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21. 发明授权

US07266337B2 Fixing roller, and method of producing the same, fixing device and image forming device 失效
标题翻译：固定辊及其制造方法，定影装置和图像形成装置
公开(公告)号：US07266337B2
公开(公告)日：2007-09-04
申请号：US10499749
申请日：2004-06-18
申请人： Michinori Nakamura , Naruhiko Ito , Kazuaki Teshima , Kazuhiro Murakami , Kazuki Yokokawa , Takeshi Inoue , Naoki Kiyohara , Kazuaki Imaizumi , Yasushi Sawada , Hiroshi Ogawa , Hidekatsu Wada , Tomoaki Chiba
发明人： Michinori Nakamura , Naruhiko Ito , Kazuaki Teshima , Kazuhiro Murakami , Kazuki Yokokawa , Takeshi Inoue , Naoki Kiyohara , Kazuaki Imaizumi , Yasushi Sawada , Hiroshi Ogawa , Hidekatsu Wada , Tomoaki Chiba
IPC分类号： G03G15/20
CPC分类号： G03G15/2053
摘要： A coil spring 60 is provided in an empty room (inside of a fixing roller 50) of a main body 52 of a roller. The coil spring 60 is in contact with an inside wall 52a surrounding the empty room of the roller main body 52 and pushes the inside wall 52a outward. The coil spring 60 and the inside wall face 52a are coated with a black film 66 except the contact portion 62 of the coil spring 60 and the inside wall 52a.
摘要翻译：螺旋弹簧60设置在辊的主体52的空房间（定影辊50内）。螺旋弹簧60与围绕滚筒主体52的空房间的内壁52a接触并将内壁52向外推。螺旋弹簧60和内壁面52a除了螺旋弹簧60的接触部62和内壁52a之外还涂覆有黑色膜66。

22. 发明授权

US06670766B2 Plasma treatment apparatus and plasma treatment method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06670766B2
公开(公告)日：2003-12-30
申请号：US09863474
申请日：2001-05-24
申请人： Keiichi Yamazaki , Yukiko Inooka , Yasushi Sawada , Noriyuki Taguchi , Yoshiyuki Nakazono , Akio Nakano
发明人： Keiichi Yamazaki , Yukiko Inooka , Yasushi Sawada , Noriyuki Taguchi , Yoshiyuki Nakazono , Akio Nakano
IPC分类号： H01J724
CPC分类号： H01J37/32357
摘要： A plasma treatment apparatus and a plasma treatment method having the capability of uniformly treating an object with plasma at a high treatment speed. This apparatus includes a tubular vessel having a laterally elongated cross section, a pair of electrodes arranged such that electric flux lines develop substantially in an axial direction of the tubular vessel when one of an AC voltage and a pulse voltage is applied between the electrodes, a gas supply for supplying a streamer generation gas into the tubular vessel, a power source for applying the voltage between the electrodes to generate plural streamers of the gas in the tubular vessel, and a plasma uniformity mechanism for making the plural streamers uniform in a lateral direction of the laterally elongated cross section of the tubular vessel to provide the plasma from one end of the tubular vessel.
摘要翻译：一种等离子体处理装置和等离子体处理方法，其具有以高处理速度等离子体均匀地处理物体的能力。该装置包括具有横向细长横截面的管状容器，一对电极被布置为使得当在电极之间施加AC电压和脉冲电压之一时，电流线基本上沿管状容器的轴向方向显影，a 用于向管状容器供应流光产生气体的气体供给源，用于在电极之间施加电压的电源，以在管状容器中产生多个气流拖缆;以及等离子体均匀性机构，用于使多个拖缆在横向方向上均匀的管状容器的横向细长的横截面以从管状容器的一端提供等离子体。

