专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20100180814A1 FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW 失效
标题翻译：具有低WARP和BOW的SIC基板的制造
公开(公告)号：US20100180814A1
公开(公告)日：2010-07-22
申请号：US12664974
申请日：2008-06-26
申请人： Ping Wu , Ilya Zwieback , Avinesh K. Gupta , Edward Semenas
发明人： Ping Wu , Ilya Zwieback , Avinesh K. Gupta , Edward Semenas
IPC分类号： C30B33/02 , C30B23/00
CPC分类号： C30B29/36 , C30B23/002 , C30B23/066 , C30B33/02
摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
摘要翻译：制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在比SiC单晶的稍后生长部分的温度低。一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

22. 发明授权

US08449671B2 Fabrication of SiC substrates with low warp and bow 失效
标题翻译：具有低经向和弓形的SiC衬底的制造
公开(公告)号：US08449671B2
公开(公告)日：2013-05-28
申请号：US12664974
申请日：2008-06-26
申请人： Ping Wu , Ilya Zwieback , Avinesh K. Gupta , Edward Semenas
发明人： Ping Wu , Ilya Zwieback , Avinesh K. Gupta , Edward Semenas
IPC分类号： C30B23/00
CPC分类号： C30B29/36 , C30B23/002 , C30B23/066 , C30B33/02
摘要： A method of fabricating an SiC single crystal includes (a) physical vapor transport (PVT) growing a SiC single crystal on a seed crystal in the presence of a temperature gradient, wherein an early-to-grow portion of the SiC single crystal is at a lower temperature than a later-to-grow portion of the SiC single crystal. Once grown, the SiC single crystal is annealed in the presence of a reverse temperature gradient, wherein the later-to-grow portion of the SiC single crystal is at a lower temperature than the early-to-grow portion of the SiC single crystal.
摘要翻译：制造SiC单晶的方法包括（a）在温度梯度存在下在晶种上生长SiC单晶的物理蒸气转移（PVT），其中SiC单晶的早期生长部分在比SiC单晶的稍后生长部分的温度低。一旦生长，SiC单晶在反向温度梯度的存在下退火，其中SiC单晶的后期生长部分处于比SiC单晶的早期生长部分更低的温度。

23. 发明申请

US20220002906A1 SiC Single Crystal Sublimation Growth Apparatus 有权
公开(公告)号：US20220002906A1
公开(公告)日：2022-01-06
申请号：US17447742
申请日：2021-09-15
申请人： Avinash Gupta , Ilya Zwieback , Edward Semenas , Marcus Getkin , Patrick Flynn
发明人： Avinash Gupta , Ilya Zwieback , Edward Semenas , Marcus Getkin , Patrick Flynn
IPC分类号： C30B29/36 , C30B23/00
摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

24. 发明申请

US20060243984A1 Method of and system for forming SiC crystals having spatially uniform doping impuritites 有权
标题翻译：用于形成具有空间均匀掺杂稀土元素的SiC晶体的方法和系统
公开(公告)号：US20060243984A1
公开(公告)日：2006-11-02
申请号：US11405368
申请日：2006-04-17
申请人： Avinash Gupta , Edward Semenas , Ilya Zwieback , Donovan Barrett , Andrew Souzis
发明人： Avinash Gupta , Edward Semenas , Ilya Zwieback , Donovan Barrett , Andrew Souzis
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , Y10T117/10 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： In a physical vapor transport method and system, a growth chamber charged with source material and a seed crystal in spaced relation is provided. At least one capsule having at least one capillary extending between an interior thereof and an exterior thereof, wherein the interior of the capsule is charged with a dopant, is also provided. Each capsule is installed in the growth chamber. Through a growth reaction carried out in the growth chamber following installation of each capsule therein, a crystal is formed on the seed crystal using the source material, wherein the formed crystal is doped with the dopant.
摘要翻译：在物理蒸气传输方法和系统中，提供了充满源材料的生长室和间隔开的晶种。至少一个胶囊具有在其内部和外部之间延伸的至少一个毛细管，其中胶囊的内部充有掺杂剂。每个胶囊安装在生长室中。通过在每个胶囊安装之后在生长室中进行的生长反应，使用源材料在晶种上形成晶体，其中所形成的晶体掺杂有掺杂剂。

