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21. 发明申请

US20120306048A1 ELECTRICALLY PROGRAMMABLE METAL FUSE 有权
标题翻译：电气可编程金属保险丝
公开(公告)号：US20120306048A1
公开(公告)日：2012-12-06
申请号：US13149108
申请日：2011-05-31
申请人： Baozhen Li , Chunyan E. Tian , Chih-Chao Yang
发明人： Baozhen Li , Chunyan E. Tian , Chih-Chao Yang
IPC分类号： H01L23/525 , H01L21/02
CPC分类号： H01L23/5256 , G11C17/16 , G11C29/785 , H01L27/0207 , H01L2924/0002 , H01L2924/00
摘要： A metal electrically programmable fuse (“eFuse”) includes a metal strip, having a strip width, of a metal line adjoined to wide metal line portions, having widths greater than the metal strip width, at both ends of the metal strip. The strip width can be a lithographic minimum dimension, and the ratio of the length of the metal strip to the strip width is greater than 5 to localize heating around the center of the metal strip during programming. Localization of heating reduces required power for programming the metal eFuse. Further, a gradual temperature gradient is formed during the programming within a portion of the metal strip that is longer than the Blech length so that electromigration of metal gradually occurs reliably at the center portion of the metal strip. Metal line portions are provides at the same level as the metal eFuse to physically block debris generated during programming.
摘要翻译：金属电可编程保险丝（eFuse）包括在金属条的两端处具有与宽金属线部分相邻的金属线的具有宽度大于金属带宽度的宽度的金属带。条带宽度可以是光刻最小尺寸，并且金属条带的长度与条带宽度的比率大于5以在编程期间定位围绕金属条的中心的加热。加热的本地化减少了用于编程金属eFuse所需的电力。此外，在金属带的长于Blech长度的部分内的编程期间形成逐渐的温度梯度，使得金属的电迁移在金属带的中心部分逐渐发生。金属线部分提供与金属eFuse相同的水平，以物理阻挡编程期间产生的碎屑。

22. 发明申请

US20120261793A1 ELECTRICAL FUSE AND METHOD OF MAKING THE SAME 有权
标题翻译：电保险丝及其制造方法
公开(公告)号：US20120261793A1
公开(公告)日：2012-10-18
申请号：US13085568
申请日：2011-04-13
申请人： Chih-Chao Yang , Stephen M. Gates , Baozhen Li , Daniel C. Edelstein
发明人： Chih-Chao Yang , Stephen M. Gates , Baozhen Li , Daniel C. Edelstein
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An improved electrical-fuse (e-fuse) device including a dielectric layer having a first top surface, two conductive features embedded in the dielectric layer and a fuse element. Each conductive feature has a second top surface and a metal cap directly on the second top surface. Each metal cap has a third top surface that is above the first top surface of the dielectric layer. The fuse element is on the third top surface of each metal cap and on the first top surface of the dielectric layer. A method of forming the e-fuse device is also provided.
摘要翻译：一种改进的电熔丝（e-fuse）装置，包括具有第一顶表面的电介质层，嵌入介质层中的两个导电特征和熔丝元件。每个导电特征具有第二顶表面和直接在第二顶表面上的金属帽。每个金属盖具有在介电层的第一顶表面之上的第三顶表面。熔丝元件位于每个金属盖的第三顶表面上，并位于介质层的第一顶表面上。还提供了形成电熔丝装置的方法。

23. 发明授权

US07955971B2 Hybrid metallic wire and methods of fabricating same 失效
标题翻译：混合金属线及其制造方法
公开(公告)号：US07955971B2
公开(公告)日：2011-06-07
申请号：US12482777
申请日：2009-06-11
申请人： Chih-Chao Yang , Kaushik Chanda , Daniel Edelstein , Baozhen Li
发明人： Chih-Chao Yang , Kaushik Chanda , Daniel Edelstein , Baozhen Li
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76846 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A structure and methods of fabricating the structure. The structure comprising: a trench in a dielectric layer; an electrically conductive liner, an electrically conductive core conductor and an electrically conductive fill material filling voids between said liner and said core conductor.
摘要翻译：一种制造结构的结构和方法。该结构包括：介电层中的沟槽; 导电衬垫，导电芯导体和填充所述衬套和所述芯导体之间的空隙的导电填充材料。

24. 发明授权

US07830019B2 Via bottom contact and method of manufacturing same 有权
标题翻译：通过底部接触及其制造方法
公开(公告)号：US07830019B2
公开(公告)日：2010-11-09
申请号：US12431289
申请日：2009-04-28
申请人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
发明人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
IPC分类号： H01L23/04
CPC分类号： H01L21/76865 , H01L21/76805 , H01L21/76846 , H01L21/76886
摘要： A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
摘要翻译：制造器件的方法包括在形成在衬底和布线层中的蚀刻沟槽中沉积电迁移（EM）电阻材料。 EM电阻材料形成为与下面的扩散阻挡层和布线层电接触。该方法还包括形成与EM电阻材料和布线层电接触的通孔结构。该方法产生防止开路的结构。

25. 发明申请

US20100176514A1 INTERCONNECT WITH RECESSED DIELECTRIC ADJACENT A NOBLE METAL CAP 失效
标题翻译：与接触式介电相邻的金属盖互连
公开(公告)号：US20100176514A1
公开(公告)日：2010-07-15
申请号：US12351367
申请日：2009-01-09
申请人： Chih-Chao Yang , Shyng-Tsong Chen , Baozhen Li
发明人： Chih-Chao Yang , Shyng-Tsong Chen , Baozhen Li
IPC分类号： H01L23/532 , H01L21/4763
CPC分类号： H01L21/76849 , H01L21/02068 , H01L21/311 , H01L21/32136 , H01L21/76885 , H01L21/76886
摘要： The invention comprises a copper interconnect structure that includes a noble metal cap with dielectric immediately adjacent the copper/noble metal cap interface recessed from the noble metal cap.
摘要翻译：本发明包括铜互连结构，其包括具有电介质的贵金属盖，所述绝缘体紧邻于从贵金属帽凹入的铜/贵金属帽接口。

