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21. 发明申请

US20050106813A1 Method of manufacturing flash memory device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20050106813A1
公开(公告)日：2005-05-19
申请号：US10745165
申请日：2003-12-23
申请人： Seong Lee , Sang Kwak , Sang Park
发明人： Seong Lee , Sang Kwak , Sang Park
IPC分类号： H01L21/76 , H01L21/336 , H01L21/461 , H01L21/8234 , H01L21/8247 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L27/105 , H01L27/11526 , H01L27/11546
摘要： Provided is a method of manufacturing a flash memory device. In a flash memory device using a self-aligned shallow trench isolation scheme, a buffer oxide layer is formed between a first polysilicon layer and a nitride layer. After a polishing process for forming a field oxide film is performed, a buffer oxide layer is used as an etch-prevention layer in the process of stripping the nitride layer and the buffer oxide layer is stripped in a cleaning process before a second polysilicon layer is deposited. It is thus possible not only to prevent phosphorous ions contained in an H3PO4 solution used in the process of stripping the nitride layer from diffusing into the grain boundary of the first polysilicon layer, but also to reduce the time when the first polysilicon layer is exposed to a HF cleaner used in the cleaning process before the second polysilicon layer is deposited. Therefore, the present invention has effects that it can enhance the properties of a gate oxide layer and a gate electrode by minimizing an attack of a fluorine radical contained in the HF cleaner against the first polysilicon layer.
摘要翻译：提供一种制造闪速存储器件的方法。在使用自对准浅沟槽隔离方案的闪存器件中，在第一多晶硅层和氮化物层之间形成缓冲氧化物层。在进行用于形成场氧化膜的抛光工艺之后，在剥离氮化物层的过程中使用缓冲氧化物层作为防蚀层，并且在第二多晶硅层为第二多晶硅层之前在清洁过程中剥离缓冲氧化物层存放因此，不仅可以防止在剥离氮化物层的过程中使用的H 3 PO 4·4溶液中所含的磷离子扩散到第一而且在第二多晶硅层沉积之前也减少了第一多晶硅层暴露于清洁工艺中使用的HF清洁剂的时间。因此，本发明具有通过使包含在HF清洁器中的氟自由基相对于第一多晶硅层的侵蚀最小化来提高栅极氧化物层和栅电极的性质的效果。

22. 发明授权

US06821557B2 Tungsten film coating method using tungsten oxide powders 有权
标题翻译：使用氧化钨粉末的钨膜涂覆方法
公开(公告)号：US06821557B2
公开(公告)日：2004-11-23
申请号：US10340505
申请日：2003-01-10
申请人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Yoon-Sik Park
发明人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Yoon-Sik Park
IPC分类号： B05D112
CPC分类号： C23C26/00
摘要： Disclosed is a tungsten film coating method using tungsten oxide powders including the steps of contacting the tungsten oxide powders with a metal substrate and carrying out thermal reduction treatment thereon at a temperature of at least 650° C. under a hydrogen atmosphere just to coat the tungsten film on the metal substrate. Accordingly, the present invention enables to provide a simple method of coating a tungsten thin film on a metal substrate using the phenomenon of tungsten migration through vapor phase when thermal reduction treatment is carried out on tungsten oxide powders without using previous chemical or physical vapor depositions requiring expensive precision equipments or causing environmental pollution.
摘要翻译：公开了一种使用氧化钨粉末的钨膜涂覆方法，其包括以下步骤：使钨氧化物粉末与金属基底接触，并在氢气氛下在至少650℃的温度下对其进行热还原处理，以涂覆钨薄膜在金属基板上。因此，本发明能够提供一种在金属基板上涂覆钨薄膜的简单方法，该方法使用钨氧化物粉末进行热还原处理时，通过气相的钨迁移现象，而不需要先前的化学或物理气相沉积昂贵的精密设备或造成环境污染。

23. 发明授权

US5294269A Repeated sintering of tungsten based heavy alloys for improved impact toughness 失效
标题翻译：重复烧结钨基重合金，提高冲击韧性
公开(公告)号：US5294269A
公开(公告)日：1994-03-15
申请号：US051425
申请日：1993-04-23
申请人： Young M. Lee , Kyung J. Park , Kil S. Churn , Woon H. Baek , Heung S. Song , Joon W. Noh , Moon L. Hong , Seong Lee , Eun P. Kim
发明人： Young M. Lee , Kyung J. Park , Kil S. Churn , Woon H. Baek , Heung S. Song , Joon W. Noh , Moon L. Hong , Seong Lee , Eun P. Kim
IPC分类号： B22F3/24 , B22F5/00 , C22C1/04 , C22C27/04 , C22F1/00 , C22F1/18 , C22C27/00
CPC分类号： C22C1/045 , B22F3/24 , C22C27/04 , C22F1/18
摘要： A method for heat-treatment of tungsten based alloys, capable of improving impact toughness while keeping tensile strength and elongation. The method comprises maintaining a sintered tungsten based alloy consisting of 86 to 99 weight % tungsten and the balance at least one selected from a group consisting of nickel, iron, copper, cobalt and molybdenum, at a temperature ranged from 950.degree. to 1,350.degree. C. for a maintenance time of one minute to 24 hours, quenching the sintered alloy in water or in oil, and repeating the maintaining and quenching steps.
摘要翻译：一种能够在保持拉伸强度和伸长率的同时提高冲击韧性的钨基合金的热处理方法。该方法包括在950至1350℃的温度范围内保持由86至99重量％的钨组成的余量的钨基合金，余量为选自镍，铁，铜，钴和钼的至少一种。维持时间为1分钟至24小时，将烧结合金淬火在水中或油中，重复维持和淬火步骤。

