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21. 发明授权

US07969777B1 Thyristor-based memory array having lines with standby voltages 失效
标题翻译：具有备用电压线路的基于晶闸管的存储器阵列
公开(公告)号：US07969777B1
公开(公告)日：2011-06-28
申请号：US12326027
申请日：2008-12-01
申请人： Hyun-Jin Cho , Farid Nemati
发明人： Hyun-Jin Cho , Farid Nemati
IPC分类号： G11C11/39
CPC分类号： G11C11/39
摘要： A new memory cell can contain only a single thyristor. There is no need to include an access transistor in the cell. In one embodiment, the thyristor is a thin capacitively coupled thyristor. The new memory cell can be connected to word, bit, and control lines in several ways to form different memory arrays. Timing and voltage levels of word, bit and control lines are disclosed.
摘要翻译：新的存储单元只能包含一个晶闸管。不需要在电池中包括存取晶体管。在一个实施例中，晶闸管是薄电容耦合晶闸管。新的存储单元可以以多种方式连接到字，位和控制线，以形成不同的存储器阵列。公开了字，位和控制线的时序和电压电平。

22. 发明授权

US07405963B2 Dynamic data restore in thyristor-based memory device 失效
标题翻译：基于晶闸管的存储器件中的动态数据恢复
公开(公告)号：US07405963B2
公开(公告)日：2008-07-29
申请号：US11361334
申请日：2006-02-24
申请人： Farid Nemati , Hyun-Jin Cho , Robert Homan Igehy
发明人： Farid Nemati , Hyun-Jin Cho , Robert Homan Igehy
IPC分类号： G11C11/00
CPC分类号： G11C11/39
摘要： A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.
摘要翻译：使用动态操作的恢复电路将电压或电流恢复脉冲信号施加到基于晶闸管的存储器单元，并且其中使用晶闸管的内部正反馈回路在单元中恢复数据。在一个示例实现中，晶闸管中的内部正反馈环路用于在晶闸管电流下降到保持电流以下之前恢复器件的导通状态。定义并施加脉冲和/或周期波形以确保晶闸管不从其导通状态释放。晶闸管周期性恢复电流的时间平均值可能低于保持电流阈值。虽然不一定限于基于晶闸管的存储器单元，但是已经发现本发明的各种实施例对于其中使用薄电容耦合晶闸管来提供双向的高速，低功率存储器单元特别有用稳定存储元件

23. 发明授权

US07786505B1 Reduction of charge leakage from a thyristor-based memory cell 失效
标题翻译：减少基于晶闸管的存储单元的电荷泄漏
公开(公告)号：US07786505B1
公开(公告)日：2010-08-31
申请号：US11303237
申请日：2005-12-16
申请人： Kevin J. Yang , Hyun-Jin Cho
发明人： Kevin J. Yang , Hyun-Jin Cho
IPC分类号： H01L29/74
CPC分类号： H01L29/7436 , H01L27/1027 , H01L29/66393
摘要： Formation of a thyristor-based memory cell is described. A first gate dielectric of the storage element is formed over a base region thereof located in a silicon layer. A transistor is coupled to the storage element via a cathode region located in the silicon layer. The transistor has a gate electrode formed over a second gate dielectric. A spacer is formed at least in part along a sidewall of the gate electrode facing a gate electrode of the storage element. A shallow implant region is formed in the silicon layer responsive at least in part to the spacer. The spacer offsets the shallow implant region from the sidewall. A portion of the shallow implant region is for an extension region. The first gate dielectric and the second gate dielectric are formed at least in part by deposition of a dielectric material.
摘要翻译：描述了基于晶闸管的存储单元的形成。存储元件的第一栅极电介质形成在位于硅层中的基极区域上。晶体管经由位于硅层中的阴极区耦合到存储元件。晶体管具有形成在第二栅极电介质上的栅电极。至少部分地沿着栅电极的侧壁与存储元件的栅电极形成间隔物。在硅层中形成浅的注入区域，至少部分地响应于间隔物。间隔件从浅侧植入区域偏离侧壁。浅植入区域的一部分用于延伸区域。至少部分地通过沉积介电材料形成第一栅极电介质和第二栅极电介质。