25. 发明授权

US09228274B2 Axial gradient transport growth process and apparatus utilizing resistive heating 有权
标题翻译：轴向梯度输送生长过程和利用电阻加热的装置
公开(公告)号：US09228274B2
公开(公告)日：2016-01-05
申请号：US12632906
申请日：2009-12-08
申请人： Varatharajan Rengarajan , Bryan K. Brouhard , Michael C. Nolan , Ilya Zwieback
发明人： Varatharajan Rengarajan , Bryan K. Brouhard , Michael C. Nolan , Ilya Zwieback
IPC分类号： C30B23/06 , C30B29/36
CPC分类号： C30B23/063 , C23C14/243 , C23C14/26 , C23C14/541 , C30B23/06 , C30B23/066 , C30B29/36
摘要： A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.
摘要翻译：坩埚具有第一电阻加热器，其间隔开地设置在坩埚的顶部之上，第二电阻加热器具有第一电阻部分，第一电阻部分以坩埚底部的间隔设置，并且第二电阻部分间隔设置在坩埚的顶部在坩埚的侧面之外。在坩埚的内部的顶部装载坩埚，坩埚内部的源材料以晶种和坩埚的底部间隔开来。将足够程度的电力施加到第一和第二电阻加热器，以在坩埚内部产生足够温度的温度梯度，以使源材料在晶种上升华和冷凝，从而形成生长晶体。

26. 发明授权

US06388260B1 Solid state neutron detector and method for use 有权
标题翻译：固态中子探测器及其使用方法
公开(公告)号：US06388260B1
公开(公告)日：2002-05-14
申请号：US09519130
申请日：2000-03-06
申请人： F. Patrick Doty , Ilya Zwieback , Warren Ruderman
发明人： F. Patrick Doty , Ilya Zwieback , Warren Ruderman
IPC分类号： G01T306
CPC分类号： G01T3/06
摘要： Crystals of lithium tetraborate or alpha-barium borate had been found to be neutron detecting materials. The crystals are prepared using known crystal growing techniques, wherein the process does not include the common practice of using a fluxing agent, such as sodium oxide or sodium fluoride, to reduce the melting temperature of the crystalline compound. Crystals prepared by this method can be sliced into thin single or polycrystalline wafers, or ground to a powder and prepared as a sintered compact or a print paste, and then configured with appropriate electronic hardware, in order to function as neutron detectors.
摘要翻译：已经发现四硼酸锂或α-硼酸钡的晶体是中子检测材料。使用已知的晶体生长技术制备晶体，其中该方法不包括使用助熔剂如氧化钠或氟化钠的常见做法来降低结晶化合物的熔融温度。通过该方法制备的晶体可以切成薄的单晶或多晶晶片，或者研磨成粉末并制成烧结体或印刷浆料，然后配置适当的电子硬件，以起到中子探测器的作用。

27. 发明授权

US06369392B1 Cerium doped crystals 失效
标题翻译：铈掺杂晶体
公开(公告)号：US06369392B1
公开(公告)日：2002-04-09
申请号：US09480075
申请日：2000-01-10
申请人： Warren Ruderman , Ilya Zwieback , Shai Livneh
发明人： Warren Ruderman , Ilya Zwieback , Shai Livneh
IPC分类号： G01J142
CPC分类号： G02B1/02 , C30B15/00 , C30B29/12 , G01J1/0488 , G01J1/429 , G01J2003/1213
摘要： A crystal having good optical transmission between 260 nm and 280 nm and strongly absorbing at 285 nm and higher, which is nonhydroscopic and stable at temperatures to 250° C. An example of such a crystal is Cerium doped YLiF4. These properties make YLiF4 crystals doped with Ce3+ excellent materials for use as UV filters in the missile early warning spectral band. Optical devices including missile detection systems are also provided.
摘要翻译：在260nm和280nm之间具有良好的光学透射并且在285nm以上强烈吸收的晶体，其在250℃的温度下是非光学的和稳定的。这种晶体的实例是掺杂铈的YLiF4。这些性质使YLiF4晶体掺杂有Ce3 +优良材料，用作导弹预警光谱带中的UV滤光片。还提供了包括导弹检测系统在内的光学装置。