24. 发明授权

US07496488B2 Multi-scale finite-volume method for use in subsurface flow simulation 有权
标题翻译：用于地下流动模拟的多尺度有限体积法
公开(公告)号：US07496488B2
公开(公告)日：2009-02-24
申请号：US10997539
申请日：2004-11-23
申请人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
发明人： Patrick Jenny , Seong Lee , Hamdi A. Tchelepi
IPC分类号： G06G7/48 , G01V3/38 , G01V1/38 , G01V1/00
CPC分类号： E21B49/00 , E21B43/00 , G01V11/00 , G06F17/5018 , G06F2217/16
摘要： A multi-scale finite-volume (MSFV) method to solve elliptic problems with a plurality of spatial scales arising from single or multi-phase flows in porous media is provided. The method efficiently captures the effects of small scales on a coarse grid, is conservative, and treats tensor permeabilities correctly. The underlying idea is to construct transmissibilities that capture the local properties of a differential operator. This leads to a multi-point discretization scheme for a finite-volume solution algorithm. Transmissibilities for the MSFV method are preferably constructed only once as a preprocessing step and can be computed locally.
摘要翻译：提供了一种多尺度有限体积（MSFV）方法，用于解决多孔介质中单相或多相流产生的多个空间尺度的椭圆问题。该方法有效地捕获了小格子对粗网格的影响，是保守的，并且正确地对待张量渗透率。基本思想是构建捕获差分算子的局部属性的透射率。这导致了用于有限体积解算法的多点离散化方案。 MSFV方法的透射优选仅作为预处理步骤构造一次，并且可以在本地计算。

25. 发明申请

US20070193893A1 Structure of cap having storage space 有权
标题翻译：具有存储空间的盖的结构
公开(公告)号：US20070193893A1
公开(公告)日：2007-08-23
申请号：US10592028
申请日：2005-03-08
申请人： Jeong-Min Lee , Seong Lee
发明人： Jeong-Min Lee , Seong Lee
IPC分类号： B65D25/08
CPC分类号： B65D51/2878 , B65D51/2864 , Y10S215/08
摘要： A cap assembly that can be associated with a container storing a primary material includes a lid fixed on a top of the container and having an exhausting portion projected upward, a cap main body detachably coupled to the exhausting portion of the lid and having a storage tube extending downward to define a storage chamber for storing a secondary material, and an inner cap body detachably coupled to the storage tube.
摘要翻译：可以与容纳主要材料的容器相关联的盖组件包括固定在容器的顶部上并具有向上突出的排出部分的盖，可拆卸地联接到盖的排出部分的盖主体，并具有储存管向下延伸以限定用于存储次级材料的储存室，以及可拆卸地联接到储存管的内盖主体。

26. 发明申请

US20070114540A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070114540A1
公开(公告)日：2007-05-24
申请号：US11600870
申请日：2006-11-17
申请人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
发明人： Seong Lee , Kyeong Min , Soo Kim , Min Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.
摘要翻译：本文公开了一种氮化物半导体发光器件，其包括发射不同波长的光的多个有源层。该器件包括p型和n型氮化物层，以及顺序堆叠在p型和n型氮化物层之间以发射具有不同波长的光的多个有源层。有源层至少包括发射第一波长光的第一有源层和发射波长比第一波长光长的第二波长光的第二有源层。第一和第二有源层都由交替布置的至少一个量子阱层和量子势垒层构成，并且第一有源层设置成比第二有源层更靠近p型氮化物层。第一有源层的量子阱层的数量小于第二有源层的量子阱层的数量。