23. 发明授权

US06465964B1 Plasma treatment apparatus and plasma generation method using the apparatus 失效
标题翻译：等离子体处理装置和使用该装置的等离子体生成方法
公开(公告)号：US06465964B1
公开(公告)日：2002-10-15
申请号：US09694324
申请日：2000-10-24
申请人： Noriyuki Taguchi , Yasushi Sawada , Keiichi Yamazaki , Yoshiyuki Nakazono , Yukiko Inooka , Kazuya Kitayama
发明人： Noriyuki Taguchi , Yasushi Sawada , Keiichi Yamazaki , Yoshiyuki Nakazono , Yukiko Inooka , Kazuya Kitayama
IPC分类号： H01J724
CPC分类号： H05H1/2406 , H05H2001/2456
摘要： A plasma treatment apparatus can generate atmospheric pressure plasma with reliability by help of an ignition electrode to facilitate starting the apparatus without using an expensive impedance matching device. The apparatus comprises a plasma-generation chamber having an aperture from which the plasma blows out, a gas supply unit for supplying a gas for plasma generation into the chamber, a pair of electrodes, a power source for applying an AC electric field between the electrodes to maintain the plasma in the chamber, a pulse generator for providing a pulse voltage, and the ignition electrode for applying the pulse voltage to the gas supplied in the chamber to generate the plasma.
摘要翻译：等离子体处理装置可以通过点火电极的可靠性产生大气压等离子体，以便于在不使用昂贵的阻抗匹配装置的情况下启动装置。该装置包括具有等离子体吹出的孔的等离子体生成室，用于将用于等离子体产生的气体供应到室中的气体供给单元，一对电极，用于在电极之间施加AC电场的电源以维持腔室中的等离子体，用于提供脉冲电压的脉冲发生器和用于将脉冲电压施加到在腔室中供应的气体以产生等离子体的点火电极。

24. 发明授权

US06424091B1 Plasma treatment apparatus and plasma treatment method performed by use of the same apparatus 失效
标题翻译：使用相同的装置进行等离子体处理装置和等离子体处理方法
公开(公告)号：US06424091B1
公开(公告)日：2002-07-23
申请号：US09421291
申请日：1999-10-20
申请人： Yasushi Sawada , Kosuke Nakamura , Hiroaki Kitamura , Yoshitami Inoue
发明人： Yasushi Sawada , Kosuke Nakamura , Hiroaki Kitamura , Yoshitami Inoue
IPC分类号： H01J724
CPC分类号： H01J37/32009 , H01J37/32348 , H01J37/32541 , H01J37/32559 , H01J37/32724 , H05H1/2406
摘要： A plasma treatment apparatus capable of efficiently performing a plasma treatment to a large area of an object while preventing the occurrence of streamer discharge is provided. The apparatus includes at least one pair of electrodes, gas supply unit for supplying a gas for plasma generation to a discharge space defined between the electrodes, and an electric power supply for applying an AC voltage between the electrodes to generate plasma of the gas for plasma generation in the discharge space. At least one of the pair of electrodes has a dielectric layer at an outer surface thereof. At least one of the pair of electrodes has a curved surface jutting into the discharge space. It is preferred that the electrodes are of a cylindrical structure. In this case, it is particularly preferred that the plasma treatment apparatus further includes a coolant supply unit for supplying a coolant to the interior of the electrodes to reduce an electrode temperature during the plasma treatment.
摘要翻译：提供能够有效地对物体的大面积进行等离子体处理的等离子体处理装置，同时防止流光放电的发生。该装置包括至少一对电极，用于将等离子体产生的气体供应到在电极之间限定的放电空间的气体供给单元和用于在电极之间施加AC电压的电源，以产生等离子体气体的等离子体一代在放电空间。该对电极中的至少一个在其外表面具有介电层。所述一对电极中的至少一个具有突出到放电空间的弯曲表面。电极优选为圆柱形结构。在这种情况下，特别优选的是，等离子体处理装置还包括用于向电极内部供应冷却剂以在等离子体处理期间降低电极温度的冷却剂供应单元。