24. 发明授权

US08261010B2 Methods for distributing log block associativity for real-time system and flash memory devices performing the same 有权
标题翻译：用于分发执行相同功能的实时系统和闪存设备的日志块关联性的方法
公开(公告)号：US08261010B2
公开(公告)日：2012-09-04
申请号：US12356306
申请日：2009-01-20
申请人： Young-Ik Eom , Dong-Kun Shin , Hyun-Jin Cho
发明人： Young-Ik Eom , Dong-Kun Shin , Hyun-Jin Cho
IPC分类号： G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7202 , G06F2212/7203
摘要： A method for distributing log block associativity in log buffer-based flash translation layer (FTL) includes, if write request on page p is generated, checking whether log block associated with corresponding data block that write request is generated exists or not by checking log block mapping table storing mapping information between data blocks and log blocks, wherein the associativity of each log block to data block is set to equal to or less than predetermined value K in advance, and K is a natural number, if log block associated with corresponding data block that write request is generated exists, checking whether associated log block is random log block or sequential log block, and if associated log block is random log block, writing data that write request is generated in first free page of random log block.
摘要翻译：在基于日志缓冲的闪存转换层（FTL）中分配日志块关联性的方法包括：如果生成了第p页上的写请求，则通过检查日志块来检查是否存在与写入请求相关联的数据块相关联的日志块是否存在映射表存储数据块和日志块之间的映射信息，其中每个日志块与数据块的相关性被预先设置为等于或小于预定值K，并且如果与对应数据相关联的日志块，则K是自然数产生写请求的块，检查关联的日志块是随机日志块还是顺序日志块，如果关联的日志块是随机日志块，则写入请求的数据在随机日志块的第一个空闲页中生成。

25. 发明授权

US08246187B2 Display device using diffusive light guide plate 有权
标题翻译：显示装置使用漫射导光板
公开(公告)号：US08246187B2
公开(公告)日：2012-08-21
申请号：US12819592
申请日：2010-06-21
申请人： Byoung-Ho Cheong , Guk-Hyun Kim , Oleg Prudnikov , Seung-Won Park , Hyun-Jin Cho
发明人： Byoung-Ho Cheong , Guk-Hyun Kim , Oleg Prudnikov , Seung-Won Park , Hyun-Jin Cho
IPC分类号： G09F13/04
CPC分类号： G02F1/133603 , G02F1/133611
摘要： A backlight unit includes a light source substrate on which a light source is mounted, a first light source plate which is disposed on the light source substrate and includes a cylindrical aperture corresponding to the light source, and a second light source plate which is disposed on the first light source plate and includes a partial transmission pattern on a bottom surface thereof. The partial transmission pattern corresponds to the aperture and allows part of light emitted from the light source to pass therethrough.
摘要翻译：背光单元包括其上安装有光源的光源基板，设置在光源基板上并包括与光源对应的圆筒孔的第一光源板和设置在光源基板上的第二光源板第一光源板并且在其底表面上包括部分透射图案。部分透射图案对应于孔径，并且允许从光源发射的光的一部分通过。

26. 发明授权

US08048724B2 Semiconductor switching device 有权
标题翻译：半导体开关装置
公开(公告)号：US08048724B2
公开(公告)日：2011-11-01
申请号：US12707519
申请日：2010-02-17
申请人： Hyun-Jin Cho
发明人： Hyun-Jin Cho
IPC分类号： H01L21/332
CPC分类号： G11C13/0004
摘要： A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
摘要翻译：提供了一种开关装置及其制作和操作方法。一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

