 , H01L2224/05184 , H01L2224/05568 , H01L2224/056 , H01L2224/05647 , H01L2224/05684 , H01L2224/13022 , H01L2224/13025 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13157 , H01L2924/00014 , H01L2924/0105 , H01L2924/013
摘要： A method of manufacturing through-silicon-via (TSV) and a TSV structure are provided. The TSV structure includes a silicon substrate, an annular capacitor, a conductive through-via, a layer of low-k material, and a bump. The annular capacitor is within the silicon substrate and constituted of a first conductive layer, a capacitor dielectric layer, and a second conductive layer from the inside to the outside. The conductive through-via is disposed in the silicon substrate surrounded by the annular capacitor, and the layer of low-k material is between the annular capacitor and the conductive through-via. The bump is in touch with the conductive through-via for bonding other chip.
摘要翻译：提供了通过硅通孔（TSV）和TSV结构的方法。 TSV结构包括硅衬底，环形电容器，导电通孔，低k材料层和凸块。环形电容器在硅衬底内，由第一导电层，电容器电介质层和从内向外的第二导电层构成。导电通孔设置在由环形电容器包围的硅衬底中，低k材料层位于环形电容器和导电通孔之间。凸块与用于粘合其他芯片的导电通孔相接触。

24. 发明授权

US07700988B2 Metal-insulator-metal capacitor 有权
标题翻译：金属绝缘体金属电容器
公开(公告)号：US07700988B2
公开(公告)日：2010-04-20
申请号：US11386362
申请日：2006-03-21
申请人： Cha-Hsin Lin , Ching-Chiun Wang , Lurng-Shehng Lee
发明人： Cha-Hsin Lin , Ching-Chiun Wang , Lurng-Shehng Lee
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L28/56 , H01L21/02186 , H01L21/022 , H01L21/31604
摘要： A metal-insulator-metal (MIM) capacitor having a top electrode, a bottom electrode and a capacitor dielectric layer is provided. The top electrode is located over the bottom electrode and the capacitor dielectric layer is disposed between the top and the bottom electrode. The capacitor dielectric layer comprises several titanium oxide (TiO2) layers and at least one tetragonal structure material layer. The tetragonal structure material layer is disposed between two titanium oxide layers and each tetragonal structure material layer has the same or a different thickness. Leakage path can be cut off through the tetragonal material layer between the titanium oxide layers. In the meantime, the tetragonal structure material layer can induce the titanium oxide layers to transform into a high k rutile phase.
摘要翻译：提供了具有顶部电极，底部电极和电容器电介质层的金属 - 绝缘体金属（MIM）电容器。顶部电极位于底部电极之上，并且电容器介电层设置在顶部和底部电极之间。电容器介电层包括几个氧化钛（TiO 2）层和至少一个四方结构材料层。四方结构材料层设置在两个氧化钛层之间，每个四边形结构材料层具有相同或不同的厚度。可以通过钛氧化物层之间的四方材料层来切断泄漏路径。同时，四方结构材料层可以诱导氧化钛层转变成高k金红石相。

25. 发明申请

US20100038791A1 RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：电阻随机访问存储器及其制作方法
公开(公告)号：US20100038791A1
公开(公告)日：2010-02-18
申请号：US12334203
申请日：2008-12-12
申请人： Hengyuan Lee , Pang-Hsu Chen , Tai-Yuan Wu , Ching-Chiun Wang
发明人： Hengyuan Lee , Pang-Hsu Chen , Tai-Yuan Wu , Ching-Chiun Wang
IPC分类号： H01L29/45 , H01L21/44
CPC分类号： H01L45/1641 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1658
摘要： A resistive random access memory and a method for fabricating the same are provided. The method includes providing a bottom electrode formed on a substrate. A metal oxide layer is formed on the bottom electrode. An oxygen atom gettering layer is formed on the metal oxide layer. A top electrode is formed on the oxygen atom gettering layer. The previous mentioned structure is subjected to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, thus leaving a plurality of oxygen vacancies of the metal oxide layer.
摘要翻译：提供了一种电阻随机存取存储器及其制造方法。该方法包括提供形成在基板上的底部电极。在底部电极上形成金属氧化物层。在金属氧化物层上形成氧原子吸气层。在氧原子吸气层上形成顶部电极。对前述结构进行热处理，驱动金属氧化物层的氧原子迁移到氧原子吸气层中并与氧原子吸气层反应，从而留下金属氧化物层的多个氧空位。

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