25. 发明授权

US5527501A Process for producing piezoelectric ceramic sheet and dielectric ceramic sheet 失效
标题翻译：制造压电陶瓷片和电介质陶瓷片的方法
公开(公告)号：US5527501A
公开(公告)日：1996-06-18
申请号：US238333
申请日：1994-05-04
申请人： Yasushi Sawada , Eturo Yasuda , Hiroshi Matuoka , Michihiro Wakimoto , Masahiro Tomita , Yoshinori Nakayama
发明人： Yasushi Sawada , Eturo Yasuda , Hiroshi Matuoka , Michihiro Wakimoto , Masahiro Tomita , Yoshinori Nakayama
IPC分类号： C04B35/491 , C04B35/493 , H01B3/12 , H01L41/24 , F27B9/14
CPC分类号： C04B35/491 , C04B35/493 , H01B3/12 , H01L41/1876 , H01L41/43
摘要： A method for preparing a piezoelectric or dielectric ceramic sheet by firing a shaped body made of a piezoelectric or dielectric ceramic powder while the shaped body is sandwiched between substrates. The method results in a significant improvement in the degree of displacement of a piezoelectric ceramic and significantly decreased warpage of the shaped body during sintering.
摘要翻译：一种压电或电介质陶瓷片的制造方法，其特征在于，在成形体夹在基板之间时，通过点火由压电陶瓷粉末或电介质陶瓷粉末构成的成形体。该方法导致压电陶瓷的位移程度的显着改善，并且在烧结期间显着降低成形体的翘曲。

26. 发明授权

US4845399A Laminated piezoelectric transducer 失效
标题翻译：层压压电换能器
公开(公告)号：US4845399A
公开(公告)日：1989-07-04
申请号：US255997
申请日：1988-10-11
申请人： Eturo Yasuda , Hiroshi Matsuoka , Hiroyuki Yoshida , Yoichi Kotanshi , Yasushi Sawada
发明人： Eturo Yasuda , Hiroshi Matsuoka , Hiroyuki Yoshida , Yoichi Kotanshi , Yasushi Sawada
IPC分类号： B06B1/06 , H01L41/083 , H01L41/113 , H01L41/22 , H02N2/04
CPC分类号： B06B1/0611 , H01L41/0471 , H01L41/0472 , H01L41/0475 , H01L41/0833 , H01L41/29 , H01L41/293 , Y10T29/42
摘要： A laminated piezoelectric transducer, comprising a laminate of a plurality of piezoelectric plates with paste electrodes inserted therebetween and bonding the plates together. Rows of metal extrusions are made by electroless plating onto the paste electrodes on the peripheral outer surface of the laminate. Each row of the metal extrusions is formed onto and electrically connected to alternate paste electrodes, so that by electrically connecting each row of the metal extrusions, the laminate of the piezoelectric plates is electrically connected in parallel. This laminated piezoelectric transducer allows the formation of the paste electrodes on the entire or at least substantially the entire main surfaces of the piezoelectric plates, and eliminates the need for the usual metal plate electrodes inserted between the piezoelectric plates.
摘要翻译：一种层压压电传感器，包括多个压电板的叠层，其中插入有糊电极并将板粘合在一起。金属挤出行通过无电镀在层压板的周边外表面上的糊电极上制成。金属挤压件的每一列都形成在电连接到交替的糊料电极上，从而通过电连接每排金属挤压件，压电板的叠层被并联电连接。该层压压电换能器允许在压电板的整个或至少基本上整个主表面上形成糊状电极，并且不需要插入压电板之间的通常的金属板电极。

27. 发明授权

US4673959A Heterojunction FET with doubly-doped channel 失效
标题翻译：具有双掺杂沟道的异质结FET
公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译：公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。可以使用多量子阱结构作为较高的杂质活化效率半导体层。通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

28. 发明授权

US4605945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译：在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

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