27. 发明申请

US20080268535A1 Method for Inducing the Differentiation of Human Myelogenous Leukemia Cells Into Megakarocytes or Thrombocytes 审中-公开
标题翻译：诱导人类骨髓性白血病细胞分化为巨细胞或血小板细胞的方法
公开(公告)号：US20080268535A1
公开(公告)日：2008-10-30
申请号：US12093381
申请日：2006-11-17
申请人： Gil-Ja Jhon , So-Yeop Han , Jin-Kyung Limb , Hyun-Jin Cho , Shin-Young Kim
发明人： Gil-Ja Jhon , So-Yeop Han , Jin-Kyung Limb , Hyun-Jin Cho , Shin-Young Kim
IPC分类号： C12N5/08
CPC分类号： C12N5/0644 , C12N2501/999 , C12N2502/1394 , C12N2506/30
摘要： Disclosed herein is a method of inducing the differentiation of leukemia cells derived from human bone marrow into megakaryocytes or thrombocytes, comprising the steps of: (a) culturing OP9 cells; (b) layering leukemia cells derived from human bone marrow over the OP9 cells; and (c) incubating the cells in the presence of a compound ((R)-NALPCE) represented by Chemical Formula 1.
摘要翻译：本文公开了一种诱导人骨髓白血病细胞分化为巨核细胞或血小板细胞的方法，包括以下步骤：（a）培养OP9细胞; （b）在OP9细胞上分层衍生自人骨髓的白血病细胞; 和（c）在由化学式1表示的化合物（（R）-NALPCE）存在下孵育细胞。

28. 发明申请

US20080031036A1 Semiconductor Switching Device 有权
标题翻译：半导体开关器件
公开(公告)号：US20080031036A1
公开(公告)日：2008-02-07
申请号：US11615983
申请日：2006-12-24
申请人： Hyun-Jin Cho
发明人： Hyun-Jin Cho
IPC分类号： G11C11/34
CPC分类号： G11C13/0004
摘要： A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
摘要翻译：提供了一种开关装置及其制作和操作方法。一方面，提供了一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

29. 发明授权

US08633918B2 Method of detecting touch position, touch position detecting apparatus for performing the method and display apparatus having the touch position detecting apparatus 有权
标题翻译：检测触摸位置的方法，用于执行该方法的触摸位置检测装置和具有触摸位置检测装置的显示装置
公开(公告)号：US08633918B2
公开(公告)日：2014-01-21
申请号：US12971251
申请日：2010-12-17
申请人： Jin-Hwan Kim , Hyun-Min Cho , Guk-Hyun Kim , Jong-Hee Kim , Hyun-Jin Cho
发明人： Jin-Hwan Kim , Hyun-Min Cho , Guk-Hyun Kim , Jong-Hee Kim , Hyun-Jin Cho
IPC分类号： G06F3/042
CPC分类号： G06F3/0416 , G06F3/0428
摘要： A light waveguide has a rectangular plate shape and is configured to totally reflect internal light arriving at an angle greater than a critical angle. Light emitting parts are disposed at corners of the light waveguide. Each of the light emitting parts emits light once in a period. A first light receiving part is disposed along a first side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to a second side surface facing the first side surface of the light waveguide. The second light receiving part is disposed along the second side surface of the light waveguide, and receives light emitted from the light emitting parts adjacent to the first side surface. A detecting part detects a touch position based on an amount of the light received by the first and second light receiving parts.
摘要翻译：光波导具有矩形板形状并且被配置为完全反射以大于临界角的角度到达的内部光。发光部件设置在光波导的角部。每个发光部分在一段时间内发光一次。第一光接收部分沿着光波导的第一侧表面设置，并且接收从与光波导的第一侧表面相对的第二侧表面邻近的发光部分发射的光。第二光接收部分沿着光波导的第二侧表面设置，并且接收从与第一侧表面相邻的发光部分发射的光。检测部分基于由第一和第二光接收部分接收的光量来检测触摸位置。

30. 发明授权

US08184477B2 Semiconductor switching device 有权
标题翻译：半导体开关装置
公开(公告)号：US08184477B2
公开(公告)日：2012-05-22
申请号：US13243772
申请日：2011-09-23
申请人： Hyun-Jin Cho
发明人： Hyun-Jin Cho
IPC分类号： G11C11/34
CPC分类号： G11C13/0004
摘要： A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
摘要翻译：提供了一种开关装置及其制作和操作方法。一方面，提供一种操作开关器件的方法，其包括提供具有栅极，源极区域，漏极区域和体区域的MOS晶体管。提供了具有集电极，基极和发射极的双极晶体管。 MOS晶体管的体区用作双极晶体管的基极，MOS晶体管的漏极区域用作双极晶体管的集电极。 MOS晶体管的激活导致双极晶体管导通。 MOS晶体管被激活以导通双极晶体管，并且双极晶体管将电流传送到源极区域。

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