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21. 发明授权

US07057204B2 III-V group nitride system semiconductor substrate 有权
标题翻译： III-V族氮化物系半导体衬底
公开(公告)号：US07057204B2
公开(公告)日：2006-06-06
申请号：US10752092
申请日：2004-01-07
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L29/267 , C30B23/02 , C30B25/02 , C30B29/40 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L33/16
摘要： A III–V group nitride system semiconductor substrate has III–V group nitride system single crystal grown on a hetero-substrate. The III–V group nitride system semiconductor substrate has a flat surface and satisfies the relationship of θ>α, where θ [deg ] is given as an average in angles of the substrate surface to low index surfaces closest to the substrate surface measured at a plurality of arbitrary points in plane of the substrate, and a variation range of the measured angles to θ is represented by ±α [deg ].
摘要翻译： III-V族氮化物系半导体衬底具有在异质衬底上生长的III-V族氮化物系单晶。 III-V族氮化物系半导体衬底具有平坦表面，并且满足θ>α的关系，其中θ[deg]被给定为在基底表面与最靠近衬底表面的低折射率表面的平均角度基板的平面中的多个任意点，并且与θ的测量角度的变化范围由±α[deg]表示。

22. 发明授权

US07045808B2 III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method 有权
标题翻译： III-V族氮化物半导体衬底及其生产批次和III-V族氮化物半导体器件及其制造方法
公开(公告)号：US07045808B2
公开(公告)日：2006-05-16
申请号：US10799889
申请日：2004-03-15
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L29/06
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/3245 , H01L29/2003
摘要： A III–V nitride semiconductor substrate comprising a III–V nitride semiconductor single crystal at least in a surface portion thereof, the product of [H] and [D] being 1×1025 or less, wherein [H] represents the concentration of hydrogen atoms (the number of hydrogen atoms per cm3) in a surface portion of the single crystal, and [D] represents a dislocation density (the number of dislocations per cm2) on a single crystal surface.
摘要翻译：至少在其表面部分包含III-V族氮化物半导体单晶的III-V族氮化物半导体衬底，[H]和[D]的乘积为1×10 25或更小，其中[H ]表示单晶表面部分中氢原子的浓度（每cm 3的氢原子数），[D]表示位错密度（每厘米的位错数^{2 ）。}

23. 发明申请

US20080042160A1 Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device 有权
标题翻译： III-V族氮化物基半导体衬底和III-V族氮化物基发光器件
公开(公告)号：US20080042160A1
公开(公告)日：2008-02-21
申请号：US11716918
申请日：2007-03-12
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L31/0264
CPC分类号： C30B29/403 , C30B25/02 , H01L33/0075
摘要： A group III-V nitride-based semiconductor substrate is formed of a group III-V nitride-based semiconductor single crystal containing an n-type impurity. The single crystal has a periodical change in concentration of the n-type impurity in a thickness direction of the substrate. The periodical change has a minimum value in concentration of the n-type impurity not less than 5×1017 cm−3 at an arbitrary point in plane of the substrate.
摘要翻译： III-V族氮化物基半导体衬底由含有n型杂质的III-V族氮化物基半导体单晶形成。单晶在衬底的厚度方向上具有n型杂质浓度的周期性变化。周期性变化在衬底的任意点处具有不小于5×10 17 cm -3的n型杂质的浓度的最小值。

24. 发明申请

US20070212803A1 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer 有权
标题翻译： III-V族氮化物系半导体自立式衬底，制造相同方法和III-V族氮化物系半导体晶片
公开(公告)号：US20070212803A1
公开(公告)日：2007-09-13
申请号：US11790005
申请日：2007-04-23
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L21/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A III-V group nitride system semiconductor self-standing substrate has: a first III-V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a surface of the substrate, and a region with dislocation lines gathered thinly; and a second III-V group nitride system semiconductor crystal layer that is formed up to 10 μm from the surface of the substrate on the first III-V group nitride system semiconductor crystal layer and that has a dislocation density distribution that is substantially uniform.
摘要翻译： III-V族氮化物系半导体自立式衬底具有：第一III-V族氮化物系半导体晶体层，其具有密集聚集的位错线的区域，位错线基本上垂直于衬底的表面聚集，以及具有位错线的区域薄薄地聚集; 以及第二III-V族氮化物系半导体晶体层，其从所述第一III-V族氮化物系半导体晶体层上的所述衬底的表面形成至多10微米，并且具有基本均匀的位错密度分布。

25. 发明申请

US20060270200A1 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof 失效
标题翻译： III族氮化物半导体衬底，III族氮化物半导体器件用衬底及其制造方法
公开(公告)号：US20060270200A1
公开(公告)日：2006-11-30
申请号：US11431106
申请日：2006-05-10
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L21/20
CPC分类号： C30B25/04 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nitride semiconductor crystal layer 3 via the metal film or metal nitride film 2′.
摘要翻译：根据本发明的III族氮化物半导体衬底通过在起始衬底1上形成具有微孔的网状结构的金属膜或金属氮化物膜2'制造，并且通过以下方式生长III族氮化物半导体晶体层3：金属膜或金属氮化物膜2'。

