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21. 发明授权

US07235436B1 Method for doping structures in FinFET devices 有权
标题翻译： FinFET器件掺杂结构的方法
公开(公告)号：US07235436B1
公开(公告)日：2007-06-26
申请号：US10614051
申请日：2003-07-08
申请人： Ming-Ren Lin , Zoran Krivokapic , Haihong Wang , Bin Yu
发明人： Ming-Ren Lin , Zoran Krivokapic , Haihong Wang , Bin Yu
IPC分类号： H01L21/84
CPC分类号： H01L21/845 , H01L27/1211 , H01L29/66795 , H01L29/785
摘要： A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin structure of the first area and the second area, and annealing the first area and the second area to dope the fin structures.
摘要翻译：在FinFET器件中掺杂鳍结构的方法包括在第一区域和第二区域的鳍结构上形成第一玻璃层。该方法还包括从第二区域去除第一玻璃层，在第一区域和第二区域的翅片结构上形成第二玻璃层，并退火第一区域和第二区域以掺杂翅片结构。

22. 发明授权

US07211489B1 Localized halo implant region formed using tilt pre-amorphization implant and laser thermal anneal 有权
标题翻译：使用倾斜预非晶化植入和激光热退火形成的局部化的晕圈植入区
公开(公告)号：US07211489B1
公开(公告)日：2007-05-01
申请号：US10934378
申请日：2004-09-07
申请人： Qi Xiang , Robert B. Ogle , Eric N. Paton , Cyrus E. Tabery , Bin Yu
发明人： Qi Xiang , Robert B. Ogle , Eric N. Paton , Cyrus E. Tabery , Bin Yu
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/26506 , H01L21/26586 , H01L29/1083 , H01L29/665 , H01L29/6653 , H01L29/6659
摘要： The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.
摘要翻译：本发明能够制造改进的高可靠性，高密度的半导体器件。本发明通过减小诸如栅极沟道长度的半导体器件结构的尺寸来提供高密度半导体器件。通过使用在器件通道中形成的高度局部化的注入区来防止短沟道效应。通过倾斜预非晶化植入和晕圈植入区域的激光热退火形成高度局部化的注入区域。

23. 发明授权

US07196374B1 Doped structure for FinFET devices 有权
标题翻译： FinFET器件的掺杂结构
公开(公告)号：US07196374B1
公开(公告)日：2007-03-27
申请号：US10653274
申请日：2003-09-03
申请人： Ming-Ren Lin , Bin Yu
发明人： Ming-Ren Lin , Bin Yu
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L29/42384 , H01L29/4908 , H01L29/66795 , H01L29/78687
摘要： A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on the first and second side surfaces of the fin structure, a first gate electrode formed adjacent the dielectric layer on the first side surface of the fin structure, a second gate electrode formed adjacent the dielectric layer on the second side surface of the fin structure, and a doped structure formed on an upper surface of the fin structure in the channel region of the semiconductor device.
摘要翻译：半导体器件包括衬底和衬底上的绝缘层。半导体器件还包括形成在绝缘层上的翅片结构，其中鳍结构包括第一和第二侧表面，形成在鳍结构的第一和第二侧表面上的电介质层，形成在电介质层附近的第一栅电极在翅片结构的第一侧表面上形成与鳍结构的第二侧表面上的电介质层相邻的第二栅电极，以及在半导体器件的沟道区中形成在鳍结构的上表面上的掺杂结构。

24. 发明授权

US07183152B1 Epitaxially grown fin for FinFET 有权
标题翻译： FinFET的外延生长鳍
公开(公告)号：US07183152B1
公开(公告)日：2007-02-27
申请号：US10975475
申请日：2004-10-29
申请人： Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
发明人： Srikanteswara Dakshina-Murthy , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/00 , H01L21/84 , H01L21/3205
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/1054 , H01L29/66795 , H01L29/78687
摘要： A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.
摘要翻译：形成鳍状场效应晶体管（FinFET）的鳍片的方法包括在第一材料层中限定沟槽，其中沟槽的开口的宽度基本上小于该层的厚度。该方法包括在沟槽中生长第二材料以形成翅片并去除第一材料层。

25. 发明授权

US07112847B1 Smooth fin topology in a FinFET device 有权
标题翻译： FinFET器件中的平滑鳍拓扑
公开(公告)号：US07112847B1
公开(公告)日：2006-09-26
申请号：US10653227
申请日：2003-09-03
申请人： Bin Yu , Haihong Wang
发明人： Bin Yu , Haihong Wang
IPC分类号： H01L27/01
CPC分类号： H01L29/785 , H01L21/823431 , H01L29/42384 , H01L29/4908 , H01L29/66795 , Y10S257/90
摘要： A semiconductor device includes a semiconductor fin formed on an insulator and sidewall spacers formed adjacent the sides of the fin. A gate material layer is formed over the fin and the sidewall spacers and etched to form a gate. The presence of the sidewall spacers causes a topology of the gate material layer to smoothly transition over the fin and the first and second sidewall spacers.
摘要翻译：半导体器件包括形成在绝缘体上的半导体鳍片和邻近翅片侧面形成的侧壁间隔物。栅极材料层形成在鳍片和侧壁间隔物上并被蚀刻以形成栅极。侧壁间隔物的存在导致栅极材料层的拓扑结构平滑地过渡翅片和第一和第二侧壁间隔物。

