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21. 发明授权

US5516879A Catalytic compositions for the preparation of poly(butylene terephthalate) 失效
标题翻译：用于制备聚对苯二甲酸丁二醇酯的催化组合物
公开(公告)号：US5516879A
公开(公告)日：1996-05-14
申请号：US413025
申请日：1995-03-28
申请人： Wu-Bin Yuo , Wen-Jeng Lin , Hsin-Herng Wang , Jian-Hong Chen
发明人： Wu-Bin Yuo , Wen-Jeng Lin , Hsin-Herng Wang , Jian-Hong Chen
IPC分类号： C08G63/82 , C08G63/02
CPC分类号： C08G63/82
摘要： A catalyst composition for use in the preparation of poly(butylene terephthalate) from dimethyl terephthalate, comprising: (a) a titanium compound primary catalyst, from about 0.01 PHR to about 1 PHR; and (b) an alkali metal phosphate or alkali metal phosphite co-catalyst, from about 0.001 PHR to about 1 PHR; wherein PHR represents parts of the primary catalyst or the co-catalyst per one hundred parts, by weight, of dimethyl terephthalate. Preferred titanium compounds include tetrabutyl titanate or tetra(isopropyl) titanate; the alkali metal phosphate can be a phosphate salt containing one, two, or three metal groups; and the alkali metal phosphite can be a phosphite salt containing one or two metal groups. With this catalyst composition, the transesterification rate was increased by 10 percent or more. Furthermore, the reaction product poly(butylene terephthalate) shows an increased intrinsic viscosity over those without the co-catalyst, indicating a greater degree of polymerization.
摘要翻译：一种用于从对苯二甲酸二甲酯制备聚（对苯二甲酸丁二醇酯）的催化剂组合物，包括：（a）钛化合物一次催化剂，约0.01PHR至约1PHR; 和（b）约0.001PHR至约1PHR的碱金属磷酸盐或碱金属亚磷酸盐助催化剂; 其中PHR代表每100重量份对苯二甲酸二甲酯的主要催化剂或助催化剂的部分。优选的钛化合物包括钛酸四丁酯或钛酸四（异丙基）酯; 碱金属磷酸盐可以是含有一个，两个或三个金属基团的磷酸盐; 碱金属亚磷酸盐可以是含有一个或两个金属基团的亚磷酸盐。使用该催化剂组合物，酯交换率提高10％以上。此外，反应产物聚（对苯二甲酸丁二醇酯）显示出比不含助催化剂的反应产物增加的特性粘度，表明聚合度更高。

22. 发明授权

US07449741B2 SRAM cell structure and manufacturing method thereof 有权
公开(公告)号：US07449741B2
公开(公告)日：2008-11-11
申请号：US11416699
申请日：2006-05-02
申请人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
发明人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
IPC分类号： H01L27/108
CPC分类号： H01L27/1087 , H01L27/11 , Y10S257/903
摘要： A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

23. 发明授权

US07309890B2 SRAM cell structure and manufacturing method thereof 有权
标题翻译： SRAM单元结构及其制造方法
公开(公告)号：US07309890B2
公开(公告)日：2007-12-18
申请号：US11416925
申请日：2006-05-02
申请人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
发明人： Tzung-Han Lee , Kuang-Pi Lee , Wen-Jeng Lin , Rern-Hurng Larn
IPC分类号： H01L31/119
CPC分类号： H01L27/1087 , H01L27/11 , Y10S257/903
摘要： A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.
摘要翻译：至少包括衬底，晶体管，上电极和电容器电介质层的静态随机存取存储器（SRAM）单元结构。在衬底中设置器件隔离结构以限定有源区。活动区域有一个开口。晶体管设置在衬底的有源区上。晶体管的源极区域靠近开口。将上电极设置在开口上方，使得开口完全充满。电容器介电层设置在上电极和衬底之间。

24. 发明申请

US20050156252A1 Method for forming a polycide gate and structure of the same 审中-公开
标题翻译：形成多晶硅栅极的方法及其结构
公开(公告)号：US20050156252A1
公开(公告)日：2005-07-21
申请号：US11011598
申请日：2004-12-15
申请人： Yung-Chang Lin , Le-Tien Jung , Wen-Jeng Lin
发明人： Yung-Chang Lin , Le-Tien Jung , Wen-Jeng Lin
IPC分类号： H01L21/28 , H01L21/3115 , H01L29/49 , H01L29/76 , H01L21/336
CPC分类号： H01L21/31155 , H01L21/28061 , H01L29/4916
摘要： The method of forming a polycide gate includes forming a pad oxide layer on a substrate. A first conductive layer is formed on the pad oxide layer. Subsequently, a first ion implantation into the first conductive layer is next performed to form deep implantation region of polysilicon. Successively, a second ion implantation into the first conductive layer is performed to form shallow implantation region of polysilicon, wherein the second ion type is the same as the first ion type. A second conductive layer formed on the first conductive layer. A further patterned photoresist layer is formed on the second conductive layer. Next, a dry etching process one time by way of using the patterned photoresist layer as an etching mask is performed to etch through in turn the second conductive layer, the first conductive layer and the pad oxide layer until forming a gate with double polysilicon implantation, thereby forming a polycide gate. Finally, the photoresist layer is then removed.
摘要翻译：形成多晶硅栅极的方法包括在衬底上形成衬垫氧化物层。在衬垫氧化物层上形成第一导电层。随后，进行第一离子注入到第一导电层中以形成多晶硅的深注入区。接着，进行到第一导电层的第二离子注入以形成多晶硅的浅注入区，其中第二离子类型与第一离子类型相同。形成在第一导电层上的第二导电层。在第二导电层上形成另外的图案化光致抗蚀剂层。接下来，进行通过使用图案化光致抗蚀剂层作为蚀刻掩模一次的干蚀刻处理，以依次蚀刻第二导电层，第一导电层和衬垫氧化物层，直到形成具有双多晶硅注入的栅极，从而形成多晶硅栅极。最后，去除光致抗蚀剂层。

