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21. 发明授权

US5316982A Semiconductor device and method for preparing the same 失效
标题翻译：半导体装置及其制备方法
公开(公告)号：US5316982A
公开(公告)日：1994-05-31
申请号：US889413
申请日：1992-05-28
申请人： Kouji Taniguchi
发明人： Kouji Taniguchi
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L28/40
摘要： A semiconductor device comprising a capacitor having a lower electrode of a Si-containing material, an aluminum oxide film formed on the surface of the lower electrode, a dielectric film of Ta.sub.2 O.sub.5 formed on the aluminum oxide film and an upper electrode provided on the dielectric film.
摘要翻译：一种半导体器件，包括具有含Si材料的下电极的电容器，形成在下电极表面上的氧化铝膜，形成在氧化铝膜上的Ta 2 O 5的电介质膜和设置在电介质膜上的上电极。

22. 发明申请

US20130126795A1 POLYOLEFIN-BASED RESIN COMPOSITION AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译：基于聚烯烃的树脂组合物及其生产方法
公开(公告)号：US20130126795A1
公开(公告)日：2013-05-23
申请号：US13703768
申请日：2011-06-16
申请人： Katsunori Takahashi , Daisuke Mukohata , Kouji Taniguchi , Mitsuru Naruta , Shouji Nozato , Naoyuki Nagatani , Kensuke Tsumura , Kazuhiro Sawa
发明人： Katsunori Takahashi , Daisuke Mukohata , Kouji Taniguchi , Mitsuru Naruta , Shouji Nozato , Naoyuki Nagatani , Kensuke Tsumura , Kazuhiro Sawa
IPC分类号： C08L23/12
CPC分类号： C08L23/12 , C08K3/04 , C08L23/02 , C08L23/10 , C08L53/02 , C08L53/025 , C08L71/02 , C08L71/10
摘要： Provided is a polyolefin-based resin composition capable of obtaining a molded product having a high modulus of elongation and a low coefficient of linear expansion. The polyolefin-based resin composition includes a polyolefin-based resin, flaked graphite, and either one or both of a compound with a six-membered ring structure and a compound with a five-membered ring structure. The flaked graphite is uniformly dispersed in the polyolefin-based resin. Thus, a molded product formed using the polyolefin-based resin composition has excellent mechanical strength such as a high modulus of elongation, a low coefficient of linear expansion, and high dimensional stability, and can be used for various applications such as a material that is suitable for use as the exterior panels of automobiles or a sheet metal replacement material.
摘要翻译：本发明提供一种聚烯烃系树脂组合物，其能够得到伸长率高，线膨胀系数低的成型品。聚烯烃类树脂组合物包括聚烯烃类树脂，片状石墨，以及具有六元环结构的化合物和具有五元环结构的化合物中的任一种或两者。片状石墨均匀分散在聚烯烃类树脂中。因此，使用聚烯烃类树脂组合物形成的成型体，具有优异的机械强度，例如高伸长率，低膨胀系数，高尺寸稳定性，可用于各种用途，例如适合用作汽车的外部面板或钣金替代材料。

