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    • 25. 发明授权
    • Nitride semiconductor light emitting element
    • 氮化物半导体发光元件
    • US08004006B2
    • 2011-08-23
    • US12084634
    • 2006-11-07
    • Ken NakaharaAtsushi Yamaguchi
    • Ken NakaharaAtsushi Yamaguchi
    • H01L33/00
    • H01L33/20H01L21/78H01L33/0095H01L33/44
    • Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
    • 提供一种氮化物半导体发光元件,即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽,也不会对发光区域造成损害并具有高亮度而不劣化 通过蚀刻形成芯片分离和激光剥离; 及其制造方法。 当从p侧观察时,n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。 直到该步骤A的位置,保护绝缘膜6覆盖n型氮化物半导体层2,有源层3,p型氮化物半导体层4,p型电极5的一侧以及部分 使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时,当用于 通过蚀刻形成芯片分离或激光剥离。