专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06635311B1 Methods utilizing scanning probe microscope tips and products therefor or products thereby 有权
标题翻译：使用扫描探针显微镜尖端及其产品或其产品的方法
公开(公告)号：US06635311B1
公开(公告)日：2003-10-21
申请号：US09477997
申请日：2000-01-05
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D500
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： A method of direct-write nanolithography comprising: providing a solid substrate comprising a surface; providing a nanoscopic tip coated with patterning compound; and contacting the coated tip with the substrate, so that the patterning compound is delivered to the substrate so as to produce a desired pattern in submicrometer dimensions. Nanolithographic resolution can be affected by substrate grain size, diffusion rate of the patterning compound, tip-substrate contact time, the rate of transport of the patterning compound from the tip to the substrate, and tip sharpness. The method is a useful tool for fabrication of nanoscale structures.
摘要翻译：一种直写式纳米光刻方法，包括：提供包含表面的固体基质; 提供涂有图案化合物的纳米级尖端; 并使涂覆的末端与基底接触，使得图案化化合物被递送到基底，从而在亚微米尺寸上产生所需的图案。纳米光刻分辨率可能受衬底晶粒尺寸，图形化合物的扩散速率，尖端 - 衬底接触时间，图案化合物从尖端到衬底的传输速率和尖端锐度的影响。该方法是制造纳米级结构的有用工具。

22. 发明申请

US20120295029A1 METHODS UTILIZING SCANNING PROBE MICROSCOPE TIPS AND PRODUCTS THEREFOR OR PRODUCED THEREBY 审中-公开
标题翻译：使用扫描探针显微镜的方法和产品或其生产的产品
公开(公告)号：US20120295029A1
公开(公告)日：2012-11-22
申请号：US13450333
申请日：2012-04-18
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D5/00 , H01L21/02
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： The invention provides a nanolithographic method, comprising: (i) providing a substrate; (ii) providing a nanoscopic tip coated with a patterning compound; (iii) contacting the coated tip with the substrate so that the patterning compound is applied to the substrate to produce a desired pattern; and (iv) wherein the patterning compound is anchored to the substrate.
摘要翻译：本发明提供一种纳米光刻方法，包括：（i）提供基底; （ii）提供涂有图形化合物的纳米级尖端; （iii）使涂覆的尖端与基底接触，使得图案化化合物被施加到基底以产生所需的图案; 和（iv）其中图案化化合物锚定到基底上。

23. 发明授权

US08163345B2 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US08163345B2
公开(公告)日：2012-04-24
申请号：US12534086
申请日：2009-07-31
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的基材和用于进行DPN的试剂盒。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

24. 发明授权

US08063430B2 Semiconductor devices and methods of manufacturing and operating same 有权
标题翻译：半导体器件及其制造和操作方法相同
公开(公告)号：US08063430B2
公开(公告)日：2011-11-22
申请号：US12289055
申请日：2008-10-20
申请人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
发明人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L51/0048 , H01L51/0541
摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
摘要翻译：可以公开半导体器件以及制造和操作半导体器件的方法。半导体器件可以包括不同的纳米结构。半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。纳米线可以是双极碳纳米管（CNTs）。第一元件可以是沟道层。第二元件可以是电荷陷阱层。在这方面，半导体器件可以是晶体管或存储器件。

25. 发明申请

US20110210765A1 RECONFIGURABLE SEMICONDUCTOR DEVICE 有权
标题翻译：可重构半导体器件
公开(公告)号：US20110210765A1
公开(公告)日：2011-09-01
申请号：US13089206
申请日：2011-04-18
申请人： Seunghun Hong , Sung Myung , Kwang Heo
发明人： Seunghun Hong , Sung Myung , Kwang Heo
IPC分类号： H03K3/01
CPC分类号： H01L29/7883 , B82Y10/00 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7887
摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.
摘要翻译：公开了可重新配置的半导体器件。该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在端子电极和形成在第二绝缘材料上的控制栅极。通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。控制栅极被施加正向偏压或反向偏压，然后偏压被切断。半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