25. 发明授权

US06689673B1 Method for forming a gate with metal silicide 失效
标题翻译：用金属硅化物形成栅极的方法
公开(公告)号：US06689673B1
公开(公告)日：2004-02-10
申请号：US09572150
申请日：2000-05-17
申请人： Kirk Hsu , Yuang-Chang Lin , Wen-Jeng Lin
发明人： Kirk Hsu , Yuang-Chang Lin , Wen-Jeng Lin
IPC分类号： H01L2176
CPC分类号： H01L21/28052 , H01L21/324 , H01L29/4933 , Y10S438/902
摘要： The proposed invention is related to a method for forming a gate with metal silicide. In short, the proposed method comprises the following steps: providing a substrate; forming a first dielectric layer on the substrate; forming a polysilicon layer on the first dielectric layer; forming a metal silicide layer on the polysilicon layer; forming a second dielectric layer on the metal silicide layer; etching the second dielectric layer, the metal silicide layer, the polysilicon layer and the first dielectric layer to form a gate; performing a thermal nitridation process to form a metal nitride layer on the sidewall of the metal silicide layer; and performing a thermal oxidation process to eliminate edge defects.
摘要翻译：本发明涉及一种用金属硅化物形成栅极的方法。简而言之，所提出的方法包括以下步骤：提供衬底; 在所述基板上形成第一电介质层; 在所述第一电介质层上形成多晶硅层; 在所述多晶硅层上形成金属硅化物层; 在所述金属硅化物层上形成第二电介质层; 蚀刻第二介电层，金属硅化物层，多晶硅层和第一介电层以形成栅极; 进行热氮化处理以在金属硅化物层的侧壁上形成金属氮化物层; 并进行热氧化处理以消除边缘缺陷。

26. 发明授权

US06221767B1 Method of fabricating a silicide landing pad 有权
标题翻译：制造硅化物着陆垫的方法
公开(公告)号：US06221767B1
公开(公告)日：2001-04-24
申请号：US09428735
申请日：1999-10-28
申请人： Kirk Hsu , Yung-Chang Lin , Wen-Jeng Lin
发明人： Kirk Hsu , Yung-Chang Lin , Wen-Jeng Lin
IPC分类号： H01L2144
CPC分类号： H01L21/28518
摘要： A method for fabricating a landing pad is described in which a transistor is formed on the substrate, wherein the transistor comprises a gate and source/drain regions at both sides of the gate in the substrate. A cap layer and a spacer are formed on the gate and at the sidewall of the gate respectively. A protective layer is formed to cover the substrate. The protective layer is then defined to form an opening to expose the source/drain region. A polysilicon landing pad is then formed in the opening and on the protective layer at the periphery of the opening. Silicidation is then conducted on the polysilicon landing pad to form a metal silicide landing pad and to destroy any native oxide at the source/drain region.
摘要翻译：描述了一种用于制造着陆焊盘的方法，其中在衬底上形成晶体管，其中晶体管包括在衬底中的栅极两侧的栅极和源极/漏极区域。在栅极和门的侧壁分别形成覆盖层和间隔物。形成保护层以覆盖基板。然后限定保护层以形成开口以暴露源极/漏极区域。然后在开口处和开口周边处的保护层上形成多晶硅着陆垫。然后在多晶硅着陆焊盘上进行硅化，以形成金属硅化物着陆焊盘并破坏源极/漏极区域处的任何自然氧化物。

27. 发明授权

US5760167A Copolyamide composition with a high glass transition temperature and a low melting point 失效
标题翻译：具有高玻璃化转变温度和低熔点的共聚酰胺组合物
公开(公告)号：US5760167A
公开(公告)日：1998-06-02
申请号：US559347
申请日：1995-11-15
申请人： Wu-Bin Yuo , Chien-Shiun Liao , Wen-Jeng Lin , Li-Kuei Lin , Tien-San Lee , Szu-Yuan Chan
发明人： Wu-Bin Yuo , Chien-Shiun Liao , Wen-Jeng Lin , Li-Kuei Lin , Tien-San Lee , Szu-Yuan Chan
IPC分类号： C08G69/26 , D01F6/80
CPC分类号： D01F6/80 , C08G69/265 , Y10T428/29 , Y10T428/2969 , Y10T428/2971 , Y10T428/31725
摘要： A copolyamide composition prepared from hexamethylene diamine and mixtures of adipic acid, terephthalic acid and isophthalic acid, has a melting point below 300.degree. C., a glass transition temperature between 100.degree. C. and 130.degree. C. and physical properties similar to nylon 66.
摘要翻译：由己二胺和己二酸，对苯二甲酸和间苯二甲酸的混合物制备的共聚酰胺组合物的熔点低于300℃，玻璃化转变温度在100℃至130℃之间，物理性能类似于尼龙66 。

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