23. 发明申请

US20130034709A1 RESIN COMPOSITION, SYNTHETIC RESIN SHEET, SYNTHETIC RESIN MOLDED ARTICLE, AND SYNTHETIC RESIN LAMINATE 审中-公开
标题翻译：树脂组合物，合成树脂片，合成树脂模制品和合成树脂层压板
公开(公告)号：US20130034709A1
公开(公告)日：2013-02-07
申请号：US13636428
申请日：2011-03-18
申请人： Katsunori Takahashi , Nobuhiko Inui , Naoyuki Nagatani , Daisuke Mukohata , Kouji Taniguchi , Mitsuru Naruta
发明人： Katsunori Takahashi , Nobuhiko Inui , Naoyuki Nagatani , Daisuke Mukohata , Kouji Taniguchi , Mitsuru Naruta
IPC分类号： C08K7/00 , B32B7/02 , B32B9/04 , C08L33/10 , C08L23/12 , C08L77/00 , C08L33/20 , B32B5/16 , B32B27/06
CPC分类号： C08K3/04 , C08K2201/016 , Y10T428/2495 , Y10T428/25 , C08L23/10
摘要： The present invention provides a resin composition which can be molded easily and from which can be obtained synthetic resin molded articles superior in mechanical strength such as modulus of tensile elasticity, appearance such as surface smoothness, and dimensional stability. Since the resin composition of the present invention is characterized by containing a synthetic resin and a flaked graphite that is a laminate of graphene sheets the number of which is 150 or less and that has an aspect ratio of 20 or more, it is superior in moldability and synthetic resin molded articles with desired shapes can be produced therefrom by a widely used molding method.
摘要翻译：本发明提供一种容易模塑的树脂组合物，可以获得机械强度如拉伸弹性模量，表面光滑度等外观和尺寸稳定性优异的合成树脂模塑制品。由于本发明的树脂组合物的特征在于含有合成树脂和片状石墨，该片状石墨是数量为150以下且长径比为20以上的石墨烯片的层叠体，成型性优异并且可以通过广泛使用的成型方法从其制造具有所需形状的合成树脂模塑制品。

24. 发明授权

US06716718B2 Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US06716718B2
公开(公告)日：2004-04-06
申请号：US09972147
申请日：2001-10-09
申请人： Hiroyuki Nagatani , Kouji Taniguchi
发明人： Hiroyuki Nagatani , Kouji Taniguchi
IPC分类号： H01L2176
CPC分类号： H01L21/76235
摘要： A trench is formed by performing an anisotropic etching treatment on a silicon substrate with the use of a mask pattern including a pad oxide film, a polysilicon film, and a silicon nitride film formed on the silicon substrate, as a mask. Next, the side surface of the polysilicon film is retreated by etching so that the part of an oxide film formed on the side surface of the polysilicon film may not be hung over the part of an oxide film formed on the side surface of the pad oxide film. Next, an oxide film is formed by performing a thermal oxidation treatment on the inner wall surface of the trench including the exposed side surface of the polysilicon film. This produces a semiconductor device that prevents voids from being formed in a trench isolation structure.
摘要翻译：通过使用包括形成在硅衬底上的衬垫氧化物膜，多晶硅膜和氮化硅膜的掩模图案作为掩模，在硅衬底上进行各向异性蚀刻处理来形成沟槽。接下来，通过蚀刻来回退多晶硅膜的侧表面，使得形成在多晶硅膜的侧表面上的氧化膜的部分不会悬挂在形成在衬垫氧化物的侧表面上的氧化膜的部分上电影。接下来，通过对包括多晶硅膜的暴露侧表面的沟槽的内壁表面进行热氧化处理来形成氧化物膜。这产生了防止在沟槽隔离结构中形成空隙的半导体器件。

25. 发明授权

US5444011A Method for forming a thin film capacitive memory deivce with a high dielectric constant 失效
标题翻译：用于形成具有高介电常数的薄膜电容式存储器的方法
公开(公告)号：US5444011A
公开(公告)日：1995-08-22
申请号：US253296
申请日：1994-06-03
申请人： Kouji Taniguchi
发明人： Kouji Taniguchi
IPC分类号： H01L27/04 , H01L21/02 , H01L21/28 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/43 , H01L29/92 , H01L21/70
CPC分类号： H01L29/43 , H01L27/10808 , H01L28/60 , H01L28/55 , H01L28/84
摘要： A method is disclosed for making a thin film capacitive memory device with a high dielectric constant. A lower electrode of yttrium or hafnium is formed on a semiconductor substrate. A dielectric insulating film is formed on the lower electrode, and the dielectric insulating film is annealed such that at thinner portions the dielectric insulating film, the lower electrode is oxidized more heavily than at thicker portions of the dielectric insulating film. An upper electrode is formed on the dielectric insulating film.
摘要翻译：公开了制造具有高介电常数的薄膜电容式存储器件的方法。在半导体衬底上形成钇或铪的下电极。在下部电极上形成介电绝缘膜，并且在电介质绝缘膜的较薄部分，电介质绝缘膜的下部电极比介电绝缘膜的较厚部分氧化得更为严重。在电介质绝缘膜上形成上电极。

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