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    • 22. 发明授权
    • Plasma-enhanced substrate processing method and apparatus
    • 等离子体增强的基板处理方法和装置
    • US08262847B2
    • 2012-09-11
    • US11618583
    • 2006-12-29
    • Rajinder DhindsaHudson EricAlexei MarakhtanovAndreas Fischer
    • Rajinder DhindsaHudson EricAlexei MarakhtanovAndreas Fischer
    • C23F1/00H01L21/306C23C16/00
    • H01J37/32165H01J37/32091
    • A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
    • 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。 在等离子体处理期间,衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合,从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率。 第二RF信号的相位偏离第一RF信号的相位小于10%的值。 该方法还包括在将第二RF信号提供给上电极的同时处理衬底。