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21. 发明申请

US20120280306A1 ONE-TRANSISTOR COMPOSITE-GATE MEMORY 有权
标题翻译：单晶体复合栅存储器
公开(公告)号：US20120280306A1
公开(公告)日：2012-11-08
申请号：US13554577
申请日：2012-07-20
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L29/792
CPC分类号： G11C11/5671 , G11C8/12 , G11C16/0416 , G11C16/0466 , H01L29/513 , H01L29/792
摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.
摘要翻译：单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

22. 发明申请

US20100091574A1 ONE-TRANSISTOR COMPOSITE-GATE MEMORY 有权
标题翻译：单晶体复合栅存储器
公开(公告)号：US20100091574A1
公开(公告)日：2010-04-15
申请号：US12637989
申请日：2009-12-15
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： G11C16/04 , H01L29/792 , H01L21/326
CPC分类号： G11C11/5671 , G11C8/12 , G11C16/0416 , G11C16/0466 , H01L29/513 , H01L29/792
摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.
摘要翻译：单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

23. 发明授权

US07531395B2 Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistors 有权
标题翻译：形成包含外延硅的层的方法以及形成场效应晶体管的方法
公开(公告)号：US07531395B2
公开(公告)日：2009-05-12
申请号：US11035298
申请日：2005-01-12
申请人： Eric R. Blomiley , Gurtej S. Sandhu , Cem Basceri , Nirmal Ramaswamy
发明人： Eric R. Blomiley , Gurtej S. Sandhu , Cem Basceri , Nirmal Ramaswamy
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02642
摘要： Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes etching an opening into a silicate glass-comprising material received over a monocrystalline material. The etching is conducted to the monocrystalline material effective to expose the monocrystalline material at a base of the opening. A silicon-comprising layer is epitaxially grown within the opening from the monocrystalline material exposed at the base of the opening. The silicate glass-comprising material is etched from the substrate effective to leave a free-standing projection of the epitaxially grown silicon-comprising layer projecting from the monocrystalline material which was at the base of the opening. Other implementations and aspects are contemplated.
摘要翻译：公开了形成包含外延硅的层的方法和形成场效应晶体管的方法。形成包含外延硅的层的方法包括将开口蚀刻成通过单晶材料接收的含硅玻璃的材料。对单晶材料进行蚀刻，以有效地在开口的基部暴露单晶材料。在开口内从暴露在开口底部的单晶材料外延生长含硅层。从衬底上蚀刻含硅玻璃的材料有效地留下从开口底部的单晶材料突出的外延生长的含硅层的独立投影。考虑其他实现和方面。

24. 发明授权

US07439136B2 Method of forming a layer comprising epitaxial silicon 有权
标题翻译：形成包含外延硅的层的方法
公开(公告)号：US07439136B2
公开(公告)日：2008-10-21
申请号：US11730039
申请日：2007-03-29
申请人： Nirmal Ramaswamy , Gurtej S. Sandhu , Cem Basceri , Eric R. Blomiley
发明人： Nirmal Ramaswamy , Gurtej S. Sandhu , Cem Basceri , Eric R. Blomiley
IPC分类号： H01L21/336
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/66553 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.
摘要翻译：本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。考虑了其他方面和实现。

25. 发明授权

US07320911B2 Methods of forming pluralities of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US07320911B2
公开(公告)日：2008-01-22
申请号：US11006331
申请日：2004-12-06
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L21/70 , H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid previous material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid previous material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid previous material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.
摘要翻译：形成多个电容器的方法包括提供包括侧壁的多个电容器电极。多个电容器电极至少部分地由与侧壁接合的保持结构支撑，保持结构包括透液材料。电容器电介质材料沉积在电容器电极上，通过保持结构的流体可渗透材料，其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上，有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。还考虑了与制造方法无关的集成电路。