27. 发明申请

US20060228322A1 Method for improving conversion rate of oil soluble unsaturated lipids into water-soluble lipids 失效
标题翻译：将油溶性不饱和脂质转化率提高为水溶性脂质的方法
公开(公告)号：US20060228322A1
公开(公告)日：2006-10-12
申请号：US11388417
申请日：2006-03-24
申请人： Seong Lee , Soon-Kee Sung , Sung Kim , Jung Yi
发明人： Seong Lee , Soon-Kee Sung , Sung Kim , Jung Yi
IPC分类号： C07C237/02 , A61K8/46
CPC分类号： C11C3/00 , C07C51/412 , C07C57/03 , C07C57/12
摘要： Disclosed relates to a method for improving a conversion rate of oil soluble unsaturated lipids into water-soluble lipids and, more particularly, to a method for improving a conversion rate of oil soluble unsaturated lipids into water-soluble lipids that forms an unsaturated lipid-chloride derivative having an increased reaction activity by using a pyridine-thionyl chloride as a catalyst, not directly causing a reaction between the unsaturated lipids and amino acids, or that applies an emulsifier to cause a reaction between the unsaturated lipids and amino acids so as to minimize the size of lipid particles to a nano-size of less than 50 nm, thus improving the reaction conversion rate to more than 99%.
摘要翻译：本发明涉及提高油溶性不饱和脂质转化为水溶性脂质的转化率的方法，更具体地说，涉及提高油溶性不饱和脂质转化成形成不饱和脂质氯化物的水溶性脂质的转化率的方法通过使用吡啶 - 亚硫酰氯作为催化剂具有增加的反应活性的衍生物，不直接引起不饱和脂和氨基酸之间的反应，或者使用乳化剂引起不饱和脂和氨基酸之间的反应，从而使脂质颗粒的尺寸为纳米尺寸小于50nm，从而将反应转化率提高到99％以上。

28. 发明申请

US20060125041A1 Transistor using impact ionization and method of manufacturing the same 审中-公开
标题翻译：使用冲击电离的晶体管及其制造方法
公开(公告)号：US20060125041A1
公开(公告)日：2006-06-15
申请号：US11296152
申请日：2005-12-06
申请人： Jong Yang , In Baek , Ki Im , Chang Ahn , Won Cho , Seong Lee
发明人： Jong Yang , In Baek , Ki Im , Chang Ahn , Won Cho , Seong Lee
IPC分类号： H01L27/095
CPC分类号： H01L29/66659 , H01L21/26586 , H01L21/28052 , H01L21/28202 , H01L29/495 , H01L29/518 , H01L29/665 , H01L29/66643 , H01L29/7835 , H01L29/7839
摘要： A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region. The drain includes a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.
摘要翻译：提供了使用冲击电离的晶体管及其制造方法。栅极电介质层，栅极以及第一和第二间隔物形成在半导体衬底上。第一杂质层与第一间隔物隔开形成，并且通过使用栅极和第一和第二间隔物作为掩模在半导体衬底上进行倾斜离子注入，形成第二杂质层与其间的第二间隔物膨胀和重叠。源极和漏极分别形成在半导体衬底上以与第一和第二间隔物自对准，由此在半导体衬底中的源极和漏极之间限定电离区域。源包括与电离区形成肖特基结的第一硅化物层。漏极包括与第二间隔物重叠的第二杂质层的一部分和与第二间隔物对准的第二硅化物层以与第二杂质层形成欧姆接触。

29. 发明申请

US20060000698A1 Dial knob of washing machine and manufacturing method thereof 审中-公开
公开(公告)号：US20060000698A1
公开(公告)日：2006-01-05
申请号：US11048742
申请日：2005-02-03
申请人： Seong Yoon , Bong Lee , Sung Gong , Bo Kim , Seong Lee , Dae Kwon
发明人： Seong Yoon , Bong Lee , Sung Gong , Bo Kim , Seong Lee , Dae Kwon
IPC分类号： H01H19/00
CPC分类号： D06F39/005 , H01H19/025 , Y10T29/49599 , Y10T29/49826 , Y10T29/49885 , Y10T29/49995
摘要： A dial knob of a washing machine is provided. In the dial knob, a dial is inserted into a center part of a knob guard, and a periphery edge of the knob is formed to be lustrous. A lamp window body is securely attached on a rear surface of the knob guard. The knob guard is formed of an aluminum material. Thereafter, a front surface of the knob guard is formed to be lusterless and an edge of the front surface is formed to be lustrous. Finally, the dial is connected to the lamp window body.

30. 发明申请

US20050285226A1 Parallel capacitor of semiconductor device 有权
标题翻译：半导体器件并联电容器
公开(公告)号：US20050285226A1
公开(公告)日：2005-12-29
申请号：US11159733
申请日：2005-06-23
申请人： Seong Lee
发明人： Seong Lee
IPC分类号： H01L27/04 , H01L21/02 , H01L23/522 , H01L27/06 , H01L31/062
CPC分类号： H01L27/0688 , H01L23/5223 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a parallel capacitor of a semiconductor device. According to the present invention, a first capacitor and a second capacitor are formed in different layers of the same region, wherein a metal layer connected to an upper electrode of the first capacitor is formed in the same layer as a metal layer connected to a lower electrode of the second capacitor. Thus, twp capacitors can be connected in parallel only with a metal layer composed of three layers. Accordingly, the present invention is advantageous in that it can reduce process steps for forming multiple metal layers, lower a step and cut manufacture cost.
摘要翻译：这里公开了半导体器件的并联电容器。根据本发明，第一电容器和第二电容器形成在相同区域的不同层中，其中连接到第一电容器的上电极的金属层形成在与连接到下层的金属层相同的层中第二电容器的电极。因此，两个电容器可以仅与由三层组成的金属层并联连接。因此，本发明的优点在于可以减少形成多个金属层的工艺步骤，降低步骤并降低制造成本。

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