26. 发明申请

US20090200673A1 VIA BOTTOM CONTACT AND METHOD OF MANUFACTURING SAME 有权
标题翻译：通过底部接触及其制造方法
公开(公告)号：US20090200673A1
公开(公告)日：2009-08-13
申请号：US12431289
申请日：2009-04-28
申请人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
发明人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L21/76865 , H01L21/76805 , H01L21/76846 , H01L21/76886
摘要： A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
摘要翻译：制造器件的方法包括在形成在衬底和布线层中的蚀刻沟槽中沉积电迁移（EM）电阻材料。 EM电阻材料形成为与下面的扩散阻挡层和布线层电接触。该方法还包括形成与EM电阻材料和布线层电接触的通孔结构。该方法产生防止开路的结构。

27. 发明授权

US07397260B2 Structure and method for monitoring stress-induced degradation of conductive interconnects 有权
标题翻译：用于监测导电互连的应力诱导退化的结构和方法
公开(公告)号：US07397260B2
公开(公告)日：2008-07-08
申请号：US11163948
申请日：2005-11-04
申请人： Kaushik Chanda , Birendra Agarwala , Lawrence A. Clevenger , Andrew P. Cowley , Ronald G. Filippi , Jason P. Gill , Tom C. Lee , Baozhen Li , Paul S. McLaughlin , Du B. Nguyen , Hazara S. Rathore , Timothy D. Sullivan , Chih-Chao Yang
发明人： Kaushik Chanda , Birendra Agarwala , Lawrence A. Clevenger , Andrew P. Cowley , Ronald G. Filippi , Jason P. Gill , Tom C. Lee , Baozhen Li , Paul S. McLaughlin , Du B. Nguyen , Hazara S. Rathore , Timothy D. Sullivan , Chih-Chao Yang
IPC分类号： G01R31/02 , H01L23/58 , G01N25/20
CPC分类号： G01R31/2858 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).
摘要翻译：提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。至少一些导电互连件包括金属板，金属连接线和上金属通孔。所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

28. 发明申请

US20070115018A1 STRUCTURE AND METHOD FOR MONITORING STRESS-INDUCED DEGRADATION OF CONDUCTIVE INTERCONNECTS 有权
标题翻译：用于监测导电互连的应力诱导降解的结构和方法
公开(公告)号：US20070115018A1
公开(公告)日：2007-05-24
申请号：US11163948
申请日：2005-11-04
申请人： Kaushik Chanda , Birendra Agarwala , Lawrence Clevenger , Andrew Cowley , Ronald Filippi , Jason Gill , Tom Lee , Baozhen Li , Paul McLaughlin , Du Nguyen , Hazara Rathore , Timothy Sullivan , Chih-Chao Yang
发明人： Kaushik Chanda , Birendra Agarwala , Lawrence Clevenger , Andrew Cowley , Ronald Filippi , Jason Gill , Tom Lee , Baozhen Li , Paul McLaughlin , Du Nguyen , Hazara Rathore , Timothy Sullivan , Chih-Chao Yang
IPC分类号： G01R31/26
CPC分类号： G01R31/2858 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).
摘要翻译：提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。至少一些导电互连件包括金属板，金属连接线和上金属通孔。所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

29. 发明授权

US08749293B2 Stackable programmable passive device and a testing method 失效
标题翻译：可堆叠可编程无源器件和测试方法
公开(公告)号：US08749293B2
公开(公告)日：2014-06-10
申请号：US13529557
申请日：2012-06-21
申请人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
发明人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
IPC分类号： G06G7/19 , H01L29/00
CPC分类号： H01L27/101 , H01L23/5252 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable passive device comprising a first node and a second node. A plurality of passive device elements electrically coupled to the first node. A plurality of switches are electrically coupled to at least the second node and selectively coupled to a number of the plurality of passive device elements to provide the programmable passive device with a pre-determined value.
摘要翻译：一种包括第一节点和第二节点的可编程无源设备。电耦合到第一节点的多个无源器件元件。多个开关电耦合到至少第二节点并且选择性地耦合到多个无源器件元件，以向可编程无源器件提供预定值。

30. 发明申请

US20120261724A1 STACKABLE PROGRAMMABLE PASSIVE DEVICE AND A TESTING METHOD 失效
标题翻译：可堆叠可编程被动设备和测试方法
公开(公告)号：US20120261724A1
公开(公告)日：2012-10-18
申请号：US13529557
申请日：2012-06-21
申请人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
发明人： Fen Chen , Douglas D. Coolbaugh , Baozhen Li
IPC分类号： H01L23/52 , H01L21/326
CPC分类号： H01L27/101 , H01L23/5252 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable passive device comprising a first node and a second node. A plurality of passive device elements electrically coupled to the first node. A plurality of switches are electrically coupled to at least the second node and selectively coupled to a number of the plurality of passive device elements to provide the programmable passive device with a pre-determined value.
摘要翻译：一种包括第一节点和第二节点的可编程无源设备。电耦合到第一节点的多个无源器件元件。多个开关电耦合到至少第二节点并且选择性地耦合到多个无源器件元件，以向可编程无源器件提供预定值。

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