26. 发明授权

US07273660B2 Mixed composition interface layer and method of forming 有权
标题翻译：混合组成界面层和成型方法
公开(公告)号：US07273660B2
公开(公告)日：2007-09-25
申请号：US10228404
申请日：2002-08-26
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： B32B9/00
CPC分类号： H01L21/0228 , C23C16/029 , C23C16/18 , C23C16/405 , C23C16/45525 , H01L21/02183 , H01L21/28562 , H01L21/31604 , H01L21/31683 , H01L28/40 , H01L28/60 , Y10T29/417 , Y10T428/24917 , Y10T428/24926
摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
摘要翻译：界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。包含第二化学元素的第二层可以形成在界面层上。第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

27. 发明授权

US07217630B2 Methods of forming hafnium oxide 有权
标题翻译：形成氧化铪的方法
公开(公告)号：US07217630B2
公开(公告)日：2007-05-15
申请号：US10928547
申请日：2004-08-26
申请人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
发明人： Cem Basceri , F. Daniel Gealy , Gurtej S. Sandhu
IPC分类号： H01L21/20
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
摘要翻译：本发明包括形成含铪材料的方法，例如氧化铪。在一个方面，提供了一种半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。随后，利用第二反应条件在种子材料上生长第二含铪材料。第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。第二含铪材料可以是例如非晶相。然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

28. 发明授权

US07128787B2 Atomic layer deposition method 失效
标题翻译：原子层沉积法
公开(公告)号：US07128787B2
公开(公告)日：2006-10-31
申请号：US10956925
申请日：2004-09-30
申请人： Paul J. Castovillo , Cem Basceri , Garo J. Derderian , Gurtej S. Sandhu
发明人： Paul J. Castovillo , Cem Basceri , Garo J. Derderian , Gurtej S. Sandhu
IPC分类号： C30B25/14 , C30B25/16
CPC分类号： C30B25/14 , C23C14/0641 , C23C14/081 , C23C16/34 , C23C16/403 , C23C16/45527 , C23C16/45531
摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.
摘要翻译：原子层沉积方法包括将半导体衬底定位在原子层沉积室内。第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。在形成第一单层之后，反应性中间气体流到沉积室内的衬底。反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。考虑了其他方面和实现。

29. 发明授权

US07101767B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07101767B2
公开(公告)日：2006-09-05
申请号：US10649311
申请日：2003-08-25
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： H01L21/20
CPC分类号： H01L29/66181 , H01L28/91
摘要： In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed to be laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. A spacer is formed within the opening by anisotropically etching the spacing layer. The spacer is laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. After forming a first capacitor electrode layer laterally over the spacer, at least a portion of the spacer is removed and a capacitor dielectric region and a second capacitor electrode layer are formed over the first capacitor electrode layer.
摘要翻译：在一个实施方案中，电容器电极形成层之间的开口形成在衬底上。间隔层沉积在电容器电极形成层上方至少在开口侧壁的上部的开口内。与开口内的高度内部相比，间隔层形成为在开口内的正面外侧处侧向变厚。通过各向异性蚀刻间隔层，在开口内形成间隔物。与开口内的正面内部相比，间隔件在开口内的正面外侧处侧向变厚。在间隔物上横向形成第一电容器电极层之后，去除间隔物的至少一部分，并且在第一电容器电极层上方形成电容器电介质区域和第二电容器电极层。

30. 发明授权

US06908639B2 Mixed composition interface layer and method of forming 失效
标题翻译：混合组成界面层和成型方法
公开(公告)号：US06908639B2
公开(公告)日：2005-06-21
申请号：US09825087
申请日：2001-04-02
申请人： Cem Basceri , Gurtej S. Sandhu
发明人： Cem Basceri , Gurtej S. Sandhu
IPC分类号： C23C16/02 , C23C16/18 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/285 , H01L21/316 , B05D5/12 , C23C14/00 , C23C16/00 , H01L21/20 , H01G7/00
CPC分类号： H01L21/0228 , C23C16/029 , C23C16/18 , C23C16/405 , C23C16/45525 , H01L21/02183 , H01L21/28562 , H01L21/31604 , H01L21/31683 , H01L28/40 , H01L28/60 , Y10T29/417 , Y10T428/24917 , Y10T428/24926
摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
摘要翻译：界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。包含第二化学元素的第二层可以形成在界面层上。第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

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