26. 发明申请

US20050048685A1 III-V nitride semiconductor substrate and its production method 有权
标题翻译： III-V族氮化物半导体衬底及其制造方法
公开(公告)号：US20050048685A1
公开(公告)日：2005-03-03
申请号：US10813176
申请日：2004-03-31
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L21/00 , C30B1/00
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while forming a plurality of projections on a crystal growth interface at the initial or intermediate stage of crystal growth; conducting the crystal growth until recesses between the projections are buried, so that the crystal growth interface becomes flat; and continuing the crystal growth to a thickness of 10 μm or more while keeping the crystal growth interface flat.
摘要翻译：通过生长III-V族氮化物半导体晶体，同时形成多个（III）族氮化物半导体晶体，生成在顶表面至深度至少为10μm的表面层中具有基本上均匀的载流子浓度分布的自支撑III-V族氮化物半导体基板在晶体生长的初始阶段或中间阶段的晶体生长界面上的投影; 进行晶体生长，直到埋入突起之间的凹陷，使得晶体生长界面变平坦; 并将晶体生长持续至10μm以上，同时保持晶体生长界面平坦。

27. 发明申请

US20050023544A1 III-V group nitride system semiconductor substrate 有权
标题翻译： III-V族氮化物系半导体衬底
公开(公告)号：US20050023544A1
公开(公告)日：2005-02-03
申请号：US10928482
申请日：2004-08-30
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： C30B25/18 , C30B29/40 , H01L21/20 , H01L29/04 , H01L29/20 , H01L33/00 , H01S5/02 , H01S5/323 , H01L29/00 , H01L21/00 , H01L31/0312
CPC分类号： C30B29/403 , C30B25/18 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L33/0075 , H01S5/0211 , H01S5/3202 , H01S5/32341 , Y10S438/977
摘要： A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.
摘要翻译： III-V族氮化物系半导体衬底是III-V族氮化物系单晶。 III-V族氮化物系半导体衬底具有平坦表面，并且通过在衬底的表面上突出在衬底的平面中的任意点处最接近衬底表面的低折射率表面的法向矢量制成的矢量是会聚在基板的平面内部或外部的特定区域或特定区域。

28. 发明授权

US06270569B1 Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method 失效
标题翻译：氮化物晶体的制备方法，混合物，液相生长法，氮化物晶体，氮化物晶体粉末和气相生长法
公开(公告)号：US06270569B1
公开(公告)日：2001-08-07
申请号：US09096458
申请日：1998-06-11
申请人： Masatomo Shibata , Takashi Furuya
发明人： Masatomo Shibata , Takashi Furuya
IPC分类号： C30B1104
CPC分类号： C30B19/00 , C01B21/0602 , C01B21/0632 , C01B21/0722 , C01P2004/10 , C01P2004/61 , C01P2006/60 , C30B9/00 , C30B15/00 , C30B29/403 , C30B29/406
摘要： A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.
摘要翻译：将III族金属元素加热熔化，将含有氮原子的气体NH 3在低于所得氮化物的熔点的温度下注入到III族金属元素的熔体3中，从而制备氮化物微晶的III族元素与III族金属元素的熔体3中的熔体3具有高润湿性。使用如上所述获得的III族氮化物微晶和III族金属元素溶液的混合物作为液相生长的起始材料或通过从混合物中除去第III族金属材料获得的III族氮化物粉末作为气相生长的原料。此外，将种子晶体或基板晶体浸渍在诸如镓的III族元素的熔体中，包含诸如氨的氮气的气体的气泡间歇地与晶体的表面接触，并且III族元素和允许含氮的气体在晶种或基板晶体的表面上彼此反应，从而允许III族元素的氮化物晶体生长在晶种或基板晶体的表面上。

29. 发明申请

US20080001174A1 III-V group nitride system semiconductor substrate 有权
标题翻译： III-V族氮化物系半导体衬底
公开(公告)号：US20080001174A1
公开(公告)日：2008-01-03
申请号：US11892382
申请日：2007-08-22
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： C30B29/403 , C30B25/18 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L33/0075 , H01S5/0211 , H01S5/3202 , H01S5/32341 , Y10S438/977
摘要： A III-V group nitride system semiconductor substrate is of a III-V group nitride system single crystal. The III-V group nitride system semiconductor substrate has a flat surface, and a vector made by projecting on a surface of the substrate a normal vector of a low index surface closest to the substrate surface at an arbitrary point in a plane of the substrate is converged on a specific point or a specific region inside or outside the plane of the substrate.
摘要翻译： III-V族氮化物系半导体衬底是III-V族氮化物系单晶。 III-V族氮化物系半导体衬底具有平坦表面，并且通过在衬底的表面上突出在衬底的平面中的任意点处最接近衬底表面的低折射率表面的法向矢量制成的矢量是会聚在基板的平面内部或外部的特定区域或特定区域。

30. 发明申请

US20070040219A1 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer 有权
标题翻译： III-V族氮化物系半导体自立式衬底，制造相同方法和III-V族氮化物系半导体晶片
公开(公告)号：US20070040219A1
公开(公告)日：2007-02-22
申请号：US11589771
申请日：2006-10-31
申请人： Masatomo Shibata
发明人： Masatomo Shibata
IPC分类号： H01L27/12
CPC分类号： C30B25/18 , C30B25/02 , C30B29/40 , C30B29/64 , Y10S438/977
摘要： A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or more and 24 degrees or less in the a-axis or m-axis direction from C-face of the substrate.
摘要翻译： III-V族氮化物系半导体自立式衬底由具有六方晶系晶体结构的III-V族氮化物系半导体单晶制成。该基板具有从基板的C面向a轴或m轴方向偏离取向为0.09度以上且24度以下的表面。

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