28. 发明申请

US20100139552A1 Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating 有权
标题翻译：轴向梯度运输生长过程和利用电阻加热的装置
公开(公告)号：US20100139552A1
公开(公告)日：2010-06-10
申请号：US12632906
申请日：2009-12-08
申请人： Varatharajan Rengarajan , Bryan K. Brouhard , Michael C. Nolan , Ilya Zwieback
发明人： Varatharajan Rengarajan , Bryan K. Brouhard , Michael C. Nolan , Ilya Zwieback
IPC分类号： C30B23/06
CPC分类号： C30B23/063 , C23C14/243 , C23C14/26 , C23C14/541 , C30B23/06 , C30B23/066 , C30B29/36
摘要： A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.
摘要翻译：坩埚具有第一电阻加热器，其间隔开地设置在坩埚的顶部之上，第二电阻加热器具有第一电阻部分，第一电阻部分以坩埚底部的间隔设置，并且第二电阻部分间隔设置在坩埚的顶部在坩埚的侧面之外。在坩埚的内部的顶部装载坩埚，坩埚内部的源材料以晶种和坩埚的底部间隔开来。将足够程度的电力施加到第一和第二电阻加热器，以在坩埚内部产生足够温度的温度梯度，以使源材料在晶种上升华和冷凝，从而形成生长晶体。

29. 发明申请

US20080072817A1 Silicon carbide single crystals with low boron content 有权
标题翻译：低硼含量的碳化硅单晶
公开(公告)号：US20080072817A1
公开(公告)日：2008-03-27
申请号：US11900242
申请日：2007-09-11
申请人： Ilya Zwieback , Thomas Anderson , Avinash Gupta
发明人： Ilya Zwieback , Thomas Anderson , Avinash Gupta
IPC分类号： C30B29/10 , C30B25/00
CPC分类号： C30B23/00 , C30B29/36
摘要： In a crystal growth method, an enclosed growth crucible is provided inside of a growth chamber. The growth crucible has polycrystalline source material and a seed crystal disposed in spaced relation therein. The interior of the growth crucible is heated whereupon a temperature gradient forms between the source material and the seed crystal. The temperature gradient is sufficient to cause the source material to sublimate and be transported to the seed crystal where it precipitates on the seed crystal. A gas mixture is caused to flow into the growth crucible and between the polycrystalline source material and an interior surface of the growth crucible. The gas mixture reacts with an unwanted element in the body of the growth crucible to form a gaseous byproduct which then flows through the body of the growth crucible to the exterior of the growth crucible.
摘要翻译：在晶体生长方法中，在生长室的内部设置封闭的生长坩埚。生长坩埚具有多晶源材料和间隔开设置的晶种。加热生长坩埚的内部，由此在源材料和晶种之间形成温度梯度。温度梯度足以使源材料升华并被输送到籽晶上，在晶种上沉淀在晶种上。导致气体混合物流入生长坩埚中并且在多晶源材料和生长坩埚的内表面之间。气体混合物与生长坩埚的主体中的不需要的元素反应以形成气态副产物，然后气体副产物通过生长坩埚的主体流到生长坩埚的外部。

30. 发明授权

US06452189B1 Ammonium nickel sulfate crystals 有权
标题翻译：硫酸镍铵晶体
公开(公告)号：US06452189B1
公开(公告)日：2002-09-17
申请号：US09488816
申请日：2000-01-20
申请人： Shai Livneh , Sergey Selin , Ilya Zwieback , Warren Ruderman
发明人： Shai Livneh , Sergey Selin , Ilya Zwieback , Warren Ruderman
IPC分类号： G02B520
CPC分类号： G02B5/208 , C30B7/00 , C30B29/10 , G02B1/02
摘要： Single crystals of (NH4)2Ni(SO4)2.6H2O represent an excellent material for filtering UV light and in an enclosed system will not deteriorate at temperatures as high as 125° C. They are particularly useful in solar-blind optical systems and sensing devices, which seek to identify the presence of UV light sources in the UV missile warning band.
摘要翻译：（NH 4）2 Ni（SO 4）2·6H 2 O的单晶代表用于过滤紫外光的优异材料，并且在封闭的系统中，不会在高达125℃的温度下劣化。它们在太阳能盲光光学系统和感测装置中特别有用，旨在确定紫外线导弹警告带中紫外线光源的存在。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式