26. 发明申请

US20100032409A1 FABRICATING A GRAPHENE NANO-DEVICE 有权
标题翻译：制作石墨纳米器件
公开(公告)号：US20100032409A1
公开(公告)日：2010-02-11
申请号：US12211006
申请日：2008-09-15
申请人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
发明人： Seunghun Hong , Joohyung Lee , Tae Hyun Kim
IPC分类号： B44C1/22
CPC分类号： H01L29/16 , B82Y10/00 , H01L21/3081 , H01L21/3083 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching.
摘要翻译：提供了纳米级石墨烯结构制造技术。在石墨烯层上形成可用作掩模的氧化物纳米线，然后进行离子束蚀刻。通过在离子束蚀刻之后去除剩余的氧化物纳米线来制造纳米尺度的石墨烯结构。

27. 发明授权

US07569252B2 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US07569252B2
公开(公告)日：2009-08-04
申请号：US10449685
申请日：2003-06-02
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/84 , Y10S977/857 , Y10S977/863 , Y10S977/877 , Y10T428/24917 , Y10T436/24
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN.The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的基材和用于进行DPN的试剂盒。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

28. 发明授权

US07524534B2 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US07524534B2
公开(公告)日：2009-04-28
申请号：US10937877
申请日：2004-09-10
申请人： Chad A. Mirkin , Richard Piner , Seunghun Hong
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D1/26
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN), which utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid-state substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging preformed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供一种称为“浸笔”纳米光刻（DPN）的光刻方法，其使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态衬底（例如，金）作为“纸”，以及对固态衬底具有化学亲和力的分子作为“油墨”。在DPN中使用分子从SPM尖端到固态基底的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端预成型的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

29. 发明申请

US20090101962A1 Semiconductor devices and methods of manufacturing and operating same 有权
标题翻译：半导体器件和制造和操作方法相同
公开(公告)号：US20090101962A1
公开(公告)日：2009-04-23
申请号：US12289055
申请日：2008-10-20
申请人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
发明人： Seunghun Hong , Sung Myung , Jiwoon Im , Minbaek Lee
IPC分类号： H01L29/768 , H01L21/336
CPC分类号： H01L29/792 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L51/0048 , H01L51/0541
摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.
摘要翻译：可以公开半导体器件以及制造和操作半导体器件的方法。半导体器件可以包括不同的纳米结构。半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。纳米线可以是双极碳纳米管（CNTs）。第一元件可以是沟道层。第二元件可以是电荷陷阱层。在这方面，半导体器件可以是晶体管或存储器件。

30. 发明授权

US07182996B2 Deposting nanowires on a substrate 失效
标题翻译：在衬底上沉积纳米线
公开(公告)号：US07182996B2
公开(公告)日：2007-02-27
申请号：US10718999
申请日：2003-11-21
申请人： Seunghun Hong
发明人： Seunghun Hong
IPC分类号： B32B3/00 , B32B15/08
CPC分类号： C30B29/605 , B82Y10/00 , H01L51/0021 , H01L51/0048 , H01L51/0052 , H01L51/0545 , Y10T428/24917 , Y10T428/24926 , Y10T428/249941 , Y10T428/249942 , Y10T428/31681
摘要： Processes for depositing nanowires on a substrate and nanowire-based devices that can be formed using these processes are described. In one embodiment, a process includes forming an organic layer on an electrically conductive layer formed on the substrate. The organic layer includes a first region and a second region. The first region has an affinity for the nanowires and is electrically conductive. The process also includes contacting the organic layer with a composition including the nanowires dispersed in a compatible solvent for a time sufficient to selectively deposit at least one of the nanowires on the first region of the organic layer.
摘要翻译：描述了可以使用这些工艺形成的衬底和基于纳米线的器件上沉积纳米线的工艺。在一个实施例中，一种方法包括在形成在基底上的导电层上形成有机层。有机层包括第一区域和第二区域。第一区域对于纳米线具有亲和力并且是导电的。该方法还包括使有机层与包含分散在相容溶剂中的纳米线的组合物接触足够的时间以选择性地沉积有机层的第一区域上的至少一个纳米线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式