26. 发明授权

US07041601B1 Method of manufacturing metal gate MOSFET with strained channel 有权
标题翻译：制造具有应变通道的金属栅极MOSFET的方法
公开(公告)号：US07041601B1
公开(公告)日：2006-05-09
申请号：US10653103
申请日：2003-09-03
申请人： Bin Yu , Haihong Wang
发明人： Bin Yu , Haihong Wang
IPC分类号： H01L21/311
CPC分类号： H01L29/7842 , H01L29/4908 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A method of manufacturing a MOSFET type semiconductor device includes forming a fin structure and a dummy gate structure over the fin structure. Sidewall spacers may be formed adjacent the dummy gate structure. The dummy gate structure may be later removed and replaced with a metal layer that is formed at a high temperature (e.g., 600°–700° C.). The cooling of the metal layer induces strain to the fin structure that affects the mobility of the double-gate MOSFET.
摘要翻译：制造MOSFET型半导体器件的方法包括在鳍结构上形成翅片结构和虚拟栅极结构。侧壁间隔件可以与伪栅极结构相邻地形成。可以稍后去除虚拟栅极结构并用在高温（例如600℃-700℃）下形成的金属层代替。金属层的冷却会引起对鳍结构的应变，从而影响双栅极MOSFET的迁移率。

27. 发明申请

US20060089820A1 Event-based system and process for recording and playback of collaborative electronic presentations 有权
公开(公告)号：US20060089820A1
公开(公告)日：2006-04-27
申请号：US10973186
申请日：2004-10-25
申请人： Bin Yu , Yong Rui
发明人： Bin Yu , Yong Rui
IPC分类号： G06F11/30 , G21C17/00 , G06F15/00
CPC分类号： G06Q10/10
摘要： An event-based system and process for recording and playback of collaborative electronic presentations is presented. The present system and process includes a technique for recording collaborative electronic presentations by capturing and storing the interactions between each participant and presentation data where each interaction event is timestamped and linked to a data file comprising the presentation data. The present system and process also includes a technique for playing back the recorded collaborative electronic presentation, which involves displaying the presentation data in an order it was originally presented and reproducing the recorded interactions between each participant and the displayed presentation data at the same point in the presentation that they were originally performed, based on the aforementioned timestamps.

28. 发明授权

US07019363B1 MOS transistor with asymmetrical source/drain extensions 有权
标题翻译：具有不对称源极/漏极延伸的MOS晶体管
公开(公告)号：US07019363B1
公开(公告)日：2006-03-28
申请号：US09476961
申请日：2000-01-03
申请人： Bin Yu
发明人： Bin Yu
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7835 , H01L21/26513 , H01L21/26586 , H01L29/6659 , H01L29/66659
摘要： A method of fabricating an integrated circuit utilizes symmetric source/drain junctions. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETS). The drain extension is deeper than the source extension. The source extension is more conductive than the drain extension. The transistor has reduced short channel effects and strong drive current and yet is reliable.
摘要翻译：一种制造集成电路的方法采用对称的源极/漏极结。该过程可用于P沟道或N沟道金属氧化物半导体效应晶体管（MOSFET）。漏极扩展比源扩展更深。源极延伸比漏极延伸更为导电。晶体管减少了短沟道效应和强大的驱动电流，而且可靠。

29. 发明授权

US06998301B1 Method for forming a tri-gate MOSFET 失效
标题翻译：形成三栅极MOSFET的方法
公开(公告)号：US06998301B1
公开(公告)日：2006-02-14
申请号：US10653225
申请日：2003-09-03
申请人： Bin Yu , Shibly S. Ahmed
发明人： Bin Yu , Shibly S. Ahmed
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/2022 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A method for forming a tri-gate semiconductor device that includes a substrate and a dielectric layer formed on the substrate includes depositing a first dielectric layer on the dielectric layer and etching the first dielectric layer to form a structure. The method further includes depositing a second dielectric layer over the structure, depositing an amorphous silicon layer over the second dielectric layer, etching the amorphous silicon layer to form amorphous silicon spacers, where the amorphous silicon spacers are disposed on opposite sides of the structure, depositing a metal layer on at least an upper surface of each of the amorphous silicon spacers, annealing the metal layer to convert the amorphous silicon spacers to crystalline silicon fin structures, removing a portion of the second dielectric layer, depositing a gate material, and etching the gate material to form three gates.
摘要翻译：一种形成三栅极半导体器件的方法，包括在衬底上形成的衬底和电介质层，包括在电介质层上沉积第一介电层并蚀刻第一介电层以形成结构。该方法还包括在结构上沉积第二介电层，在第二介电层上沉积非晶硅层，蚀刻非晶硅层以形成非晶硅间隔物，其中非晶硅间隔物设置在结构的相对侧上，沉积在每个非晶硅间隔物的至少上表面上的金属层，退火金属层以将非晶硅间隔物转化为晶体硅鳍结构，去除第二电介质层的一部分，沉积栅极材料，并蚀刻门材料形成三门。

30. 发明授权

US06963104B2 Non-volatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US06963104B2
公开(公告)日：2005-11-08
申请号：US10459576
申请日：2003-06-12
申请人： Yider Wu , Bin Yu
发明人： Yider Wu , Bin Yu
IPC分类号： H01L21/336 , H01L21/8246 , H01L27/115 , H01L27/12 , H01L29/786 , H01L29/792 , H01L29/788
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/1203 , H01L29/66833 , H01L29/785 , H01L29/792
摘要： A non-volatile memory device includes a substrate, an insulating layer, a fin, a number of dielectric layers and a control gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The dielectric layers are formed over the fin and the control gate is formed over the dielectric layers. The dielectric layers may include oxide-nitride-oxide layers that function as a charge storage structure for the memory device.
摘要翻译：非易失性存储器件包括衬底，绝缘层，鳍片，多个电介质层和控制栅极。绝缘层形成在基板上，并且鳍形成在绝缘层上。电介质层形成在鳍片之上，并且控制栅极形成在电介质层上。电介质层可以包括用作存储器件的电荷存储结构的氧化物 - 氮化物 - 氧化物层。

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